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    O220F Price and Stock

    Nextgen Components TO220FMDD7N65F

    MOSFET TO-220F N 650V 7A
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    DigiKey TO220FMDD7N65F Tube 1,000
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    Nextgen Components TO220FMDD4N65F

    MOSFET TO-220F N 650V 4A
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    DigiKey TO220FMDD4N65F Tube 1,000
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    Nextgen Components TO220FMD12N65F

    MOSFET TO-220F N 650V 12A
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    DigiKey TO220FMD12N65F Tube 1,000
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    Nextgen Components TO220FMD10N65F

    MOSFET TO-220F N 650V 10A
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    NIC Components Corp NMC0402NPO220F50TRPF

    Multilayer Ceramic Capacitor, 22 pF, 50 V, ? 1%, C0G (NP0), 0402 [1005 Metric] - Tape and Reel (Alt: 18AH4137)
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    Avnet Americas NMC0402NPO220F50TRPF Reel 19 Weeks, 3 Days 20,000
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    NMC0402NPO220F50TRPF Ammo Pack 19 Weeks, 3 Days 1
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    NMC0402NPO220F50TRPF Reel 14 Weeks 10,000
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    Newark NMC0402NPO220F50TRPF Reel 10,000 20,000
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    NMC0402NPO220F50TRPF Cut Tape 2,835 1
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    Avnet Abacus NMC0402NPO220F50TRPF Reel 15 Weeks 10,000
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    O220F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Schottky barrier diode RB215T-60 Applications Switching power supply Dimensions Unit : mm Structure (1) (2) (3) Features 1)Cathode common type.(TO-220) 2)Low IR 3)High reliability Construcion Silicon epitaxal planar ROHM : O220FN


    Original     		PDF RB215T-60 O-220) O220FN 60Hz/1cyc) 200pF 100pF R1120A

    P55NE

    Abstract: P55NE06 O-220F 0022 morocco p55ne06l p55ne0 p55ne06lfp STP55NE06L STP55NE06LFP stp55ne06
    Text: STP55NE06L STP55NE06LFP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE STP55NE06L STP55NE06LF P • ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.022 Ω < 0.022 Ω 55 A 28 A TYPICAL RDS(on) = 0.018 Ω EXCEPTIONAL dV/dt CAPABILTY


    Original     		PDF STP55NE06L STP55NE06LFP STP55NE06LF P55NE P55NE06 O-220F 0022 morocco p55ne06l p55ne0 p55ne06lfp STP55NE06L STP55NE06LFP stp55ne06

    P20Ne06L

    Abstract: p20ne06lfp STP20NE06LFP P20NE06 STP20NE06L O-220F morocco p20ne06lfp STripFET O220-F mosfet morocco
    Text: STP20NE06L STP20NE06LFP  N - CHANNEL 60V - 0.07 Ω - 20 A - TO-220/TO-220FP STripFET POWER MOSFET PRELIMINARY DATA TYPE STP20NE06L STP20NE06LF P • ■ ■ ■ ■ ■ V DSS R DS on ID 60 V 60 V < 0.085 Ω < 0.085 Ω 20 A 13 A TYPICAL RDS(on) = 0.07 Ω


    Original     		PDF STP20NE06L STP20NE06LFP O-220/TO-220FP STP20NE06LF P20Ne06L p20ne06lfp STP20NE06LFP P20NE06 STP20NE06L O-220F morocco p20ne06lfp STripFET O220-F mosfet morocco

    IRF530

    Abstract: transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530
    Text: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF IRF530 IRF530FI IRF530F 100oC 175oC O-220 O-220FI IRF530 transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530

    BU941ZT

    Abstract: BUB941ZT BU941Z BU941ZTFP
    Text: BU941ZT/BU941ZTFP BUB941ZT  HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON • ■ ■ ■ ■ VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK TO-263 POWER PACKAGE IN TUBE (NO SUFFIX)


    Original     		PDF BU941ZT/BU941ZTFP BUB941ZT O-263) O-220 O-220FP O-263 BU941ZT BUB941ZT BU941Z BU941ZTFP

    RFN20T

    Abstract: No abstract text available
    Text: RFN20TB4S Data Sheet Super Fast Recovery Diode RFN20TB4S zSerise Standard Fast Recovery zDimensions Unit : mm zStructure 㻠㻚㻡㼼㻜㻚㻟 䚷䚷䚷㻌㻜㻚㻝 㻞㻚㻤㼼㻜㻚㻞 䚷䚷䚷㻌㻜㻚㻝 zFeatures 1)Low switching loss 2)High current overload capacity


    Original     		PDF RFN20TB4S RFN20T O220FN R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Schottky barrier diode RB225T-60  Dimensions Unit : mm Applications Switching power supply Structure Features 1) Cathode common type. (TO-220) 2) Low IR 3) High reliability (1) (2) (3) Construction Silicon epitaxial planar


    Original     		PDF RB225T-60 O-220) O220FN 60Hz/1cyc) 200pF 100pF R1120A

    IRF530

    Abstract: IRF530 IRF530FI IRF530F DATA SHEET OF IRF530 IRF530FI equivalent IRF530FI transistor irf530 tr irf530
    Text: IRF530 IRF530FI  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    Original     		PDF IRF530 IRF530FI IRF530F 100oC 175oC O-220 ISOWATT220 IRF530 IRF530 IRF530FI DATA SHEET OF IRF530 IRF530FI equivalent IRF530FI transistor irf530 tr irf530

    p19nb20

    Abstract: P19NB20FP p19nb20 morocco p19nb2 STP19NB20 STP19NB20FP
    Text: STP19NB20 STP19NB20FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET TYPE V DSS R DS on ID STP19NB20 STP19NB20F P 200 V 200 V < 0.180 Ω < 0.180 Ω 19 A 10 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.150 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED


    Original     		PDF STP19NB20 STP19NB20FP STP19NB20F p19nb20 P19NB20FP p19nb20 morocco p19nb2 STP19NB20 STP19NB20FP

    O220F

    Abstract: O-220F O220-F ST13007N ST13007NFP
    Text: ST13007N ST13007NFP  HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS • ■ ■ ■ ■ HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS ■


    Original     		PDF ST13007N ST13007NFP O-220 O-220FP ST13007NF O220F O-220F O220-F ST13007N ST13007NFP

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Super Fast Recovery Diode RFN20TB4S zSerise Standard Fast Recovery zDimensions Unit : mm zStructure 㻠㻚㻡㼼㻜㻚㻟 䚷䚷䚷㻌㻜㻚㻝 㻞㻚㻤㼼㻜㻚㻞 䚷䚷䚷㻌㻜㻚㻝 zFeatures 1)Low switching loss 2)High current overload capacity


    Original     		PDF RFN20TB4S RFN20T O220FN R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Schottky barrier diode RB215T-90 Applications General rectification Common cathode dual chip Dimensions (Unit : mm) Structure (1) (2) (3) Features 1) Small power mold type.(PMDU) 2) Low IR 3) High reliability Construction Silicon epitaxial planar


    Original     		PDF RB215T-90 O220FN 60Hz/1cyc) 200pF 100pF R1120A

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Schottky Barrier Diode RB228T100 lApplications Switching power supply lDimensions Unit : mm 8.0 lFeatures 1)Cathode common type. 2)Low IR 3)High reliability 4)AEC-Q101 qualified lStructure lConstruction Silicon epitaxial planer 13.5MIN 1.2 1.3


    Original     		PDF RB228T100 AEC-Q101 O220FN R1120A

    p9nc60

    Abstract: P9NC O-220F STP9NC60 STP9NC60FP 16L6 O220-F
    Text: STP9NC60 STP9NC60FP  N - CHANNEL 600V - 0.6Ω - 9A TO-220/TO-220FP PowerMESH ΙΙ MOSFET T YPE STP9NC60 STP9NC60FP ν ν ν ν ν V DSS R DS on ID 600 V 600 V < 0.75 Ω < 0.75 Ω 9.0 A 5.2 A TYPICAL RDS(on) = 0.6 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP9NC60 STP9NC60FP O-220/TO-220FP O-220 O-220FP p9nc60 P9NC O-220F STP9NC60 STP9NC60FP 16L6 O220-F

    11N60E

    Abstract: FMV11N60E MS5F7023 fmv11n60 fuji D4701 DIODE marking le st ic MARKING QG MV11 O-220F MV11N60E
    Text: DATE DRAWN Feb.-05-'08 CHECKED Feb.-05-'08 CHECKED Feb.-05-'08 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		PDF FMV11N60E MS5F7023 H04-004-05 H04-004-03 11N60E FMV11N60E MS5F7023 fmv11n60 fuji D4701 DIODE marking le st ic MARKING QG MV11 O-220F MV11N60E

    13N60

    Abstract: 13n60e ic MARKING QG ISO humidifier standards symbols
    Text: DATE DRAWN Feb.-05-'08 CHECKED Feb.-05-'08 CHECKED Feb.-05-'08 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor


    Original     		PDF FMV13N60E MS5F7022 H04-004-05 H04-004-03 13N60 13n60e ic MARKING QG ISO humidifier standards symbols

    gp7nb60hd

    Abstract: smps control ic 393 STGP7NB60HD STGP7NB60HDFP STTA506 INTERNAL CIRCUIT OF IGBT GP7NB60h
    Text: STGP7NB60HD STGP7NB60HDFP  N-CHANNEL 7A - 600V TO-220/FP PowerMESH IGBT TYPE STGP7NB60HD STGP7NB60HDFP • ■ ■ ■ ■ ■ ■ V CES V CE sat IC 600 V 600 V < 2.8 V < 2.8 V 7 A 7 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat)


    Original     		PDF STGP7NB60HD STGP7NB60HDFP O-220/FP gp7nb60hd smps control ic 393 STGP7NB60HD STGP7NB60HDFP STTA506 INTERNAL CIRCUIT OF IGBT GP7NB60h

    C4224

    Abstract: STP60NE06-16 STP60NE06-16FP O220-F
    Text: STP60NE06-16 STP60NE06-16FP N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET TYPE V DSS R DS on ID STP60NE06-16 STP60NE06-16FP 60 V 60 V < 0.016 Ω < 0.016 Ω 60 A 35 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dV/dt CAPABILTY


    Original     		PDF STP60NE06-16 STP60NE06-16FP C4224 STP60NE06-16 STP60NE06-16FP O220-F

    SN278R12

    Abstract: SN278R33 SN278R12PIC SN278 TO-252-5L SN278R33PIC TO252-5L
    Text: SN N278R Rxxxx Low Dropoutt Voltage R Regulator 2 2.0A Series Semiconductor D Descriptio on httpp:// www.auk.co.kr T SN278Rxx is an efficient linear low ddropout voltag The ge regulator for fo v various electro onic equipmennt. It is designed to provide very low droppout


    Original     		PDF N278R SN278Rxx O-252-5L, O-220F-4SL O-252-5 O-220F-4 KSD-I0S010-001 SN278R12 SN278R33 SN278R12PIC SN278 TO-252-5L SN278R33PIC TO252-5L

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Schottky Barrier Diode RB225T-40 Applications Switching power supply Dimensions Unit : mm Structure (1) (2) (3) Features 1)Cathode common type.(TO-220) 2)Low IR 3)High reliability 13.5Min. Construction Silicon epitaxial planer


    Original     		PDF RB225T-40 O-220) O220FN 200pF 100pF R1120A

    p7nb60

    Abstract: STGP3NB60HD STGP3NB60HDFP STTA306 P7NB60hd STGP7NB60HDF
    Text: STGP3NB60HD STGP3NB60HDFP  N-CHANNEL 3A - 600V TO-220/FP PowerMESH IGBT TYPE STGP3NB60HD STGP3NB60HDFP • ■ ■ ■ ■ ■ ■ V CES V CE sat IC 600 V 600 V < 2.8 V < 2.8 V 3 A 3 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat)


    Original     		PDF STGP3NB60HD STGP3NB60HDFP O-220/FP p7nb60 STGP3NB60HD STGP3NB60HDFP STTA306 P7NB60hd STGP7NB60HDF

    O220FP

    Abstract: P16NB25 P16NB2 STP16NB25 STP16NB25FP
    Text: STP16NB25 STP16NB25FP  N - CHANNEL 250V - 0.220Ω - 16A - TO-220/TO-220FP PowerMESH MOSFET TYPE V DSS R DS on ID ST P16NB25 ST P16NB25FP 250 V 250 V < 0.28 Ω < 0.28 Ω 16 A 8 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.220 Ω EXTREMELY HIGH dv/dt CAPABILITY


    Original     		PDF STP16NB25 STP16NB25FP O-220/TO-220FP P16NB25 P16NB25FP O220FP P16NB25 P16NB2 STP16NB25 STP16NB25FP

    Untitled

    Abstract: No abstract text available
    Text: SD DB20 040PH H Schottky Barrier B Rectiffier 40 0V, 20A POWER R SCHOT TTKY RE ECTIFIER Fe eatures  Low L forward d voltage drrop  Low L power loss and Hiigh efficienccy  Low L leakage current  High H surge capability Pin Co onfiguration Pin 1: Cathode


    Original     		PDF 040PH O-220F-2L SDB2040 KSD-D0Q033-002

    gp7nb60hd

    Abstract: GP7NB60h
    Text: STGP7NB60HD STGP7NB60HDFP  N-CHANNEL 7A - 600V - TO-220/FP PowerMESH IGBT TYPE STGP7NB60HD STGP7NB60HDFP • ■ ■ ■ ■ ■ ■ V CES V CE sat IC 600 V 600 V < 2.8 V < 2.8 V 7 A 7 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat)


    Original     		PDF STGP7NB60HD STGP7NB60HDFP O-220/FP gp7nb60hd GP7NB60h