2SC2979
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC2979 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High VCBO ·Fast switching speed. APPLICATIONS ·For high voltage ,high speed and high power switching applications PINNING PIN DESCRIPTION
|
Original
|
PDF
|
2SC2979
O-220C
VCCA250V;
2SC2979
|
Untitled
Abstract: No abstract text available
Text: 2SC2978 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)800 I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC) I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
|
Original
|
PDF
|
2SC2978
|
Untitled
Abstract: No abstract text available
Text: 2SC2977 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)800 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC) I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
|
Original
|
PDF
|
2SC2977
|
2SC2974
Abstract: No abstract text available
Text: 2SC2974 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)300 I(C) Max. (A)70 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC) I(CBO) Max. (A)50u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
|
Original
|
PDF
|
2SC2974
|
2SC2979
Abstract: DSA003644
Text: 2SC2979 Silicon NPN Triple Diffused ADE-208-890 Z 1st. Edition Sep. 2000 Application High voltage, high speed and high power switching Outline TO-220AB 1 1. Base 2. Collector (Flange) 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings
|
Original
|
PDF
|
2SC2979
ADE-208-890
O-220AB
2SC2979
DSA003644
|
2SC2979
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SC2979 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High VCBO ・Fast switching speed. APPLICATIONS ・For high voltage ,high speed and high power switching applications PINNING PIN
|
Original
|
PDF
|
2SC2979
O-220C
VCC250V;
2SC2979
|
Hitachi DSA002787
Abstract: No abstract text available
Text: 2SC2979 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO
|
Original
|
PDF
|
2SC2979
O-220AB
D-85622
Hitachi DSA002787
|
2SC2979
Abstract: Hitachi DSA002755
Text: 2SC2979 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO 900 V Collector to emitter voltage VCEO 800 V Emitter to base voltage
|
Original
|
PDF
|
2SC2979
2SC2979
Hitachi DSA002755
|
2SC2973
Abstract: No abstract text available
Text: 2SC2973 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200 V(BR)CBO (V)300 I(C) Max. (A)40 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC) I(CBO) Max. (A)30u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
|
Original
|
PDF
|
2SC2973
|
2SC2970
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC2970 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High voltage, high speed ·Low saturation voltage APPLICATIONS ·For switching applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter
|
Original
|
PDF
|
2SC2970
2SC2970
|
2SC2975
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SC2975 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High breakdown voltage ·Fast switching speed. APPLICATIONS ·For switching regulator applications ·General purpose power amplifier PINNING See Fig.2
|
Original
|
PDF
|
2SC2975
2SC2975
|
2SC297
Abstract: 2SC2979
Text: 2SC2979 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1 1. Base 2. Collector Flange 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO
|
Original
|
PDF
|
2SC2979
O-220AB
D-85622
2SC297
2SC2979
|
TO66 package
Abstract: 2SC2970
Text: Inchange Semiconductor Product Specification 2SC2970 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High voltage, high speed ·Low saturation voltage APPLICATIONS ·For switching applications PINNING See Fig.2 PIN DESCRIPTION 1 Base 2 Emitter
|
Original
|
PDF
|
2SC2970
TO66 package
2SC2970
|
2SC2975
Abstract: No abstract text available
Text: Inchange Semiconductor Product Specification 2SC2975 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·High breakdown voltage ·Fast switching speed. APPLICATIONS ·For switching regulator applications ·General purpose power amplifier PINNING See Fig.2
|
Original
|
PDF
|
2SC2975
2SC2975
|
|
|
Untitled
Abstract: No abstract text available
Text: 2SC2979 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)800è V(BR)CBO (V)900 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
|
Original
|
PDF
|
2SC2979
|
Untitled
Abstract: No abstract text available
Text: 2SC2979 Silicon NPN Triple Diffused HITACHI Application High voltage, high speed and high power switching Outline T 0 -2 2 0 A B . 1 B a se 2. C o lle c to r F la n g e 3. E m itte r Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to base voltage
|
OCR Scan
|
PDF
|
2SC2979
D-85622
|
2SC4748
Abstract: 2SC5306 K20-K k08 transistor
Text: POWER TRANSISTOR •General switching Package code Ratings Type Ito. DPAK 2SC4499 L /<S) z s e e iis / TO *12« 28C2889 MOO 2SD781 28D975 ' TO-22Ô 2S8566® 2SB566A® AB 2SC2812 2SC2613 2SC2816 e scsim 2SC2979 2SC4913 2SC5273 28047m 2SD476A® 2S)1136
|
OCR Scan
|
PDF
|
2SD864®
2SD970®
2SD991®
2SD1085®
2SD1114«
2S01115®
2SD1126®
k-20k
2SD1127®
2SD1248®
2SC4748
2SC5306
K20-K
k08 transistor
|
Untitled
Abstract: No abstract text available
Text: 2SC2979 Silicon NPN Triple Diffused HITACHI Application High voltage, high speed and high power switching Outline T0 -2 20 A B 1 Base 2 Collector Flange 3 Emitter 1 I 2 3 Absolute Maximum Ratings (T a := 2 5 °C ) Item Symbol Ratings Unit Collector to base voltage
|
OCR Scan
|
PDF
|
2SC2979
|
2sc1979
Abstract: 2SC2979
Text: 2SC2979 SILICON NPN TRIPLE DIFFUSED VOLTAGE, HIGH SPEED AND HIGH POWER HITACH|WIGHITCHING 1. Bn\« 2 . C o lle c te r P i.irt£Ç 3.Emitter ( D i m e n u o n ï in m m ) (JEDEC TO 220AB) M AXIM UM CO LLEC TO R DISSIPATION CURVE • AB S O LU TE M AXIM UM RATINGS (Ta=25°C)
|
OCR Scan
|
PDF
|
2SC2979
O-22QAB)
2SC2979
2sc1979
|
2SC2978
Abstract: 2SC2936 2SC2950 2SA1227 2SC2954 2SC2918 2SC2932 2SC2933 2SC2936H 2SC2941
Text: - 140 - Ta=25?C 1*EP(àTc=25‘1C M 2SC2932 2SC2933 2SC2936 2SC2936H 2SC2941 2SC2944 2SC2946 2SC2946(1) 2SC2949 2SC2950 2SC2951 2SC2952 2SC2953 2SC2954 2SC2958 2SC2959 2SC296Ö 2SC2964 2SC2965 2SC2975 2SC2976 2SC2977 2SC2978 2SC2979 2SC2981 2SC2982 2SC2983
|
OCR Scan
|
PDF
|
2SC2932
2SC2933
2SC2936
2SC2936H
2SC2941
2SC2944
2SC2946
2SC2978
O-220ABB
2SC2978
2SC2950
2SA1227
2SC2954
2SC2918
2SC2932
2SC2933
|
Untitled
Abstract: No abstract text available
Text: 2SC2979 SILICON NPN TRIPLE DIFFUSED H I T A • r î W l l VOLTAGE. HIGH SPEED AND HIGH POWER | W1TCH NG Ì. tlaw ’ Cotteci« il'ianitct Emitter ■I liü'cn-'tom in mini JEDEC TO-220AB) ■ A B SO LUTE M A XIM U M RATINGS CT;p 2 5 X ‘> Item ■Symbol
|
OCR Scan
|
PDF
|
2SC2979
O-220AB)
2SC2979
Ta-25
|
Untitled
Abstract: No abstract text available
Text: 2SC2979 Silicon NPN Triple Diffused HITACHI Application H ig h voltage, h ig h speed and h ig h p o w e r sw itch in g Outline TO -220A B Sì 1. Base 2. Collector Flange 3. Emitter 1 2 3 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to base voltage
|
OCR Scan
|
PDF
|
2SC2979
-220A
|
2SC3365 -TO3
Abstract: 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979
Text: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.
|
OCR Scan
|
PDF
|
GD1377Ã
2SC4692
2SC4744
2SC4745
2SC4746
2SC4747
2SC4796
2SC4797
2SC4877
2SC4878
2SC3365 -TO3
2sc2820
2SB566
2SB566A
2SC2612
2SC2613
2SC2816
2SC2898
2SC2899
2SC2979
|
s 2 umi 1A 250V
Abstract: umi 150 5A 250V umi 5A 250V 2SC2979 1J1ST
Text: Æ&m o s p e c HIGH-VOLTAGE HIGH-SPEED POWER TRANSISTORS . designed for use in high-voltage,high-speed,power switching in inductive circuit,motor control,solenoid and relay drivers. FEATURES: * Collector-Emitter Sustaining VoltageV C E O s u s = 800 V (Min)
|
OCR Scan
|
PDF
|
2SC2979
s 2 umi 1A 250V
umi 150 5A 250V
umi 5A 250V
2SC2979
1J1ST
|
