HZT22
Abstract: ZTK22 DO-35 BLUE CATHODE Hitachi Scans-001
Text: blE J> m 441b205 o o m i o a b77 • HIT4 HITACHI/ OPTOELECTRONICS Appendix O HZT22 0.1 General Description Hitachi monolithic IC HZT22 is specially designed for stabilized power supply of a CATV converter. 0.2 Features • Lower temperature coefficient of reference voltage (compatible to ZTK22, but more stable).
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D014102
HZT22
HZT22
ZTK22,
DO-35
DO-35)
QD141D3
ZTK22
DO-35 BLUE CATHODE
Hitachi Scans-001
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HITACHI LCD h2571
Abstract: h2571
Text: HITACHI/ OPTOELE CTR ONICS 40 blE D • 44^505 0012411 031 « H I T 4 HITACHI 7 ^ /A 3 y H2571 ■ 3 2 character x 1 line ■ INTERNAL PIN CONNECTION Controller LSI H D 4 4 7 8 0 is built-in (See page 115). Pin No. ■ + 5 V single power supply M E C H A N IC A L D A T A (Nom inal dimensions)
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H2571
441b205
GD12421
HITACHI LCD h2571
h2571
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HE8807SG
Abstract: HL7832G HL7832HG HL8312E he8813vg Hitachi Scans-001 LRTBGVTG-U9V5-1 A7A9-5 TT7-6
Text: H IT A C H I/C O P T O E L E C T R O N IC S S l4 E D • G 012D 32 HL7832G/HG bMT « H GaAIAsLD *7 Description The HL7832G/HG are 0.78 pm band GaAlAs laser diodes with a double heterojunction structure, and are appropriate as the light sources for various optical application devices, including optical video disk play
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HL7832G/HG
G012D32
HL7832G/HG
HL7832HG)
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8807SG
HL7832G
HL7832HG
HL8312E
he8813vg
Hitachi Scans-001
LRTBGVTG-U9V5-1 A7A9-5 TT7-6
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HE1301
Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8319E HL8319G Hitachi Scans-001
Text: HITACHI/ OPTOELECTRONICS SHE D • HHTbEGS 0Q1EGÔ3 GGD M H I T 4 GaAiAsLD H L 8 3 1 9 E /G Description The HL8319E/G are high-power 0.8 pm band GaAlAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single negative supply voltage. They are
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HL8319E/G
001EGÃ
HL8319E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE1301
HE8807SG
HE8813VG
HL8312E
HL8319E
HL8319G
Hitachi Scans-001
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2SK1763
Abstract: 44TB2 Hitachi Scans-001
Text: blE ]> • 44TbEG5 ÜQlBSEb fl47 « H I T 4 2SK1763 , 2SK1763 s Silicon N Channel MOS FET HITACHI/(OPTOELECTRONICS) Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device — can be driven from
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44TbEG5
2sk1763
2SK1763
44TB2
Hitachi Scans-001
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CHARACTERISTICS DIODE 1n4732
Abstract: zener diode 1n4744 1n4753 1n4737 zener diode 1N4742 1N4733 zener diode diode 1n4742 TMA 900 1n4747 DIODE 1N4747
Text: b l E D • 44 Tb EG 5 OOmGSfi 7 3 T ■ H U M H ITACHI/ OPTOELECTRONI CS Appendix E 1W Zener Diodes 1N4728 through 1N4753 E .l General Description Hitachi 1W zener diode series 1N4728 through 1N4753 are specially designed for stabilized power supply, clipper, limiter, and surge absorber applications.
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1N4728
1N4753
1N4753
DO-41
1N4752
CHARACTERISTICS DIODE 1n4732
zener diode 1n4744
1n4737
zener diode 1N4742
1N4733 zener diode
diode 1n4742
TMA 900
1n4747
DIODE 1N4747
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HL7836MG
Abstract: HE8807SG HL7836G HL8312E Hitachi Scans-001
Text: HI TA CH I/ O P T O E L E C T R O NI CS 54E ]> • 44^205 0012037 120 « H I T 4 HL7836G/MG GaAIAs LD Description The HL7836G/MG are 0.78 (Jm band GaAIAs laser diodes with a double heterojunction structure. They are designed to be used with a unitary positive voltage power supply, and are appropriate as the light
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HL7836G/MG
HL7836G/MG
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HL7836MG
HE8807SG
HL7836G
HL8312E
Hitachi Scans-001
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hitachi sr 302
Abstract: No abstract text available
Text: HITACHI/ OPTOELECTRONICS 54E HH T b SD S D D 1 2 1 S 3 254 « H I T 4 InGaAsP LD H L 1 5 6 1 A /A C /B F Description The HL1561A/AC/BF are 1.55 (am band InGaAsP X/4 phase-shifted distributed-feedback (DFB) laser diodes with a buried heterostructure. Fiber Specifications (HL1561BF only)
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HL1561A/AC/BF
HL1561BF
HL1561
HL1561BF)
561A/AC/BF)
HL1561A/AC/BF
T-41-07
hitachi sr 302
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HE8807SG
Abstract: HE8815VG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403
Text: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.
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Q012DE7
HL7831G/HG
HL7831G/HG
HL7831HG)
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8807SG
HL7831G
HL7831HG
HL8312E
Hitachi Scans-001
HE8403
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11w cfl circuit
Abstract: HE8807SG HL1521A HL1521AC HL1521FG HL8312E LTH 1550 01 Hitachi Scans-001 44BA
Text: H I T A C H I / O P tOELECTRONICS 5 ME D • 44 Tbi2 D 5 G1 2 1 3 5 23 ^ ■ HITM InGaAsP LD H L 1 5 2 1 A /A C /F G 'T 'H t-c Description The HL1521A/AC/FG are 1.55 (im band laser diodes. Features • • Absolute Maximum Ratings (Tc = 25°C) Long wavelength output: Xp = 1530 - 1570 nm
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0G12135
HL1521A/AC/FG
HL1521A/AC/FG
HL1521FG)
HL1521FG
HL1521FG
HL1521
HE8815VG
HE8813VG
11w cfl circuit
HE8807SG
HL1521A
HL1521AC
HL8312E
LTH 1550 01
Hitachi Scans-001
44BA
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hitachi he1301
Abstract: HL7838G HL8312E laser GaAIAs de 5 mw 760 800 HE8807SG HE8813VG HE8815VG HL7838 Hitachi Scans-001 HE8403
Text: HITACHI/ OPTOELECTRONICS S^E D • MM'JbSGS D0120142 S^fl « H I T 4 HL7838G GaAlAs LD Description The HL7838G is a 0.78 pm band GaAlAs laser diode with a double heterojunction structure and is appro priate as the light source for various optical application devices, including laser beam printers and laser
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HL7838G
D0120L42
HL7838G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
hitachi he1301
HL8312E
laser GaAIAs de 5 mw 760 800
HE8807SG
HE8813VG
HL7838
Hitachi Scans-001
HE8403
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Thermistor bth 471
Abstract: d 1548 10G 1550 optical laser in butterfly HL1541DL HL1541A HL1541BF HL1541DM HL1541FG 10 gb laser diode AP-93
Text: HITACHI/ OPTOELECTRONICS S4E D • 4 4 ^ 2 0 3 D012140 HL1541A/AC/FG/BF/DL/DM bTh M H IT H InGaAsP LD Description The HL1541 A/AC/FG/BF/DL/DM are 1.55 |im band laser diodes. A b s o lu te M a x im u m R a tin g s (T ç ; = 2 5 ° C ) F e a tu re s • The HL1541A/AC are packaged in chip carrier
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D01S14S
HL1541A/AC/FG/BF/DL/DM
D012140
HL1541
HL1541A/AC
HL1541FG
HL1541BF
HL1541DL
HE8815VG
HE8813VG
Thermistor bth 471
d 1548
10G 1550 optical laser in butterfly
HL1541A
HL1541DM
10 gb laser diode
AP-93
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hitachi sr 302
Abstract: HL1561BF te 1819 HL1561A HL1561AC 10 gb laser diode DD121S3 Hitachi Scans-001
Text: 54 E J> HITACHI/ OPTOELECTRONICS • HHTbSDS DD121S3 254 « H I T 4 H L 1 5 6 1 A /A C /B F InGaAsP LD Description The HL1561 A/AC/BF are 1.55 (am band InGaAsP X/4 phase-shifted distributed-feedback (DFB) laser diodes with a buried heterostructure. Fiber Specifications (HL1561BF only)
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HL1561A/AC/BF
DD121S3
HL1561A/AC/BF
HL1561BF
HL1561
HL1561BF)
561A/AC/BF)
HE8815VG
HE8813VG
HE8815VG
hitachi sr 302
te 1819
HL1561A
HL1561AC
10 gb laser diode
Hitachi Scans-001
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T9040
Abstract: HE8807SG HE8813VG HE8815VG HL8312E HL8318E HL8318G Hitachi Scans-001
Text: HITACHI/ OPTOELECTRONICS SHE D • 44ibaGS 001207^ bñT « H I T 4 HL8318E/G GaAIAs LD (-os Description The HL8318E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. Their internal circuit configuration is suited for operation on a single positive supply voltage. They are
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HL8318E/G
441bEG5
HL8318E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
T9040
HE8807SG
HE8813VG
HL8312E
HL8318E
HL8318G
Hitachi Scans-001
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Untitled
Abstract: No abstract text available
Text: HITACHI/ OPTOEL ECT RONICS 5ME » • MMTbEQS OGIEGIS SbT « H I T 4 HL7802E/G GaAIAs LD Description The HL7802E/G are 0.78 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for laser printers, laser levelers and various other types of optical equipment.
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HL7802E/G
HL7802E/G
ib20S
T-41-05
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HL8312E
Abstract: 44FC I00C HE8807SG HE8811 HE8812SG HE8813VG HE8815VG HL7841MG HE7601
Text: HITACHI/ OPTOELECTRONICS SME T> 44^fc.20S G 0 1 2 0 4 7 07T • HL7841MG (Preliminary) GaAIAs LD 7 Description The HL7841MG is a 0.78 (im band GaAIAs laser diode with a multi-quantum well (MQW) structure. It is especially suitable as a light source for laser beam printers with its low threshold current and low slope
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HL7841MG
G012047
HL7841MG
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HL8312E
44FC
I00C
HE8807SG
HE8811
HE8812SG
HE8813VG
HE7601
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HL7802E
Abstract: HE8807SG HE8813VG HE8815VG HL7802G HL8312E Hitachi Scans-001 he8813 HE8403 T9040
Text: HITACHI/ OPTOEL ECT RONICS 5ME » • MMTbEQS OGIEGIS SbT « H I T 4 HL7802E/G GaAIAs LD Description The HL7802E/G are 0.78 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for laser printers, laser levelers and various other types of optical equipment.
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HL7802E/G
HL7802E/G
HE8815VG
HE8813VG
HE8815VG
TjSPo100Â
HE8811,
HE8812SG,
HE8404SG,
HE7601SG
HL7802E
HE8807SG
HE8813VG
HL7802G
HL8312E
Hitachi Scans-001
he8813
HE8403
T9040
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2SK619
Abstract: J10V diode gate
Text: 2SK 619 blE D 44TbE0S 0013103 bib • HITH HITACHI/ OPTOELECTRONICS SILICON N-CHANNEL MOS FET it rT HIGH FREQUENCY HIGH IMPEDANCE AMPLIFIER ì h ■ FEATURES • • High Voltage (VDSS - 70 V) Effective to Suppress Signal Radiation Connected Source to Heat Sink
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2SK619
44TbE0S
Q0131
441b205
DQ131GS
2SK619
J10V
diode gate
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