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    Untitled

    Abstract: No abstract text available
    Text: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description 7 The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.


    OCR Scan     		PDF Q012DE7 HL7831G/HG HL7831G/HG HL7831HG) voltL7831G) 44Tb2QS HL7831G)

    HE8807SG

    Abstract: HE8815VG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403
    Text: HITACHI/ OPTOELECTRONICS 54E J> 44^fc.5GS Q012DE7 261 HL7831G/HG GaAIAs LD Description The HL7831G/HG are 0.78 fun band GaAIAs laser diodes with a double heterojunction structure. MOCVD technology is employed for precise device analysis and optimization to realize low noise.


    OCR Scan     		PDF Q012DE7 HL7831G/HG HL7831G/HG HL7831HG) HE8815VG HE8813VG HE8815VG TjSPo100Â HE8811, HE8812SG, HE8807SG HL7831G HL7831HG HL8312E Hitachi Scans-001 HE8403