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    4405 MOSFET Search Results

    4405 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    4405 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ABO-20 L

    Abstract: cccv charger MAX8845YETC max8845
    Text: 19-4405; Rev 0; 3/09 28V Linear Li+ Battery Chargers with Battery Detection and Overvoltage Protected Output The MAX8845Z/MAX8845Y are intelligent, stand-alone constant-current, constant-voltage CCCV , thermally regulated linear chargers designed for charging a single-cell lithium-ion (Li+) battery. The MAX8845Z/


    Original     		PDF MAX8845Z/MAX8845Y MAX8845Z/ MAX8845Y MO220 ABO-20 L cccv charger MAX8845YETC max8845

    MAX8845

    Abstract: 4.7k Preset MAX8845YETC GMK107BJ105KA GRM188R61A225KE34 dmm3 digital Ammeter circuit digital AC Ammeter ABI Electronics MAX8845ZEVKIT
    Text: 19-4405; Rev 0; 12/08 MAX8845Z Evaluation Kit Features The MAX8845Z evaluation kit EV kit is a fully assembled and tested PCB for evaluating the MAX8845Z/ MAX8845Y 28V linear Li+ battery chargers. The MAX8845Z EV kit features an overvoltage-protected LDO output (SAFEOUT) for low-voltage-rated USB


    Original     		PDF MAX8845Z MAX8845Z/ MAX8845Y MAX8845Z/MAX8845Y MAX8845 4.7k Preset MAX8845YETC GMK107BJ105KA GRM188R61A225KE34 dmm3 digital Ammeter circuit digital AC Ammeter ABI Electronics MAX8845ZEVKIT

    4405 mosfet

    Abstract: mosfet 4405 a6529 4405 n channel mosfet
    Text: SPICE Device Model Si7798DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7798DP S-82025-Rev. 01-Sep-08 4405 mosfet mosfet 4405 a6529 4405 n channel mosfet

    S-82025

    Abstract: si7798 64055
    Text: SPICE Device Model Si7798DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7798DP 18-Jul-08 S-82025 si7798 64055

    Si4126DY

    Abstract: S-81748 mosfet 4405
    Text: SPICE Device Model Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4126DY 18-Jul-08 S-81748 mosfet 4405

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4126DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4126DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si4126DY

    Abstract: No abstract text available
    Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)


    Original     		PDF Si4126DY Si4126DY-T1-GE3 08-Apr-05

    MOSFET 4407

    Abstract: IFR410 4406 mosfet IFU410 IFR-410 MOSFET 4407 a 4404 mosfet IRFU410 4407 mosfet ADVANCED LINEAR DEVICES 4407
    Text: IRFR410, IRFU410 Data Sheet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode


    Original     		PDF IRFR410, IRFU410 TA17445. MOSFET 4407 IFR410 4406 mosfet IFU410 IFR-410 MOSFET 4407 a 4404 mosfet IRFU410 4407 mosfet ADVANCED LINEAR DEVICES 4407

    Si4126DY

    Abstract: No abstract text available
    Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)


    Original     		PDF Si4126DY Si4126DY-T1-GE3 18-Jul-08

    si4126

    Abstract: Si4126DY 265b S8089
    Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)


    Original     		PDF Si4126DY Si4126DY-T1-GE3 11-Mar-11 si4126 265b S8089

    Untitled

    Abstract: No abstract text available
    Text: FDMC8010 N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC8010

    4405 mosfet

    Abstract: No abstract text available
    Text: FDMC8010 N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC8010 FDMC8010 4405 mosfet

    Untitled

    Abstract: No abstract text available
    Text: FDMC8010 N-Channel PowerTrench MOSFET 30 V, 75 A, 1.3 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This


    Original     		PDF FDMC8010

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)


    Original     		PDF Si4126DY Si4126DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)


    Original     		PDF Si4126DY Si4126DY-T1-GE3 150electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)


    Original     		PDF Si4126DY Si4126DY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: BUK764R0-40E N-channel TrenchMOS standard level FET 6 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		PDF BUK764R0-40E OT404

    ic str wg 252

    Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
    Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


    Original     		PDF

    HV9961

    Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
    Text: Supertex inc. Short Form Catalog 2011 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


    Original     		PDF product25 HV9961 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509

    STR 6656

    Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
    Text: Supertex inc. Short Form Catalog 2009 High Voltage, Mixed Signal Integrated Circuits and MOSFETs 1235 Bordeaux Drive - Sunnyvale - CA - 94089 - USA Telephone: 408 222-8888 Fax: (408)222-4800 or (408)222-4895 For the latest in product and dataheet information,


    Original     		PDF

    nxp marking d1

    Abstract: No abstract text available
    Text: BUK764R0-40E N-channel TrenchMOS standard level FET 13 July 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a SOT404 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high


    Original     		PDF BUK764R0-40E OT404 nxp marking d1

    Untitled

    Abstract: No abstract text available
    Text: IRFR410, IRFU410 S e m iconductor D ata S h eet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF IRFR410, IRFU410 000i2

    Untitled

    Abstract: No abstract text available
    Text: • 4302271 0054110 3^fl ■ HAS IRFD220/221/222/223 IRFD220R/221R/222R/223R 2 HARRIS N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features 4-P IN DIP • 0.7 A and 0.8A , 150V - 2 0 0V TOP VIEW • ro s o n ) = 0 .8 fl and 1.2f2 • Single Pulse A valanche Energy R ated*


    OCR Scan     		PDF IRFD220/221/222/223 IRFD220R/221R/222R/223R s4-406 OOS4114 IRFD220, RFD222, IRFD223 RFD220R. IRFD221R, IRFD222R,

    diode 222r

    Abstract: MOSFET 4407 a circuit 4407
    Text: 2 HARRIS IR FD 220/221/222/223 IRFD220R/221R/222R/223R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package F e a tu re s 4-P IN DIP • 0.7 A and 0.8A , 1 5 0V - 2 0 0V TOP VIEW • rDS(on = 0 .8 H and 1 .2 Ct • Single Pulse Avalanche Energy R ated*


    OCR Scan     		PDF IRFD220R/221R/222R/223R diode 222r MOSFET 4407 a circuit 4407