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    4405 mosfet

    Abstract: mosfet 4405 a6529 4405 n channel mosfet
    Text: SPICE Device Model Si7798DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7798DP S-82025-Rev. 01-Sep-08 4405 mosfet mosfet 4405 a6529 4405 n channel mosfet

    circuit 4466

    Abstract: AN609
    Text: Si7798DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7798DP AN609 11-Apr-08 circuit 4466

    S-82025

    Abstract: si7798 64055
    Text: SPICE Device Model Si7798DP Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si7798DP 18-Jul-08 S-82025 si7798 64055