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    IRFU410 Price and Stock

    Infineon Technologies AG IRFU4105

    MOSFET N-CH 55V 27A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFU4105 Tube 75
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    • 100 $2.24653
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    Infineon Technologies AG IRFU4105Z

    MOSFET N-CH 55V 30A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFU4105Z Tube 75
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    • 100 $1.13653
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    Infineon Technologies AG AUIRFU4104

    MOSFET N-CH 40V 42A IPAK
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    DigiKey AUIRFU4104 Tube
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    Rochester Electronics LLC AUIRFU4104

    MOSFET N-CH 40V 42A TO251-3-21
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AUIRFU4104 Bulk 359
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    • 1000 $0.84
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    Vishay Siliconix IRFU4105ZTR

    MOSFET N-CH 55V 30A TO251AA
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    DigiKey IRFU4105ZTR Reel
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    Find more IRFU410 price and stock on Findchips.com

    IRFU410 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFU410 Fairchild Semiconductor 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFET Original PDF
    IRFU410 Intersil 1.5A, 500V, 7.000 ?, N-Channel Power MOSFETs Original PDF
    IRFU410 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFU4104 International Rectifier HEXFET Power MOSFET Original PDF
    IRFU4104 International Rectifier 40V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU4104 with Standard Packaging Original PDF
    IRFU4104-701PBF International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 42A IPAK Original PDF
    IRFU4104PBF International Rectifier 40V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU4104 with Lead Free Packaging Original PDF
    IRFU4104PBF International Rectifier Original PDF
    IRFU4105 International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU4105 with Standard Packaging Original PDF
    IRFU4105 International Rectifier HEXFET Power Mosfet Original PDF
    IRFU4105 International Rectifier HEXFET Power MOSFET Original PDF
    IRFU4105 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFU4105 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFETs Scan PDF
    IRFU4105 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFU4105PBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU4105 with Lead Free Packaging Original PDF
    IRFU4105PBF International Rectifier Original PDF
    IRFU4105Z International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU4105Z with Standard Packaging Original PDF
    IRFU4105Z International Rectifier HEXFET Power MOSFET Original PDF
    IRFU4105ZPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU4105Z with Lead Free Packaging Original PDF
    IRFU4105ZPBF International Rectifier Original PDF

    IRFU410 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 95374B IRFR4105ZPbF IRFU4105ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 24.5mΩ


    Original     		PDF 95374B IRFR4105ZPbF IRFU4105ZPbF AN-994

    IFR-410

    Abstract: IFU410 IFR410 irfu410
    Text: IRFR410, IRFU410 S E M I C O N D U C T O R 1.5A, 500V, 7.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.5A, 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF IRFR410, IRFU410 TA17445. IFR-410 IFU410 IFR410 irfu410

    Untitled

    Abstract: No abstract text available
    Text: IRFU410 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)1.5# I(DM) Max. (A) Pulsed I(D)1.2# @Temp (øC)100 IDM Max (@25øC Amb)3.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)42# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFU410

    Untitled

    Abstract: No abstract text available
    Text: IRFR4104 IRFU4104 D VDSS = 40V Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS on = 5.5mΩ G ID = 42A S Description Specifically designed for Automotive applications, thi


    Original     		PDF IRFR4104 IRFU4104 AN-994

    irf power mosfet

    Abstract: IRF (10A) 55V AN-994 IRFR4105 IRFU120 IRFU4105 IRFZ34N R120 U120 IRFZ3
    Text: PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D VDSS = 55V RDS(on) = 0.045Ω G Fifth Generation HEXFETs from International Rectifier


    Original     		PDF 5550A IRFR4105PbF IRFU4105PbF IRFR4105) IRFU4105) EIA-481 EIA-541. EIA-481. irf power mosfet IRF (10A) 55V AN-994 IRFR4105 IRFU120 IRFU4105 IRFZ34N R120 U120 IRFZ3

    Untitled

    Abstract: No abstract text available
    Text: PD - 95550 IRFR/U4105PbF Ultra Low On-Resistance l Surface Mount IRFR4105 l Straight Lead (IRFU4105) l Fast Switching l Fully Avalanche Rated l Lead-Free Description HEXFET Power MOSFET l D RDS(on) = 0.045Ω G ID = 27A… S Fifth Generation HEXFETs from International Rectifier


    Original     		PDF IRFR/U4105PbF IRFR4105) IRFU4105) O-252AA) EIA-481 EIA-541. EIA-481.

    IRFR410B

    Abstract: IRFU410B
    Text: IRFR410B / IRFU410B 520V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF IRFR410B IRFU410B IRFU410B

    Untitled

    Abstract: No abstract text available
    Text: PD - 95374B IRFR4105ZPbF IRFU4105ZPbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 24.5mΩ


    Original     		PDF 95374B IRFR4105ZPbF IRFU4105ZPbF IRFU4105ZPbFr AN-994

    AN-994

    Abstract: IRFR120 IRFR4105 IRFU120 IRFU4105
    Text: PRELIMINARY DATASHEET PD - 9.1302 IRFR\U4105 HEXFET Power MOSFET ● ● ● ● ● VDSS = 55V Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) 150°C Operating Temperature Fast Switching RDS(on) = 0.045Ω ID = 25A➄ Description


    Original     		PDF IRFR\U4105 IRFR4105) IRFU4105) AN-994 IRFR120 IRFR4105 IRFU120 IRFU4105

    Untitled

    Abstract: No abstract text available
    Text: IRFU4105 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)55 V(BR)GSS (V)20 I(D) Max. (A)25# I(DM) Max. (A) Pulsed I(D)16 @Temp (øC)100# IDM Max (@25øC Amb)100 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)46# Minimum Operating Temp (øC)-55


    Original     		PDF IRFU4105

    AN-994

    Abstract: EIA-541 IRFR4105Z IRFU120 IRFU4105Z R120
    Text: PD - 95374A IRFR4105ZPbF IRFU4105ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V


    Original     		PDF 5374A IRFR4105ZPbF IRFU4105ZPbF AN-994 AN-994 EIA-541 IRFR4105Z IRFU120 IRFU4105Z R120

    irfu410a

    Abstract: No abstract text available
    Text: IRFU410A Advanced Power MOSFET IRFU410A BVDSS = 520 V RDS on = 10.0 Ω ID = 1.2 A Improved Inductive Ruggedness Rugged Polysilicon Gate Cell Structure Fast Switching Times Lower Input Capacitance Improved Gate Charge TO-220 Extended Safe Operating Area Improved High Temperature Reliability


    Original     		PDF IRFU410A O-220 irfu410a

    IRFR4104

    Abstract: IRFU4104
    Text: PD - 94728 IRFR4104 IRFU4104 AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 40V RDS on = 5.5mΩ


    Original     		PDF IRFR4104 IRFU4104 AN-994 IRFR4104 IRFU4104

    diode MARKING CODE 18A

    Abstract: IRFR4105Z IRFU4105Z b965
    Text: PD - 94752 IRFR4105Z IRFU4105Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax D VDSS = 55V RDS on = 24.5mΩ


    Original     		PDF IRFR4105Z IRFU4105Z AN-994 diode MARKING CODE 18A IRFR4105Z IRFU4105Z b965

    IRFR4105Z

    Abstract: IRFU4105Z 10E-06
    Text: PD - 95374A IRFR4105ZPbF IRFU4105ZPbF AUTOMOTIVE MOSFET HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V


    Original     		PDF 5374A IRFR4105ZPbF IRFU4105ZPbF AN-994 IRFR4105Z IRFU4105Z 10E-06

    NTA-100

    Abstract: AN-994 IRFR4105 IRFU4105 IRFZ34N
    Text: PD - 91302C IRFR/U4105 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.045Ω G Description The D-PAK is designed for surface mounting using


    Original     		PDF 91302C IRFR/U4105 IRFR4105) IRFU4105) O-252AA NTA-100 AN-994 IRFR4105 IRFU4105 IRFZ34N

    AN-994

    Abstract: IRFR120 IRFR4105 IRFU120 IRFU4105 U4105
    Text: Previous Datasheet Index Next Data Sheet PRELIMINARY DATASHEET PD - 9.1302 IRFR\U4105 HEXFET Power MOSFET ● ● ● ● ● VDSS = 55V Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) 150°C Operating Temperature Fast Switching


    Original     		PDF IRFR\U4105 IRFR4105) IRFU4105) AN-994 IRFR120 IRFR4105 IRFU120 IRFU4105 U4105

    irfz34n equivalent

    Abstract: AN-994 IRFR4105 IRFU4105 IRFZ34N
    Text: PD - 91302C IRFR/U4105 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.045Ω G Description The D-PAK is designed for surface mounting using


    Original     		PDF 91302C IRFR/U4105 IRFR4105) IRFU4105) irfz34n equivalent AN-994 IRFR4105 IRFU4105 IRFZ34N

    AN-1005

    Abstract: No abstract text available
    Text: PD - 95425B IRFR4104PbF IRFU4104PbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 40V RDS on = 5.5mΩ


    Original     		PDF 95425B IRFR4104PbF IRFU4104PbF AN-994 AN-1005

    IFR410

    Abstract: IFU410 IRFU410 IFR-410 IRFR410 TB334
    Text: IRFR410, IRFU410 Data Sheet July 1999 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs Features These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    Original     		PDF IRFR410, IRFU410 TA17445. IFR410 IFU410 IRFU410 IFR-410 IRFR410 TB334

    AN-994

    Abstract: IRFR4105 IRFU4105 IRFZ34N mosfet IRFZ34N
    Text: PD - 91302C IRFR/U4105 HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.045Ω G Description The D-PAK is designed for surface mounting using


    Original     		PDF 91302C IRFR/U4105 IRFR4105) IRFU4105) AN-994 IRFR4105 IRFU4105 IRFZ34N mosfet IRFZ34N

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1302A International IO R Rectifier IRFR/U4105 HEXFET Power M O SFET Ultra Low On-Resistance Surface Mount IRFR4105 Straight Lead (IRFU4105) 150°C Operating Temperature Fast Switching Fully Avalanche Rated Voss = 55V ^D S (o n) = 0 .0 4 5 0 lD = 28A(D


    OCR Scan     		PDF IRFR4105) IRFU4105) IRFR/U4105 C-398

    Untitled

    Abstract: No abstract text available
    Text: IRFR410, IRFU410 S e m iconductor D ata S h eet 1.5A, 500V, 7.000 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a


    OCR Scan     		PDF IRFR410, IRFU410 000i2

    Untitled

    Abstract: No abstract text available
    Text: IRFU410A Advanced Power MOSFET IRFU410A B V • Improved Inductive Ruggedness ■ Rugged Polysilicon Gate Cell Structure ■ Fast Switching Times ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Improved High Temperature Reliability


    OCR Scan     		PDF IRFU410A