AN7254
Abstract: RFM12N35 RFM12N40
Text: [ /Title RFM12 N35, RFM12 N40 /Subject (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Creator () /DOCIN RFM12N35, RFM12N40 Semiconductor 12A, 350V and 400V, 0.500 Ohm,
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RFM12
RFM12N35,
RFM12N40
AN7254
RFM12N35
RFM12N40
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P11NK40ZFP
Abstract: P11NK40 P11NK40Z transistor p11nk40z P11NK B11NK40 STB11NK40ZT4 STP11NK40Z STP11NK40ZFP JESD97
Text: STB11NK40Z - STP11NK40ZFP STP11NK40Z N-channel 400V - 0.49Ω - 9A TO-220 - TO-220FP - D2PAK Zener-protected SuperMESHTM Power MOSFET General features Type VDSS RDS on ID Pw STB11NK40Z 400V <0.55Ω 10A 110W STP11NK40Z 400V <0.55Ω 10A 110W 3 3 1 STP11NK40ZFP
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STB11NK40Z
STP11NK40ZFP
STP11NK40Z
O-220
O-220FP
STB11NK40Z
O-220FP
O-220
P11NK40ZFP
P11NK40
P11NK40Z
transistor p11nk40z
P11NK
B11NK40
STB11NK40ZT4
STP11NK40Z
STP11NK40ZFP
JESD97
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IRFD310
Abstract: TB334
Text: IRFD310 Data Sheet January 2002 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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IRFD310
IRFD310
TB334
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Untitled
Abstract: No abstract text available
Text: STB11NK40Z, STP11NK40ZFP STP11NK40Z N-channel 400 V, 0.49 Ω, 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS on ID Pw STB11NK40Z 400V <0.55Ω 10A 110W STP11NK40Z 400V <0.55Ω 10A 110W 1 STP11NK40ZFP 400V <0.55Ω
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STB11NK40Z,
STP11NK40ZFP
STP11NK40Z
O-220,
O-220FP,
STB11NK40Z
O-220FP
O-220
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P11NK40ZFP
Abstract: p11nk40z transistor p11nk40z 8936 B11NK B2 marking code Zener zener diode 3.0 b2 STB11NK40Z 8936 v 3 STP11NK40Z
Text: STB11NK40Z, STP11NK40ZFP STP11NK40Z N-channel 400 V, 0.49 Ω, 9 A, TO-220, TO-220FP, D2PAK Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS on ID Pw STB11NK40Z 400V <0.55Ω 10A 110W STP11NK40Z 400V <0.55Ω 10A 110W 3 3 1 STP11NK40ZFP 400V
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STB11NK40Z,
STP11NK40ZFP
STP11NK40Z
O-220,
O-220FP,
STB11NK40Z
O-220FP
O-220
P11NK40ZFP
p11nk40z
transistor p11nk40z
8936
B11NK
B2 marking code Zener
zener diode 3.0 b2
STB11NK40Z
8936 v 3
STP11NK40Z
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IRFF320
Abstract: TA17404 TB334
Text: IRFF320 Data Sheet January 2002 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 2.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF320
TA17404.
IRFF320
TA17404
TB334
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IRFP350
Abstract: TB334
Text: IRFP350 Data Sheet January 2002 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFP350
TA17434.
IRFP350
TB334
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IRFP350
Abstract: TB334
Text: IRFP350 Data Sheet July 1999 16A, 400V, 0.300 Ohm, N-Channel Power MOSFET Ordering Information PART NUMBER IRFP350 PACKAGE TO-247 2319.4 Features • 16A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFP350
O-247
IRFP350
TB334
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IRFF330
Abstract: TA17414 TB334
Text: IRFF330 Data Sheet January 2002 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features • 3.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF330
TA17414.
IRFF330
TA17414
TB334
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IRFD310
Abstract: TB334 400V to 6V DC Regulator TO 220 Package
Text: IRFD310 Data Sheet July 1999 0.4A, 400V, 3.600 Ohm, N-Channel Power MOSFET 2324.4 Features • 0.4A, 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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IRFD310
IRFD310
TB334
400V to 6V DC Regulator TO 220 Package
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IRFD320
Abstract: TA17404 TB334
Text: IRFD320 Data Sheet January 2002 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 0.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFD320
IRFD320
TA17404
TB334
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IRFF310
Abstract: TB334
Text: IRFF310 Data Sheet January 2002 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET Features • 1.35A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRFF310
IRFF310
TB334
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IRFF320
Abstract: TA17404 TB334
Text: IRFF320 Data Sheet March 1999 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 2.5A, 400V Formerly developmental type TA17404. Ordering Information PACKAGE 1890.4 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFF320
TA17404.
IRFF320
TA17404
TB334
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IRFF330
Abstract: TA17414 TB334
Text: IRFF330 Data Sheet March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V Formerly developmental type TA17414. Ordering Information IRFF330 PACKAGE TO-205AF 1893.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,
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IRFF330
TA17414.
O-205AF
IRFF330
TA17414
TB334
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IRF330
Abstract: TA17414 TB334 204AA
Text: IRF330 Data Sheet March 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET 1570.4 Features • 5.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF330
TA17414.
IRF330
TA17414
TB334
204AA
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TOT - 4301
Abstract: LA 4303 IRFD320 TA17404 TB334
Text: IRFD320 Data Sheet July 1999 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 0.5A, 400V • rDS ON = 1.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRFD320
TB334
TA17404.
TOT - 4301
LA 4303
IRFD320
TA17404
TB334
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IRF340
Abstract: TA17424 to204ae TB334
Text: IRF340 Data Sheet March 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 10A, 400V • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance
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IRF340
TB334
O-204AE
TA17424.
IRF340
TA17424
to204ae
TB334
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IRFF310
Abstract: TB334
Text: IRFF310 Data Sheet March 1999 1.35A, 400V, 3.600 Ohm, N-Channel Power MOSFET • 1.35A, 400V • rDS ON = 3.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics
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IRFF310
TB334
TA17444.
IRFF310
TB334
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IRFP340
Abstract: TA17424 TB334
Text: IRFP340 Data Sheet January 2002 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET Features • 11A, 400V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are
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IRFP340
O-247
IRFP340
TA17424
TB334
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IRFP340
Abstract: TA17424 TB334 T2T-2
Text: IRFP340 Data Sheet July 1999 11A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 11A, 400V Ordering Information IRFP340 TO-247 • rDS ON = 0.550Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds
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IRFP340
O-247
TB334
TA17424.
IRFP340
TA17424
TB334
T2T-2
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Untitled
Abstract: No abstract text available
Text: tyvvys S RFM12N35, RFM12N40 Semiconductor y 12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 12A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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RFM12N35,
RFM12N40
RFM12N35
-204AA
TA17434.
AN7254
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Untitled
Abstract: No abstract text available
Text: IRFP350, IRFP351, IRFP352, IRFP353 14A and 16A, 350V and 400V, 0.3 and 0.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 14A and 16A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFP350,
IRFP351,
IRFP352,
IRFP353
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IRF332
Abstract: IRF3319 irf330
Text: I LArrrti— IRF330, IRF3319 IRF332, IRF333 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF330,
IRF3319
IRF332,
IRF333
TA17414.
IRF331,
RF333
IRF332
irf330
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irff330
Abstract: No abstract text available
Text: y*Rg*s IRFF330, IRFF331, IRFF332, IRFF333 3.0A and 3.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 3.0A and 3.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRFF330,
IRFF331,
IRFF332,
IRFF333
irff330
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