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Vishay Siliconix IRFD320PBF MOSFET N-CH 400V 490MA 4DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFD320PBF	Tube	2,713		1	1 $2.59 10 $1.671 100 $2.59 1000 $0.84765 10000 $0.78686	Buy Now
Rochester Electronics LLC IRFD320 MOSFET N-CH 400V 490MA 4HVMDIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFD320	Bulk			155	1 - 10 - 100 - 1000 $1.94 10000 $1.94	Buy Now
Vishay Siliconix IRFD320 MOSFET N-CH 400V 490MA 4DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFD320	Tube			2,500	1 - 10 - 100 - 1000 - 10000 $1.7875	Buy Now
Vishay Intertechnologies IRFD320PBF Trans MOSFET N-CH 400V 0.49A 4-Pin HVMDIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	IRFD320PBF		3,814		9	1 - 10 $0.8245 100 $0.7287 1000 $0.6189 10000 $0.6189	Buy Now
	IRFD320PBF		2,300		15	1 - 10 - 100 $0.8885 1000 $0.7065 10000 $0.6835	Buy Now
Arrow Electronics	IRFD320PBF		3,814	8 Weeks	1	1 $0.9045 10 $0.8245 100 $0.7287 1000 $0.6189 10000 $0.6189	Buy Now
	IRFD320PBF		2,300	8 Weeks	1	1 $1.2928 10 $1.0905 100 $0.8849 1000 $0.7036 10000 $0.6807	Buy Now
Newark	IRFD320PBF	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	IRFD320PBF		2,200	9 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
International Rectifier IRFD320
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFD320		29			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	IRFD320		416			1 $4.5 10 $4.5 100 $2.775 1000 $2.475 10000 $2.475	Buy Now
	IRFD320		64			1 $3.36 10 $3.36 100 $1.848 1000 $1.848 10000 $1.848	Buy Now
	IRFD320		50			1 $2.1 10 $2.1 100 $1.26 1000 $1.26 10000 $1.26	Buy Now
	IRFD320		12			1 $2.5436 10 $1.9077 100 $1.9077 1000 $1.9077 10000 $1.9077	Buy Now

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IRFD320 Datasheets (18)

Part	Manufacturer	Description	Datasheet Type	PDF
IRFD320	International Rectifier	HEXFET Power MOSFET	Original	PDF
IRFD320	International Rectifier	HEXFET Power Mosfet	Original	PDF
IRFD320	Intersil	0.5A, 400V, 1.800 ?, N-Channel Power MOSFET	Original	PDF
IRFD320	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
IRFD320	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 490MA 4-DIP	Original	PDF
IRFD320	General Electric	Power Transistor Data Book 1985	Scan	PDF
IRFD320	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFD320	International Rectifier	N-Channel Power MOSFETs	Scan	PDF
IRFD320	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRFD320	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRFD320	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
IRFD320	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFD320	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRFD320PBF	International Rectifier	HEXFET POWER MOSFET ( VDSS=400V , RDS(on)=1.8 Ohm , ID=0.49A )	Original	PDF

IRFD320PBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 400V 490MA 4-DIP	Original	PDF
IRFD320R	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRFD320R	International Rectifier	Rugged Series Power MOSFETs - N-Channel	Scan	PDF
IRFD320R	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF

IRFD320 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRFD320 Abstract: TA17404 TB334 Text: IRFD320 Data Sheet January 2002 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET Features • 0.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of	Original	PDF	IRFD320 IRFD320 TA17404 TB334
Untitled Abstract: No abstract text available Text: IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration RoHS • For Automatic Insertion	Original	PDF	IRFD320, SiHFD320 18-Jul-08
Untitled Abstract: No abstract text available Text: IRFD320, SiHFD320 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt rating 400 RDS(on) (Ω) VGS = 10 V • Repetitive avalanche rated 1.8 20 Qgs (nC) 3.3 • End stackable Qgd (nC) 11 • Fast switching Configuration	Original	PDF	IRFD320, SiHFD320 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: IRFD320, IRFD321, IRFD322, IRFD323 S E M I C O N D U C T O R 0.5A and 0.4A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.5A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	PDF	IRFD320, IRFD321, IRFD322, IRFD323 TA17404.
Untitled Abstract: No abstract text available Text: IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration COMPLIANT • End Stackable • Fast Switching	Original	PDF	IRFD320, SiHFD320 2002/95/EC 11-Mar-11
Untitled Abstract: No abstract text available Text: IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration COMPLIANT • End Stackable • Fast Switching	Original	PDF	IRFD320, SiHFD320 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFD320R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)500m# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ	Original	PDF	IRFD320R
Untitled Abstract: No abstract text available Text: IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration RoHS • For Automatic Insertion	Original	PDF	IRFD320, SiHFD320 12-Mar-07
Untitled Abstract: No abstract text available Text: IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration COMPLIANT • End Stackable • Fast Switching	Original	PDF	IRFD320, SiHFD320 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: PD -9.1226 IRFD320 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 1.8Ω ID = 0.49A Description Third Generation HEXFETs from International Rectifier provide the designer	Original	PDF	IRFD320 08-Mar-07
Untitled Abstract: No abstract text available Text: IRFD320_RC, SiHFD320_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRFD320 SiHFD320 AN609, CONFIGURA-Oct-10 0426m 8968m 4501m 6212m
IRFD120 Abstract: No abstract text available Text: PD- 95930 IRFD320PbF Lead-Free Document Number: 91134 10/28/04 www.vishay.com 1 IRFD320PbF Document Number: 91134 www.vishay.com 2 IRFD320PbF Document Number: 91134 www.vishay.com 3 IRFD320PbF Document Number: 91134 www.vishay.com 4 IRFD320PbF Document Number: 91134	Original	PDF	IRFD320PbF IRFD120 IRFD120
Untitled Abstract: No abstract text available Text: IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) () • Repetitive Avalanche Rated VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration COMPLIANT • End Stackable • Fast Switching	Original	PDF	IRFD320, SiHFD320 2002/95/EC 18-Jul-08
IRFD320 Abstract: No abstract text available Text: IRFD320, SiHFD320 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS V 400 RDS(on) (Ω) • Repetitive Avalanche Rated VGS = 10 V 1.8 Qg (Max.) (nC) 20 Qgs (nC) 3.3 Qgd (nC) 11 Configuration COMPLIANT • End Stackable • Fast Switching	Original	PDF	IRFD320, SiHFD320 2002/95/EC 18-Jul-08 IRFD320

Untitled Abstract: No abstract text available Text: IRFD320 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)500m# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)2.0# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ	Original	PDF	IRFD320
IRFD320 Abstract: No abstract text available Text: Previous Datasheet Index Next Data Sheet PD -9.1226 IRFD320 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 1.8Ω	Original	PDF	IRFD320 IRFD320
IRFD320 Abstract: PN diode Text: PD -9.1226 IRFD320 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 400V RDS on = 1.8Ω ID = 0.49A Description Third Generation HEXFETs from International Rectifier provide the designer	Original	PDF	IRFD320 IRFD320 PN diode
TOT - 4301 Abstract: LA 4303 IRFD320 TA17404 TB334 Text: IRFD320 Data Sheet July 1999 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 0.5A, 400V • rDS ON = 1.800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics	Original	PDF	IRFD320 TB334 TA17404. TOT - 4301 LA 4303 IRFD320 TA17404 TB334
IRFD321 Abstract: IRFD322 IRFD323 transistor d722 IRFD320 irf032 Text: Standard Power MOSFETs- IRFD320, IRFD321, IRFD322, IRFD323 File Number 2325 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 0.5 A and 0.4 A, 350 V - 400 V	OCR Scan	PDF	IRFD320, IRFD321, IRFD322, IRFD323 92CS-33741 IRFD323 IRFD321 IRFD322 transistor d722 IRFD320 irf032
irfd320 Abstract: No abstract text available Text: H a IRFD320, IRFD321, IRFD322, IRFD323 r r i s ” “ I CONDUCTOE 0.5A and 0.4A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.5A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	OCR Scan	PDF	IRFD320, IRFD321, IRFD322, IRFD323 TA1740GE RFD322, irfd320
FD-321 Abstract: No abstract text available Text: • 43D2271 0054125 fili ■ OR HARRIS HAS IR FD 320/321/322/323 IRFD320R/321R /322R /323R N-Channel Power MOSFETs Avalanche Energy Rated August 1991 Features • Package 4 - P IN D IP 0.5A and Q.4A, 350V - 400V T O P VIE W • rDS on = 1-8H and 2 .5 fl	OCR Scan	PDF	43D2271 IRFD320R/321R /322R /323R IRFD320, 1RFD332, IRFD322, IRFD323 IRFD320R, IRFD332R, FD-321
D82CQ2 Abstract: No abstract text available Text: [FIT FIELD EFFECT POWER TRANSISTOR IRFD320.321 D82CQ2.Q1 0.5 AMPERES 400, 350 VOLTS RPS ON = 1-8 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged	OCR Scan	PDF	D82CQ2 00A///s, IRFD321/D82CQ1 IRFD320/D82CQ2 100ms
Untitled Abstract: No abstract text available Text: IRFD320 S em iconductor Data Sheet July 1999 0.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET • 0.5A, 400V • rDS ON = 1 -800i2 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics	OCR Scan	PDF	IRFD320 -800i2 TB334 TA17404.
Untitled Abstract: No abstract text available Text: w vys S IRFD320, IRFD321, IRFD322, IRFD323 S e m ico n d ucto r y y 0.5A and 0.4A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 0.5A and 0.4A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate	OCR Scan	PDF	IRFD320, IRFD321, IRFD322, IRFD323

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IRFD320 Datasheets (18)

IRFD320 Datasheets Context Search

IRFD320

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IRFD120

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IRFD320

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IRFD320

IRFD320

TOT - 4301

IRFD321

irfd320

FD-321

D82CQ2

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