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    RFM12 Price and Stock

    onsemi IRFM120ATF

    MOSFET N-CH 100V 2.3A SOT223-4
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    DigiKey IRFM120ATF Cut Tape 11,099 1
    • 1 $0.92
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    • 1000 $0.31112
    • 10000 $0.28701
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    IRFM120ATF Digi-Reel 11,099 1
    • 1 $0.92
    • 10 $0.617
    • 100 $0.92
    • 1000 $0.31112
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    IRFM120ATF Reel 8,000 4,000
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    Avnet Americas IRFM120ATF Reel 4,000
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    IRFM120ATF Reel 22 Weeks 4,000
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    Mouser Electronics IRFM120ATF 3,730
    • 1 $0.82
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    • 100 $0.422
    • 1000 $0.298
    • 10000 $0.262
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    Newark IRFM120ATF Cut Tape 1
    • 1 $0.79
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    • 100 $0.482
    • 1000 $0.341
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    IRFM120ATF Reel 4,000
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    Bristol Electronics IRFM120ATF 995
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    Richardson RFPD IRFM120ATF 4,000
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    Avnet Asia IRFM120ATF 22 Weeks 4,000
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    Avnet Silica IRFM120ATF 23 Weeks 4,000
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    Chip1Stop IRFM120ATF Cut Tape 4,000
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    • 100 $0.408
    • 1000 $0.276
    • 10000 $0.275
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    EBV Elektronik IRFM120ATF 24 Weeks 4,000
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    Dremel RFM12V

    12 IN. 9/12 TPI AP FLUSH CUT 5 P
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    DigiKey RFM12V Bulk 5
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    Rochester Electronics LLC RFM12P08

    P-CHANNEL POWER MOSFET
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    Dremel RFM12V-25B

    12 IN. 9/12 TPI AP FLUSH CUT 25
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    DigiKey RFM12V-25B Bulk 1
    • 1 $6.79
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    Toshiba America Electronic Components RFM12U7X(TE12L,Q)

    RF MOSFET Transistors Radio-Freq PwrMOSFET N-Ch 4A 20W 20V
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    Mouser Electronics RFM12U7X(TE12L,Q)
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    RFM12 Datasheets (55)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFM12N08 Intersil 12A, 80V and 100V, 0.200 ?, N-Channel Power MOSFETs Original PDF
    RFM12N08 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 80V. Drain current RMS continuous 12A. Scan PDF
    RFM12N08 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFM12N08 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFM12N08 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFM12N08 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFM12N08L General Electric N-channel logic level power field-effect transistor (LL FET). 80V, 12A. Scan PDF
    RFM12N08L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFM12N08L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFM12N10 Intersil 12A, 80V and 100V, 0.200 ?, N-Channel Power MOSFETs Original PDF
    RFM12N10 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Drain current RMS continuous 12A. Scan PDF
    RFM12N10 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFM12N10 International Rectifier RF and BUZ Series Power MOSFETs - N-Channel Scan PDF
    RFM12N10 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFM12N10 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFM12N10 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    RFM12N10L General Electric N-channel logic level power field-effect transistor (LL FET). 100V, 12A. Scan PDF
    RFM12N10L Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    RFM12N10L Unknown Shortform Datasheet & Cross References Data Short Form PDF
    RFM12N18 Intersil 12A, 180V and 200V, 0.250 ?, N-Channel Power MOSFETs Original PDF

    RFM12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RFM12B RFM12B Universal ISM Band FSK Transceiver RFM12B DESCRIPTION Hoperf’ RFM12B is a single chip, low power, multi-channel FSK transceiver designed for use in applications requiring FCC or ETSI conformance for unlicensed use in the 433, 868 and 915 MHz bands.


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    PDF RFM12BÂ RFM12B RFM12B

    tx rx module 315mhz

    Abstract: tx rx 315mhz RFM12 RFM12 B Rx module 315mhz 869MHZ 315MHZ 434MHZ tx module 315mhz SW-200
    Text: RFM12 Demo RFM12 Demo Kit User Manual HOPE MICROELECTRONICS CO.,LTD Rm B.8/F LiJingGe Emperor Regency 6012 ShenNan Rd., Shenzhen,China Tel: 86-755-82973805 Fax: 86-755-82973550 Email: [email protected] [email protected] Website: http://www.hoperf.com http://hoperf.en.alibaba.com


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    PDF RFM12 RFM12 tx rx module 315mhz tx rx 315mhz RFM12 B Rx module 315mhz 869MHZ 315MHZ 434MHZ tx module 315mhz SW-200

    433mhz rx tx module

    Abstract: RFM12B-433S2P RFM12B-433S1P RFM12B RFM12B-433S2 RFM12B-868D RFM12B-433DP RFM12B-433-S1 rfm12b868s1 rfm12b-433s1
    Text: RFM12B Datasheet REV2.0 UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE RFM12B (the purpose of this spec covers mainly for the physical characteristic of the module, for register configure and its related command info please refer to RF12B data sheets) RFM12B


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    PDF RFM12B RF12B RFM12B 433/868/915MHZ 433mhz rx tx module RFM12B-433S2P RFM12B-433S1P RFM12B-433S2 RFM12B-868D RFM12B-433DP RFM12B-433-S1 rfm12b868s1 rfm12b-433s1

    RFM12-433-D

    Abstract: tx rx module 315mhz RFM12 CRYSTAL 433 315 mhz crystal Rx module 315mhz RFM12-868-S1 433Mhz crystal oscillator RFM124 45KHZ
    Text: RFM12 UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE RFM12 (the purpose of this spec covers mainly for the physical characteristic of the module, for register configure and its related command info please refer to RF12 data sheets) RFM12 General Introduction


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    PDF RFM12 RFM12 315/433/868/915MHZ RFM12-433-D tx rx module 315mhz CRYSTAL 433 315 mhz crystal Rx module 315mhz RFM12-868-S1 433Mhz crystal oscillator RFM124 45KHZ

    RFM12U7X

    Abstract: No abstract text available
    Text: RFM12U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


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    PDF RFM12U7X RFM12U7X

    12W55

    Abstract: RFM12U7X 2-5N1A
    Text: RFM12U7X 東芝電界効果トランジスタ シリコンNチャネルMOS形 RFM12U7X ○ VHF/UHF 帯電力増幅用 単位: mm ご注意 本資料に掲載されている製品は通信機器向高周波電力増幅用に使 用されることを意図しています。他の用途に使用することは意図もされてい


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    PDF RFM12U7X 12W55 RFM12U7X 2-5N1A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Devices RF Power MOSFET RFM 12U7X RFM12U7X Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds V, 6.0V, 4.8 Vds = 4.8V, 4.8V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~


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    PDF RFM12U7X 150mA, 350mA, 550mA, 750mA, 950mA, 1150mA

    Untitled

    Abstract: No abstract text available
    Text: RFM12U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


    Original
    PDF RFM12U7X

    Untitled

    Abstract: No abstract text available
    Text: RFM12 Demo RFM12 Demo Kit User Manual HOPE MICROELECTRONICS CO.,LTD Add: 4/F, Block B3, East Industrial Area, Huaqiaocheng, Shenzhen, Guangdong, China Tel: 86-755-82973805 Fax: 86-755-82973550 Email: [email protected] [email protected] Website: http://www.hoperf.com


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    PDF RFM12 RFM12

    RFM12B-433D

    Abstract: PCB Antenna matching RF12B 433mhz rx tx module RFM12B rfm12b-868 RFM12B-868S1 433mhz remote control transmitter and receiver rfm12b868s1 pll 40 MHZ remote control transmitter
    Text: RFM12B UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE RFM12B (the purpose of this spec covers mainly for the physical characteristic of the module, for register configure and its related command info please refer to RF12B data sheets) RFM12B General Introduction


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    PDF RFM12B RF12B RFM12B 433/868/915MHZ RFM12B-433D PCB Antenna matching 433mhz rx tx module rfm12b-868 RFM12B-868S1 433mhz remote control transmitter and receiver rfm12b868s1 pll 40 MHZ remote control transmitter

    RFM12BP

    Abstract: 433mhz 500mw RFM12BP-868 868Mhz FSK 500mW 433mhz rx tx module 433MHZ amplifier 500mw RFM12BP-433 433 to 450 mhz amplifier module RFM12B RF12B
    Text: RFM12BP Datasheet REV2.3 UNIVERSAL ISM BAND FSK TRANSCEIVER MODULE WITH 500mW OUTPUT POWER RFM12BP (the purpose of this spec covers mainly for the physical characteristic of the module, for register configure and its related command info please refer to RF12B datasheet)


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    PDF RFM12BP 500mW RF12B RFM12BP 433/868/915MHZ 500mW -117dBm 433mhz 500mw RFM12BP-868 868Mhz FSK 500mW 433mhz rx tx module 433MHZ amplifier 500mw RFM12BP-433 433 to 450 mhz amplifier module RFM12B

    AN7254

    Abstract: RFM12N35 RFM12N40
    Text: [ /Title RFM12 N35, RFM12 N40 /Subject (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Author () /Keywords (12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs) /Creator () /DOCIN RFM12N35, RFM12N40 Semiconductor 12A, 350V and 400V, 0.500 Ohm,


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    PDF RFM12 RFM12N35, RFM12N40 AN7254 RFM12N35 RFM12N40

    Untitled

    Abstract: No abstract text available
    Text: RFM12U7X TOSHIBA Field Effect Transistor Silicon N Channel MOS Type RFM12U7X VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment. These


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    PDF RFM12U7X

    12n08

    Abstract: rca application notes RFP12N10 pt 4115 TA9284 AN7260 AN7254 RFM12N08 RFM12N10 RFP12N08
    Text: Standard Power MOSFETs RFM12N08, RFM12N10, RFP12N08, RFP12N10 File N um ber 1386 N-Channel Enhancernent-Mode Power Field-Effect Transistors 12 A, 80 and 100 V TdS o n ' 0.2 f i Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds


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    PDF RFM12N08, RFM12N10, RFP12N08, RFP12N10 92CS-3374I RFM12N08 RFM12N10 RFP1I2N08 RFM12N18, 12n08 rca application notes pt 4115 TA9284 AN7260 AN7254 RFP12N08

    f12n10l

    Abstract: f12N08L F12N08L FET f12n10 f12n08 RFP12N08L RFM12N08L "Voltage to Current Converter" RFM12N10L RFP12N10L
    Text: 3875081 G E-" S O L I D S T A T E D 1 ^ F | BflVSDfll D Glflim a r w / / Logic-Level Power MOSFETs - RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L


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    PDF 01fl4Mfl RFM12N08L, RFM12N10L, RFP12N08L, RFP12N10L RFM12N08L RFM12N10L RFP12N08L RFP12N10L* f12n10l f12N08L F12N08L FET f12n10 f12n08 "Voltage to Current Converter"

    Untitled

    Abstract: No abstract text available
    Text: J W S RFM12N08, RFM12N10, RFP12N08, RFP12N10 S em iconductor October 1998 Data Sheet 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


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    PDF RFM12N08, RFM12N10, RFP12N08, RFP12N10 TB334 AN7254 AN7260.

    RFP12N08

    Abstract: TA9284 RFM12N08 RFM12N10 RFP12N10
    Text: 3 8 7 5 0 8 1 G E S O L I D S T A T E 01 Standard Power M O S F E T s_ _ DE ,| 3Ô 7 S Ü Û 1 DOlfllSB 1 | _ RFM12N08, RFM12N10, RFP12N08, RFP12N10 File Number 1386 N-Channel Enhancement-Mode


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    PDF RFM12N08, RFM12N10, RFP12N08, RFP12N10 92cs-33t4i RFM12N08 RFM12N10 RFP12N08 RFP12N10 l3fl750fll TA9284

    RFP12N20

    Abstract: RFP12N18 RFM12N18 RFM12N20
    Text: ^01 DE I 3fl7SGfll OOiaiiS? =1 3875081 G E S O L I D S T A T E 01E 18157 D Standard Power MOSFETs-:- - RFM12N18, RFM12N20, RFP12N18, RFP12N20 File N u m b e r


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    PDF RFM12N18, RFM12N20, RFP12N18, RFP12N20 92cs-33741 RFM12N18 RFM12N20 RFP12N18 RFP12N20*

    RFM12P10

    Abstract: RFP12P10 12P10 RFM12P08 RFP12P08 TA9411 TA9410
    Text: Standard Power MOSFETs RFM12P08, RFM12P10, RFP12P08, RFP12P10 F ile N u m b e r 1495 Power MOS Field-Elffect Transistors P-Channel Enhancement-Mode Power Field-Effect Transistors TERMINAL DIAGRAM D 12 A , - 8 0 V a n d - 1 0 0 V rD s on = 0 .3 Q Features:


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    PDF RFM12P08, RFM12P10, RFP12P08, RFP12P10 and-100 RFM12P08 RFM12P10 RFP12P08 RFP12P10* RFP12P10 12P10 TA9411 TA9410

    RFM12N40

    Abstract: RFM12 B RFM12N35
    Text: Standard Power MOSFETs — RFM12N35, RFM12N40 File Number 1787 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 350 V - 4 0 0 V N-CHANNEL ENHANCEMENT MODE rDs on = 0 .5 O Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


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    PDF RFM12N35, RFM12N40 RFM12N35 RFM12N40* AN-7254 AN-7260. 92cs-37236 92cs-37237 92cs-37238 92cs-37239 RFM12N40 RFM12 B

    Untitled

    Abstract: No abstract text available
    Text: w vys S RFM12N18, RFM12N20, RFP12N18, RFP12N20 Semiconductor y y 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 12A, 180V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


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    PDF RFM12N18, RFM12N20, RFP12N18, RFP12N20 250S2 TB334 TA09293. 75BVnss 75BVncc 50BVd

    Untitled

    Abstract: No abstract text available
    Text: tyvvys S RFM12N35, RFM12N40 Semiconductor y 12A, 350V and 400V, 0.500 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 12A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


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    PDF RFM12N35, RFM12N40 RFM12N35 -204AA TA17434. AN7254

    f12N08L

    Abstract: 12N08L FP12N10L 2n10l 12N10L rfm12 ic 572H
    Text: RFM12 N08L/1OL R FP 12N 08L/10L HARRIS N-Channel Logic Level Power Field-Effect Transistors L^FET August 1991 Package Features TO-204AA BOTTOM VIEW • 12A, 8 0 V and 100V • r D S (O N ) = 0 . 2 f l SOURCE ^ • Design O p tim ized for 5V G ate Drives


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    PDF RFM12 N08L/1OL 08L/10L O-204AA O-220AB 92CS-372I6 f12N08L 12N08L FP12N10L 2n10l 12N10L rfm12 ic 572H

    RFP12N18

    Abstract: RFP12N20 RFP12M20 RFP mosfets RFM12N18 RFM12N20
    Text: Standard Power MOSFETs RFM12N18, RFM12N20, RFP12N18, RFP12N20 F ile N u m b e r 1461 N-Channel Enhancement-Mode Power Field-Effect Transistors 12 A, 180 and 200 V rDs on : 0.25 n Features: • SOA is power-dissipation lim ited • Nanosecond sw itching speeds


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    PDF RFM12N18, RFM12N20, RFP12N18, RFP12N20 92CS-33741 RFM12N18 RFM12N20 RFP12N18 RFP12N20* RFP12N20 RFP12M20 RFP mosfets