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    Panasonic Electronic Components 2SK221100L

    MOSFET N-CH 30V 1A MINIP3-F1
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    2SK2211 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK2211 Kexin N-Channel MOSFET Original PDF
    2SK2211 Panasonic N-Channel MOS FET Original PDF
    2SK2211 Panasonic Silicon N-Channel MOS FET Original PDF
    2SK2211 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK2211 Panasonic TRANS MOSFET N-CH 30V 1A 3MINIP3-F1 Original PDF
    2SK2211 Panasonic Silicon N-Channel MOS FET Original PDF
    2SK2211 TY Semiconductor N-Channel MOSFET - SOT-89 Original PDF
    2SK221100L Panasonic FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 1A MINI-PWR Original PDF

    2SK2211 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK2211

    Abstract: No abstract text available
    Text: Silicon MOS FETs Small Signal 2SK2211 Silicon N-Channel MOS FET For switching Unit: mm 4.5±0.1 • Features 1.6±0.2 1.5±0.1 1.5±0.1 3° 1.0+0.1 –0.2 3 2 0.5±0.08 1 0.4±0.08 2.5±0.1 4.0+0.25 –0.20 ● Low ON-resistance RDS(on) ● High-speed switching


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    PDF 2SK2211 2SK2211

    2SK2211

    Abstract: No abstract text available
    Text: Silicon MOS FETs Small Signal 2SK2211 Silicon N-Channel MOS FET Unit : mm For switching 1.5±0.1 4.5±0.1 0.4±0.08 2.5±0.1 0.4 max. 45˚ +0.1 • Low ON-resistance RDS(ON) • High-speed switching • Mini-power type package, allowing downsizing of the sets and


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    PDF 2SK2211 2SK2211

    2SK2211

    Abstract: No abstract text available
    Text: Silicon MOS FETs Small Signal 2SK2211 Silicon N-Channel MOS FET For switching unit: mm • Features 0.5±0.08 1.5±0.1 ■ Absolute Maximum Ratings (Ta = 25°C) Parameter * Symbol 2.5±0.1 1.0–0.2 +0.1 0.4±0.08 +0.25 0.4max. 45˚ 4.0–0.20 2.6±0.1 ● Low ON-resistance RDS(on)


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    PDF 2SK2211 2SK2211

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK2211 Silicon N-channel MOSFET Unit: mm 4.5±0.1 For switching circuits 1.6±0.2 1.5±0.1 1.5±0.1 2.5±0.1 3˚ 3 2 0.5±0.08 1 0.4±0.08 1.0+0.1 –0.2 • Low ON resistance


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    PDF 2002/95/EC) 2SK2211

    2SK2211

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK2211 Silicon N-channel MOSFET Unit: mm 4.5±0.1 For switching circuits 1.6±0.2 1.5±0.1 2.5±0.1 3˚ 3 2 0.5±0.08 1 0.4±0.08 1.5±0.1 1.0+0.1 –0.2 M Di ain


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    PDF 2002/95/EC) 2SK2211 2SK2211

    Untitled

    Abstract: No abstract text available
    Text: 2SK2211 Silicon MOS FETs Small Signal 2SK2211 Silicon N-Channel MOS Unit : mm For switching 1.5±0.1 ● Downsizing of sets by mini-type package and automatic insertion by 45˚ 0.4±0.08 0.5±0.08 1.5±0.1 magazine packing are available. +0.25 High-speed switching


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    PDF 2SK2211 SC-62

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK2211G Silicon N-channel MOSFET For switching circuits • Features ■ Package • Low ON resistance • High-speed switching • Mini type package, allowing downsizing of the sets and automatic


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    PDF 2002/95/EC) 2SK2211G

    5V GATE TO SOURCE VOLTAGE MOSFET

    Abstract: 2SK2211 sot89 Marking mosfet marking 2M
    Text: MOSFET SMD Type Silicon N-Channel MOSFET 2SK2211 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low ON-resistance RDS ON 1 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 High-speed switching +0.1 4.00-0.1


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    PDF 2SK2211 OT-89 5V GATE TO SOURCE VOLTAGE MOSFET 2SK2211 sot89 Marking mosfet marking 2M

    2SK2211

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK2211 Silicon N-channel MOSFET Unit: mm 4.5±0.1 For switching circuits 1.6±0.2 1.5±0.1 1.0+0.1 –0.2 3 2 0.5±0.08 1 0.4±0.08 3˚ ue pl d in an c se ed lud


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    PDF 2002/95/EC) 2SK2211 2SK2211

    2SK2211

    Abstract: No abstract text available
    Text: Silicon MOS FETs Small Signal 2SK2211 Silicon N-Channel MOS FET Unit : mm For switching 1.5±0.1 4.5±0.1 0.4±0.08 2.5±0.1 0.4 max. 45˚ +0.1 • Low ON-resistance RDS(ON) • High-speed switching • Mini-power type package, allowing downsizing of the sets and


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    PDF 2SK2211 2SK2211

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK2211 Silicon N-channel MOSFET Unit: mm 4.5±0.1 For switching circuits 1.6±0.2 1.5±0.1 1.5±0.1 2.5±0.1 4.0+0.25 –0.20 3˚ 3 2 0.5±0.08 1 0.4±0.08 0.4±0.04


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    PDF 2002/95/EC) 2SK2211

    2SK2211

    Abstract: No abstract text available
    Text: Silicon MOSFETs Small Signal 2SK2211 Silicon N-channel MOSFET Unit: mm 4.5±0.1 For switching circuits 1.6±0.2 1.5±0.1 1.5±0.1 2.5±0.1 3˚ 3 2 0.5±0.08 1 0.4±0.08 1.0+0.1 –0.2 • Low ON resistance • High-speed switching • Mini type package, allowing downsizing of the sets and automatic


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    PDF 2SK2211 2SK2211

    Untitled

    Abstract: No abstract text available
    Text: IC SMD Type Type SMD Product specification 2SK2211 SOT-89 Unit: mm 4.50 1.50 +0.1 -0.1 +0.1 -0.1 +0.1 1.80-0.1 +0.1 2.50-0.1 Low ON-resistance RDS ON 1 3 2 +0.1 0.53-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 0.48-0.1 +0.1 0.80-0.1 High-speed switching +0.1 4.00-0.1


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    PDF 2SK2211 OT-89

    2SK2211G

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOSFETs (Small Signal) 2SK2211G Silicon N-channel MOSFET M Di ain sc te on na tin nc ue e/ d For switching circuits • Package • Low ON resistance • High-speed switching • Mini type package, allowing downsizing of the sets and automatic


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    PDF 2002/95/EC) 2SK2211G 2SK2211G

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    SSSMini3-F1 transistor

    Abstract: 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614
    Text: FETs, IPD, IGBTs, GaAs MMICs • Silicon MOS FETs ● For Small Signal Application Structure Part No. Absolute Maximum Ratings Ta = 25 °C VDS ✽V VGSO ID PD DSS (V) N-ch (V) (A) 2SK0601 1 000 (2SK601) 2SK0614 (2SK614) (mW) Electrical Characteristics (Ta = 25 °C)


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    PDF 2SK0601 2SK614) 2SK664) 2SK665) 2SK1228 2SK1374 2SK3539 2SK3546J 2SK3547 2SK2211 SSSMini3-F1 transistor 2SK0664 2sk60 2SK0601 2SK0614 2SK0615 2SK0655 2SK0656 2SK601 2SK614

    2SK2276

    Abstract: 2sk227
    Text: FET, IGBT, IPD • Silicon MOS FETs # For Small Signal Absolute Maximum Ratings Ta = 2 5 °C Application Structure Type No. (mW) typ (Q> max typ* (ns) 0.5 1000 *300 2 *15 *20 Mini-Power Type D19 0.5 0.5 750 1000 150 200 *300 *300 2 2 * 15 * 15 20 20 40 40


    OCR Scan
    PDF 2SK601 2SK614 2SK615 2SK620 2SK2276 2SK2277 2SK2342 2SK2474 2SK2495 A2SK2660 2SK2276 2sk227

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan
    PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202

    K614

    Abstract: K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996
    Text: Field Effect Trarisistors _ i_ • Silicon Junction FETs Absolute Maximum Ratings Package No. S Mini Type Mini Type (05} Electrical Characteristics (Ta — 25 "C ) (Ta = 25 °C ) Application New S Type TO -92 (D10)


    OCR Scan
    PDF 2SK662 2SK1103 2SJ163 2SK198 2SK374 2SK123 2SK1216 2SK1842 2SJ164 2SK301 K614 K 1833 2SK 129 A gn1015 2SK1257 equivalent 2SK1962 2sk 170 Pin GN1021 IC STK411-220E CIRCUIT K996