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    Panasonic Electronic Components 2SK11030QL

    JFET N-CH 20MA MINI3-G1
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    2SK1103 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SK1103 Panasonic TRANS JFET N-CH 6A 3MINI3-G1 Original PDF
    2SK1103 Panasonic N-Channel Junction FET Original PDF
    2SK1103 Panasonic Silicon N-Channel Junction FET Original PDF
    2SK1103 Panasonic Silicon N-Channel Junction FET Original PDF
    2SK1103 Panasonic FETs, IPD, IGBTs, GaAs MMICs Original PDF
    2SK1103 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK1103 Panasonic Silicon MOS FETs Scan PDF
    2SK11030QL Panasonic JFETs (Junction Field Effect), Discrete Semiconductor Products, JFET N-CH 20MA 150MW MINI-3 Original PDF
    2SK1103O Panasonic Silicon N-Channel Junction FET Original PDF
    2SK1103O Panasonic Silicon N-Channel Junction FET Original PDF
    2SK1103P Panasonic TRANS JFET N-CH 1.5A 3MINI3-G1 Original PDF
    2SK1103P Panasonic Silicon N-Channel Junction FET Original PDF
    2SK1103Q Panasonic TRANS JFET N-CH 3A 3MINI3-G1 Original PDF
    2SK1103Q Panasonic Silicon N-Channel Junction FET Original PDF
    2SK1103R Panasonic TRANS JFET N-CH 6A 3MINI3-G1 Original PDF
    2SK1103R Panasonic Silicon N-Channel Junction FET Original PDF

    2SK1103 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SK1103 Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction Unit : mm For switching Complementary with 2SJ163 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID ±20 mA Gate current IG 10 mA Allowable power dissipation


    Original     		PDF 2SK1103 2SJ163

    analog switching ic

    Abstract: 2SK1103 UN1213 UNR1213 XN08081 XN8081
    Text: Composite Transistors XN08081 XN8081 Silicon N-channel junction (FET) Silicon NPN epitaxial planer transistor (Tr) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number of Element • 2SK1103 + UNR1213 (UN1213)


    Original     		PDF XN08081 XN8081) 2SK1103 UNR1213 UN1213) analog switching ic 2SK1103 UN1213 UNR1213 XN08081 XN8081

    2SK1103

    Abstract: XN1D873
    Text: Composite Transistors XN1D873 Silicon N-channel junction FET Unit: mm For analog switching +0.2 2.8 -0.3 +0.25 0.65±0.15 +0.1 +0.1 0 to 0.1 2SK1103 x 2 elements • Absolute Maximum Ratings 1 : Gate Tr1 2 : Gate (Tr2) 3 : Source (Tr2) (Ta=25˚C) Parameter


    Original     		PDF XN1D873 2SK1103 2SK1103 XN1D873

    2SK1103

    Abstract: XP1D873
    Text: Composite Transistors XP1D873 Silicon N-channel junction FET Unit: mm 0.2±0.05 For analog switching 2.1±0.1 2.0±0.1 2 5 3 4 0.9± 0.1 • Basic Part Number of Element 2SK1103 x 2 elements 0 to 0.1 ● 0.7±0.1 +0.05 ● 1 0.425 0.12 – 0.02 ● Two elements incorporated into one package.


    Original     		PDF XP1D873 2SK1103 2SK1103 XP1D873

    2SJ0163

    Abstract: 2SJ163 2SK1103
    Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 Unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation


    Original     		PDF 2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103

    FET121

    Abstract: 2SK1103 XN0D873 XN1D873
    Text: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 4 5 1.50+0.25 –0.05 3 1 1.1+0.2 –0.1 10˚ • 2SK1103 x 2 • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF XN0D873 XN1D873) 2SK1103 SC-74A FET121 2SK1103 XN0D873 XN1D873

    2SJ163

    Abstract: 2SK1103
    Text: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS −65 V Drain current ID 20 mA Gate current


    Original     		PDF 2SK1103 2SJ163 2SJ163 2SK1103

    2SK1103

    Abstract: UN1213 XP8081
    Text: Composite Transistors XP8081 Silicon N-channel junction FET Tr1 Silicon NPN epitaxial planer transistor (Tr2) Unit: mm For analog switching (Tr1)/switching (Tr2) 1 6 2 5 3 4 0 to 0.1 2SK1103+UN1213 (transistors with built-in resistor) 0.12 –0.02 0.9±0.1


    Original     		PDF XP8081 2SK1103 UN1213 UN1213 XP8081

    FET121

    Abstract: No abstract text available
    Text: Composite Transistors XN0D873 XN1D873 Silicon N-channel junction FET Unit: mm 2.90+0.20 –0.05 1.9±0.1 0.95 0.95 4 5 1.50+0.25 –0.05 3 1 • Basic Part Number 0.65±0.15 0.30+0.10 –0.05 10˚ 1.1+0.2 –0.1 • 2SK1103 x 2 Drain current Gate current


    Original     		PDF XN0D873 XN1D873) 2SK1103 FET121

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ0163 (2SJ163) unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 Unit Gate to Drain voltage VGDS −65 V Drain current ID 20 mA Gate current


    Original     		PDF 2SK1103 2SJ0163 2SJ163) O-236 SC-59

    2SJ0163

    Abstract: 2SJ163 2SK1103
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET For switching circuits Complementary to 2SK1103 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		PDF 2002/95/EC) 2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103

    Junction-FET

    Abstract: 2SJ163 2SK1103
    Text: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ163 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS −65 V Drain current ID 20 mA Gate current


    Original     		PDF 2SK1103 2SJ163 Junction-FET 2SJ163 2SK1103

    VDSV

    Abstract: 2SJ163 2SK1103 mini 29
    Text: Silicon Junction FETs Small Signal 2SJ163 Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 0.95 +0.1 0.4 –0.05 0.16 –0.06 VGDS 65 V Drain current ID −20


    Original     		PDF 2SJ163 2SK1103 VDSV 2SJ163 2SK1103 mini 29

    2SJ0163

    Abstract: 2SJ163 2SK1103
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET M Di ain sc te on na tin nc ue e/ d For switching circuits Complementary to 2SK1103 ue pl d in an c se ed lud


    Original     		PDF 2002/95/EC) 2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103

    2SJ0163

    Abstract: 2SK1103
    Text: Silicon Junction FETs Small Signal 2SK1103 Silicon N-channel junction FET Unit: mm For switching circuits Complementary to 2SJ0163 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) • Absolute Maximum Ratings Ta = 25°C Rating Unit VGDS −65 V ID 20 mA


    Original     		PDF 2SK1103 2SJ0163 2SJ0163 2SK1103

    Untitled

    Abstract: No abstract text available
    Text: 2SJ163 Silicon Junction FETs Small Signal 2SJ163 Silicon P-Channel Junction Unit : mm For general use switching Complementary with 2SK1103 +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 1.45 +0.1 3 V Drain current ID –20 mA Gate current IG –10


    Original     		PDF 2SJ163 2SK1103

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK1103 Silicon N-channel junction FET For switching circuits Complementary to 2SJ0163 • Package • Low ON resistance • Low-noise characteristics • Code


    Original     		PDF 2002/95/EC) 2SK1103 2SJ0163

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET M Di ain sc te on na tin nc ue e/ d For switching circuits Complementary to 2SK1103 • Package ■ Features


    Original     		PDF 2002/95/EC) 2SJ0163 2SJ163) 2SK1103

    Untitled

    Abstract: No abstract text available
    Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm 0.40+0.10 –0.05 0.16+0.10 –0.06 Unit VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation


    Original     		PDF 2SJ0163 2SJ163) 2SK1103 O-236 SC-59

    2SJ0163

    Abstract: 2SK1103
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SK1103 Silicon N-channel junction FET M Di ain sc te on na tin nc ue e/ d For switching circuits Complementary to 2SJ0163 • Package • Low ON resistance


    Original     		PDF 2002/95/EC) 2SK1103 2SJ0163 2SJ0163 2SK1103

    2SJ0163

    Abstract: 2SJ163 2SK1103
    Text: Silicon Junction FETs Small Signal 2SK1103 Silicon N-Channel Junction FET For switching Complementary to 2SJ0163 (2SJ163) Unit: mm 0.40+0.10 –0.05 • Features 0.16+0.10 –0.06 1.9±0.1 Unit VGDS −65 V Drain current ID 20 mA Gate current IG 10 mA Allowable power dissipation


    Original     		PDF 2SK1103 2SJ0163 2SJ163) 2SJ0163 2SJ163 2SK1103

    2SJ0163

    Abstract: 2SJ163 2SK1103
    Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-channel junction FET Unit: mm For switching circuits Complementary to 2SK1103 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 • Absolute Maximum Ratings Ta = 25°C 2.90+0.20 –0.05


    Original     		PDF 2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103

    Junction-FET

    Abstract: 2SJ0163 2SJ163 2SK1103
    Text: Silicon Junction FETs Small Signal 2SJ0163 (2SJ163) Silicon P-Channel Junction FET For general switching Complementary to 2SK1103 unit: mm +0.2 2.8 –0.3 +0.25 0.65±0.15 1.5 –0.05 0.65±0.15 +0.1 0.4 –0.05 3 V Drain current ID −20 mA Gate current


    Original     		PDF 2SJ0163 2SJ163) 2SK1103 Junction-FET 2SJ0163 2SJ163 2SK1103

    2SJ0163

    Abstract: 2SJ163 2SK1103
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon Junction FETs (Small Signal) 2SJ0163 (2SJ163) Silicon P-channel junction FET For switching circuits Complementary to 2SK1103 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b


    Original     		PDF 2002/95/EC) 2SJ0163 2SJ163) 2SK1103 2SJ0163 2SJ163 2SK1103