TCH-80
Abstract: CTU100 2SK1019
Text: 2SK1019 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-3PL ø3.2 ±0.2 5 ±0.3 3 ±0.2 2 ±0.2 1.1 ±0.2 Applications
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2SK1019
TCH-80
CTU100
2SK1019
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Untitled
Abstract: No abstract text available
Text: 2SK1019 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- II SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High voltage VGSS=±30V Guarantee TO-3PL ø3.2 ±0.2 5 ±0.3 3 ±0.2 2 ±0.2 1.1 ±0.2 Applications
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2SK1019
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Untitled
Abstract: No abstract text available
Text: 2SK1019 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)450 V(BR)GSS (V) I(D) Max. (A)35 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)
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2SK1019
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2SK1045
Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
Text: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100
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2SC642A
O-204AA/TO-3:
2SC643
2N4030DIE
2C4030
2SC643A
2SK1045
2SK1048
2SK1050
2SK1044
2SD2791
2SK1011
2sd2498
2SD299
2SD300
2SD373
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2SK1019
Abstract: mosfet 2sk
Text: 2SK1019 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features R|ES j j lOutline Drawings • High speed switching • Lew on-resistance • No secondary breakdown • Lew driving power • High voltage • V c s s ~ ± 3 0 V Guarantee ■Applications
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OCR Scan
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PDF
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2SK1019
Tc-25Â
2SK1019
mosfet 2sk
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H1h fet
Abstract: TEA 1019 2SK1019 2sk 30A MOSFET Diode LT 450
Text: 2SK1019 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET p • Features R|ES j j lOutline Drawings • High speed switching • Lew on-resistance • No secondary breakdown • Lew driving power • High voltage • V c s s ~ ± 3 0 V Guarantee ■Applications
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OCR Scan
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PDF
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2SK1019
Tc-25Â
H1h fet
TEA 1019
2SK1019
2sk 30A MOSFET
Diode LT 450
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atic 106
Abstract: No abstract text available
Text: 2SK1019 FUJI POWER M OS-FET N -C H A N N E L S IL IC O N P O W E R M O S - F E T p 3 • Features B O u tlin e Draw ings j j E R I E S • High speed sw itching • Lew on-resistance • No secondary breakdown • Low driving pow er • High voltage • V CSS= ± 3 0 V Guarantee
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OCR Scan
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PDF
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2SK1019
atic 106
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m7 MOSFET
Abstract: 2SK1019 CW100-1
Text: 2SK1019 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-II •Features SERIES lOutline Drawings 'H igh speed sw itching • Lew on-resistance 'N o secondary breakdown • Lew driving power ' High voltage 'V c s s ~ ± 3 0 V Guarantee ■Applications ►
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OCR Scan
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PDF
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2SK1019
m7 MOSFET
2SK1019
CW100-1
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2SK955
Abstract: 2SK906A 2SK1134 2SK899 2SK900 2SK2001 2SK1660 2SK725 2SK2000A 2SK905
Text: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 V olts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A
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OCR Scan
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DDDlfl70
2SK1134
T03PF
2SK905
2SK905A
2SK2000A
2SK906
2SK906A
2SK900
2SK955
2SK899
2SK2001
2SK1660
2SK725
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2SK1171
Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Text: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn
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OCR Scan
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PDF
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001SS7
25-35kg
2SK1171
900 v 9 amp mosfet
2SK1015
2SK726
2SK1511
2SK1222
j545
2SK1018
2SK9
2SK151
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2SK100
Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Text: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:
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OCR Scan
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T0-220
T0-220F15
2SJ472-01L
2SJ314-01L
2SJ473-01L
2SK2248-01L
2SK1942-01
2SK2770-01
2SK2528-01
2SK1944-01
2SK100
2SK2765
2SK2029-01LS
2sk1936
2SK1940
2sk2761
2SK196
2SK2082
2SK1082
2SK182
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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2SK056
Abstract: No abstract text available
Text: MOSFETs F-l Series - Low Rds ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947M R 2SK901 i;-: tJdiruAin RSBr V dss (V ) MA) P d (W ) Qss(pt) Coss(pf) ton (ns) toff (ns) 50 100 250 250 250 45 32 12 12 20 125 125 80 40 125 0.03 0.06 0.30 0.30 0.15 3000
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2SK905
2SK906
2SK900
2SK947M
2SK901
2SK950
2SK724
2SK725
2SK899
2SK897M
2SK056
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2sk1005
Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
Text: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn
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OCR Scan
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PDF
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001SS7
CT03P
t-39-13
2MI50F-050
2MI50S-050
2MI100F-025
2MI100F-050
2MI200F-025
6MI15FS-050
6MI20FS-025
2sk1005
T0-220F
T0220F
2sk1010
2SK1011
2sk1217
2SK1105
2SK956
2SK1084
2sk1101
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2SK725A
Abstract: 2SK903 2SK1018 2SK1010 T0220F 2SK956 2SK953
Text: COLLMER SEMICONDUCTOR INC 22307^2 ÜÜD1S7Ô 1S3 HfiE D ICOL <§ MOSFETS F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099 2SK725 2SK899
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OCR Scan
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PDF
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2SK905
2SK1134
2SK905A
2SK906
2SK906A
2SK900
2SK947
2SK948
2SK901
2SK902
2SK725A
2SK903
2SK1018
2SK1010
T0220F
2SK956
2SK953
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2SK2079
Abstract: 2SK2079-01M
Text: S MOSFETs F-l Series Low Rds (ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947M 2SK901 2SK1549 2SK902 2SK949M 2SK950 2SK724 2SK725 2SK899 2SK897M 2SK903M 2SK904 2SK1105 2SK1663 2SK1384 2SK955 2SK960M 2SK961 Maximum Ratinas Id (A) V dss (V) Pd (W)
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OCR Scan
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PDF
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2SK905
2SK906
2SK900
2SK947M
2SK901
2SK1549
2SK902
2SK949M
2SK950
2SK724
2SK2079
2SK2079-01M
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2SK1212
Abstract: 2sk904 replacement
Text: <5 MOSFETs F-l Series - Low R d s ON 50 - 900 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK902 2SK949MR 2SK950 2SK724 *2SK725 2SK899 2SK897MR '2SK903MR *2SK904 •2SK1105R *2SK1663L,S •2SK1384R •2SK955 2SK960MR 2SK961 Maximum Ratinas
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OCR Scan
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PDF
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2SK905
2SK906
2SK900
2SK947MR
2SK901
2SK1549R
2SK902
2SK949MR
2SK950
2SK724
2SK1212
2sk904 replacement
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2SK2652
Abstract: 2SK2771-01R
Text: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT
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OCR Scan
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PDF
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F8006N
F7007N
2SJ472-01L
T0-220
2SJ314-01L
2SJ473-01L
2SJ474-01L
2SJ476-01L
2SK2760-01R
2SK2148-01R
2SK2652
2SK2771-01R
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2SK725
Abstract: 2sk899 2SK960 90-340 K949 2SK900 2SK903MR k902 k952 2SK1549R
Text: <S MOSFETs F-l Series - Low R d s ON 50 - 800 Volts Device Type 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1549R 2SK9Ò2 2SK949MR 2SK950 2SK724 2SK725 2SK899 2SK897MR 2SK903MR 2SK904 2SK1105R 2SK1663L.S 2ÔK1384R 2SK955 2SK960MR 2SK961 Miaximum Ratifias V dss (V)
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OCR Scan
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PDF
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2SK905
2SK906
2SK900
T0-220
2SK947MR
T0-220F15
2SK901
2SK1549R
K949MR
O-220F15
2SK725
2sk899
2SK960
90-340
K949
2SK903MR
k902
k952
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2SK1134
Abstract: 2SK2000A 2SK900 2SK905 2SK905A 2SK906 2SK906A 2SK947M
Text: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 Volts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A
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OCR Scan
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PDF
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DDDlfl70
2SK1134
T03PF
2SK905
2SK905A
2SK2000A
2SK906
2SK906A
2SK900
2SK947M
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T03P
Abstract: 2SK101
Text: COLLNER SE MICONDUCTOR INC b3E D • 22307^2 00D1A70 b05 « C O L <§ MOSFETs F-l Series Low R d s ON 50-900 Volts Device TvDe 2SK1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1549 2SK902 2SK901A 2SK902A 2SK949M 2SK950 2SK723
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OCR Scan
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PDF
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00D1A70
2SK1134
2SK905
2SK905A
2SK2000A
2SK906
2SK906A
2SK900
2SK947M
2SK948
T03P
2SK101
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2SK956
Abstract: 2sk1005 2SK947 2SK1015 2SK948 436s 2SK906A 0 280 130 055 2SK726 2SK900
Text: COLLMER S E M I C O N D U C T O R INC SEBûT'iS ÜÜD1S 7Ô 153 4ñE » MOSFETS ICOL <§ 13 F-l SERIES LOW RDS (on Device Type 2SK905 2SK1134 2SK905A 2SK906 2SK906A 2SK900 2SK947 2SK948 2SK901 2SK902 2SK901A 2SK902A 2SK949 2SK950 2SK723 2SK859 2SK724 2SK1099
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OCR Scan
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PDF
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D1S70
2SK905
2SK1134
T03PF
2SK905A
2SK906
2SK906A
2SK900
T0220
2SK947
2SK956
2sk1005
2SK1015
2SK948
436s
0 280 130 055
2SK726
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sk1212
Abstract: 2SK1549R 2SK724 2SK900 2SK901 2SK905 2SK906 2SK947MR 2SK950
Text: <S MOSFETs F-l Series - Low R d s ON 50 - 800 Volts Miiximum Ralinas Device Type V dss (V) 2SK905 2SK906 2SK900 2SK947MR 2SK901 2SK1540ft 2ÔK902 2SK949MR 2SK950 2SK724 2SK725 2SK899 2SK897MR 2SK903MR 2SK904 2SK1105R 2SK1663L.S 2ÔK1384R 2'3K055 2SK960MR
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OCR Scan
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PDF
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2SK905
2SK906
2SK900
T0-220
2SK947MR
T0-220F15
2SK901
2SK1549R
K949MR
O-220F15
sk1212
2SK724
2SK950
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2SK955
Abstract: 2SK906A 2SK900 2SK1134 2SK725A 2SK899 2SK2000A 2SK905 2SK905A 2SK906
Text: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 V olts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A
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OCR Scan
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PDF
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DDDlfl70
2SK1134
T03PF
2SK905
2SK905A
2SK2000A
2SK906
2SK906A
2SK900
2SK955
2SK725A
2SK899
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