fa 5571
Abstract: No abstract text available
Text: s G S-THOnSON 0 7C D | 5571 4 I ' 7 ^5 3 7 H S -U M O S " ¡ U V M54HG257/25fl | V \ \ j M74HC257/25|j - INTEGRATED C IRCUITS 67C 1 3 8 1 2 D PRELIMINARY DATA M54/74HC257 QUAD 2-CHANNEL MULTIPLEXER (3-STATE M54/74HC258 QUAD 2-CHANNEL
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M54HG257/25fl
M74HC257/25
--------------------------------------67C
M54/74HC257
M54/74HC258
HC258
fa 5571
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transistor T43
Abstract: No abstract text available
Text: PIC17C4X M ic r o c h ip High-Performance 8-Bit CMOS EPROM/ROM Microcontroller Pin Diagram Devices included in this data sheet: • PIC17CR42 PDIP, CERDIP, Windowed CERDIP Vdd-C 1 RC0/AD0 -C 2 • PIC17C42A • PIC17C43 RC1/AD1 RC2/AD2 RC3/AD3 *• • PIC17CR43
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PIC17C4X
PIC17CR42
PIC17C42A
PIC17C43
PIC17CR43
PIC17C44
PIC17C42
PIC17C42A)
RB4H-CLK12
bl03E01
transistor T43
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1S274
Abstract: RZ3135B50W
Text: N AUER PHILIPS/DISCRETE ^ 53=131 0015273 ObE D c RZ3135B50W T - 3 5 - »3 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier with a frequency range o f 3,1 to 3,5 GHz.
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RZ3135B50W
LbS3T31
RZ3135B50W
1S274
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bbS3T31 0015273 0 ObE » RZ3135B50W T -33-13 PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power amplifier w ith a frequency range o f 3,1 to 3,5 GHz.
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bbS3T31
RZ3135B50W
33-ia.
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la 8265
Abstract: Z/la 8265
Text: SSI 33P3733A M ic o n M k m S 8-26.5 Mbit/s Read Channel w/Pit Mark Pulse Qualifier ' A TDK Group/Company February 1996 Wide bandwidth, high p recision full-wave rectifier DESCRIPTION The SSI 33P3733A device is a high performance BiCMOS single chip read channel 1C that contains all
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33P3733A
33P3733A
64-Lead
33P3733A-CGT
33P3733A-CGT
02/16/96-rev.
0015t
la 8265
Z/la 8265
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m37702e2
Abstract: No abstract text available
Text: b S M T flS a D D 15S5D O f ll • M I T ‘4 MITSUBISHI MICROCOMPUTERS M 3 7 7 0 2 E 2 -X X X F P ,M 3 7 7 0 2 E 2 A X X X F P ,M 3 7 7 0 2 E 2 B X X X F P M 3 7 7 0 2 E 2 F S ,M 3 7 7 0 2 E 2 A F S ,M 3 7 7 0 2 E 2 B F S PROM VER SIO N of M 3 7 7 0 2 M 2 -X X X F P .M 3 7 7 0 2 M 2 A X X X F P .M 3 7 7 0 2 M 2 B X X X F P
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15S5D
M37702E2-XXXFP,
M37702E2AXXXFP
M37702E2BXXXFP
M3770
1S17T
64P4B
64pin
750mil
80pin
m37702e2
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Untitled
Abstract: No abstract text available
Text: SSI 32R2103R/04R/05R M m J y s lm . 8/10 Channel Thin Film Read/Write Devices A Texas Instruments Company June 1996 DESCRIPTION FEATURES The SSI 32R2103R/04R/05R are BiCMOS monolithic integrated circuits designed for use with two-terminal recording heads. They provide a low noise read
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32R2103R/04R/05R
32R2103R/04R/05R
32R2103R/04R/05Roption
32R2103/04/05
32R2103W-8CGT.
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M74ALS580
Abstract: No abstract text available
Text: MI T S U B I S H I iDGTL LOGIC} TI DE | bEMTflS? 00 15S 74 '~J^*/Ci,-'ô7’O S - ^ 7 | M ITSUBISHI A L ST T Ls M74ALS563AP „ .••s s -""' OCTAL D -TY P E TR A N SPA R EN T LATCH V» IT H 3 -S T A T E O U TP U T IN V E R T E D W ^oVC „-'3^ •_
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M74ALS563AP
M74ALS563AP
16P2P
16-PIN
150mil
T-90-20
20P2V
300mil
M74ALS580
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