C4681
Abstract: 7B1A 2SA1802 2SC4681
Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)
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2SC4681
2SA1802
C4681
7B1A
2SA1802
2SC4681
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Untitled
Abstract: No abstract text available
Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)
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2SC4681
2SA1802
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Untitled
Abstract: No abstract text available
Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)
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2SC4681
2SA1802
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7B1A
Abstract: 2SA1802 2SC4681 C4681
Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)
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2SC4681
2SA1802
7B1A
2SA1802
2SC4681
C4681
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Untitled
Abstract: No abstract text available
Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)
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2SC4681
2SA1802
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Untitled
Abstract: No abstract text available
Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)
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2SC4681
2SA1802
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Untitled
Abstract: No abstract text available
Text: 2SC4681 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC4681 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = 2 V, IC = 0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = 2 V, IC = 3 A)
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2SC4681
2SA1802
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2SC4793 2sa1837
Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y
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2SA2058
2SA1160
2SC2500
2SA1430
2SC3670
2SA1314
2SC2982
2SC5755
2SA2066
2SC5785
2SC4793 2sa1837
2sC5200, 2SA1943, 2sc5198
2sC5200, 2SA1943
transistor
2SA2060
power transistor npn to-220
2sc5198 equivalent
transistor 2SC5359
2SC5171 transistor equivalent
NPN Transistor
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ESM 740
Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.
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SCE0003A
ESM 740
transistor SMD t04 51
D245A
LM2804
transistor SMD t04
Solar Garden Light Controller 4 pin
2fu smd transistor
transistor t04 smd
pnp Octal Darlington Transistor Arrays DIP
WB126
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Untitled
Abstract: No abstract text available
Text: 2SA1802 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1802 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm Excellent hFE linearity : hFE 1 = 200 to 600 (VCE = −2 V, IC = −0.5 A) : hFE (2) = 140 (min), 200 (typ.) (VCE = −2 V, IC = −3 A)
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2SA1802
2SC4681
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2SA1802
Abstract: 2SC4681
Text: T O S H IB A 2SC4681 2SC4681 TO SHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • Excellent hjpg Linearity : hFE 1 = 200-600 (Vce = 2 V, IC = 0.5 A) : hFE (2) = 140 (Min.) (VCE = 2 V, Ic = 3 A)
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2SC4681
2SA1802
2SA1802
2SC4681
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2SA1802
Abstract: 2SC4681
Text: T O S H IB A 2SC4681 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4681 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS A 6.8MAX., • • • • Excellent hpg Linearity : hFE (1) = 200-600 (Vc e = 2 V, In = 0.5 A) : hFE (2) = 140 (Min.) (VCE = 2V,~IC = 3 A)
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2SC4681
2SA1802
2SA1802
2SC4681
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4681 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4681 Unit in mm STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. • E x c e lle n t h p g L in e a r i t y ' hFE 1 = 200—600 (Vce = 2V, Ic = 0.5A) : hFE (2) —140 (Min.) (VCE = 2V, IC = SA)
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2SC4681
2SA1802
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05ah
Abstract: No abstract text available
Text: 2SC4681 SILICON NPN EPITAXIAL TYPE STROBF FLASH APPLICATIONS. MFOIUM POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES: • Excellent h p E Linearity : h F E f l v=200~600 Vc e =2V, Ic =0.5A : h p E (2 )“140 (Min.) (VCE=2V, IC=3A) • L o w Collector Saturation Voltage
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2SC4681
2SA1802
05ah
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2SA1802
Abstract: 2SC4681
Text: T O S H IB A 2SC4681 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC4681 MEDIUM POWER AMPLIFIER APPLICATIONS • • • • E x cellen t hFE L inearity : hFE 1 = 2 0 0 - 6 0 0 (V c e = 2 V , I c = 0.5 A) : h pE (2) = 140 (M in.) (V q e = 2 V , I c = 3 A)
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2SC4681
2SA1802
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2SC468
Abstract: 2SA1802 2SC4681
Text: T O S H IB A 2SC4681 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC4681 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS A 6.8MAX., 0.6MAX. 5.2 ±0.2 • • • • Excellent hjpg Linearity : hFE (1) = 200-600 (Vc e = 2 V, Ic = 0.5 A)
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2SC4681
2SA1802
2SC468
2SA1802
2SC4681
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A1241
Abstract: c4684 2_s transistors c3072 B834 SA1357 c4793
Text: S urface Mo unt Device 4 Power Mold Transistors (D PACK) E lectrical C h a ra cte ristics {T a= 2 5°C ) A p plication T yp e No. VCEO (V) Ic (A) Pc (W ) Pc* (W ) Tj (°C) C o m plem en tary 2 S A 1225 D rive r stage. Pow er am plification. -160 -1.5 1.0
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A1241
2SD1221
2SC4681
2SC4685
c4684
2_s transistors
c3072
B834
SA1357
c4793
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Untitled
Abstract: No abstract text available
Text: 2SA1802 TO SH IBA TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE 2 S A 1 802 Unit in mm A MEDIUM POWER AMPLIFIER APPLICATIONS 6.8MAX., < 0.6M AX. -tf- 5.2 ±0 .2 rll • Excellent hjpg Linearity • h -n n • * * rH i • •
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2SA1802
2SC4681
95IV1AX.
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2SA1802
Abstract: 2SC4681 A1802
Text: 2SA1802 TO SH IBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 802 Unit in mm STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS • • • • Excellent hpE Linearity : hFE l = 200-600 (Vc e = -2 V , Ic = -0 .5 A) : hFE(2) - 140 (Min.) (Vc e = -2 V , Iq = - 3 A)
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2SA1802
2SC4681
2SA1802
A1802
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SA1802 TENTATIVE TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 802 STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. U nit in mm & 8 MAX. • Excellent h p g Linearity : h pE l = 200"-600 (V c e = —2V, I(j = —0.5A)
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2SA1802
--60mA)
2SC4681
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15J102
Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811
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2SA949U50VI
2AC2229
2SA1145U50V)
2SC2705(
2SC2230
2SA817A
2SC1627A
2SA1811
2SC4707
2SA965
15J102
Transistor 2SC4288A
Transistor 2SA 2SB 2SC 2SD
Drive IC 2SC3346
2sa 102 transistor
transistor 2SA 101
50J301
02SC5030
T15J103
Driver IC 2SC3346
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2sC5200, 2SA1943, 2sc5198
Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428
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2SA817A
2SA940
2SA949
2SA965
2SA966
2SA1012
2SA1013
2SA1020
2SA1145
2SA1160
2sC5200, 2SA1943, 2sc5198
GTI5Q101
2sc5039
2SC4532
2SD2088
2SC3303
2sC5200, 2SA1943
2SA1803
2sc4408
GT10G102
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7B1A
Abstract: 2SA1802 2SC4681 A1802
Text: 2SA1802 TO SHIBA TENTATIVE 2 S A 1 802 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE Unit in mm STROBE FLASH APPLICATIONS. M E D IU M POWER AMPLIFIER APPLICATIONS. • a 8 MAX. Excellent hEE Linearity : hFE 1 = 200-600(VCE= -2 V , Ic = -0.5A) : hFE(2) = 140 (Min.) (VCE = -2 V , IC= -3 A )
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2SA1802
2SC4681
7B1A
2SA1802
A1802
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SA1802 2 S A 1 802 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE STROBE FLASH APPLICATIONS M E D IU M POWER AMPLIFIER APPLICATIONS • Excellent hjpg Linearity : hFE i = 200-600 (Vc e = -2 V , Ic = -0 .5 A) : hFE (2) = 140 (Min.) (VCE = -2 V , IC = -3 A )
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2SA1802
2SC4681
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