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    2SA1426 Search Results

    2SA1426 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1426 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: MSTM; Number Of Pins: 3; Viewing Angle: radial taping; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SC3666 Original PDF
    2SA1426 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1426 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1426 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1426 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1426 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1426 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1426 Toshiba Silicon PNP transistor for audio power amplifier applications Scan PDF
    2SA1426 Toshiba PNP transistor Scan PDF
    2SA1426-O Toshiba 2SA1426 - TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7D101A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1426-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1426O Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF
    2SA1426-Y Toshiba 2SA1426 - TRANSISTOR 800 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, 2-7D101A, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SA1426-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1426Y Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF

    2SA1426 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    a1426

    Abstract: 2-7D101A 2SA1426 2SC3666 DSAE002593
    Text: 2SA1426 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1426 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • B 級ブッシュブルで 1 W の出力が得られます。 •


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    PDF 2SA1426 2SC3666 2-7D101A 20070701-JA a1426 2-7D101A 2SA1426 2SC3666 DSAE002593

    2-7D101A

    Abstract: 2SA1426 2SC3666 A1426 v30010
    Text: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SA1426 2SC3666. 2-7D101A 2SA1426 2SC3666 A1426 v30010

    A1426

    Abstract: A-1426 2-7D101A 2SA1426 2SC3666 A1426-1/6
    Text: 2SA1426 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1426 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • B 級ブッシュブルで 1 W の出力が得られます。 •


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    PDF 2SA1426 2SC3666 2-7D101A A1426 A-1426 2-7D101A 2SA1426 2SC3666 A1426-1/6

    2-7D101A

    Abstract: 2SA1426 2SC3666 A1426
    Text: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SA1426 2SC3666. 2-7D101A 2SA1426 2SC3666 A1426

    Untitled

    Abstract: No abstract text available
    Text: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    PDF 2SA1426 2SC3666. 2-7D101A

    a1426

    Abstract: V30010 2-7D101A 2SA1426 2SC3666
    Text: 2SA1426 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1426 Audio Power Amplifier Applications • High hFE: hFE = 100 to 320 • 1-W output applications • Complementary to 2SC3666. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol


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    PDF 2SA1426 2SC3666. a1426 V30010 2-7D101A 2SA1426 2SC3666

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


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    PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


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    PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    Untitled

    Abstract: No abstract text available
    Text: 2SA1426 TOSHIBA 2SA1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : hjrE = 100~320 IW Output Applications. Complementary to 2SC3666. 7 .1 MAX MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SA1426 2SC3666.

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


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    PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2-7D101A

    Abstract: 2SA1426 2SC3666
    Text: TOSHIBA 2SA1426 2 S A1 426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hpE : h]?E —100~320 IW Output Applications. Complementary to 2SC3666. 7.1 MAX 2.7MAX M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SA1426 2SC3666. 2-7D101A 2SA1426 2SC3666

    2-7D101A

    Abstract: 2SA1426 2SC3666
    Text: TO SH IBA 2SA1426 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA 1426 U n it in mm A U D IO POWER AMPLIFIER APPLICATIONS. • H igh hjPE : hjrjj = 1 0 0 ~ 3 2 0 • IW O utput A pplications. • 7 .1 MAX 2.7 MAX C om plem entary to 2SC 3666.


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    PDF 2SA1426 2SC3666. 2-7D101A 2-7D101A 2SA1426 2SC3666

    Untitled

    Abstract: No abstract text available
    Text: 2SA1426 T O SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 426 Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS. • • • High hp g : hpE = 100—320 1W Output Applications. Complementary to 2SC3666. 7,1 m a x S. 7 MAS MAXIMUM RATINGS (Ta = 25°C)


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    PDF 2SA1426 2SC3666.

    Untitled

    Abstract: No abstract text available
    Text: 2SA1426 TO SH IBA 2SA 1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • High hpE • hpE - 100~320 1 W Output Applications. Complementary to 2SC3666. MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SA1426 2SC3666.

    2-7D101A

    Abstract: 2SA1426 2SC3666
    Text: 2SA1426 TO SH IBA 2SA 1426 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • • High hpE • hpE - 100~320 1 W Output Applications. Complementary to 2SC3666. MAXIMUM RATINGS (Ta = 25°C) SYMBOL


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    PDF 2SA1426 SA142 2SC3666. 2-7D101A 2-7D101A 2SA1426 2SC3666

    2SB536A

    Abstract: 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431
    Text: - 2SB 2SB 2SB 2SB 2SB 1321 ^ 1322 ^ 1323 1324 ^ 2SB 2SB 2SB 2SB 2SB 2SB 2SB 1326 1328 1329 , 1330 * 1331 1332 1333 / 2SB 2SB 2SB 2SB 2SB 2SB 1336 1337 1338 1339 1340 1341 *• 2SB 1345 2SB 1346 2SB 1347 SANYO B M TOSHIBA NEC ÏL HITACHI * ± a FUJITSU fâ


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    PDF 2SB13n7M 2SA1782 2SB1320A 2SA1561 2SA1703 2SA1426 2SA1559 2SB1242 2SB536A 2SA1301 TOSHIBA 2SB1320A 2SA1356 2SB1318 2SA1624 2SB1242 2sa1133 2SA1426 2SA1431

    2SA1015

    Abstract: 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A
    Text: - 34 - m s Type No. £ M a n u f. 2SA 1535 , tö T 2SA 1535A tö T = * SANYO 2SB1037 X 3E TOSHIBA B 'S NEC 1 Tn« B tL HITACHI H ± il FUJITSU tö T MATSUSHITA — M MITSUBISHI 2SB649A = 2SA 1542 □—A 2SA 1543 □— A 2SA1015 2SB642 2SA 1544 b m. 2SA1624


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    PDF 2SB1037 2SB649A 2SB1186A 2SA1306A 2SB1186B 2SB548 2SB1314 2SA1783 2SA1015 2SA733 2SA1091 2SA1371 2SA562TM 2SB548 2SB814 2SA1243 2SB642 2SB793 2SA1306A

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


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    PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2S897

    Abstract: 2SA1178 2SA1225 2SA1371 2SA1243 2SA1628 2SA1586 2SA879 2SA1770 2SA1283
    Text: 66 - m % tt T y p e No. 2 SB 1216 ^ ^ 2SB 1218 ^ 2SB 1218A a * 85 T fö T tö T 2SB 1219A fö 2SB 1220 ta 2SB 1219 V- 2SB 1222 2S8 1223 f 2SB 1224 2SB 1225 J 2SB 1226 ^ ±L 2SA1622 2SA1586 m ± m FU JITSU iß T MATSUS H I T A 2SB1218A 2 S A1576 2 S A 16 0 3


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    PDF 2SA1647 2SB930A 2SB986 2SA1359 2SA1096 2SB1065 2SA1622 2SA1586 2SA1628 2SB1218A 2S897 2SA1178 2SA1225 2SA1371 2SA1243 2SA1628 2SA1586 2SA879 2SA1770 2SA1283