Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SB631 Search Results

    SF Impression Pixel

    2SB631 Price and Stock

    Rochester Electronics LLC 2SB631E

    SMALL SIGNAL BIPOLAR TRANS PNP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB631E Bulk 1,110
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.27
    		Buy Now

    Rochester Electronics LLC 2SB631KF

    PNP SILICON TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB631KF Bulk 1,110
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.27
    		Buy Now

    SANYO Semiconductor Co Ltd 2SB631KF

    2SB631KF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SB631KF 16,088 1,358
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.2763
    		Buy Now
    Rochester Electronics 2SB631KF 16,088 1
    • 1 $0.26
    • 10 $0.26
    • 100 $0.2444
    • 1000 $0.221
    • 10000 $0.221
    		Buy Now

    Aptina Imaging 2SB631E

    Trans GP BJT PNP 100V 1A 1000mW 3-Pin TO-126
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SB631E 10,653 1,358
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.2763
    		Buy Now

    Aptina Imaging 2SB631KF

    Trans GP BJT PNP 120V 1A 1000mW 3-Pin TO-126
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2SB631KF 6,498 1,358
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.2763
    		Buy Now
    Find more 2SB631 price and stock on Findchips.com

    2SB631 Datasheets (36)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB631 Sanyo Semiconductor Low-frequency power amplifier, medium-speed switch Original PDF
    2SB631 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB631 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB631 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB631 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB631 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB631 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB631 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB631 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB631 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB631 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB631 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB631 Unknown Transistor Replacements Scan PDF
    2SB631 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB631 Unknown Cross Reference Datasheet Scan PDF
    2SB631 Sanyo Semiconductor PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Scan PDF
    2SB631 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF
    2SB631D Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB631E Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB631E Sanyo Semiconductor 100V/120V, 1A Low Frequency Power Amp Scan PDF

    2SB631 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB631

    Abstract: 2SB631K
    Text: JMnic Product Specification 2SB631 2SB631K Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD600/K ・High breakdown voltage VCEO:-100/-120V ・High current: -1A ・Low saturation voltage,excellent hFE linearity


    Original     		PDF 2SB631 2SB631K O-126 2SD600/K -100/-120V 2SB631 -50mA 2SB631K

    2SB631K

    Abstract: 2sb631* transistor Spice Parameter, 2N, Bipolar Transistor MJE-360 nc 555 2SB631K-SPICE
    Text: 2SB631K SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 195.0f NF 1 IKF 555.0m NE 2 NR 1 IKR 75.00m NC 2 IRB 20.00m RE 127.0m XTB XTI 3 VJE 700.0m TF 2n VTF 10 PTF VJC 550.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm


    Original     		PDF 2SB631K 2SB631K 2sb631* transistor Spice Parameter, 2N, Bipolar Transistor MJE-360 nc 555 2SB631K-SPICE

    transistor D600k

    Abstract: transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor 2SB631 transistor B631K k b631k
    Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		PDF ENN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 transistor D600k transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor transistor B631K k b631k

    2sb631 transistor

    Abstract: 2sd600* transistor 2SB631 2SD600 high gain low voltage PNP transistor transistor 2sb631 transistor PNP 10A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB631 DESCRIPTION •High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD600


    Original     		PDF 2SB631 -100V 2SD600 -50mA -500mA 2sb631 transistor 2sd600* transistor 2SB631 2SD600 high gain low voltage PNP transistor transistor 2sb631 transistor PNP 10A

    2SB631K

    Abstract: 2SD600K
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB631K DESCRIPTION •High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD600K


    Original     		PDF 2SB631K -120V 2SD600K -500mA; -50mA -500mA 2SB631K 2SD600K

    2sb631

    Abstract: 2sb631k
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION •With TO-126 package ·Complement to type 2SD600/K ·High breakdown voltage VCEO:-100/-120V ·High current: -1A ·Low saturation voltage,excellent hFE linearity


    Original     		PDF 2SB631 2SB631K O-126 2SD600/K -100/-120V 2SB631 -50mA 2sb631k

    2SB631K

    Abstract: D 600K
    Text: Ordering number : ENN346G 2SB631, 631K/ 2SD600, 600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		PDF ENN346G 2SB631, 631K/ 2SD600, 00V/120V, 100/120V, 2009B 631K/2SD600, O-126 2SB631K D 600K

    transistor D600k

    Abstract: transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K 2SB631 D600
    Text: Ordering number:346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		PDF 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 transistor D600k transistor d600 transistor b631 D600k transistor transistor B631K D600K b631 transistor B631K D600

    2sb631 transistor

    Abstract: transistor b631 transistor D600k 2sb631 2sd600
    Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


    Original     		PDF ENN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 2sb631 transistor transistor b631 transistor D600k 2sd600

    D600K

    Abstract: 631k B631K 2SD600 D600K to 126 2SB631 2SB631K N346G TO-126 D600 D600
    Text: 注文コード No. N 3 4 6 G 2SB631, 631K / 2SD600, 600K N346G 41400 半導体ニューズ No.346E（’ 91 大信号トランジスタ D.B.Vol.1 No.346F）とさしかえてください。 2SB631, 631K 2SD600, 600K 特長 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ


    Original     		PDF 2SB631, 2SD600, N346G 2SB631K, D600K B631K, D600K 631k B631K 2SD600 D600K to 126 2SB631 2SB631K N346G TO-126 D600 D600

    2SD600

    Abstract: 2sd600* transistor hFE is transistor 2sd600 transistor 2SB631 2sb631 transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD600 DESCRIPTION •High Collector Current-IC= 1.0A ·High Collector-Emitter Breakdown Voltage: V BR CEO= 100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SB631


    Original     		PDF 2SD600 2SB631 500mA 2SD600 2sd600* transistor hFE is transistor 2sd600 transistor 2SB631 2sb631 transistor

    2SD600

    Abstract: 2sd600k
    Text: Inchange Semiconductor Product Specification 2SD600 2SD600K Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier


    Original     		PDF 2SD600 2SD600K O-126 2SB631/631K VCEO100/120V 2SD600 500mA 2sd600k

    2SB631

    Abstract: 2SB631K
    Text: Inchange Semiconductor Product Specification 2SB631 2SB631K Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD600/K ・High breakdown voltage VCEO:-100/-120V ・High current: -1A ・Low saturation voltage,excellent hFE linearity


    Original     		PDF 2SB631 2SB631K O-126 2SD600/K -100/-120V 2SB631 -500mA -50mA 2SB631K

    2SD600

    Abstract: 2SD600K 2sd_600 to126 2sd600k
    Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD600 2SD600K DESCRIPTION •With TO-126 package ·Complement to type 2SB631/631K ·High breakdown voltage VCEO100/120V ·High current 1A ·Low saturation voltage APPLICATIONS ·For low-frequency power amplifier


    Original     		PDF 2SD600 2SD600K O-126 2SB631/631K VCEO100/120V 2SD600 500mA 2SD600K 2sd_600 to126 2sd600k

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SD588

    Abstract: 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586
    Text: Absolutes maximum ratings Ta=25ºC DC Current Gain fab/ft* Cob ºñ°í hFE VCE Ic (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 30W 2000-5A 150 -2 -3A 2SD560 (Tc=25ºC) 15000 -500 800 175 >50 -5 -100 30W -4A 150 120 -5 -500 (Tc=25ºC) -700 800 150 200 -1 -100 120*


    Original     		PDF 000-5A 2SD560 2SD571 15kHz 2SD586 2SD718 2SD726 2SD727 2SD728 2SD731 2SD588 2SB651 2SB669A 2SB618A 2SB641 2SB615 2Sb669 2SD588A 2SB618 2SB616 2SD586

    2N3633

    Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M


    Original     		PDF

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    2SB641 r

    Abstract: 2sb641 2SD659 2SD689 2SB603 2sb678 2SB647B 2SB646A 2SB646 2SB686
    Text: - 56 - Ta=25‘ C , * E P f i T c = 2 5 eC m £ % 2SB603 B M HV LS SW 2SB605 B M V cB O VcEO (V) (V) ic (D O (A) -500 -500 -0. 5 L F PA -60 -50 -0. 7 LF A -30 -2 5 -1 LF A -60 -5 0 -1 2SB624 fö T B iS LF A -30 -25 2SB631 H # IF PA/MS SW -100 2SB631K H #


    OCR Scan     		PDF 2SB603 2SB605 2SB621 2SB621A 2SB624 2SB631 -0B648 2SD668A O-126) 2SB648A 2SB641 r 2sb641 2SD659 2SD689 2sb678 2SB647B 2SB646A 2SB646 2SB686

    D600K

    Abstract: B631k b631 k b631k D600K to 126 2SB631 TO-126 D600 d600 2SB6 2Sd600
    Text: Ordering num ber: EN346G 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors SANYO 100V/120V, 1A Low-Frequency Power Amp Applications i F e a tu re s • High breakdown voltage V ceo 100/120V, High current 1A. •Low saturation voltage, excellent hpE linearity.


    OCR Scan     		PDF EN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2SB631, 2SB631K, D600K 2SD60 D600K B631k b631 k b631k D600K to 126 TO-126 D600 d600 2SB6 2Sd600

    D600K

    Abstract: B631K PNP 2SD 2SB631 631k D600K to 126
    Text: Ordering number:EN34SG 2SB631,631K/2SD600,600K PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amp Applications F e a tu re s • High breakdown voltage Vceo 100/120V, High current 1A. • Low saturation voltage, excellent hpE linearity.


    OCR Scan     		PDF EN34SG 2SB631 631K/2SD600 00V/120V, 100/120V, 2SB631, 2SB631K, D600K B631K, D600K B631K PNP 2SD 631k D600K to 126

    transistor 2SB1142

    Abstract: sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788
    Text: SA0YO M IC A LE SS T 0-126M L T R A N SIST O R S F e a t u r e s ♦ Reduced cost and man-hour because of no insulator required for mounting ♦ Plastic-covered heat sink facilitating high-density mounting ♦ Increased collector dissipation when a transistor alone is operated


    OCR Scan     		PDF 0-126M T0-126ML) T0-126ML O-126 MT950123TR transistor 2SB1142 sanyo transistor tt series 2SB612K 2SB1143 2SA1750 2sc3788

    2SB816

    Abstract: 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416
    Text: 59 - fi 2SB 980 2SB 2SB 2SB 2SB 2S8 2SB 981 982 983 , 984 _ • 985 986 , 2S8 987 2SB 988 « Manuf. T K T tfi T fö T S tB t u q n 989 991 992 993 994 995 996 2SB 2SB 2SB 2SB 2SB 997 ^ 998 999 1000 1000A H 3 SANYO 9ÇR77C; 2SB775 2SB816 2SB825 2SB816 * 2SA17Q3


    OCR Scan     		PDF 2SA1253 2SB849 2SB775 2SA1264 2SB965 2SB1371 2SA1264 2SB1372 2SB816 2SA1265 2SB1212 2SB921 2SB873 2SA1120 2SB1085B 2sb 989 2SB941 2SC4341 2SB1416

    RTIP144C

    Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
    Text: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.


    OCR Scan     		PDF 2SB1186 2SB1186A 2SA1304 2SA1306 2SA1305 2SB1274 2SB1015 2SB1133 2SB1287 2SB1185 RTIP144C RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C