sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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C5030 transistor
Abstract: equivalent of transistor c5030 2SC5030 C5030 transistor 2sc5030
Text: 2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max)
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2SC5030
C5030 transistor
equivalent of transistor c5030
2SC5030
C5030
transistor 2sc5030
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SC5035 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features 4.6±0.2 High-speed switching High collector to base voltage VCBO Low collector to emitter saturation voltage VCE sat
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2SC5035
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2SC5037
Abstract: 220E 2SC5037A
Text: Power Transistors 2SC5037, 2SC5037A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features ● ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SC5037A base voltage 2SC5037A Collector to
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2SC5037,
2SC5037A
2SC5037
2SC5037
220E
2SC5037A
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2SC5032
Abstract: 220E
Text: Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 ● • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V VCEO
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2SC5032
2SC5032
220E
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220E
Abstract: 2SC5036 2SC5036A
Text: Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features ● ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SC5036 base voltage 2SC5036A Collector to
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2SC5036,
2SC5036A
2SC5036
220E
2SC5036
2SC5036A
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SC5037, 2SC5037A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features 4.6±0.2 High-speed switching High collector to base voltage VCBO Wide area of safe operation ASO Satisfactory linearity of foward current transfer ratio hFE
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2SC5037,
2SC5037A
2SC5037A
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SC5036, 2SC5036A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features 4.6±0.2 High-speed switching High collector to base voltage VCBO Wide area of safe operation ASO Satisfactory linearity of foward current transfer ratio hFE
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2SC5036,
2SC5036A
2SC5036
2SC5036A
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220E
Abstract: 2SC5035
Text: Power Transistors 2SC5035 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm • Features ■ Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 800 V VCES 800 V VCEO
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2SC5035
220E
2SC5035
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220E
Abstract: 2SC5034
Text: Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching M Di ain sc te on na tin nc ue e/ d Unit: mm • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage
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2SC5034
220E
2SC5034
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500
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2SC5034
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SC5032 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features ● ■ Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage
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2SC5032
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C5030 transistor
Abstract: No abstract text available
Text: 2SC5030 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5030 Strobe Flash Applications Medium Power Amplifier Applications Unit: mm • High DC current gain : hFE 1 = 800 to 3200 (VCE = 2 V, IC = 0.5 A) • Low saturation voltage: VCE (sat) = 0.5 V (max)
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2SC5030
C5030 transistor
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2SC5034
Abstract: 220E
Text: Power Transistors 2SC5034 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 4.6±0.2 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 500 V VCES 500 V Collector to emitter voltage
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2SC5034
2SC5034
220E
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2SC5030
Abstract: transistor 2sc5030
Text: TO SH IBA 2SC5030 TOSHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC5030 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hjrg i = 800~3200 * V nr>T7> (-o'! = 250 (Min/) —A.' All ' ' • • Low Saturation Voltage
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2SC5030
2SC5030
transistor 2sc5030
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2SC503
Abstract: 2SC5031 2SC504 2SA503 2SA504
Text: TOSHIBA {DISCRETE/OPTO} 2SC503 2SC504, 9097250 TOSHIBA SILICON NPN EPITAX IA L TYPE PCT PROCESS 5 6C <D I S C R E T E / O P T O ) 07 4 U 9 Ü 7*"3 5 W 5 ' Unit in mm $9 . 3 9 Ì . 1 A X . HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING. APPLICATIONS.
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2SC5031
2SC504,
80MHz
2SC503)
2SC504)
2SA503
2SA504.
2SC503
2SC504
2SA504
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2SC5030
Abstract: No abstract text available
Text: TOSHIBA 2SC5030 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5030 Unit in mm STOROBE FLASH APPLICATIONS M E D IU M POWER AMPLIFIER APPLICATIONS 8.0 ± 0.2 • High DC Current Gain : ^FE l —800~3200 hpE( 2) —250 (Min.) Low Saturation Voltage : v CE(sat) = °-5V (Max.)
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2SC5030
2SC5030
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2SC2804
Abstract: 2SC517 2Sd428 2sc1279 2SC503 2SC1515 2SC1923 2sc1907 2SC1047 2SC1809
Text: m s T y p e No. tt € Manuf. = » SANYO X S TOSHIBA 2SC 778 / = # 2SC51" 2 SC 779 3K 3E 2SC2073 2SC 780A Ä 2 * 2 SC 780AGTM X £ 2SC2551 * 2SC 781 S 9 2SC503 * 2SC 782 X 2SC 782A K S 2SC782 * - » * 2SC 783 , * 2SC 784 * 2SC 785 „ * * * 2 SC 786 * 2SC 787
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2SC51T
2SC2166
2SC2073
2SD859A
2SC3968
2SC780ACG)
2SC1279
2SC1515
2SC1573
2SC1914A
2SC2804
2SC517
2Sd428
2SC503
2SC1923
2sc1907
2SC1047
2SC1809
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC5030 TOSHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC5030 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS 5.0 ± 0 .2 • High DC Current Gain : hjpg i = 800~3200 hpE (2)= 250 (Min.) Low Saturation Voltage : v CE(sat) = °-5V (Max.)
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2SC5030
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5030 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SC5Q3Q STOROBE FLASH APPLICATIONS U nit in mm MEDIUM POWER AMPLIFIER APPLICATIONS 8.0 ± 0.2 • High DC Current Gain : hpE i = 800~3200 hug (o)= 250 (Min.) • Low Saturation Voltage : VCE (sat) = 0.5V (Max.)
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2SC5030
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ic t 4a 8
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL TYPE 2SC5030 STOROBE FLASH APPLICATIONS. U n it in mm M E D IU M POW ER AM PLIFIER APPLICATIONS. • • • High DC C urrent Gain : h F E l = 800-3200 (VCE = 2V, Ic = 0.5A) h F E ( 2 ) = 250 (Min.) (VCE = 2V, IC = 4A) Low Saturation Voltage
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2SC5030
ic t 4a 8
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2SC1681
Abstract: 2SC1044 2SC2634 2SC1914A 2SC871 2SC879 2sc1741 2sc2061 2SC1842 2SC503
Text: tt s £ Type No. £ Manuf. SANYO m n = TOSHIBA NEC * 2SC 848 JTtìl 2SC4641 2SC941 * 2SC 849 •±ii 2SD734 2SC367 G * 2SC 850 ±jS 2SD734 2SC503 * 2SC 851 * 2SC 852 * 2SC 853 ^ * 2 SO 854 * 2SC 855 * 2SC 856 ^ m b m a w 8x3 •drii S ÍZ * * 2SC 857 .
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2SC4641
2SC941
2SC1010
2SC458
2SC1740LN
2SD734
2SC367
2SC1741
2SC503
2SC1681
2SC1044
2SC2634
2SC1914A
2SC871
2SC879
2sc1741
2sc2061
2SC1842
2SC503
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2SC5030
Abstract: transistor 2sc5030
Text: TO SH IBA 2SC5030 TOSHIBA TRANSISTOR STOROBE FLASH APPLICATIONS SILICON NPN EPITAXIAL TYPE 2SC5030 Unit in mm MEDIUM POWER AMPLIFIER APPLICATIONS • High DC Current Gain : hjrg i = 800~3200 * V nr>T7> (-o'! = 250 (Min/) —A.' All ' ' • • Low Saturation Voltage
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2SC5030
2SC5030
transistor 2sc5030
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2SC503
Abstract: 2SC504 2SA503 2SC503-2SC504 2SC503/Y
Text: TOSHIBA ÍDISCRETE/OPTO} ~5b » i j SOTTESO 0D0740T O y 2 S C 5 3 2 S C 5 4 SILICON NPN EPIT A X IA L TYPE PCT PROCESS , 5 òC 9097250 TOSHIBA CDISCRETE/OPTO) U7 4 U 9 HIGH FREQUENCY AMPLIFIER APPLICATIONS. o 7*-3 5 W $ ' Unit in mm 09.S9MAX. HIGH SPEED SWITCHING. APPLICATIONS.
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0D0740T
80MHz
2SC503)
2SC504)
2SA503
2SA504.
2SC503
2SC504
2SC503-2SC504
2SC503/Y
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