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    International Rectifier 2N6769

    TRANSISTOR,MOSFET,N-CHANNEL,450V V(BR)DSS,11A I(D),TO-3
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    Quest Components 2N6769 6
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    2N6769 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6769 Central Semiconductor NPN EPOXY Transistors Scan PDF
    2N6769 Fairchild Semiconductor N-Channel Power MOSFETs, 12A, 450V/500V Scan PDF
    2N6769 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    2N6769 International Rectifier TO-3 N-Channel HEXFETs Scan PDF
    2N6769 IXYS High Voltage Power MOSFETs Scan PDF
    2N6769 IXYS High Voltage Power MOSFETs Scan PDF
    2N6769 IXYS HIGH VOLTAGE POWER MOSFET DIE Scan PDF
    2N6769 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    2N6769 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2N6769 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6769 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6769 Unknown FET Data Book Scan PDF
    2N6769 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6769 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6769 National Semiconductor N-Channel Power MOSFETs Scan PDF
    2N6769 Semelab MOS Transistors Scan PDF
    2N6769 Semiconductor Technology High Voltage MOS Power Field Effect Transistors Scan PDF

    2N6769 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7058

    Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
    Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20


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    PDF VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066

    2N6805

    Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab


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    PDF 2S81188 2S8891 2S8632K SML3552 SML3575 SML3578 SML69501 SML69509 2N6805 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


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    PDF 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN

    2N6770

    Abstract: 13002 l 2N6769 W10t
    Text: A4 FAIRCHILD SEMICONDUCTOR I 'ÏÜ’I 3 4 ^ 7 4 0DE7Ö25 3 | ~ . . - 2N6769/2N6770 N-Channel Power MOSFETs, 12 A, 450 V /500 V F A IR C H IL D A Schlumberger Company Power And Discrete Division Description T-39-13


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    PDF 2N6769/2N6770 T-39-13 2N6769 2N6770 2N6770 2N6769/2N6770 W10TH- 13002 l W10t

    2N6770

    Abstract: 2N6769
    Text: Standard Power MOSFETs File N u m be r 2N6769, 2N6770 1899 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistore 11A and 12A, 4 50 V -5 0 0 V rDS on> = 0.50 and 0.40 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited


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    PDF 2N6769, 2N6770 50V-500V 2N6769 2N6770

    2N6770

    Abstract: 2n6800 2N6769 2N6770 JANTXV 2N6770 JANTX
    Text: Standard Power MOSFETs File N u m be r 2N6769, 2N6770 1899 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistore 11A and 12A, 4 50 V -5 0 0 V rDS on> = 0.50 and 0.40 N-CHANNEL ENHANCEMENT MODE Features: • SOA is power-dissipation limited


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    PDF 2N6769, 2N6770 50V-500V 2N6769 2N6770 2N6796 O-2I35AF O-205AF 2N6800 2N6770 JANTXV 2N6770 JANTX

    IRF449

    Abstract: 1RF9130 1RF431 IRF460 irf9243 IRFAG52 2N6B04 irf420 IRF9141 2N6761
    Text: HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER TO-3 Package INTERNATIONAL R ECTIFIER SbE D 4055455 OOlOSbS □ • I«R T - 3 ^ - 0 3 N-CHANNEL Types % V IRF451 IRF453 2N6769 IRF441 IRF443 1RF431 2N6761 IRF433 IRF421 IRF423 IRF460 IRF462 IRF450 2N6770 IRF452


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    PDF IRF451 T0-204AA IRF453 2N6769 IRF441 IRF443 1RF431 2N6761 IRF433 IRF421 IRF449 1RF9130 1RF431 IRF460 irf9243 IRFAG52 2N6B04 irf420 IRF9141 2N6761

    2N6770

    Abstract: No abstract text available
    Text: T2 UNITRODE CORP 9347963 UNITRODE 0G1D5E0 4 ï ~ CORP 92D 10520 POWER MOSFET TRANSISTORS 2N6769 J, JTX, JTXV 2N6770 500 Volt, 0.4 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability


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    PDF 2N6769 2N6770 001D523 2N6770

    1N7001

    Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
    Text: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR


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    PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6659 O-205AF 1N7001 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90

    2N7003

    Abstract: 2N7009 2N7011 2N7073 G50-12C1 2N6755 2N6756 2N6757 2N6758 2N6759
    Text: - 248 M - € 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 f- +• */!/ * tt € f f t * £ ÍS T a = 2 5 '0


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    PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-254AA 2N7003 2N7009 2N7011 2N7073 G50-12C1 2N6759

    G307

    Abstract: 2N6769 2N6770 2N677
    Text: H E O | 4055452 0 0 0 ^ 3 3 0 7 | Data Sheet No. PD-9.330D INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER H E X F E T T R A N S IS T O R S J E D E C R E G IS T E R E D N-CHANNEL P O W E R M Q SF E T s I « R *JAINITXV2N6770 *JA N TX2N B77G SN B77Q


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    PDF JAINITXV2N6770 MIL-S-19500/543 2N6770 2N6769 G-310 G307 2N677

    2n6152

    Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90
    Text: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (*typ) (max) (pF) (max) *typ (0) *typ (A) Id (A) Vg s (V) *typ (S) Id


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    PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 1N7000 2N61B 2N676 1N7001 2N5184 2N6164 2n6800 IXTP4N90

    2N5158

    Abstract: 2N5159 2N5184 2n6152 2N6164 CDBCB450KCAY70 2N6757 2N6758 2N676 2N6762
    Text: - ; £ H £ }± Vd s or € * Vd g % V Vg s m (ÌR=2bV) ID fi*J sé Id s : Fd Vg s th) Ciss I d (oíi ) Vd s = Coss Crss * /CH * /CH (A) (Vf) (max) (nA) Vg s (V) ( M A) (max) m ax Vd s (V) (V) (V) # B til % V g s -O Vg s (V) Id ♦typ (mA) (0) Vg s (V) ♦typ


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    PDF 2N6757 O-204AA 2N6758 2N675S 2N6791 O-205AF 2N6792 2N6793 2N5158 2N5159 2N5184 2n6152 2N6164 CDBCB450KCAY70 2N676 2N6762

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


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    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    PDF VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


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    PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630

    jfet selector guide

    Abstract: T0-220SM
    Text: SEMELAB pic Type_No 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763


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    PDF 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 jfet selector guide T0-220SM

    2n6152

    Abstract: 2N5159 2N5184 2N6164 2N6755 2N6756 2N6757 2N6758 2N6759 2N676
    Text: - 248 M - € tt f f t t Vd s or € i * £ Vg s ÍS T a= 2 5 '0 * /CH Vd g a s. 1 GSS Pd Id Vg s t h 1 DSS max * /CH ft % 4# fe (13=25*0 I d (o n ) Vd s = Vg s C iss Coss C rss (*typ) (max) (pF) (*typ) (max) (pF) (*typ) (max) (pF) ft & m n Vg s =0 (max)


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    PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 2N6791 O-205AF 2N6792 2n6152 2N5159 2N5184 2N6164 2N6759 2N676

    1N6801

    Abstract: 2N6767 2n6800 2N6755 2N6756 2N6757 2N6758 2N6759 2N676 2N6761
    Text: - 248 - f ft * t Vds or M € tt € i Vdg V 2N6755 IR N 60 2N6756 N 100 IR 2N6757 IR N 150 2N6758 N 200 IR 2N6759 IR N 350 2N6Ï6Û N 400 IR 2N6761 N 450 IR 2N6762 N 500 IR 2K6763 IR N 60 2N6764 IR N 100 2N6765 IR N 150 2N6766 IR N 200 2N6767 IR N 350 2N6768


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    PDF 2N6755 T0-204AA 2N6756 O-204AA 2N6757 2N6758 O-205AF 2N6798 1N6801 2N6767 2n6800 2N6759 2N676 2N6761

    T0220H

    Abstract: 2N6795 2N3824 2N3824LP 2N4391 2N4393 2N4416 2N6659 T018 T046
    Text: MAE D • Ö1331Ö7 00004bS 110 ■ SMLB SEMELABL SEMELAB LTD T-ir.ot MOS TRANSISTORS Type Rei 2N3824 HR 2N3824LP HR 2N4391 EEQ 2N4392 REQ 2N4393 EEQ 2N4416 REQ 2N6659 HR 2N6660 HR 2N6661 HR 2N6661-220H-■ISO HR 2N6755 REQ 2H6756 REQ REQ 2N6757 REQ 2N6758


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    PDF 2N3824 2N3824LP 2N4391 2H4392 2N4393 2N4416 2N6659 2N6660 2N6661 2N6661-220H- T0220H 2N6795 T018 T046

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    2N6769

    Abstract: No abstract text available
    Text: 2N 6769 2N 6770 H a r r is N-Channel Enhancement-Mode Power MOS Field-Effect Transistors A u g u s t 1991 Package F e a tu re s TO -20 4 A A BOTTOM VIEW • 11A and 12A, 450V - 500V • fDS on = 0 .5 ÎÏ and 0 .4 fi • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds


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    UFN540

    Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
    Text: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist­ ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State


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    PDF U2TA506 U2TA508 U2TA510 861-6S40 UFN540 UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450