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    2N6499 Search Results

    2N6499 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6499 Boca Semiconductor HIGH VOLTAGE NPN SILICON POWER TRANSISTORS Scan PDF
    2N6499 Central Semiconductor NPN Silicon Power Transistor, TO-220 Scan PDF
    2N6499 Central Semiconductor Power Transistors Scan PDF
    2N6499 Mospec POWER TRANSISTORS(5A,80W) Scan PDF
    2N6499 Mospec High Voltage NPN Silicon Power Transistor Scan PDF
    2N6499 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6499 Motorola The European Selection Data Book 1976 Scan PDF
    2N6499 Motorola European Master Selection Guide 1986 Scan PDF
    2N6499 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6499 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6499 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6499 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6499 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6499 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6499 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6499 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors, Epoxy Cases Scan PDF

    2N6499 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N6499 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)350 V(BR)CBO (V)450 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)80# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition)450 V(CE)sat Max. (V)1.5 @I(C) (A) (Test Condition)2.5


    Original     		PDF 2N6499

    Untitled

    Abstract: No abstract text available
    Text: 2N6497 2N6498 2N6499 SILICON NPN POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6497, 2N6498, and 2N6499 are silicon NPN power transistors designed for high voltage amplifier applications. MARKING: FULL PART NUMBER


    Original     		PDF 2N6497 2N6498 2N6499 2N6497, 2N6498, 2N6499 O-220

    MJE13009

    Abstract: MJE-13009 D44C11 Data MJE700T BU406 bu406d BU407D mje13007 mje13009 equivalent MJE800T equivalent
    Text: TO-220 Power Transistors TO-220 Case Continued TO-220FP Full Pak • Fully Isolated Standard TYPE NO. Optional IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6497 5.0 80 350 250 10 2N6498 5.0 80 400 300 10 2N6499 5.0 80 450 350 10 75 2.5 2N6530


    Original     		PDF O-220 O-220 O-220FP 2N6497 2N6498 2N6499 2N6530 2N6531 2N6532 2N6533 MJE13009 MJE-13009 D44C11 Data MJE700T BU406 bu406d BU407D mje13007 mje13009 equivalent MJE800T equivalent

    2N6499

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N6499 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High breakdown voltage APPLICATIONS ·Designed for high voltage inverters, switching regulators and line operated amplifier applications


    Original     		PDF 2N6499 O-220C 250mA 2N6499

    2N6497

    Abstract: SAT Line Amplifier transistor 2N6497 300V transistor npn 2a 2N6498 2N6499
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors 2N6497/6498/6499 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 250V(Min)- 2N6497 = 300V(Min)- 2N6498 = 350V(Min)- 2N6499 ·DC Current Gain: hFE= 10-75@IC= 2.5A


    Original     		PDF 2N6497/6498/6499 2N6497 2N6498 2N6499 2N6497 SAT Line Amplifier transistor 2N6497 300V transistor npn 2a 2N6498 2N6499

    bu408 equivalent

    Abstract: 330.150 bu806 equivalent equivalent mje13005 mje13007 equivalent MJE800T equivalent MJE700T bu406d BU407D BU408D
    Text: Standard Optional Power Transistors TO-220 Case Continued TO-220 TYPE NO. IC PD BVCBO BVCEO (A) MAX (W) (V) MIN (V) MIN MIN MAX 2N6497 5.0 80 350 250 10 2N6498 5.0 80 400 300 10 2N6499 5.0 80 450 350 2N6530 8.0 65 80 80 2N6531 8.0 65 100 2N6532 8.0 65 100


    Original     		PDF O-220 O-220 2N6497 2N6498 2N6499 2N6530 2N6531 2N6532 2N6533 O-220FP bu408 equivalent 330.150 bu806 equivalent equivalent mje13005 mje13007 equivalent MJE800T equivalent MJE700T bu406d BU407D BU408D

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    STI-430

    Abstract: STI430 TO247 package
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 KSP1055 KSP1075 KSP1095 SDT4945 UPT524 UPT525 MJ411 2SDl162M 2SD1162L'+'+" 25 30 - 35 40 45 -50 2SDl162K MJ3030 SPC431M SPC431 SDT1013 2N6235 BUT21A BUT21A A) t) SM14mm!'\ MJE53T MJE53T PEC7306A BUS21A (A)


    Original     		PDF SVT300-5 MJ3430 SPC430 2N5240 BDY43 SDT40304 STI-430 STI430 TO247 package

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    "Tektronix 475"

    Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,


    Original     		PDF 48/BUX BUX48 BUX48A AMPERE32 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A "Tektronix 475" equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    Untitled

    Abstract: No abstract text available
    Text: £ Z T SGS-THOMSON ^7# 2N6497 2N6498-2N6499 HIGH VOLTAGE POWER SWITCH DESCRIPTIO N The 2N6497/98/99 are silicon multiepitaxial mesa NPN transistors in Jedec TO-220 plastic package particularly intended for switch-mode applications. ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		PDF 2N6497 2N6498-2N6499 2N6497/98/99 O-220 2N6497 2N6498 2N6497/8/9

    25A1075

    Abstract: 2N6497 2N6498 2N6499
    Text: 2N6497 2N6498 2N6499 cen trai Central semiconductor Corp. Central semiconductor Corp. ♦I NPN SILICON POWER TRANSISTOR JEDEC TO-220 CASE 1 4 5 A dam s Avenue Hauppauge, New Y ork 11 7 8 8 DESCRIPTION The CENTRAL SEM ICONDUCTOR 2N 6497, 2N6498, 2N 6499 types are Silicon NPN Power Transistors


    OCR Scan     		PDF 2N6497 2N6498 2N6499 O-220 2N6497, 2N6498, 2N6499 2N6498 25A1075

    2N6530

    Abstract: MJE700T
    Text: Power Transistors TO-220 Case Continued TY P f NO, 1C m MW PNP PD m MAX BVépo BVCtO m VCE(SAT) @ 1C h re (A) m m m MB MAX (V) (A) fT (MHz) Iflffcl mnf MAX 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499 5.0


    OCR Scan     		PDF O-220 2N6497 2N6498 2N6499 2N6530 2N6531 2N6532 2N6533 BU406 BU406D MJE700T

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-220 Case Continued TYPE NO. NPN PNP ic PD (A) (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499


    OCR Scan     		PDF O-220 2N6497 2N6498 2N6499 2N6530 2N6531 2N6532 2N6533 D44H11 D45H11

    2N6497

    Abstract: N6497 2N6498 2N6499
    Text: HIGH VOLTAGE NPN SILICON POWER TRANSISTORS NPN 2N6497 2N6498 2N6499 . designed for high voltage inverters,switching regulators and line operated amplifier applications. Boca Semiconductor Corp. BSC FEATURES: * Collector-Emitter Sustaining VoltageVCE0(SUS) = 250 V (Min)-2N6497


    OCR Scan     		PDF -2N6497 -2N6498 -2N6499 2N6497 2N6498 2N6499 2N6499 2N6497, N6497

    2N6531B

    Abstract: 2N660 2N6587 2N6558S 2N6584
    Text: r S E ME L AB 37E LTD IVIELABil Type No. 2N6497 2N6498 2N6499 2N6500 • 2N6511 2N6512 2N6513 2N6514 2N6531B 2N6532 op tion "1^ Polarlty HI-REL SCREEN SCREEN SCREEN SCREEN NPN NPN NPN NPN NPN Packa3e VCEO •c cont J> m V' 'Xg. - 6133167 □ □ 0 D D E ci 4


    OCR Scan     		PDF 2N6497 2N6498 2N6499 2N6500 2N6511 2N6512 2N6513 2N6514 2N6531B 2N6532 2N660 2N6587 2N6558S 2N6584

    045h11

    Abstract: bu4060 bu406d BU407D MJE3055T MJE700T
    Text: Pow er Tran sistors TO-220 Case Continued TYPE NO. NPN PNP ic PD (A) (W) MAX BVCBO BVCEO @ IC hFE (V) (V) MIN MIN MIN MAX (A) VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 2N6497 5.0 80 350 250 10 75 2.5 5.0 5.0 5.0 2N6498 5.0 80 400 300 10 75 2.5 5.0 5.0 5.0 2N6499


    OCR Scan     		PDF O-220 2n6497 2n6498 2n6499 2n6530 2n6531 2n6532 2n6533 bu406 bu406d 045h11 bu4060 bu406d BU407D MJE3055T MJE700T

    2N6497

    Abstract: 2N6499 2N6498
    Text: 2N6497,2N6498,2N6499 NPN ACTIVE-REGION SAFE OPERATING AREA SOA Ic , COLLECTOR CURRENT (Am p) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic- V ce


    OCR Scan     		PDF 2N6497, 2N6498 2N6499 300ns 2N6497 2N6499 2N6497 2N6498

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C