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    TDK Electronics B32522N6474K000

    CAP FILM 0.47UF 10% 450VDC RAD
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    DigiKey B32522N6474K000 Bulk 6,589 1
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    Littelfuse Inc 2N6405G

    SCR 800V 16A TO220AB
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    Littelfuse Inc 2N6404G

    SCR 600V 16A TO220AB
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    DigiKey 2N6404G Box 3,230 1
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    Ozdisan Elektronik 2N6404G
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    TDK Electronics B32522N6474J189

    CAP FILM 0.47UF 5% 450VDC RADIAL
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    DigiKey B32522N6474J189 Cut Tape 2,797 1
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    TDK Electronics B32522N6474K189

    CAP FILM 0.47UF 10% 450VDC RAD
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    2N64 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N64 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N64 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N64 Unknown GE Transistor Specifications Scan PDF
    2N64 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N64 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N64 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N64 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N64 Unknown Vintage Transistor Datasheets Scan PDF
    2N64 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N640 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N640 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N640 Unknown GE Transistor Specifications Scan PDF
    2N640 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N640 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2N640 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N640 Unknown Vintage Transistor Datasheets Scan PDF
    2N640 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N640 RCA RCA Transistor and Diode Data Scan PDF
    2N6400 On Semiconductor THYRISTOR SCR 50V 160A 3TO-220AB BOX Original PDF
    2N6400 On Semiconductor Silicon Controlled Rectifier Original PDF
    ...

    2N64 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6476

    Abstract: 2N6475
    Text: Inchange Semiconductor Product Specification 2N6475 2N6476 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Excellent safe operating area APPLICATIONS ·General-purpose medium power for switching and amplifier applications


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    PDF 2N6475 2N6476 O-220 O-220) 2N6475 -120V 2N6476

    2N6488G

    Abstract: No abstract text available
    Text: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


    Original
    PDF 2N6487, 2N6488, 2N6490, 2N6491 2N6490 2N6491 O-220AB 2N6488G

    2N6490

    Abstract: 2N6487
    Text: Product Specification www.jmnic.com 2N6487 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2N6490 APPLICATIONS ・It is intended for use in power linear and low frequency switching applications PINNING PIN DESCRIPTION


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    PDF 2N6487 O-220 2N6490 O-220) 2N6490 2N6487

    2N6465

    Abstract: npn 100v 1.5a 2N6466 2N6467 2N6468 2N646 v130100
    Text: Inchange Semiconductor Product Specification 2N6465 2N6466 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Complement to type 2N6467 2N6468 APPLICATIONS ・For use in audio amplifier applications PINNING see Fig.2


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    PDF 2N6465 2N6466 2N6467 2N6468 2N6465 npn 100v 1.5a 2N6466 2N6468 2N646 v130100

    2N6437

    Abstract: 2N6339 2N6341 2N6438
    Text: ON Semiconductort 2N6437 2N6438 * High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —


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    PDF 2N6437 2N6438 2N6339 2N6341 204AA r14525 2N6437/D 2N6437 2N6341 2N6438

    2N6427

    Abstract: 2N6426
    Text: ON Semiconductort 2N6426* 2N6427 Darlington Transistors NPN Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Collector–Base Voltage VCBO 40 Vdc Emitter–Base Voltage VEBO 12 Vdc


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    PDF 2N6426* 2N6427 r14525 2N6426/D 2N6427 2N6426

    2N6426G

    Abstract: 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64
    Text: 2N6426*, 2N6427 Preferred Device Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N6426, Date Code http://onsemi.com COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector − Emitter Voltage


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    PDF 2N6426* 2N6427 2N6426, 2N6426/D 2N6426G 2N6427 2N6426 2N6426RLRA 2N6427RLRA 2N6427RLRAG 2n64

    2N6339

    Abstract: 2N6340 2N6338 2N6341 2N6436
    Text: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 DESCRIPTION •With TO-3 package ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6436~38 APPLICATIONS ·For use in industrial-military power amplifier


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    PDF 2N6338 2N6339 2N6340 2N6341 2N6436 2N6338 2N6339 2N6340 2N6341

    1N5825

    Abstract: 2N6497 MSD6100
    Text: ON Semiconductor High Voltage NPN Silicon Power Transistors 2N6497 . . . designed for high voltage inverters, switching regulators and line–operated amplifier applications. Especially well suited for switching power supply applications. 5 AMPERE POWER TRANSISTORS


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    PDF 2N6497 r14525 2N6497/D 1N5825 2N6497 MSD6100

    Untitled

    Abstract: No abstract text available
    Text: ,6,62  /LF 46&/  Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON TRANSISTORS 2N6430, 6431 TO-18 Metal Can Package General Purpose Transistors. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    PDF 2N6430, 2N6430 2N6431 C-120 31Rev300701

    2N6465

    Abstract: No abstract text available
    Text: 2N6465 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


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    PDF 2N6465 O213AA) 1-Aug-02 2N6465

    2N6463

    Abstract: No abstract text available
    Text: 2N6463 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 250V 0.41 (0.016)


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    PDF 2N6463 O205AD) 10/20m 1-Aug-02 2N6463

    str f 6454

    Abstract: str 6454 ic str 6454 str f -6454 2N6451 2n6452 6453 NS2N 2N6453 2N6454
    Text: TYPES 2N64B1 THRU 2N6454 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L S 7 3 1 2 0 0 8 . JU N E 1973 DESIGNED FOR LOW-NOISE PREAMPLIFIER APPLICATIONS ESPECIALLY HYDROPHONES, IR SENSORS, AND PARTICLE DETECTORS • Low V„ . . . 5 nV/A/Hz Max at 10 Hz 2N6451, 2N6453


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    PDF 2N64B1 2N6454 2N6451, 2N6453) 2N6453, 2N6454) str f 6454 str 6454 ic str 6454 str f -6454 2N6451 2n6452 6453 NS2N 2N6453

    2N6485

    Abstract: 2N6483 X2N6485 2n6485 equivalent 2N64 U401
    Text: _CQIOylC _| _ Dual N-Channel JFET Low Noise Amplifier CORPORATION 2N6483 - 2N6485 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • • • • Ultra Low Noise High CMRR Low Offset Tight Tracking Gate-Source or Gate-Drain Voltage (Note 1) .-50V


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    PDF 2N6483 -2N6485 10sec) 250mW 400mW 2N6485 X2N6485 2n6485 equivalent 2N64 U401

    Untitled

    Abstract: No abstract text available
    Text: B 24 9-97 2N6449, 2N6450 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • HIGH VOLTAGE Absolute maximum ratings at TA = 25°C 2N6449 -3 0 0 V -2 0 0 V Reverse Gate Drain Voltage -3 0 0 V -2 0 0 V Continuous Forward Gate Current Continuous Device Power Dissipation


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    PDF 2N6449, 2N6450 2N6449 Q00G744

    LB 124 transistor

    Abstract: LB 124 d MPQ6427 transistor BC 236 16-SOIC 2N6427 MMBT6427
    Text: 2N6427/MMBT6427/MPQ6427 NATL SEMICOND OISCRETE 11E: D | k 501130 T-33-21 5 ^ N a tio n a l J l A S e m ic o n d u c to r 2N6427 E llllll Ull MMBT6427 MPQ6427* TO “ 236 S O T - 23 T O -9 2 ^ | C =E 10-116 TL/G/10100-7 TL/Q/10100-5 Bc TUG/10100-1 NPN Darlington Transistor


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    PDF bSD1130 00372b0 T-33-21 2N6427 MMBT6427 MPQ6427* to-236 sot-23) TL/G/10100-7 TL/Q/10100-5 LB 124 transistor LB 124 d MPQ6427 transistor BC 236 16-SOIC

    Untitled

    Abstract: No abstract text available
    Text: 0043592 A P I ELECTRONICS INC A P I 26C 00234 ELECTRONICS INC 2b D » F | d D4 3 S c12 D 00 0 2 3 4 b COLLECTOR CURRENT = 15 AMPS NPN TYPES - CONTINUED Device No C ase 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 TO-3 T O -3 TO-3 TO-3 TO-3 TO-3


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    PDF 2N6496 2N6579 2N6580 2N6581 2N6582 2N6583 2N6584 2N6585 O61/1

    2N6497

    Abstract: 2N6499 2N6498
    Text: 2N6497,2N6498,2N6499 NPN ACTIVE-REGION SAFE OPERATING AREA SOA Ic , COLLECTOR CURRENT (Am p) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic- V ce


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    PDF 2N6497, 2N6498 2N6499 300ns 2N6497 2N6499 2N6497 2N6498

    2N6491

    Abstract: 2N6488 2N6489 2N6490 2N6486 2N6487 N648 407f N6486
    Text: Æ & M O S P E C COMPLEMENTARY SILICON PLASTIC PNP 2N6489 2N6490 2N6491 NPN 2N6486 2N6487 2N6488 POWER TRANSISTORS . designed for use in general-purpose amplifier and switching applications. FEATURES: * Collector-Emitter Sustaining VoltageV c e o s u s = 40 v Min) -2N6486, 2N6489


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    PDF -2N6486, 2N6489 -2N6487, 2N6490 -2N6488, 2N6491 2N6486 2N6487 2N6491 2N6488 2N6489 2N6490 N648 407f N6486

    U3540

    Abstract: 2n5039
    Text: 2N5038, 2N5039, 2N6496 HARRIS SEMICOND SECTOR File Number SbE ]> • 698 43G2271 GD4044fl STI H H A S High-Current, High-Power High-Speed Silicon N-P-N Planar Transistors lz z 32'-‘/3 Devices for Switching and Amplifier Circuits in Industrial and Commercial Applications


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    PDF 2N5038, 2N5039, 2N6496 43G2271 GD4044fl 2NS038, 2NS039 2N6496 22377R' U3540 2n5039

    TA8724

    Abstract: 2N6248 transistor 2n6246 2N6469
    Text: 2N6246, 2N6247, 2N6248, 2N6469 H A RR IS S E M I C O N D S E C T O R File N u m b e r SbE D 677 I 430 2 57 1 0 0 4 0 5 2 0 3T3 « H A S Silicon P-N-P Epitaxiai-Base, High-Power Transistors TERMINAL DESIGNATIONS General-Purpose Types of Switching and Linear-Amplifier Applications


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    PDF 2N6246, 2N6247, 2N6248, 2N6469 O-204AA 2N6246 2N6469 P-6019 TA8724 2N6248 transistor 2n6246

    2N6449

    Abstract: CISS2 2N6450
    Text: HIGH VOLTAGE 2N6449 2N6450 SILICON E PI TA X IA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS G E O M E T R Y 5 5 9 , PG. 6 0 TO-39 Package • HIGH BV qss • • •300V MIN 2N6449 • HIGH POWER RATING . . . 5W ELECTRICAL DATA 00370 350dia 0 ^ 1 5 DIA


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    PDF 2N6449 2N6450 2N6449) 2N6450 -100V, -10juA, 300/us, CISS2

    rca ta8405

    Abstract: No abstract text available
    Text: File Number 680 •7 ^ 3 —/ / HARRIS SEMICOND SECTOR 5bE D • 2N6477, 2N6478 4302571 0D405bl Tib H H A S Medium-Power Silicon N-P-N Transistors TERMINAL DESIGNATIONS For Intermediate Power Applications in Industrial and Commercial Equipment F L A N G E


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    PDF 2N6477, 2N6478 0D405bl O-220AB 2N6477 2N5298 2N6477. 2N6478. 0040SbS rca ta8405

    clare mercury relay

    Abstract: P609 30343 power 2N6422 2N6421 30343 2N6422 GE
    Text: HARRIS SEMICOND SECTOR SbE ì> 2N6420, 2N6421, 2N6422, 2N6423 4302 27 1 QD4D552 ^03 • H A S File Number 1100 T 3 3 -R High-Voltage Medium-Power Silicon P-N-P Transistors For High-Speed Switching and Linear-Amplifier Applications Features: ■ High voltage ratings:


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    PDF 2N6420, 2N6421, 2N6422, 2N6423 QD4D552 2N6420) 2N6421) 2N6422) 2N6423) clare mercury relay P609 30343 power 2N6422 2N6421 30343 2N6422 GE