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    2N3906C Search Results

    2N3906C Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3906C Korea Electronics Switching Transistor Original PDF
    2N3906C Korea Electronics TRANS GP BJT PNP 40V 0.2A 3TO-92 Original PDF
    2N3906C Korea Electronics Switching Transistor Scan PDF
    2N3906C Korea Electronics EPITAXIAL PLANAR PNP TRANSISTOR Scan PDF

    2N3906C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3906CSM

    Abstract: No abstract text available
    Text: 2N3906CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


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    PDF 2N3906CSM 10/1m 17-Jul-02 2N3906CSM

    1N916

    Abstract: 2N3904C 2N3906C
    Text: SEMICONDUCTOR 2N3906C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES ᴌLow Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) N E K @VCE=-30V, VEB=-3V. G D J ᴌExcellent DC Current Gain Linearity.


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    PDF 2N3906C -50nA -50mA, 2N3904C. x10-4 300ns 1N916 1N916 2N3904C 2N3906C

    2N3904C

    Abstract: 1N916 2N3906C
    Text: SEMICONDUCTOR 2N3906C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) N K @VCE=-30V, VEB=-3V. E G Excellent DC Current Gain Linearity.


    Original
    PDF 2N3906C -50nA -50mA, 2N3904C. x10-4 300ns 1N916 2N3904C 1N916 2N3906C

    3906c

    Abstract: 2N3906C marking 2n 2N3906
    Text: SEMICONDUCTOR 2N3906C MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking 2N 1 3906C K 3 No. Item 016 2 4 Marking Description 2N Series Name 3906C Device Name KEC K KEC CORP. Lot No. 016 Device Name 2000. 12. 27 Revision No : 0 Year


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    PDF 2N3906C 3906C 3906c 2N3906C marking 2n 2N3906

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N3906C TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR 5GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage


    Original
    PDF 2N3906C -50nA -50mA, 2N3904C. -10mA, 100MHz x10-4

    2N3906CSM

    Abstract: No abstract text available
    Text: 2N3906CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)


    Original
    PDF 2N3906CSM 10/1m 2-Aug-02 2N3906CSM

    2N3906CSM

    Abstract: No abstract text available
    Text: 2N3906CSM GENERAL PURPOSE PNP TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 3 2 1 1.91 ± 0.10


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    PDF 2N3906CSM 2N3906CSM

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    CHINA TV FBT

    Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
    Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: [email protected] Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV


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    PDF O-92M KRC102M KRC112M O-92L KTN2369, KTC3194 KTC3197, KTC3198 KTC945B KIA431 CHINA TV FBT transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS

    478 SOCKET PINOUT

    Abstract: 2N3906 PNP bipolar junction transistor pnp 8 transistor array "Microphone Preamplifiers" 312 2N3904 dual 2N3904 NPN Transistor Dual PNP Transistor THAT320S PNP monolithic Transistor Arrays THAT300
    Text: T H AT Corporation Low-Noise Matched Transistor Array ICs THAT 300 Series FEATURES APPLICATIONS 4 Matched NPN Transistors 300 4 Matched PNP Transistors (320) 2 Matched NPNs and PNPs (340) 4 Matched NP6N - 4 Matched PNP (380) • Microphone Preamplifiers ·


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    PDF THAT300 1613u 1232u 478 SOCKET PINOUT 2N3906 PNP bipolar junction transistor pnp 8 transistor array "Microphone Preamplifiers" 312 2N3904 dual 2N3904 NPN Transistor Dual PNP Transistor THAT320S PNP monolithic Transistor Arrays

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    1N916

    Abstract: 2N3904C 2N3906C
    Text: SEMICONDUCTOR 2N3904C TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C A FEATURES ᴌLow Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) N E K @VCE=30V, VEB=3V. G D J ᴌExcellent DC Current Gain Linearity.


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    PDF 2N3904C 2N3906C. x10-4 300ns 1N916 1N916 2N3904C 2N3906C

    Untitled

    Abstract: No abstract text available
    Text: Quad Low-Noise PNP Transistor Array T H AT Corporation THAT120 FEATURES APPLICATIONS • Four Matched PNP Transistors · Microphone Preamplifiers · Low noise — 0.75 · Tape Head Preamplifiers · High Speed — 325 MHz ft · Current Sources · Excellent Matching - 500 mV typ


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    PDF THAT120 THAT120

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original
    PDF

    2N3810 LCC

    Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
    Text: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5


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    PDF FM36235 M/0103/CECC/UK 1360/M VQC-03-003050 VQC-03-003049 U3158 2M8S02 2N3810 LCC 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


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    PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    1N916

    Abstract: 2N3904C 2N3906C
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3906C EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x = -50nA Max. , IBL=-50nA(Max.) @ VCe = -30V , V eb = -3V . • Excellent DC Current Gain Linearity.


    OCR Scan
    PDF 2N3906C -50nA -50mA, 2N3904C. 300ns 1N916 20/xs 300//S, 1N916 2N3904C 2N3906C

    1N916

    Abstract: 2N3904C 2N3906C
    Text: SEMICONDUCTOR TECHNICAL DATA 2N3906C EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Ic E x = -5 0 n A M a x . , lB L = ~ 5 0 n A (M ax .) @ V Ce = -3 0 V , V eb = -3 V . • Excellent DC Current Gain Linearity.


    OCR Scan
    PDF 2N3906C -50nA -50mA, 2N3904C. 300ns 1N916 20/xs 300//S, 2N3904C 2N3906C

    Untitled

    Abstract: No abstract text available
    Text: SEM IC O N D U C T O R 2N3906C TECHN ICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Ice-,—-50nA Max. , IBL=-50nA(Max.) D IM A -jä @VCe=-3 OV, V EB=-3 V. G- 1 • Excellent DC Current Gain Linearity.


    OCR Scan
    PDF 2N3906C ---50nA -50nA -50mA, 2N3904C. 300/iS,

    2N3904C

    Abstract: 1N916 20MS 2N3906C
    Text: SEMICONDUCTOR TECHNICAL DATA 2N3904C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcE x = 5 0 n A M a x . , lB L = 50n A (M ax.) @ V ce =30V , Veb=3V. • Excellent DC Current Gain Linearity.


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    PDF 2N3904C 2N3906C. Vce-10V, 300ns 1N916? 300//S, 2N3904C 1N916 20MS 2N3906C

    transistor 2N3907

    Abstract: t018 transistor 2N39Q4 2N3904D 2N3904DCSM 2N3906CSM T071 DUAL TRANSISTOR "Dual PNP Transistor"
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N3790X 2N3791 2N3791 CECC 2N3791-SM 2N3792 2N3792 CECC 2N3792-SM 2N3792LP CECC 2N3799 2N3799X 2N3800 2N3800DCSM 2N3801 2N3801DCSM 2N3802 2N3802DCSM 2N3803 2N3803DCSM 2N3804 2N3804DCSM 2N3805 2N3805A


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    PDF 2N3790X 2N3791 2N3791-SM 2N3792 2N3792-SM 2N3792LP 2N3799 2N3799X transistor 2N3907 t018 transistor 2N39Q4 2N3904D 2N3904DCSM 2N3906CSM T071 DUAL TRANSISTOR "Dual PNP Transistor"

    1N916

    Abstract: 20MS 2N3904C 2N3906C transistor 1tp
    Text: KEC KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA 2N3904C EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c e x =50nA Max. , IBL=50nA(Max.) @V ce=30V, Veb=3V. • Excellent DC Current Gain Linearity.


    OCR Scan
    PDF 2N3904C 2N3906C. 300ns 1N916 300//S, 20MS 2N3904C 2N3906C transistor 1tp