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    2N3719 Search Results

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    2N3719 Price and Stock

    Microchip Technology Inc 2N3719

    TRANS PNP 40V 3A TO5
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    DigiKey 2N3719 Bulk 100
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    Avnet Americas 2N3719 Bulk 22 Weeks 100
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    Newark 2N3719 Bulk 100
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    Microchip Technology Inc 2N3719 22 Weeks
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    Onlinecomponents.com 2N3719
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    NAC 2N3719 19
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    Master Electronics 2N3719
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    GTCAP 2N3719

    TRANSISTOR,BJT,PNP,40V V(BR)CEO,3A I(C),TO-5
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    Quest Components 2N3719 30
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    Texas Instruments 2N3719

    TRANSISTOR,BJT,PNP,40V V(BR)CEO,3A I(C),TO-5
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    Quest Components 2N3719 2
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    SCA,MOTO 2N3719

    TRANSISTOR,BJT,PNP,40V V(BR)CEO,3A I(C),TO-5
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    Quest Components 2N3719 1
    • 1 $27.5244
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    National Semiconductor Corporation 2N3719

    NSC 2N3719 UNINSPECTED
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    ES Components 2N3719 413
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    2N3719 Datasheets (30)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3719 Central Semiconductor Leaded Small Signal Transistor General Purpose - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=3 / Hfe=25-180 / fT(Hz)=60M / Pwr(W)=6 Original PDF
    2N3719 Microsemi Silicon PNP Power Transistor Original PDF
    2N3719 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=40 / Ic=3 / Hfe=25-180 / fT(Hz)=60M / Pwr(W)=6 Original PDF
    2N3719 API Electronics 5 Amps PNP Transistors Scan PDF
    2N3719 API Electronics 5 AMPS PNP Transistors Scan PDF
    2N3719 Central Semiconductor PNP METAL CAN Transistors Scan PDF
    2N3719 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N3719 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3719 Motorola The European Selection Data Book 1976 Scan PDF
    2N3719 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3719 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3719 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3719 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3719 Unknown Transistor Replacements Scan PDF
    2N3719 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3719 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N3719 Unknown Transistor Replacements Scan PDF
    2N3719 Unknown Transistor Replacements Scan PDF
    2N3719 Unknown Transistor Replacements Scan PDF
    2N3719 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    2N3719 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3719

    Abstract: No abstract text available
    Text: 2N3719 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


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    PDF 2N3719 O205AD) 1-Aug-02 2N3719

    2N3171

    Abstract: 2N3022 2N3195 2N3202 2N3183 2N3025 2N3026 2N3172 2N3719 2N3021
    Text: industrial power transistors 128 SILICON PNP TRANSISTORS 5 Amp BREAKDOWN VOLTAGES TYPE NUMBER CASE SIZE 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3171 2N3172 2N3173 2N3174 2N3183 2N3184 2N3185 2N3186 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204 2N3719


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    PDF 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3171 2N3172 2N3173 2N3174 2N3195 2N3202 2N3183 2N3719

    2N3025

    Abstract: 2N3026 2N3021 2N3022 2N3023 2N3024
    Text: SOLID STATE DEVICES, INC PNP POWER & HIGH VOLTAGE Device Type 2N2983 2N2984 2N2985 2N2986 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3250 2N3250A 2N3251 2N3251A 2N3467 2N3468 2N3485 2N3485A 2N3486 2N3486A 2N3634 2N3635 2N3636 2N3637 2N3660 2N3661 2N3719 2N3720


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    PDF 2N3779 2N3780 2N3781 2N3789 2N3790 2N3791 2N3025 2N3026 2N3021 2N3022 2N3023 2N3024

    Untitled

    Abstract: No abstract text available
    Text: <Se.rn.i- Conductor £Ptoducts., inc. 20 STERN AVE. SPRINGFIELD, NEW JERSE\.'07081 2N3719. 2N3720 2N3867. 2N3868 2N6303 3 AMPERE POWER TRANSISTORS PNP SILICON 40.60,80 VOLTS 6 WATTS TELEPHONE: (201 376-2922 /^ (212)227-6005 ,0fe\: (201) 376-8960 •MAXIMUM RA1riNGS


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    PDF 2N3719. 2N3720 2N3867. 2N3868 2N6303 3N17II

    2N3719

    Abstract: No abstract text available
    Text: 2N3719 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


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    PDF 2N3719 O205AD) 17-Jul-02 2N3719

    2N3719

    Abstract: No abstract text available
    Text: 2N3719 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 40V 0.41 (0.016) 0.53 (0.021)


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    PDF 2N3719 O205AD) 19-Jun-02 2N3719

    2N3719

    Abstract: No abstract text available
    Text: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 2N3719 APPLICATIONS: • • • High-Speed Switching Medium-Current Switching High-Frequency Amplifiers FEATURES: • Collector-Emitter Sustaining Voltage:


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    PDF 2N3719 MSC1026 2N3719

    Untitled

    Abstract: No abstract text available
    Text: 2N3719 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)6.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N3719 Freq60M

    2N3025

    Abstract: 2N3021 2N3022 2N3023 2N3026 2N3024 2N3720 2N3719 DSASW0036859
    Text: Device Type 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3719 2N3720 VCEO hFE V Min/Max 30 45 60 30 45 60 40 60 20/60 20/60 20/60 50/180 50/180 50/180 25/180 25/180 @ IC (A) 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 VCE @ IC (A) (sat) Max (V) 1.50 3.0 1.50 3.0 1.50


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    PDF 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3719 2N3720 2N3025 2N3021 2N3022 2N3023 2N3026 2N3024 2N3720 2N3719 DSASW0036859

    2N3775

    Abstract: 2N3202 2N3203
    Text: 8440355 SPACE POWER 89C ELECTRONICS SPACE POWER ELECTRONICS "fll 00105 D T- 3 3 -o/ DlF|fl44[ 3SS QDDD10S 3 Hi-Rel PLANAR POWER 5 W PUP FOR DETAILED S P E C I F I C A T I O N S C O N T A C T E N G I N E E R I N G Breakdown Voltages TYPE CASE V 2N3202 2N3203


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    PDF QDDD10S 2N3202 2N3203 2N3204 2N3719 2N3720 2N3775 2N3776 2N3777 2N3778

    2N3719

    Abstract: 2N3720
    Text: VNE 6^17^05 00013535 ì COMPONENTS PNP 3 AMP 117*" #7-/7 2N3719 2N3720 POWER TRANSISTORS GEOMETRY 505 High VCEOsus •to 60V Low VCEsat - 0.75 Vdc High fT - 60 MHz min. MAXIMUM RATINGS PARAMETER SYMBOL 2N3719 2N3720 UNIT Collector Emitter Voltage Collector Base Voltage


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    PDF 2N3719 2N3720 2N3720 Cto200 Colle4067 0GGb53Jh

    ic 23721

    Abstract: 23732 23721
    Text: Micmsemi PNP Transistors | Part Number ' PNP JANTXV2N3763 JANTXV2N3763L 2N4126 2N3906 2N4403 PN2907A 2N5401 2N2907A 2NS091 2NS093 2N5094 2N5096 2N3053 2N3774 2N3778 2N3245 2N3775 2N3779 2N3776 2N3780 2N3777 2N3781 2N3660 2N3661 2N3782 2N3719 2N3867 2N3867S


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    PDF JANTXV2N3763 JANTXV2N3763L 2N4126 2N3906 2N4403 PN2907A 2N5401 2N2907A 2NS091 2NS093 ic 23721 23732 23721

    2N3719

    Abstract: No abstract text available
    Text: 2N3719 SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3719 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 39 MAXIMUM RATINGS 3.0 A o m < Ie -40 V P d is s 6.0 W @ Te # 25 °C 1.0 W @ Ta # 25 0C Tj -65 0C to +200 0C


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    PDF 2N3719

    Untitled

    Abstract: No abstract text available
    Text: 2N3719 SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3719 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O -39 8.890- 9.398 MAXIMUM RATINGS 3.0 A lc V T -40 V ce P diss (6 0 9 6 - 6 .6 0 4 ) stg SEATING PLANE


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    PDF 2N3719 2N3719 -40to100

    2N3719

    Abstract: 2N3720 11779
    Text: CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.V. 11779 PNP3AMP 2N3719 2N3720 POWER TRANSISTORS GEOMETRY 505 • High VCEOsus - to 60V • Low VCEscrt-0.75 Vdc • High fT-60MHz min. MAXIMUM RATINGS PARAMETER Collector Emitter Voltage Collector Base Voltage


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    PDF 2N3719 2N3720 fT-60MHz 2N3720 100mA. 100mA 500mA. 30MHz 100KHzto 11779

    2N3719

    Abstract: 2N3720
    Text: T Y P ES 2N3719, 2N3720 P -N -P S ILIC O N PO W ER T R A N S IS T O R S TYPES 2N3719, 2N 3720 BULLETIN NO. DL-S 7111606, DECEMBER FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP501, TIP502 Max t0ff of 0.4 ,us at lc = 1 A


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    PDF 2N3719, 2N3720 TIP501, TIP502 2N3719

    TIP501

    Abstract: No abstract text available
    Text: T Y P ES TIP501, TIP502 N -P -N SILIC ON P O W ER T R A N S IS T O R S 0 H C< r r m FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH 2N3719, 2N3720 w j j m z ^ • Max tQff of 0.4 at lc = 1 A • 3-A Rated Continuous Collector Current


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    PDF TIP501, TIP502 2N3719, 2N3720 TIP501

    2N3720

    Abstract: 2n3867
    Text: MOTOROLA SC XSTRS/R 12E D | F b 3 fc,7 2 S 4 Q 0 ÛMM 7 7 5 | 2N3719, 2N3720 2N3867, 2N3868 2N6303 MOTOROLA SEMICONDUCTOR TECHNICAL DATA SILICON PNP POWER TRANSISTORS . designed for high-speed, medium-current switching and highfrequency amplifier applications.


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    PDF 2N3719, 2N3720 2N3867, 2N3868 2N6303 2N3719 2N3867 2N3720 2n3867

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    2N5286

    Abstract: 2N3171 2N3172 2N3196 2N3173 2N3174 2N3184 2N3183 2n5601 TO111 package
    Text: u l i J E L E C T R O N I C S , INC. -13 COLLECTOR CURRENT = 5 AMPS PNP TYPES—Continued Device No 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N3185 2N318* 2N3187 2N3188 2N3189 2N3190 2N3195 2N3196 2N3197 2N3198 2N3202 2N3203 2N3204


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    PDF 2N3171 2N3172 2N3173 2N3174 2N3175 2N3176 2N3177 2N317S 2N3183 2N3184 2N5286 2N3196 2n5601 TO111 package

    BF357

    Abstract: BF195 BF594 BF197 BF194 BF194 equivalent BF597 2N4996 BF195 equivalent BC516 equivalent
    Text: Silect High Frequency Transistors TT MHz Sj o < Maximum Ratings Device Type hFE Case outline B V PTOT Ic VCE in brackets CBO ic V V mA mW min. max. mA V 1 10 BF594 (9) 30 20 30 250 65 220 Case Outlines BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38


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    PDF BF594 BF594, BF194 BF595 BF195 BF597 BF197 2N4996 O-111 BF357 BF195 BF594 BF197 BF194 BF194 equivalent BF597 2N4996 BF195 equivalent BC516 equivalent

    JAN2N3996

    Abstract: 2N4307 ISM22 2n3183
    Text: A P 'e l e c t r o n COLLECTOR CURRENT = 5 AMPS NPN TYPES • VCEO sus V olts VEBO V olts hFE Min Max ■ Ft Vc e ic V c e (sat) Vb e (sat) @ Ic @ IB Mt 80 8 20 60 5 1 1 .2 5 2 1 .1 30 80 8 40 120 5 1 1. 25 2 1 .1 30 60 80 80 80 80 8 8 5 5 5 40 40 100 100


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    SDT423

    Abstract: No abstract text available
    Text: _ 8 3686 02 SO LITRON D EV IC ES INC_ 95D 02758 SOLITRON DEVICES INC T5 D — T"“- 3 3 - 0 / Ïm F | ù3bflbD2 00D57SA S | T i - t^WÊÊÊFBlË • P L A N A R P O W ER TR A N S IS TO R S % 5m O < M M DEVICE TYPE hpE MIN/MAX @ ic A


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    PDF 00D57SA 2N2150 2N2151 2N3788 2N3917 2N3918 O-111 2N3025 2N3026 SDT423

    2N3017

    Abstract: No abstract text available
    Text: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984


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    PDF 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N3017