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    2N2911 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2911 API Electronics Short form transistor data Short Form PDF
    2N2911 API Electronics Transistor Selection Guide Scan PDF
    2N2911 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2911 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2911 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2911 Unknown GE Transistor Specifications Scan PDF
    2N2911 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2911 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N2911 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N2911 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2911 Pirgo Electronics Power Transistors in TO-5 / TO-8 Scan PDF
    2N2911 Silicon Transistor JAN / Consumer / Military / Industrial / Automotive / Hi-Rel Scan PDF
    2N2911 Silicon Transistor Industrial Grade Power Transistors Scan PDF
    2N2911 Solid Power POWER TRANSISTORS - TO-5, TO-8 Scan PDF
    2N2911 Solid Power Power Transistors in TO-5 / TO-8 Package Scan PDF

    2N2911 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK847

    Abstract: 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794
    Text: STI Type: 2SK696 Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 4.0 Trans Conductance Mhos: 1.2 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: TO-247


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    PDF 2SK696 O-247 2SK719 2SK696A O-205AD/TO-39: 2N3374 2N3352 2SK847 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794

    TIP310

    Abstract: B0939 B0941 D510 B0581
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 35 40 2N6417 2SC3567L 2S036 2SC3567K BUW64B BUW64B BUW64B B02410 2Nl648 BOT290F 40912 2N6263 2N2984 BOT31DF TIP310 2N1650 B0941 B0941 50 tsU~41 ~emel~D PhilipsElec AmperexElec See Index Fujitsu Ltd


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    PDF BOT31CF MJE31C B0581 2S035 2SC3567M B0939 B0939F TIP310 B0941 D510

    2N3017

    Abstract: No abstract text available
    Text: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984


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    PDF 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N3017

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    pnp 900v

    Abstract: SRSP5014 L3045 2N5415 2N1480 2N1481 2N1482 2N2911 2N5784 2N5786
    Text: Silicon power transistors NPN TO-5 = 1.0 to 3.5A fT = 1.0 to 40 MHz V ce o is u s = 4 0 to 9 0 0 V I if e Type# PNP Comple­ VcEO SUS) ment (Volts) @ Ic/VcE (Min-Max @ A /V ) VcE(SAT) @ Ic / I b (V @ A/A) Vbe @ Ic/VcE (V @ A/V) Pd @ ( lie Cob fr Te = 25°C


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    PDF 2N1479 2N1480 2N1481 2N1482 2N5784 2N5785 2N5786 STC40347 STC40348 SRS3004M pnp 900v SRSP5014 L3045 2N5415 2N2911

    2N2035

    Abstract: 2N2033 2N1479 2N2034 2n1117 2N1116 2N1480 2N1481 2N1482 2N1700
    Text: 8365700 S O L ID POWER CORP 95C 0 0 0 9 8 SOLID POWER CORP T5 D 'T>~$r&-0/ Dlf| fl3L.5700 DODODTfl 4 POW ER TR A N SISTO R S V Sat Test Voltages Conditions Ic Ib I ebo V ce V be A A ma V V 6 5.0 4.0 .5 .05 100 .2 .02 100 PT TYPE NO. 2N1116 TO-5 M AXIM UM RATINGS


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    PDF 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N1700 2N2033 2N2034 2N1067 2N2035 2n1117 2N1116

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    PDF Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29

    2N2753

    Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
    Text: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068


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    PDF 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N2753 S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110

    2N2035

    Abstract: 2n1117 2n1700 2N1701 2N1116 2N1479 2N1480 2N1481 2N1482 2N2033
    Text: POWER TRANSISTORS TYPE NO. TO-5 PT MAXIMUM RATINGS @ 25°C 135351Î3S531135?31 le V V V A Watts , «bV a Ic hre MIN MAX Sat Voltages V ce Vk A V V V Test Conditions Ic IB I ebo A A ma 2N1116 .6 60 60 6 .8 40 150 .5 6 5.0 4.0 .5 .05 "Töo 2N1117 .6 60 60 6


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    PDF 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N1700 2N2033 2N2034 2N2858 2N2035 2n1117 2N1701 2N1116

    AP1085

    Abstract: 2N2033 AP1089 2N2034 2N1701 2N2034A 2N2035 2N2304 2N2828 2N2829
    Text: A P I E L E C T R ON I C S I NC 00^3592 A P I 2b ELECTRONICS dF | DDMBSTE D OO DS n INC □ V^T^S^-ÒS 26C 00219 C O L L E C T O R C U R R E N T = 2 A M P S P N P T Y P E S - C O N T IN U E D D evice No C ase A P I 090 A P I 105 A P I 106 A P I 107 T O -66


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    PDF 2N1701 2N5782 AP1029 AP1047 AP1085 AP1089 2N5786 2N2033 2N2034 2N2034A 2N2035 2N2304 2N2828 2N2829

    2N2033

    Abstract: 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N1700 2N2034 2N2858
    Text: POWER TRANSISTORS TYPE NO. TO-5 PT MAXIMUM RATINGS @ 25°C 135351Ì3S531135?31 le V V V A Watts , hre MIN MAX «ì> le Va A V Sat Voltages Test Conditions V ce Vk le lB I ebo V V A A ma 2N1116 .6 60 60 6 .8 40 150 .5 6 5.0 4.0 .5 .05 "Too 2N1117 .6 60 60 6


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    PDF 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N1700 2N2033 2N2034 2N2858 2N1116 2N1117

    2N2304

    Abstract: 2N2858 2N1479 2n1117 2N2308 2N1116 2N1480 2N1481 2N1482 2N1700
    Text: P I ELECTRONICS INC blE D • □OHBS'lE 000027b bbl ■ AMC 7-Jl-OZ" POWER TRANSISTORS w TO-5 TO-8 4 TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS Ic B V cb o B V ceo B V ebo V A V V hFE Sat Voltages 8 MIN MAX Ic A V V V V be V ce V ce Test Conditions Ib lEBO


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    PDF 000027b 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N1700 2N2033 2N2034 2N2304 2N2858 2n1117 2N2308 2N1116

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2n1701

    Abstract: 2N2035
    Text: POWER TRANSISTORS TYPE NO TO-5 PT MAXIMUM RATINGS @ 25°C •ü'ÆÜl f:fKT51 l:WT51 Ic A V V V Watts 2N1116 .6 60 60 2N1117 60 60 2N1479 .6 5.0 60 40 2N1480 5.0 100 55 2N1481 5.0 60 2N1482 5.0 2N1700 6 I Hfe , A V V ce V VB£ V Ic MIN MAX Sat Voltages <iD


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    PDF fKT51 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N1700 2N2033 2N2034 2n1701 2N2035

    NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Abstract: 2N3021 2n3223 2N3589 NPN 20 Amps POWER TRANSISTOR to63 MT27 NPN 90 Amps POWER TRANSISTOR to63 2N3025 2NXXXX TO63 package
    Text: r ^ 3 *t3 SILICON TRANSISTOR C O R P _ 8 8 0 0 0 7 9 2 DE lflES40ea O O O O T T S b flfl NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type Polarity lcMax Amps VCECKSUS) Volts Package Type Polarity . ^ 33^77 lc Max Amps VCEO(SUS)


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    PDF flES40ea rr33T77 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 NPN 200 VOLTS 20 Amps POWER TRANSISTOR 2N3021 2n3223 2N3589 NPN 20 Amps POWER TRANSISTOR to63 MT27 NPN 90 Amps POWER TRANSISTOR to63 2N3025 2NXXXX TO63 package

    Untitled

    Abstract: No abstract text available
    Text: POWER TRANSISTORS TYPE NO. TO-5 PT MAXIMUM RATINGS @ 25°C 135351Ì3S531135?31 le V V V A Watts , hre MIN MAX «ì> le Va A V Sat Voltages Test Conditions V ce Vk le lB I ebo V V A A ma 2N1116 .6 60 60 6 .8 40 150 .5 6 5.0 4.0 .5 .05 "Too 2N1117 .6 60 60 6


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    PDF 3S531135 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N2304 2N2308 GG0040b

    Untitled

    Abstract: No abstract text available
    Text: A P I ELECTRONICS INC 00^3592 A P I St ELECTRONICS d ËT| INC Q0M35T5 0000211 0 Q-~f^33-0 26C 00219 COLLECTOR CURRENT = 2 AMPS PN P TYPES - CONTINUED Device No C ase VCBO Volts AP1090 AP1105 AP1106 AP1107 TO -66 TO -4 6 TO -5 TO -66 125 140 140 140 VCEO sus)


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    PDF Q0M35T5 AP1090 AP1105 AP1106 AP1107 2N5786

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    Untitled

    Abstract: No abstract text available
    Text: POWER TRANSISTORS # TO-5 PT TYPE NO. 2N1116 MAXIMUM RATINCS B V cbo B V ceo B V ïb o le V V A V Watts hFE @ 25°C .6 60 60 6 .8 MIN MAX 150 40 Sat Voltages Test Conditions le Ib A A D le V CE A V Va V V be V .5 5.0 4.0 .5 .05 100 .2 .02 100 6 Iebo ma 2N1117


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    PDF 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N1700 2N2033 2N2034 2N2858