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    Vishay Sfernice RMK22N357RF

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    DigiKey RMK22N357RF Tray 100
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    Susumu Co Ltd RG2012N-3572-W-T5

    RES SMD 35.7KOHM 0.05% 1/8W 0805
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    Susumu Co Ltd RG2012N-3573-B-T5

    RES SMD 357K OHM 0.1% 1/8W 0805
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    Susumu Co Ltd RG2012N-3570-W-T1

    RES SMD 357 OHM 0.05% 1/8W 0805
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    Susumu Co Ltd RG2012N-3570-W-T5

    RES SMD 357 OHM 0.05% 1/8W 0805
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    2N357 Datasheets (165)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N357 Germanium Power Devices Germanium NPN Transistors Scan PDF
    2N357 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N357 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N357 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N357 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N357 Unknown Vintage Transistor Datasheets Scan PDF
    2N357 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N357 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N357 Unknown GE Transistor Specifications Scan PDF
    2N357 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N357 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N357 RCA RCA Transistor and Diode Data Scan PDF
    2N3570 Advanced Semiconductor NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    2N3570 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N3570 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    2N3570 Ferranti Semiconductors Metal Can Transistors (Short Form) Scan PDF
    2N3570 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3570 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3570 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3570 Unknown Shortform Electronic Component Datasheets Short Form PDF
    ...

    2N357 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2N3578 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)20 I(D) Max. (A)50m I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)15n @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF 2N3578

    Untitled

    Abstract: No abstract text available
    Text: 2N3577 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)85 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N3577 Freq10M

    Untitled

    Abstract: No abstract text available
    Text: 2N3574 Transistors P-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)18m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)600p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF 2N3574

    2SA1283D

    Abstract: bcw56a Motorola 2N3809 LOW-POWER SILICON PNP TO77
    Text: LOW-POWER SILICON PNP Item Number Part Number 5 10 BC303-6 BC303-6 2N3579 KT214Gl BCW89 BCW89 BCW89 BCW89R BCW89R BCW89R ~~XIJ2A -15 20 25 30 - 35 40 2N4413A BSR30 BSR30 BCW56A PB6014S 2SBll16AL BC488A18 BC488A5 -SO 60 70 -80 85 -90 95 ~eelnClex See Index


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    PDF BC303-6 2N3579 KT214Gl BCW89 BCW89R 2SA1283D bcw56a Motorola 2N3809 LOW-POWER SILICON PNP TO77

    Untitled

    Abstract: No abstract text available
    Text: 2N3570 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    PDF 2N3570

    Untitled

    Abstract: No abstract text available
    Text: 2N3576 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)20 I(C) Max. (A)200m Absolute Max. Power Diss. (W)360m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A).01ux @V(CBO) (V) (Test Condition)


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    PDF 2N3576 Freq400M

    Untitled

    Abstract: No abstract text available
    Text: 2N357 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N357 Availability Online Store Diodes


    Original
    PDF 2N357 2N357 STV3208 LM3909N

    BEL187

    Abstract: NA22XX BC262A LOW-POWER SILICON PNP 2SA523 NA22XH
    Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO -5 -10 -15 20 Sanyo Elect Sanyo Elect NthAmerSemi CrimsonSemi CentralSemi NthAmerSemi V/O Electro Sanyo Elect Sanyo Elect Sanvo Elect ~~:~~~8U ~anyo ~Iect BEl187 2N3576 2N5455 2N5056 ST5771-1 ST5771-2


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    PDF 2SB1296 2SB1295 BFX12 BFX13 KT361 2SB1118S 2SB808 2SB1118E BEL187 NA22XX BC262A LOW-POWER SILICON PNP 2SA523 NA22XH

    Untitled

    Abstract: No abstract text available
    Text: 2N3573 Transistors P-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)6.0m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)600p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


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    PDF 2N3573

    2n3570

    Abstract: Transistor D 798
    Text: 2N3570 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO- 72 MAXIMUM RATINGS IC 50 mA VCB 30 V VCE 15 V VEB 3.0 V PDISS 200 mW @ TC = 25 C TJ -65 C to +200 C


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    PDF 2N3570 2N3570 Transistor D 798

    Untitled

    Abstract: No abstract text available
    Text: 2N3572 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


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    PDF 2N3572

    Untitled

    Abstract: No abstract text available
    Text: 2N3571 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original
    PDF 2N3571

    BF178

    Abstract: bf179 BFT79 BF177 2N2219 2N2905 bf338 BFQ36 BC325 2N3571 2N3572
    Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450


    OCR Scan
    PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BFQ36 BF257/8/9 BFQ37 BF178 bf179 BFT79 BF177 2N2219 2N2905 bf338 BC325

    F13S

    Abstract: BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent 2N3570
    Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450


    OCR Scan
    PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 High59 BS9365 F13S BFQ35 BC177 pnp transistor transistor bc303 transistor t05 BF179 2n3440 equivalent bc304 equivalent bc143 equivalent

    C736

    Abstract: C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633
    Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *Tt i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450


    OCR Scan
    PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 BS9300 2N2219A C736 C495 transistor bc303 equivalent 2N2222A 026 C735 bc143 equivalent bc143 C644 equivalent transistor 2N1711 transistor c633

    2N290

    Abstract: bc143 2N3570 2N3571 2N3572 2N4252 2N4253 2N918 BFT79 T018
    Text: Metal Can Device Type 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0-48 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T 072 T 072 T 072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200


    OCR Scan
    PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 High59 BS9365 2N290 bc143 BFT79 T018

    2n3571

    Abstract: 2N3570 2N3572
    Text: TY P ES 2N3570, 2N3571. 2N3572 N-P-N S ILIC O N TR A N S IS TO R S B U L L E T IN N O . D L -S 7 3 1 1 9S 6, M A R C H 1973 FOR LOW-NOISE VH F/U H F AM P LIFIE R , OSCILLATOR, AND MIXER APPLICATIONS 2N3570 Features: • Low Noise Figure . . . 7 dB Max at 1 GHz


    OCR Scan
    PDF 2N3570, 2N3571. 2N3572 2N3570 2n3571

    2N372A

    Abstract: 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052 2N3501 2N3506
    Text: SEMELAB[ MflE D • A1331B7 DDDDMBb 02 ^ ■ SMLB SEMELAB LTDT»3.7«0l HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code 2N3501 2N3506 2N3507 2N3508 2N3509 2N3511 2N3571 2N3583 2N3584 2N3585 2N3634 2N3635 2N3636 2N3637 2N3665


    OCR Scan
    PDF 2N3501 2N3506 2N3507 2N3508 l/10m 2N3509 2N3511 15min 2N3571 2N372A 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052

    germanium transistors NPN

    Abstract: 2N711 2n2430 2N388 2N1304 2N1892 2N705 2N828 2N1308 2N388A
    Text: GERMANIUM NPN TRANSISTORS Type Yc.O V Max YEBO V Max Ki V Max h rc IcBO @ Y CB V Max Typical @/r rn.-i Cob Pf Max fab MHZ Min 14' 6.0 14' 9.0 Pack Outline Power Dissipation @25°C MW NPN 2N356A 2N357 2N357A 2N358 2N358A 30 20 30 20 30 20 20 20 20 20 20 15


    OCR Scan
    PDF 2N356A 2N357 2N357A 2N358 2N358A 2N366 2N377 2N377A 2N385 germanium transistors NPN 2N711 2n2430 2N388 2N1304 2N1892 2N705 2N828 2N1308 2N388A

    2N4252

    Abstract: 2N3570 2N3571 pnp hfe 70 BFT69 2N3572 048J 2N3571 NPN bc143 2N918
    Text: Metal Can 0-76 Case BV CBO V V V 30 25 25 15 15 13 3 3 3 0 -4 8 0 2N3570 2N3571 2N3572 *T t i 4-95JÍ -12-7 h min I—-5 -3 Dimensions in mm NPN NPN NPN T072 T072 T072 Maximum ratin as BV BV CEO EBO hFE1 • mA min. max. f 50 50 50 5 5 5 150 200 300 1000 450


    OCR Scan
    PDF 4-95J0 2N3570 2N3571 2N3572 2N918 2N4252 2N4253 High15 -150nS 240nS pnp hfe 70 BFT69 048J 2N3571 NPN bc143

    2n3576

    Abstract: kc 140
    Text: T Y P E 2N3576 P-N-P S ILIC O N TR A N S IS TO R B U L L E T I N NO. DL-S 6 4 5 9 1 6 , A U G U S T 1 9 6 4 DESIGNED FOR HIGH-SPEED SWITCHING APPLICATIONS • Low Guaranteed VCE sat — 0.5 v max at 100 ma • High fT — 400 Me min at 10 v, 10 ma • Low Total Switching Time — 80 nsec max at 10 ma


    OCR Scan
    PDF 2N3576 kc 140

    2N3571

    Abstract: MA42141 2N5054 2n5053 2N5651
    Text: Silicon Low Noise Bipola Transistors MODEL NUMBER PAGE 2N 2857 2N 3570 2N3571 11-3 11-3 11-3 2N 3572 2N 3683 11-3 11-3 11-3 2N 3839 2N 38 80 . 2N 3953 2N5031 2N 5032 2N5053 2N5054 2N 51 79 2N5651 2N 5662 11-3 11-3 .11-3 11-3 11-3 11-3


    OCR Scan
    PDF 2N3571 2N5031 2N5053 2N5054 2N5651 2N6618 MA42001 A42003 A42004 MA42005 MA42141

    Untitled

    Abstract: No abstract text available
    Text: GERMANIUM NPN TRANSISTORS Type y' CBO y yEBO y M ax M ax Ki 1 CBO @y c B y M ax M ax y mA Typical Cob Pf M ax fa b MHZ M in 14' 6.0 14' 9.0 Pack Outline Power Dissipation @ 25°C MW NPN 2N356A 2N357 2N357A 2N358 2N358A 30 20 30 20 30 20 20 20 20 20 20 15 20


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    PDF 2N356A 2N357 2N357A 2N358 2N358A 2N366 2N377 2N377A 2N385

    2N3511

    Abstract: No abstract text available
    Text: SEMEC a B LTD ^ B133167 DDDDQlb • SMLB T - ^ 7 '« / 2N3420 2N3421 2N3421LP 2N3425 2N3439 ■' HI-REL HI-REL HI-REL HI-REL CECC NPN NPN NPN NPN NPN 2N3440 2N3440S 2N3467 2N3508 2N3509 CECC CECC HI-REL HI-REL HI-REL NPN NPN PNP NPN NPN 2N3511 2N3571 2N3583


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    PDF B133167 20min 15min 30min 60min 300typ 150typ 600typ 2N3511