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    2N358 Search Results

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    2N358 Price and Stock

    Microchip Technology Inc 2N3585

    NPN POWER SILICON TRANSISTORS
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    Microchip Technology Inc 2N3584

    NPN POWER SILICON TRANSISTORS
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    Microchip Technology Inc 2N3583

    TRANS NPN 175V 1A TO66
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    Microchip Technology Inc 2N3585P

    POWER BJT
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    Microchip Technology Inc JAN2N3584

    TRANS NPN 250V 2A TO66
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    Microchip Technology Inc JAN2N3584 109 36 Weeks
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    2N358 Datasheets (260)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N358 Germanium Power Devices Germanium NPN Transistors Scan PDF
    2N358 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N358 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N358 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N358 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N358 Unknown GE Transistor Specifications Scan PDF
    2N358 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N358 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N358 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N358 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N358 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N358 Unknown Vintage Transistor Datasheets Scan PDF
    2N358 RCA RCA Transistor and Diode Data Scan PDF
    2N3580 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3580 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3580 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3580 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3580 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3580 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3580 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ...

    2N358 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3585

    Abstract: 2N3584 2N3584 JAN transistor 2n3584 MIL-PRF-19500/384
    Text: TECHNICAL DATA 2N3584 JAN, JTX, JTXV 2N3585 JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/384 NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage


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    PDF 2N3584 2N3585 MIL-PRF-19500/384 2N3584 2N3585 O-213AA) 2N3584 JAN transistor 2n3584 MIL-PRF-19500/384

    2N3583

    Abstract: No abstract text available
    Text: 2N3583 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


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    PDF 2N3583 O213AA) 1-Aug-02 2N3583

    2N3584

    Abstract: 2N3584 JANTX
    Text: 2N3584 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


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    PDF 2N3584 O213AA) 1-Aug-02 2N3584 2N3584 JANTX

    2N3585

    Abstract: No abstract text available
    Text: 2N3585 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


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    PDF 2N3585 O213AA) 1-Aug-02 2N3585

    2N3584

    Abstract: 2N3585 transistor 2n3584
    Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/384 Devices Qualified Level 2N3584 JAN JANTX JANTXV 2N3585 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Base Voltage Emitter-Base Voltage Base Current


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    PDF MIL-PRF-19500/384 2N3584 2N3585 2N3584 2N3585 transistor 2n3584

    Untitled

    Abstract: No abstract text available
    Text: 2N3583 Complementary medium-power high voltage power transistor 6.1. 1 of 1 Home Part Number: 2N3583 Online Store 2N3583 Diodes C o m plem entary m edium - po w er high v o ltage po w er t rans is to r


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    PDF 2N3583 com/2n3583 2N3583

    vbe 10v, vce 500v NPN Transistor

    Abstract: 2N3585
    Text: 7516 Central Industrial Drive Riviera Beach, Florida 33404 PHONE: 561 842-0305 FAX: (561) 845-7813 2N3585 APPLICATIONS: • • • Off-Line Inverters Switching Regulators Motor Controls • • • Deflection Circuits DC-DC Converters High Voltage Amplifiers


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    PDF 2N3585 MSC1057 vbe 10v, vce 500v NPN Transistor 2N3585

    Untitled

    Abstract: No abstract text available
    Text: 2N3583 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a


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    PDF 2N3583 O213AA) 30-Jul-02

    Untitled

    Abstract: No abstract text available
    Text: 2N3585 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)500 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)35 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N3585 Freq10M

    200V transistor npn 10a

    Abstract: transistor 200V 100MA NPN 2N3584 2N3583 200v 10a npn transistor 200V 100MA NPN
    Text: 2N3583 2N3584 2N3585 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER


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    PDF 2N3583 2N3584 2N3585 500mA 200mA, 100mA, 200V transistor npn 10a transistor 200V 100MA NPN 200v 10a npn transistor 200V 100MA NPN

    Untitled

    Abstract: No abstract text available
    Text: 2N358 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)12 V(BR)CBO (V)20 I(C) Max. (A)500m Absolute Max. Power Diss. (W)100m Maximum Operating Temp (øC)85þ I(CBO) Max. (A)5.0u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain.20 h(FE) Max. Current gain.50


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    PDF 2N358

    2N3738 equivalent

    Abstract: 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420
    Text: Power Transistors TO-66 Case TYPE NO. NPN 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 PNP 2N6049 2N6420 2N6421 2N6422 2N3740 2N3740A 2N3741 2N3741A 2N3766 2N3767 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4296 2N4298 2N4299 2N4910 2N4911 2N4912


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    PDF 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420 2N6421 2N3738 equivalent 2N3054 2N3054A 2N3583 2N3584 2N3585 2N3738 2N3739 2N6049 2N6420

    2N3585

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2N3585 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Continuous collector current-IC=2A ·Power dissipation -PD=35W @TC=25 ·VCE SAT =0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS ·High speed switching and linear amplification


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    PDF 2N3585 2N3585

    Untitled

    Abstract: No abstract text available
    Text: 2N3585 COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE P. 1 of 1 Home Part Number: 2N3585 Online Store 2N3585 Diodes C O M PLEM ENTARY Transistors M EDIUM - PO WER HIG H VO LTAG E PO WER TRANSISTO RS Integrated Circuits


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    PDF 2N3585 com/2n3585 2N3585

    2n3441

    Abstract: 2N3442 2N3439 2N3440 2N3583 2N3584 2N3585
    Text: HIGH VOLTAGE NPN HIGH VOLTAGE SELECTOR CHART TO-66 2-5A TO-3 10A 140 2N3441 2N3442 175 2N3583 TO-39 <2A Package •c V CE0 Volts 2N3440 250 2N3584 2N3585 300 2N3439 350 TABLE 5 - NPN HIGH VOLTAGE TRANSISTORS The transistors shown ¡n this table are characterised for high voltage operation in industrial, commercial


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    PDF 2N3441 2N3442 2N3583 2N3440 2N3584 2N3585 2N3439 2N3442 2N3439 2N3583 2N3584 2N3585

    mje 3001

    Abstract: MJ3583 2N3583 MOTOROLA MJ3585 MJ3701 2N3583 MJ2253 MJ3760 MJ3761 transistor SE 431
    Text: MJ3583 thru MJ3585 SILICON MJ3701 (SILICON) p o r specifications, §ee 2N3583 Data. For Specifications, See MJ2253 Data. MJ3760 (silicon) MJ3761 H O RIZO N TAL D E FL E C T IO N SILICO N TR A N SISTO R S 6.0/8.0 AM PERE T R IP L E D IFF U S E D POWER TR A N S IS TO R S


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    PDF MJ3583 MJ3585 2N3583 MJ3701 MJ2253 MJ3760 MJ3761 MJ3760 MJ3761 16-COLLECTOR-BASE mje 3001 2N3583 MOTOROLA MJ3585 MJ3701 transistor SE 431

    X9116WM8I-2.7T1

    Abstract: 2N6315
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 Vceo Ic sus (max) VOLTS AMPS ^FE IC/ Vce (min/max @ A/V) fx (MHz) [email protected]/.05 75 3 1 [email protected]/10 5@1/.125 35 10 300h 5 25-100@1/10 .75@1/.125 35 10 2N3585A 400h 5 25-100@1/10 .75@1/.125 35 10 2N3738


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    PDF 2N3054A 2N3583 2N3584A 2N3585A 2N3738 2N3739A 2N3766A 2N3767A 2N3878 2N3879A X9116WM8I-2.7T1 2N6315

    2N6315

    Abstract: 2n3054a
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 PA C K A G E D E V IC E T Y PE ^C E O sus V O LTS Ic (m ax) AM PS NPN TO-66 2N 3054A 55 4 25-100@ .5/4 2N3583 250h 1 2N 3584 300h 2N 3585 hfE@ i< y v Ce (m in/m ax @ A/V) ^CE<s»l) Pr D * W A TTS fr


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    PDF 2N3583 2N4911 2N5661 2N5665 2N6315 2N6373 2N6315 2n3054a

    2N3584

    Abstract: No abstract text available
    Text: 2N3584 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3584 is Designed for General Purpose High Voltage Amplifier and Switching Applications PACKAGE STYLE TO - 66 2.0 A 250 V o m lc < MAXIMUM RATINGS INCHES Pd is s 35 W @ Tc # 25 °C Tj -65 °C to +200 °C


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    PDF 2N3584 2N3584 RAD8-89

    Untitled

    Abstract: No abstract text available
    Text: m 2N3585 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3585 is Designed fo r G eneral P urpose High V oltage A m p lifie r and Switching A pplications. PACKAGE STYLE T O -66 MAXIMUM RATINGS INCHES lc 2.0 A V ce 300 V P diss 35 W @ Tc = 25 °C Tj -65 °C to +200 °C


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    PDF 2N3585 2N3585

    2N4240

    Abstract: 2N3583 2N3584 2N3585 2N6420 2N6421 2N6422 2N6423 2N6420-2N6421
    Text: COMPLEMENTARY MEDIUM-POWER HIGH VOLTAGE POWER TRANSISTORS NPN 2N3583 2N3584 2N3585 2N4240 . designed for high-speed switching and linear amplifier application for high-voltage operational amplifiers,switching regulators,convertors, deflection stages and high fidelity amplifiers.


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    PDF 2N3583 2N6420 2N3584 2N6421 2N3585 2N6422 2N4240 2N6423 2N6420-2N6421

    npn transistor to-66

    Abstract: 2N3584A TRANSISTOR 751 2N3054A 2N3879A 2N3584 2n3767 2N3583 2N3738 2N3878
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 V ceo Ic DEVICE TYPE sus VOLTS (max) AMPS NPN TO-66 2N3054A 55 4 [email protected]/4 2N3583 250h 2N3584A T ir ^ * Tc = 25UC h V»CER VcE(j»t) @ I c^Ib (V@ A/A) l*FE@ V V ce PACKAGE (min/max @ A/V) p • D*


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    PDF 2N3054A 2N3583 2N3584A 2N3585A 2N3738 2N3739A 2N3766A 2N3767A 2N3878 2N3879A npn transistor to-66 TRANSISTOR 751 2N3584 2n3767

    2N3583

    Abstract: 2N4240 2N36 2N35
    Text: 2N3583 2N3584* 2N3585* 2N4240 *also available as i? t/V E sr JAN, JANTX, JANTXV HIGH-VOLTAGE SILICON N-P-N TRANSISTORS For High-speed Switching and Linear-Amplifier Applications Features • 100-percent tested to assure freedom from second breakdown in both forwardand reverse-bias conditions when operated within specified limits


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    PDF 2N3583 2N3584* 2N3585* 2N4240 100-percent 2N3583, 2N4240 2N36 2N35

    2N3534

    Abstract: 2N3583 2N3584 2N3533 2N3563 2N3503 2N3585 2n358s N3584 2N3584 NPN
    Text: 2N3583 2N3584 2N3585 NPN SILICON HIGH VOLTAGE POWER TRANSISTORS 35 watts at 25°C 5A peak collector current OUTLINE DIMENSIONS mm TO-66 915 min. - — - — 1 90 max. 1 1 Î 12.65 max. 0.85 0.70 T — — 8 .64 max ABSOLUTE MAXIMUM RATINGS v cso Collector-base voltage {lE — 0)


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    PDF 2N3583 2N3584 2N3585 2N3503 2N3585 2N3S84 2N358S 2N35S3 2N3534 2N3533 2N3563 N3584 2N3584 NPN