HYUF6404D
Abstract: HYUF6404
Text: HY62UF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02
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HY62UF16404D
256Kx16bit
HYUF6404D
HYUF6404D
HYUF6404
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Untitled
Abstract: No abstract text available
Text: HY62UF16406C Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Final 01 Changed Logo Mar.23.2001 Final 02 Changed Isb1 values
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HY62UF16406C
256Kx16bit
16bits.
HYUF6406C
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Untitled
Abstract: No abstract text available
Text: HY62LF16406C Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Final 01 Changed Logo Mar.23.2001 Final 02 Changed Isb1 values
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HY62LF16406C
256Kx16bit
HYQF6406C
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VDR 0047
Abstract: No abstract text available
Text: HY62KF16403E Series 256Kx16bit full CMOS SRAM Document Title 256K x 16bit 2.7 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial Draft Dec.26.2001 Preliminary 0.1 Absolute Maximum Ratings - Vcc changed -0.3V to 4.6V -> -0.3V to 4.0V
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HY62KF16403E
256Kx16bit
16bit
HY62KF6403E
HY62KF1ical
44pin
400mil
VDR 0047
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Untitled
Abstract: No abstract text available
Text: HY62SF16406E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2001 Preliminary 01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002
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HY62SF16406E
256Kx16bit
HY62SF1S
HYUF6406E
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Untitled
Abstract: No abstract text available
Text: HY62SF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02
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HY62SF16404D
256Kx16bit
HYSF6404D
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Untitled
Abstract: No abstract text available
Text: HY62UF16401 Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16401 is a high speed, low power and 4M bit full CMOS SRAM organized as 262,144 words by 16bit. The HY62UF16401 uses high performance full CMOS process technology and designed for high speed low power circuit
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HY62UF16401
256Kx16bit
16bit.
48ball
5M-1994.
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Untitled
Abstract: No abstract text available
Text: HY62QF16406D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any
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HY62QF16406D
256Kx16bit
16bits.
HYQF6406D
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Untitled
Abstract: No abstract text available
Text: HY62QF16404C Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.7 ~ 3.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Jul.06.2000 Preliminary 01 Part No Change 100ns Part Delete Oct.30.2000
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HY62QF16404C
256Kx16bit
100ns
HYQF6404C
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Untitled
Abstract: No abstract text available
Text: HY62QF16403A Series 256Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62QF16403A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62QF16403A uses high performance full CMOS process technology and is designed for high speed and low power
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HY62QF16403A
256Kx16bit
16bits.
48-ball
48ball
5M-1994.
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Untitled
Abstract: No abstract text available
Text: HY63V16400A 256Kx16bit CMOS FAST SRAM Preliminary DESCRIPTION FEATURES The HY63V16400A is a 4,194,304-bit high-speed SRAM organized as 262,144 words by 16 bits. The HY63V16400A uses sixteen common input and output lines and has an output enable pin which operates faster than address access time at
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HY63V16400A
256Kx16bit
HY63V16400A
304-bit
44pin
400mil
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Untitled
Abstract: No abstract text available
Text: HY62UF16401A Series 256Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16401A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62UF16401A uses high performance full CMOS process technology and is designed for high speed and low power
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HY62UF16401A
256Kx16bit
16bits.
48-ball
48ball
5M-1994.
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HY62SF16404E
Abstract: HY62SF16404E-I
Text: HY62SF16404E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2001 Preliminary 01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002
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HY62SF16404E
256Kx16bit
HY62SF1
HYSF6404E
HY62SF16404E-I
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Untitled
Abstract: No abstract text available
Text: HY62UF16400A/ HY62QF16400A/ HY62EF16400A/ HY62SF16400A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16400A / HY62QF16400A / HY62EF16400A / HY62SF16400A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The
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HY62UF16400A/
HY62QF16400A/
HY62EF16400A/
HY62SF16400A
256Kx16bit
HY62UF16400A
HY62QF16400A
HY62EF16400A
16bits.
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Untitled
Abstract: No abstract text available
Text: HY62LF16404D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 2.3 ~ 2.7V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02
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HY62LF16404D
256Kx16bit
HYQF6404D
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hysf643
Abstract: No abstract text available
Text: HY62SF16403A Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 08 Icc1 Value change. 30mA -> 20mA Nov.22.2000 Final 09 Marking Information add tBLZ / tOLZ value is changed
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HY62SF16403A
256Kx16bit
HYSF643A
100ns
120ns
hysf643
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CMOS 4091
Abstract: No abstract text available
Text: HY62SF16406D Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.7 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2000 Preliminary 01 Changed Logo Mar.23.2001 Preliminary 02
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HY62SF16406D
256Kx16bit
HYSF6406D
CMOS 4091
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Untitled
Abstract: No abstract text available
Text: HY62SF16404E Series 256Kx16bit full CMOS SRAM Document Title 256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.20.2001 Preliminary 01 Package Height Changed 1.0mm -> 0.9mm Mar.05.2002
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HY62SF16404E
256Kx16bit
4091Ohm
3273Ohm
3070Ohm
3150Ohm
HYSF6404E
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Untitled
Abstract: No abstract text available
Text: HY62UF16400/ HY62QF16400/ HY62EF16400/ HY62SF16400 Series 256Kx16bit full CMOS SRAM PRELIMINARY FEATURES DESCRIPTION • Fully static operation and Tri-state output • TTL compatible inputs and outputs • Battery backup LL/SL-part - 1.5V(min) data retention
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HY62UF16400/
HY62QF16400/
HY62EF16400/
HY62SF16400
256Kx16bit
HY62UF16400
HY62QF16400
HY62EF16400
16bits.
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Untitled
Abstract: No abstract text available
Text: HY62UF16403A Series 256Kx16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16403A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62UF16403A uses high performance full CMOS process technology and is designed for high speed and low power
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HY62UF16403A
256Kx16bit
16bits.
48-ball
48ball
5M-1994.
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EM256J16B
Abstract: EM256J16T
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM256J16 Preliminary EM256J16 256Kx16bit Ultra-Low Power Asynchronous Static RAM Overview Features The EM256J16 is an integrated memory device
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EM256J16
256Kx16bit
EM256J16
EM256U16
EM256J16T
EM256J16B
EM256J16T
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Untitled
Abstract: No abstract text available
Text: HY62UF16401A/ HY62QF16401A/ HY62EF16401A/ HY62SF16401A Series 256Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16401A / HY62QF16401A / HY62EF16401A / HY62SF16401A is a high speed, super low power and 4Mbit full CMOS SRAM organized as 262,144 words by 16bits. The
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HY62UF16401A/
HY62QF16401A/
HY62EF16401A/
HY62SF16401A
256Kx16bit
HY62UF16401A
HY62QF16401A
HY62EF16401A
16bits.
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Untitled
Abstract: No abstract text available
Text: HY62VF08401C Series 256Kx16bit full CMOS SRAM Document Title 512K x 8bit 3.0 ~ 3.6V Super low Power FCMOS Slow SRAM Revision History Revision No History Draft Date Remark 00 Initial Draft Dec.18.2000 Final 01 Changed Logo Mar.23.2001 Final 02 Changed Isb1 values
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HY62VF08401C
256Kx16bit
HY62UF08401C
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Untitled
Abstract: No abstract text available
Text: EDI8M16256C 35/45/55/70 Module The fu tu re . •■ A E>VAM C E OKIFOIF8MATDOM 256Kx16 SRAM CMOS, High Speed Module Features The EDI8M16256C is a 4096K 256Kx16bit High Speed Static RAM module constructed using sixteen EDI81256C (256Kx1) Static RAMs in ieadless chip
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EDI8M16256C
256Kx16
EDI8M16256C
4096K
256Kx16bit)
EDI81256C
256Kx1)
EDI816H64C
1024K
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