Untitled
Abstract: No abstract text available
Text: Very Low Power CMOS SRAM 2M X 8 bit BS62LV1600 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 46mA Max. at 55ns
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BS62LV1600
115mA
R0201-BS62LV1600
220uA
100uA
110uA
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CY14B101LA-SZ45XI
Abstract: CY14B101LA-SZ25XI
Text: CY14B101LA CY14B101NA 1 Mbit 128K x 8/64K x 16 nvSRAM 1 Mbit (128K x 8/64K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 128K x 8 (CY14B101LA) or 64K x 16 (CY14B101NA) ■ Hands off Automatic STORE on Power Down with only a Small
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CY14B101LA
CY14B101NA
8/64K
CY14B101LA/CY14B101NA
CY14B101LA-SZ45XI
CY14B101LA-SZ25XI
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AT49BV802A
Abstract: AT49BV802AT AT49BV802AT-70CI at49bv802a-70tu
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Fifteen 32K Word 64K Bytes Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout
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3405E
AT49BV802A
AT49BV802AT
AT49BV802AT-70CI
at49bv802a-70tu
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w19b320
Abstract: No abstract text available
Text: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4
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W19B320AT/B
w19b320
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48C20
Abstract: SA125 AT49BV640DT-70CU AT49BV640D AT49BV640DT AT49BV640D-70CU SWITCH SA125 278000 eprom
Text: Features • Single Voltage Operation Read/Write: 2.65V - 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – One Hundred Twenty-seven 32K Word 64K Bytes Main Sectors with Individual Write Lockout
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3608C
48C20
SA125
AT49BV640DT-70CU
AT49BV640D
AT49BV640DT
AT49BV640D-70CU
SWITCH SA125
278000 eprom
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S 3590A
Abstract: AT49BV163D AT49BV163DT AT49BV163DT-70TU
Text: Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Fast Read Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • • – Thirty-one 32K Word 64K Bytes Sectors with Individual Write Lockout
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bga 6x8
Abstract: bga 6x8 Package A64E06161 A64E06161G
Text: A64E06161 1M X 16 Bit Low Voltage Super RAMTM Preliminary Features n Common I/O using three-state output n Support 3 distinct operation modes for reducing standby power : Reduced Memory Size Operation 4M,8M,12M,16M Partial Array Refresh (4M,8M,12M) Deep Power Down Mode
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A64E06161
48-ball
A64E06161
I/O10
I/O11
I/O12
I/O14
I/O13
I/O15
A64E06161G
bga 6x8
bga 6x8 Package
A64E06161G
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TIB0
Abstract: K9F6408Q0C K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA
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K9F6408Q0C
K9F6408U0C
K9F6408U0C-Y
K9F6408U0C
9mmX11mm
63ball
48ball
K9F6408Q0C-D
K9F6408Q0C-B
K9F6408U0C-D
TIB0
K9F6408Q0C
K9F6408Q0C-B
K9F6408U0C-B
K9F6408U0C-QCB0
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SOP 8 200MIL
Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with
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D-85622
REJ01C0001-0100Z
SOP 8 200MIL
serial flash 256Mb fast erase spi
TM 1628 IC SOP
Micron 512MB NOR FLASH
HN29V1G91T-30
HN58C1001FPI-15
M5M51008DFP-70HI
256mb EEPROM Memory
CSP-48
TSOP 28 SPI memory Package flash
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TE28F640J3C-120
Abstract: TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability
Text: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective
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28F128J3,
28F640J3,
28F320J3
x8/x16)
32-Byte
128-bit
--64-bit
High-Densi8/x16
56-Lead
TE28F640J3C-120
TE28F128J3C-120
INTEL 28F320J3
28F128J3
28F256K18
TE28F320J3C110
28F320J3
RC28F640J3C-120
28F640J3
28F640J3 reliability
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SST39LF512
Abstract: SST39LF010 SST39LF020 SST39LF040 SST39VF010 SST39VF020 SST39VF040 SST39VF512
Text: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet
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SST39LF512
SST39LF010
SST39LF020
SST39LF040
SST39VF512
SST39VF010
SST39VF020
SST39VF040
SST39LF/VF512
512Kb
SST39LF040
SST39VF040
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MX23L3213
Abstract: MX23L3213TC-12 MX23L3213TC-70 MX23L3213TC-90 MX23L3213TI-10 MX23L3213TI-70 MX23L3213TI-90 tsop 48 PIN
Text: MX23L3213 32M-BIT MASK ROM FEATURES PIN DESCRIPTION • Bit organization - 4M x 8 byte mode - 2M x 16 (word mode) • Fast access time - Random access:70ns(max.) • Current - Operating:16mA - Standby:5uA • Supply voltage - 2.7V ~ 3.6V • Package - 48 pin TSOP (12mm x 20mm)
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MX23L3213
32M-BIT
D15/A-1
JUN/29/2005
MX23L3213
MX23L3213TC-12
MX23L3213TC-70
MX23L3213TC-90
MX23L3213TI-10
MX23L3213TI-70
MX23L3213TI-90
tsop 48 PIN
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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A29L800
Abstract: A29L800V
Text: A29L800 Series 1M X 8 Bit / 512K X 16 Bit CMOS 3.0 Volt-only, Preliminary Boot Sector Flash Memory Features n Single power supply operation - Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications n Access times: - 70/90 max.
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A29L800
KbyteX15
KwordX15
48TFBGA)
A29L800V
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smd transistor HB
Abstract: LP62S16128B-T
Text: LP62S16128B-T Series 128K X 16 BIT LOW VOLTAGE CMOS SRAM Features n Operating voltage: 2.7V to 3.6V n Access times: 55/70 ns max. n Current: Very low power version: Operating: 55ns 40mA (max.) 70ns 35mA (max.) Standby: 10µA (max.) n n n n n Full static operation, no clock or refreshing required
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LP62S16128B-T
44-pin
48-ball
MO192
smd transistor HB
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Untitled
Abstract: No abstract text available
Text: RENESAS LSIs 2003.08.21 Ver. 7.0 M5M5V416CWG -55HI, -70HI 4194304-BIT 262144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION FEATURES The M5M5V416CWG is a f amily of low v oltage 4-Mbit static RAMs organized as 262144-words by 16-bit, f abricated by Renesas's
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M5M5V416CWG
-55HI,
-70HI
4194304-BIT
262144-WORD
16-BIT)
262144-words
16-bit,
M5M5V416C
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Untitled
Abstract: No abstract text available
Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised
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K8D6x16UTM
K8D6x16UBM
48TSOP1
16M/16M
08MAX
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AS6C1016
Abstract: sram 64k 64k x 8 sram
Text: OCTOBER 2007 January 2007 AS6C1016 X 8CMOS BIT LOW POWER CMOS SRAM 64K X 16 BIT LOW512K POWER SRAM FEATURES GENERAL DESCRIPTION Fast access time : 55ns Low power consumption: Operating current : 20mA TYP. Standby current : 2 A (TYP.) Single 2.7V ~ 5.5V power supply
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AS6C1016
44-pin
48-ball
AS6C1016
576-bit
OCTOBER/2007,
sram 64k
64k x 8 sram
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BGA-48-0608
Abstract: BH616UV1611
Text: Ultra Low Power/High Speed CMOS SRAM 1M X 16 bit BH616UV1611 Pb-Free and Green package materials are compliant to RoHS FEATURES DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V The BH616UV1611 is a high performance, ultra low power CMOS y Ultra low power consumption :
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BH616UV1611
BH616UV1611
55/70ns
R0201-BH616UV1611
BGA-48-0608
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BGA-48-0608
Abstract: BH616UV8011
Text: Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit BH616UV8011 Pb-Free and Green package materials are compliant to RoHS FEATURES DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V y Ultra low power consumption : Operation current : 12mA Max. at 55ns
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BH616UV8011
x8/x16
R0201-BH616UV8011
TSOP1-48
BGA-48-0608
BH616UV8011
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lv8011
Abstract: AT49BV8011 AT49BV8011T AT49LV8011 AT49LV8011T
Text: Features • Single Supply for Read and Write: 2.7V to 3.3V BV , 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architecture • • • • • • • • • • • Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout
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1265E
01/00/xM
lv8011
AT49BV8011
AT49BV8011T
AT49LV8011
AT49LV8011T
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A12C
Abstract: A14C A15C CY62127V
Text: CY62127V V CYPRESS 64K x 16 Static RAM Writing to the device is accomplished by taking Chip Enable CE and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (l/0-| through l/0 8), is written into the location specified on the address pins (Aq
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CY62127V
44-pin
CY62127V
A12C
A14C
A15C
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Untitled
Abstract: No abstract text available
Text: A M D tl Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from
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Am29DL800B
8-Bit/512
16-Bit)
Am29DL800
FBB048.
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Untitled
Abstract: No abstract text available
Text: / A M D il A m 2 9 L V 0 1 7 B 16 Megabit 2 M x 8-Bit CM O S 3.0 Volt-only Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • S in g le p o w e r s u p p ly o p e ra tio n ■ Embedded Algorithms — Full voltage range: 2.7 to 3.6 volt read and write
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16-038-TSOP-1
TSR040--40-Pin
16-038-TSOP-1
TSR040
Am29LV017B
FGC048--48-Ball
16-038-FGC-2
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