IC IGBT 20N120
Abstract: 20n120 20N120 IGBT ixys ixdh 20n120 IXDH20N120D1 20N120D1
Text: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings
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20N120
20N120
O-247
IXDH20N120D1
IC IGBT 20N120
20N120 IGBT
ixys ixdh 20n120
IXDH20N120D1
20N120D1
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Untitled
Abstract: No abstract text available
Text: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode C C Short Circuit SOA Capability Square RBSOA G G E E IXDH 20N120 Preliminary Data IXDH 20N120 D1 Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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20N120
20N120
O-247
IXDH20N120D1
D-68623
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Untitled
Abstract: No abstract text available
Text: IXDH 20N120 VCES = 1200 V IXDH 20N120 D1 IC25 = 38 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings
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20N120
20N120
O-247
IXDH20N120D1
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IXDH20N120D1
Abstract: IXDH20N120 20N120 IC IGBT 20N120 ixys ixdh 20n120 20N120 IGBT 20N120D1 200-Millimeter
Text: IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE sat typ = 2.4 V High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G TO-247 AD G G C E IXDH 20N120 Symbol Conditions VCES TJ = 25°C to 150°C IXDH 20N120 D1 Maximum Ratings
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20N120
20N120
O-247
IXDH20N120D1
IXDH20N120D1
IXDH20N120
IC IGBT 20N120
ixys ixdh 20n120
20N120 IGBT
20N120D1
200-Millimeter
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20N120
Abstract: No abstract text available
Text: Advanced Technical Information VCES IC25 VCE sat tfi(typ) IXGH 20N120 IXGT 20N120 IGBT High Voltage, Low VCE(sat) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM
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20N120
20N120
O-268
O-247
O-268AA
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Untitled
Abstract: No abstract text available
Text: IXGH 20N120 VCES IXGT 20N120 IC25 VCE sat tfi(typ) IGBT = 1200 V = 40 A = 2.5 V = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM
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20N120
O-247
O-268
O-268
728B1
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information VCES IC25 VCE sat tfi(typ) IXGH 20N120 IXGT 20N120 IGBT High Voltage, Low VCE(sat) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V VGEM
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20N120
20N120
O-268
O-247
O-268AA
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20N120
Abstract: 20N100
Text: Advanced Technical Information IXFK 20N120 IXFX 20N120 HiPerFETTM Power MOSFETs VDSS ID25 = 1200 V = 20 A = 0.75 Ω RDS on trr ≤ 300 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous
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20N120
247TM
20N120
20N100
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20N120D1
Abstract: IC IGBT 20N120 20n120 FII30-12E ISOPLUS247
Text: IXER 20N120 IXER 20N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.4 V in ISOPLUS247 C ISOPLUS247™ C G G G C E IXER 20N120 Isolated Backside E E IXER 20N120D1 G = Gate C = Collector E = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C
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20N120
20N120D1
ISOPLUS247TM
20080118a
20N120D1
IC IGBT 20N120
20n120
FII30-12E
ISOPLUS247
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TO-247 weight
Abstract: 20N120 20N120 IGBT
Text: IGBT IXGH 20N120 VCES IXGT 20N120 IC25 VCE sat tfi(typ) = 1200 V = 40 A = 2.5 V = 380 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM
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20N120
O-247
O-268
O-268
728B1
TO-247 weight
20N120 IGBT
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20N120D1
Abstract: 20N120D 20N120 IGBT 20N120 FII30-12E ISOPLUS247 IXER20N120D1 IC IGBT 20N120
Text: IXER 20N120 IXER 20N120D1 NPT3 IGBT IC25 = 36 A VCES = 1200 V VCE sat typ = 2.4 V in ISOPLUS247 C ISOPLUS247™ C G G G C E IXER 20N120 Isolated Backside E E IXER 20N120D1 G = Gate C = Collector E = Emitter Features IGBT Symbol Conditions VCES TVJ = 25°C to 150°C
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20N120
20N120D1
ISOPLUS247TM
20080118a
20N120D1
20N120D
20N120 IGBT
20N120
FII30-12E
ISOPLUS247
IXER20N120D1
IC IGBT 20N120
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IC IGBT 20N120
Abstract: 20N120
Text: IGBT IXGA 20N120 VCES IXGP 20N120 IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1200 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 40 A IC90 TC = 90°C
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20N120
O-220AB
O-263
728B1
IC IGBT 20N120
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information IXFK 20N120 IXFX 20N120 HiPerFETTM Power MOSFETs VDSS ID25 = 1200 V = 20 A = 0.75 Ω RDS on trr ≤ 300 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM Continuous
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20N120
247TM
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20N120
Abstract: IC IGBT 20N120
Text: IXDH 20N120 AU1 High Voltage IGBT with Diode C Short Circuit SOA Capability Square RBSOA VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V G E Preliminary Data Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kΩ
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20N120
O-247
IXDH20N120AU1
D-68623
IC IGBT 20N120
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IC IGBT 20N120
Abstract: IXDH20N120AU1 ixdh20n120au 20N120
Text: IXDA 20N120 AS VCES = 1200 V = 34 A IC25 VCE sat typ = 2.8 V High Voltage IGBT Short Circuit SOA Capability Square RBSOA C Preliminary Data TO-263 AB G G E E Symbol Conditions VCES TJ = 25°C to 150°C Maximum Ratings 1200 VCGR TJ = 25°C to 150°C; RGE = 20 kW
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20N120
O-263
IXDH20N120AU1
IC IGBT 20N120
IXDH20N120AU1
ixdh20n120au
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35N60
Abstract: 30N120 75N120 ixys ixdn 75 n 120 20n60 IXDN75N120 IXDH30N60 55N120 20N60 to220 ixdn55n
Text: Discrete NPT IGBTs Contents NPT IGBT VCES IC max VCE sat TO-263 (.AS) typ. TC = 25°C TC = 25°C V A V 600 32 60 2.2 2.1 IXDP 20N60 B IXDP 35N60 B 34 38 50 60 100 150 2.8 2.4 2.4 2.4 2.3 2.2 IXDA 20N120 AS 1200 TO-247 TO-268 Page STO-227 ISOPLUS 247TM TO-220
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O-263
O-247
20N60
35N60
STO-227
O-268
247TM
O-220
20N120
30N120
75N120
ixys ixdn 75 n 120
IXDN75N120
IXDH30N60
55N120
20N60 to220
ixdn55n
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Untitled
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFN 20N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS ID25 = 1200 V = 20 A RDS on = 0.75 Ω ≤ 300 ns trr D G S Symbol Test Conditions S Maximum Ratings VDSS TJ = 25°C to 150°C
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20N120
OT-227
E153432
728B1
123B1
728B1
065B1
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diode B4
Abstract: ixdn75n120 STO-227 IGBT D-Series 20n60 IXDH20N120AU1 20N60B 30N120 55N120 30N120D1
Text: SCSOA NPT IGBT D-Series Contents IGBT VCES IC max VCE sat TO-263 max TO-247 TC = 25°C TC = 25°C V A V 600 32 60 2.8 2.7 ➤ IXDP 20N60 B ➤ IXDP 35N60 B 34 38 60 100 150 3.4 3.0 2.9 2.8 2.7 IXDA 20N120 AS 1200 TO-268 STO-227 Page TO-220 B4 - 2 B4 - 4 ➤ IXDH 35N60 B
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O-263
O-247
O-268
STO-227
O-220
20N60
35N60
20N120
20N120
diode B4
ixdn75n120
STO-227
IGBT D-Series
IXDH20N120AU1
20N60B
30N120
55N120
30N120D1
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12n60c
Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM
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O-220
O-263
O-247
PLUS247
O-268
ISOPLUS247TM
O-264
20N30
28N30
30N30
12n60c
60n60 igbt
diode b242
31N60
ixgk50n60bu1
50n60bd1
Diode 12 b2
120n60
60N60
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Untitled
Abstract: No abstract text available
Text: □IXYS High Voltage IGBT with optional Diode IXDH 20N120 IXDH 20N120 D1 V CES ^C25 vCE sat typ 1200 V 38 A 2.4 V Short Circuit SOA Capability Square RBSOA IXDH 20N120 Preliminary Data Symbol Conditions IXDH 20N120 D1 Maximum Ratings VCES Tj = 25°C to 150°C
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20N120
20N120
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30N120D1
Abstract: 55N120D1 35N60BD1 30n120d 35N60B transistor c90 40N120D1 20N120D1 60N120 20N60BD1
Text: Discrete N P TIGBT A A 3 NPT IGBT , FID H0 F" NPT IGBT = non-punch through insulated gate bipolar transistor square RBSOA, short circuit rated p V V Type IXDP IXDP IXDP IXDH IXDH >- IXDR 20N60B 20N60BD1 35N60B 35N60B 35N60BD1 35N60BD1 600 IXDA 20N120AS IXDH 20N120
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O-268
35-06C
40-06D
OT-227B
50-12E
50-12BD
30N120D1
55N120D1
35N60BD1
30n120d
35N60B
transistor c90
40N120D1
20N120D1
60N120
20N60BD1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MGW20N 120/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M GW 20N120 In su late d G ate Bipolar T ransistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced
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MGW20N
120/D
20N120
MGW20N120/D
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20N120AU1
Abstract: 20N120A IXDH20N120AU1
Text: □IXYS High Voltage IGBT with Diode IXDH 20N120 AU1 VCES = 1200 V ' c a = 3 = 2.8 V s V c E Sa „ w 4 A Short Circuit SOA Capability Square RBSOA Preliminary Data Symbol Conditions Maximum Ratings VcES Tj = 25°C to 150°C 1200 V VcGR Tj = 25°C to 150°C; RGE= 20 k£2
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20N120
D-68623
004btn
20N120AU1
20N120A
IXDH20N120AU1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MGW 2 0 N 120 Insulated Gate Bipolar Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high
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O-247
20N120
0E-02
0E-01
0E-05
0E-04
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