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    1N485 Price and Stock

    onsemi 1N485BTR

    DIODE GEN PURP 200V 200MA DO35
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    onsemi 1N485B

    DIODE GEN PURP 200V 200MA DO35
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    Microchip Technology Inc 1N485

    DIODE GEN PURP 180V 100MA DO7
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    Microchip Technology Inc 1N485B

    DIODE GEN PURP 200V 200MA DO35
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    Microchip Technology Inc 1N485A

    DIODE GEN PURP 180V 100MA DO7
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    1N485 Datasheets (169)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N485 General Diode 100mA Iout, 180V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N485 Micronas Semiconductor 100mA Iout, 180V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N485 Microsemi 100mA Iout, 180V Vrrm General Purpose Silicon Rectifier Scan PDF
    1N485 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N485 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N485 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N485 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N485 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N4850 Microsemi Data Book 1983 Scan PDF
    1N4850 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N4850 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N4850 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N4850 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N4850 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N48500B Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N4850A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N4850A Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N4850A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N4850B Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N4850B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    ...

    1N485 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1N485B 1N485B DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 200 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg


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    PDF 1N485B DO-35 1N485B 1N485BTR

    1n457a equivalent

    Abstract: BAV45 diode pico-amp low-leakage silicon diode 1N3595 1N457A 1N459A 1N485B 1N6263 CDH300
    Text: Silicon Diodes DO-35 Case Continued Low Leakage Diodes TYPE NO. 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 VRRM (V) MAX 70 200 200 150 150 150 IO (mA) MAX 200 200 200 150 200 200 VF (V) MAX 1.0 1.0 1.0 1.0 1.0 1.05 @ IF (mA) 100 100 100 200 200 200 IR @ VR


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    PDF DO-35 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 BAV45 1n457a equivalent BAV45 diode pico-amp low-leakage silicon diode 1N3595 1N457A 1N459A 1N485B 1N6263 CDH300

    Untitled

    Abstract: No abstract text available
    Text: 1N485 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current100m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage180 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.0 V(FM) Max.(V) Forward Voltage1.1 @I(FM) (A) (Test Condition)100m @Temp. (øC) (Test Condition)


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    PDF 1N485 Current100m Voltage180 Current30u

    Untitled

    Abstract: No abstract text available
    Text: 1N485B+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current200m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage180 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)


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    PDF 1N485B Current200m Voltage180 Current25n StyleDO-35

    Untitled

    Abstract: No abstract text available
    Text: 1N485C Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current100m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage180 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition).10 @Temp. (øC) (Test Condition)


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    PDF 1N485C Current100m Voltage180

    Untitled

    Abstract: No abstract text available
    Text: 1N4859A Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage130 @I(Z) (A) (Test Condition)1.9m Tolerance (%)10 P(D) Max. (W)1.2 Z(z) Max. (ê) Dyn. Imped.700 Temp Coef pp/10k11 Maximum Operating Temp (øC)175 Package StyleDO-29


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    PDF 1N4859A Voltage130 pp/10k11 StyleDO-29

    1N485A

    Abstract: No abstract text available
    Text: 1N485A Silicon Rectifier 3.21 Diodes Silicon Rectifiers General-Purpose American Micr. Page 1 of 1 Enter Your Part # Home Part Number: 1N485A Online Store 1N485A Diodes Silicon Rectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits Optoelectronics


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    PDF 1N485A 1N485A com/1n485a

    IN483

    Abstract: IN485 IN483B 1N483B 1N485B 1N486B IN485B IN486B
    Text: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


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    PDF 1N483B 1N485B 1N486B MIL-PRF-19500/118 100mA IN483 IN485 IN483B 1N483B 1N485B 1N486B IN485B IN486B

    CLARE MARKING

    Abstract: 1N485BUR CDLL485B LL485B derating factor
    Text: FEATURES 1N485BUR • • • • • • 1N485BUR SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL485B, CDLL485B MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, sine, 8.3mS:


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    PDF 1N485BUR LL485B, CDLL485B 500mW 200mA CLARE MARKING 1N485BUR CDLL485B LL485B derating factor

    low leakage diode

    Abstract: No abstract text available
    Text: 1N485B General Purpose Low Leakage Diode. Working Inverse Voltage 180V. 1.94 Dio. Page 1 of 1 Enter Your Part # Home Part Number: 1N485B Online Store 1N485B Diodes General Purpose Low Leakage Diode. Working Inverse Voltage 180V. Transistors Integrated Circuits


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    PDF 1N485B 1N485B DO-35 com/1n485b low leakage diode

    IN485B

    Abstract: IN486B IN485 IN483B 1N483B 1N485B 1N486B
    Text: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


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    PDF 1N483B 1N485B 1N486B MIL-PRF-19500/118 100mA IN485B IN486B IN485 IN483B 1N483B 1N485B 1N486B

    1N485

    Abstract: 1N485A JANTX 1N485B derating 1N485B marking blue
    Text: FEATURES 1N485B • • • • • • 1N485B AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS 1N485 & 1N485A MAXIMUM RATINGS AT 25 °C Operating Temperature:


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    PDF 1N485B 1N485B MIL-PRF-19500/118 1N485 1N485A 500mW 200mA MILPRF-19500/118 1N485 1N485A JANTX 1N485B derating marking blue

    Untitled

    Abstract: No abstract text available
    Text: 1N485B 1N485B DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 200 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg


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    PDF 1N485B DO-35

    Untitled

    Abstract: No abstract text available
    Text: 1N4856B Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage100 @I(Z) (A) (Test Condition)2.5m Tolerance (%)5 P(D) Max. (W)1.2 Z(z) Max. (ê) Dyn. Imped.350 Temp Coef pp/10k10 Maximum Operating Temp (øC)175 Package StyleDO-29


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    PDF 1N4856B Voltage100 pp/10k10 StyleDO-29

    1N485B

    Abstract: 1N486B
    Text: 1N485B 1N486B Central Semiconductor Corp. central Semiconductor Corp. +1 SILICON DIODE JEDEC DO-35 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N485B, 1N486B types are silicon planar diodes designed for low leakage applications.


    OCR Scan
    PDF 1N485B 1N486B DO-35 1N485B, 1N486B 1N485B 10OfiA

    MMBD1502A

    Abstract: 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 1N3070 FOH300A 1N485B 1N486B
    Text: hot a m bSDHBD D03TS07 423 NATL VRRM Irrm Volts Min Device 250 1N486B BAV21 1N3070 1N459 1N459A 1N485B 1N4938 1S923 BAS21 BAV20 FDH400 MMBD1401 MMBD1402 MMBD1403 MMBD1404 MMBD1405 MMBD1501A MMBD1502A MMBD1503A MMBD1504A MMBD1505A 1N3595 1N458A 1N6099 200


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    PDF 1N486B D0-35 BAV21 DO-35 1N3070 1N459 1N459A MMBD1502A 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 FOH300A 1N485B

    1N485

    Abstract: 05G433
    Text: ALLEGRO MICROSYSTEMS INC T3 05G433Ö 0 0 0 3 7 6 7 1 • ALGR T-91-01 PROCESS TRO Process TRO Medium-Speed Switching Diode Process TRO produces a non-gold-doped silicon epitaxial diode used primarily as a medium-speed switching device. Designed to 1N485 specifications,


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    PDF 05G433Ã T-91-01 1N485 10m-A 05G433

    Untitled

    Abstract: No abstract text available
    Text: Silicon Diodes DO-35 Case £3 Low Leakage Diodes lo Vf @ If IR @ VR cT V (mA) (V) (mA) (nA) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200 1.0


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    PDF DO-35 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 1N645 1N647 1N649

    1N485

    Abstract: 1N482 1n456 Q 0265 R 1n461 1n4828 1n462 1n464 1N484A texas instruments 1N457A
    Text: TYPES 1N456 THRU 1N459, 1N461 THRU 1N464, 1N482 THRU 1N485, AND SUFFIX VERSIONS SILICON GENERAL PURPOSE DIODES B U L L E T IN N O . D L - S 71 1 1 5 0 8 , S E P T E M B E R 1971 VRM w kg • • • 25 to 185 Volts • Rugged Double-Plug Construction •


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    PDF 1N456 1N459, 1N461 1N464, 1N482 1N485, 1N459. 1N464. 1N485 Q 0265 R 1n4828 1n462 1n464 1N484A texas instruments 1N457A

    IC 7447 A

    Abstract: 7447 spec sheet JAN1N486B JAN-TX1N486B JANTX1N486B
    Text: Standard Recovery Rectifiers Part Number 1N662 JAN1N662 1N663 JAN1N663 MT5102 MT5103 MT5100 MT5101 MT5139 1N483 1N483A MT5140 1N485 1N3595-1 1N3595US 1N3595US-1 JAN1N3595-1 JAN1N3595US-1 JANS1N3595-1 JANTX1N3595-1 JANTX1N3595U JANTXV1N3595JANTXV1N3595 1N5194


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    PDF DO-35 IC 7447 A 7447 spec sheet JAN1N486B JAN-TX1N486B JANTX1N486B

    Untitled

    Abstract: No abstract text available
    Text: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. Vrrm l£> Vf @ If IR @ VR Ct V (mA) (V) (mA) (nA) (pF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200


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    PDF DO-35 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 1N645 1N647 1N649

    1n485b

    Abstract: No abstract text available
    Text: DIODE 1N483B; JAN, JANTX 1N483B 1N485B; JAN, JANTX 1N485B General Purpose Low Current FEATURES DESCRIPTION • • • • This Series is useful in low current rectify­ ing applications for military, industrial and commercial equipment. Metallurgical Bond


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    PDF 1N483B; 1N483B 1N485B; 1N485B MIL-S-19500/118 1N485B 200mA

    Untitled

    Abstract: No abstract text available
    Text: MICROSEMI CORP/ UATERTOIilN 5GE ]> ninnF • =1347^3 DD1S3S1 E lfl ■ UNIT 1N483B; JAN, JANTX 1N483B 1N485B; JAN, JANTX 1N485B l-r| v / L / t General Purpose Low Current FEATU RES • M e ta llu rg ica l Bond • Q u alified to MIL-S-19500/118 • P la n a r P assivated C h ip


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    PDF 1N483B; 1N483B 1N485B; 1N485B MIL-S-19500/118

    1n35

    Abstract: No abstract text available
    Text: Silicon D iodes DO-35 Case Low Leakage Diodes TYPE NO. •o VF @ IF IR V r Ct V (mA) (V) (mA) (nA) (pF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200


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    PDF DO-35 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 1N645 1N647 1N649 1n35