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    1N485B Price and Stock

    onsemi 1N485BTR

    DIODE GEN PURP 200V 200MA DO35
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    onsemi 1N485B

    DIODE GEN PURP 200V 200MA DO35
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    Microchip Technology Inc 1N485B

    DIODE GEN PURP 200V 200MA DO35
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    Microchip Technology Inc 1N485BUR

    DIODE GEN PURP 180V 100MA DO213
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    Central Semiconductor Corp 1N485B-BK

    DIODE GEN PURP 200V 200MA DO41
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    1N485B Datasheets (42)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N485B Compensated Devices GENERAL PURPOSE SILICON DIODES Original PDF
    1N485B Fairchild Semiconductor DIODE STANDARD RECOVERY RECTIFIER 200V 0.2A 2DO-35 BULK Original PDF
    1N485B Microsemi High Conductance DO-35 Diodes Original PDF
    1N485B Microsemi Signal or Computer Diode Original PDF
    1N485B Taitron Components Rectifier Diode, Single, 200V, SOD-27|SOD-68, 2-Pin Original PDF
    1N485B Central Semiconductor Silicon Diode, DO-35 Package Scan PDF
    1N485B Fairchild Semiconductor General purpose low leakage diode. Working inverse voltage 180V. Scan PDF
    1N485B Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    1N485B General Diode Silicon Diode Selection Guide Scan PDF
    1N485B General Semiconductor Low Power Miniature Glass Passivated Junction Rectifier Scan PDF
    1N485B Micronas Semiconductor General Purpose and Switching Diodes in a DO-35 Package Scan PDF
    1N485B Microsemi General Purpose Silicon Diodes Scan PDF
    1N485B Microsemi Data Book 1983 Scan PDF
    1N485B Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N485B Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N485B Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N485B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N485B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N485B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N485B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    1N485B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1N485B 1N485B DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 200 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg


    Original     		PDF 1N485B DO-35 1N485B 1N485BTR

    1n457a equivalent

    Abstract: BAV45 diode pico-amp low-leakage silicon diode 1N3595 1N457A 1N459A 1N485B 1N6263 CDH300
    Text: Silicon Diodes DO-35 Case Continued Low Leakage Diodes TYPE NO. 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 VRRM (V) MAX 70 200 200 150 150 150 IO (mA) MAX 200 200 200 150 200 200 VF (V) MAX 1.0 1.0 1.0 1.0 1.0 1.05 @ IF (mA) 100 100 100 200 200 200 IR @ VR


    Original     		PDF DO-35 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 BAV45 1n457a equivalent BAV45 diode pico-amp low-leakage silicon diode 1N3595 1N457A 1N459A 1N485B 1N6263 CDH300

    Untitled

    Abstract: No abstract text available
    Text: 1N485B+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current200m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage180 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)


    Original     		PDF 1N485B Current200m Voltage180 Current25n StyleDO-35

    IN483

    Abstract: IN485 IN483B 1N483B 1N485B 1N486B IN485B IN486B
    Text: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		PDF 1N483B 1N485B 1N486B MIL-PRF-19500/118 100mA IN483 IN485 IN483B 1N483B 1N485B 1N486B IN485B IN486B

    CLARE MARKING

    Abstract: 1N485BUR CDLL485B LL485B derating factor
    Text: FEATURES 1N485BUR • • • • • • 1N485BUR SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL485B, CDLL485B MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, sine, 8.3mS:


    Original     		PDF 1N485BUR LL485B, CDLL485B 500mW 200mA CLARE MARKING 1N485BUR CDLL485B LL485B derating factor

    low leakage diode

    Abstract: No abstract text available
    Text: 1N485B General Purpose Low Leakage Diode. Working Inverse Voltage 180V. 1.94 Dio. Page 1 of 1 Enter Your Part # Home Part Number: 1N485B Online Store 1N485B Diodes General Purpose Low Leakage Diode. Working Inverse Voltage 180V. Transistors Integrated Circuits


    Original     		PDF 1N485B 1N485B DO-35 com/1n485b low leakage diode

    IN485B

    Abstract: IN486B IN485 IN483B 1N483B 1N485B 1N486B
    Text: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


    Original     		PDF 1N483B 1N485B 1N486B MIL-PRF-19500/118 100mA IN485B IN486B IN485 IN483B 1N483B 1N485B 1N486B

    1N485

    Abstract: 1N485A JANTX 1N485B derating 1N485B marking blue
    Text: FEATURES 1N485B • • • • • • 1N485B AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS 1N485 & 1N485A MAXIMUM RATINGS AT 25 °C Operating Temperature:


    Original     		PDF 1N485B 1N485B MIL-PRF-19500/118 1N485 1N485A 500mW 200mA MILPRF-19500/118 1N485 1N485A JANTX 1N485B derating marking blue

    Untitled

    Abstract: No abstract text available
    Text: 1N485B 1N485B DO-35 Color Band Denotes Cathode Small Signal Diode Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VRRM Maximum Repetitive Reverse Voltage 200 V IF AV Average Rectified Forward Current 200 mA IFSM Tstg


    Original     		PDF 1N485B DO-35

    BAV45

    Abstract: CDSH27 CDH300 1N3595 1N457A 1N459A 1N485B 1N6263 CDH333 CDSH270
    Text: Silicon Diodes DO-35 Case Continued Low Leakage Diodes TYPE NO. 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 VRRM (V) MAX 70 200 200 150 150 150 IO (mA) MAX 200 200 200 150 200 200 VF (V) MAX 1.0 1.0 1.0 1.0 1.0 1.05 @ IF (mA) 100 100 100 200 200 200 IR @ VR


    Original     		PDF DO-35 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 BAV45 BAV45 CDSH27 CDH300 1N3595 1N457A 1N459A 1N485B 1N6263 CDH333 CDSH270

    Untitled

    Abstract: No abstract text available
    Text: 1N485B+JANTXV Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current200m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage180 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)


    Original     		PDF 1N485B Current200m Voltage180 Current25n StyleDO-35

    Untitled

    Abstract: No abstract text available
    Text: 1N485B+JANTX Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current200m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage180 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.2.0 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)


    Original     		PDF 1N485B Current200m Voltage180 Current25n StyleDO-35

    1N485B

    Abstract: JANTX 1N485B
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com SWITCHING DIODE – METALLURGICALLY BONDED – HERMETICALLY SEALED – DOUBLE PLUG CONSTRUCTION Qualified per MIL-PRF-19500/118


    Original     		PDF MIL-PRF-19500/118 1N485B 500mW 200mA MIL-PRF-19500/118 DO-35 LDS-0029 1N485B JANTX 1N485B

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    1N485B

    Abstract: 1N486B
    Text: 1N485B 1N486B Central Semiconductor Corp. central Semiconductor Corp. +1 SILICON DIODE JEDEC DO-35 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 1N485B, 1N486B types are silicon planar diodes designed for low leakage applications.


    OCR Scan     		PDF 1N485B 1N486B DO-35 1N485B, 1N486B 1N485B 10OfiA

    MMBD1502A

    Abstract: 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 1N3070 FOH300A 1N485B 1N486B
    Text: hot a m bSDHBD D03TS07 423 NATL VRRM Irrm Volts Min Device 250 1N486B BAV21 1N3070 1N459 1N459A 1N485B 1N4938 1S923 BAS21 BAV20 FDH400 MMBD1401 MMBD1402 MMBD1403 MMBD1404 MMBD1405 MMBD1501A MMBD1502A MMBD1503A MMBD1504A MMBD1505A 1N3595 1N458A 1N6099 200


    OCR Scan     		PDF 1N486B D0-35 BAV21 DO-35 1N3070 1N459 1N459A MMBD1502A 1N914 SOT-23 T0236 FOH300 MMBD1402 1n4148 LL34 FOH300A 1N485B

    Untitled

    Abstract: No abstract text available
    Text: Silicon Diodes DO-35 Case £3 Low Leakage Diodes lo Vf @ If IR @ VR cT V (mA) (V) (mA) (nA) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200 1.0


    OCR Scan     		PDF DO-35 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 1N645 1N647 1N649

    Untitled

    Abstract: No abstract text available
    Text: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. Vrrm l£> Vf @ If IR @ VR Ct V (mA) (V) (mA) (nA) (pF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200


    OCR Scan     		PDF DO-35 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 1N645 1N647 1N649

    1n485b

    Abstract: No abstract text available
    Text: DIODE 1N483B; JAN, JANTX 1N483B 1N485B; JAN, JANTX 1N485B General Purpose Low Current FEATURES DESCRIPTION • • • • This Series is useful in low current rectify­ ing applications for military, industrial and commercial equipment. Metallurgical Bond


    OCR Scan     		PDF 1N483B; 1N483B 1N485B; 1N485B MIL-S-19500/118 1N485B 200mA

    Untitled

    Abstract: No abstract text available
    Text: MICROSEMI CORP/ UATERTOIilN 5GE ]> ninnF • =1347^3 DD1S3S1 E lfl ■ UNIT 1N483B; JAN, JANTX 1N483B 1N485B; JAN, JANTX 1N485B l-r| v / L / t General Purpose Low Current FEATU RES • M e ta llu rg ica l Bond • Q u alified to MIL-S-19500/118 • P la n a r P assivated C h ip


    OCR Scan     		PDF 1N483B; 1N483B 1N485B; 1N485B MIL-S-19500/118

    1n35

    Abstract: No abstract text available
    Text: Silicon D iodes DO-35 Case Low Leakage Diodes TYPE NO. •o VF @ IF IR V r Ct V (mA) (V) (mA) (nA) (pF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200


    OCR Scan     		PDF DO-35 1N457A 1N459A 1N485B 1N3595 CDH300 CDH333 1N645 1N647 1N649 1n35

    1N4858

    Abstract: Schottky Diodes do-35 1N3595 1N457A 1N459A 1N485B 1N6263 1N645 1N647 1N649
    Text: Silicon Diodes DO-35 Case Low Leakage Diodes TYPE NO. lo vF @ If IR @ VR cT V (mA) (V) (mA) (nA) (PF) MAX MAX MAX 1N457A 70 200 1.0 100 25 6.0 1N459A 200 200 1.0 100 25 6.0 1N485B 200 200 1.0 100 25 1.0 1N3595 150 150 1.0 200 3.0 8.0 CDH300 150 200 1.0 200


    OCR Scan     		PDF DO-35 1N457A 1N459A 1N485B 1N3595 cdh300 cdh333 1N645 1N647 1N649 1N4858 Schottky Diodes do-35 1N6263

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    FDS01503

    Abstract: FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent
    Text: This Material National Semiconductor Surface Mount Diodes <S> m 2 t-i General Purpose & Specialty Diodes O Device Description Pkg. No. Pin Out Bv V Min •r (nA) @ Max Vr V Vf <V> Max If mA mA C PF Max to­ ns Max Test Cond. FDS01000 FAMILY Proc. Family


    OCR Scan     		PDF D113D T-03-01 FDS01200 FDS01400 FDS01500 FDS01700 1N914 1N4149 FDH600 1N625 FDS01503 FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent