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    12N50A Price and Stock

    JW Winco Inc 12N50A03K

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    DigiKey 12N50A03K Box 1
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    JW Winco Inc 12N50A04K

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    DigiKey 12N50A04K Box 1
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    JW Winco Inc 12N50A05K

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    DigiKey 12N50A05K Box 1
    • 1 $15.23
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    JW Winco Inc 12N50A13-E

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    DigiKey 12N50A13-E Box 1
    • 1 $29.89
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    JW Winco Inc 12N50A34-D

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    DigiKey 12N50A34-D Box 1
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    12N50A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    n50a

    Abstract: 12N50A 12n50 IXYS CORPORATION TO-204AA ups 017 IXTH max 3540 D-68623 IXTM12N50A
    Text: Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A VDSS ID25 RDS on 500 V 500 V 12 A 12 A 0.4 Ω 0.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS Continuous


    Original     		PDF O-247 O-204 O-204 O-247 n50a 12N50A 12n50 IXYS CORPORATION TO-204AA ups 017 IXTH max 3540 D-68623 IXTM12N50A

    12N50A

    Abstract: N50A NC4050
    Text: Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A VDSS ID25 RDS on 500 V 500 V 12 A 12 A 0.4 Ω 0.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous


    Original     		PDF O-204 O-247 O-247 O-204AA 12N50A 12N50A N50A NC4050

    21N50

    Abstract: 6N80 MOSFET 11N80 PAGE-42 K 15N60 6N80A IXTM21N50 IXTH7P50
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channell Enhancement-Mode Type V DSS max. t jm = 150° c ► New IXTM 12N50A V 500 IXTM 21N50 IXTM 24N50 *025 □ DS<on C ies typ. C res typ. p PF PF K/W W LL 12 0.4 2800 70 600 120 0.7 180 5b 21 24 0.25 0.23 4200


    OCR Scan     		PDF 12N50A 21N50 24N50 15N60 20N60 6N80A 11N80 13N80 6N90A 10N90 6N80 MOSFET 11N80 PAGE-42 K 15N60 IXTM21N50 IXTH7P50

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


    OCR Scan     		PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan     		PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    Untitled

    Abstract: No abstract text available
    Text: -*r -jr r'“'* Y S X w X v Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A * DSS ^D25 500 V 500 V 12 A 12 A p DS on a 0.4 Q 0.4 N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj V DGR Maximum Ratings = 25°C to 150°C 500 V T j = 25°C to 150°C; RgS = 1 M il


    OCR Scan     		PDF O-247 O-204 O-247 12N50A 100ms 4bfib22b

    IRFP 260 M

    Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH


    OCR Scan     		PDF 67N10 75N10 42N20 50N20 35N30 40N30 12N50A 21N50 24N50 30N50 IRFP 260 M 5n100 6n80 IRFP IXTN 36N50 C irfp 240

    11n80

    Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
    Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088


    OCR Scan     		PDF O-247 O-251 O-204 O-264 15N60 20N60 15N70 01N80* 35N30 40N30 11n80 ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


    OCR Scan     		PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B

    6N80

    Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
    Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68


    OCR Scan     		PDF 67N10 75N10 42N20 50N20 68N20 35N30 40N30 30N45 12N50A 21N50 6N80 IXTN 36N50 C 40N160 40N140 ixtn 79n20 irfp 240 IXTK33N50 IXTN21N100 IRFP

    mm036

    Abstract: ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100
    Text: 17 17 17 17 17 17 17 17 17 17 17 17 17 17 13 15 15 13 13 13 13 14 14 14 14 13 13 13 13 13 15 15 15 13 13 13 13 13 13 14 14 14 14 14 14 13 13 13 15 15 15 14 14 14 DSAI35-12A DSAI 35-16A DSAI 35-18A DSAI 75-12A DSAI 75-16A DSAI 75-18A DSEI 12-06A DSEI 12-1OA


    OCR Scan     		PDF DSAI35-12A 5-16A 5-18A 5-12A 2-06A 12-1OA 2-12A 2x30-Q4C mm036 ml075-12 MM036-12 mm036-16 mm075-12io1 mm062 DSI 12-06A MDD95-16N1B ME03 21N100

    IXTH15N45A

    Abstract: No abstract text available
    Text: 4686226 I X Y S 03 CORP d F | 4 1. f l t=,2 2 1> D D O O E I S 2 |~~ / 3 / " □IXYS TECHNICAL DATA SHEET August 1988 DATA SHEET NO. 1004A IRFC450 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V B R D S S - . 500V


    OCR Scan     		PDF IRFC450: 2N6769 2N6770 IRF450/IRFP450 IRF451/IRFP451 IRF452/IRFP452 1RF453/IRFP453 IXTH15N50A/IXTM15N50A IXTH15N45A/IXTM15N45A 12N50A/IXTM12N50A IXTH15N45A

    Power MOSFET TT 2146

    Abstract: mosfet TT 2146 n50A os TT 2222
    Text: XYS Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A ^DSS ! ^D25 500 V 12 A 500 V I 12 A P DS on 0.4 i l 0.4 i l N-Channel Enhancement Mode Symbol Test Conditions VDSS T j = 25°C to 150°C 500 Tj = 25°C to 150°C; Res = 1 Mi2 500 V Maximum Ratings V Vgs


    OCR Scan     		PDF O-247 O-204 O-204 O-247 C2-32 C2-33 Power MOSFET TT 2146 mosfet TT 2146 n50A os TT 2222

    IRFP450 inverter

    Abstract: IXTH12N50A IXTH15N45A 2N6769 2N6770 IRFC450 IXTH12N50 ITXH12N45
    Text: 4686226 I X Y S CORP 03 D e | 4 fl t. E S t. DOODEIS 5 / 7 □IXYS TECHNICAL DATA SHEET August 1988 DATA SHEET NO. 1004A IRFC450 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V B R D S S - . 500V 0.4Q RDS(on) .


    OCR Scan     		PDF IRFC450: 2N6769 2N6770 IRF450/IRFP450 IRF451/IRFP451 IRF452/IRFP452 1RF453/IRFP453 IXTH15N50A/IXTM15N50A IXTH15N45A/IXTM15N45A IXTH12N50A/IXTM12N50A IRFP450 inverter IXTH12N50A IXTH15N45A 2N6770 IRFC450 IXTH12N50 ITXH12N45