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    10N100U1 Price and Stock

    IXYS Corporation IXGH10N100U1

    IGBT 1000V 20A 100W TO247AD
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    DigiKey IXGH10N100U1 Tube 30
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    10N100U1 Datasheets Context Search

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    10N100U1

    Abstract: N100A ixgh 1500
    Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES IC25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ


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    PDF N100U1 N100AU1 10N100U1 10N100AU1 10N100U1 N100A ixgh 1500

    10N100

    Abstract: 10N10 10N100A N100 IC-2520
    Text: Low VCE sat IGBT High speed IGBT IXGH 10 N100 IXGH 10 N100A Maximum Ratings VCES IC25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Symbol Test Conditions VCES T J = 25°C to 150°C 1000 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20


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    PDF N100A 10N100 10N100A 10N100 10N100A 10N10 N100 IC-2520

    10N100A

    Abstract: 10N100 N100
    Text: VCES Low VCE sat IGBT High speed IGBT IXGH 10 N100 IXGH 10 N100A Maximum Ratings 1000 V 20 A 1000 V 20 A Symbol Test Conditions VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25


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    PDF N100A 10N100 10N100A 10N100 10N100A 10N100U1 10N100AU1 N100

    10N100U1

    Abstract: RG150
    Text: Low VCE sat IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 VCES I C25 VCE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions Maximum Ratings V CES TJ = 25°C to 150°C 1000 V V CGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    PDF N100U1 N100AU1 10N100U1 10N100AU1 10N100U1 RG150

    50n50c

    Abstract: 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60
    Text: Preliminary data HiPerFASTTM IGBT VCES IXGH 50N50B IXGH 50N60B IC25 VCE sat 500 V 75 A 600 V 75 A tfi 2.3 V 100 ns 2.5 V 120 ns TO-247 AD C (TAB) Symbol Test Conditions Maximum Ratings 50N50 50N60 VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


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    PDF 50N50B 50N60B O-247 50N50 50N60 IXGH24N50BU1 IXGH24N60BU1 50n50c 50N60 IXGH20N60AU1 10N60A IXGH20N60U1 G 50N60 G20N60 sot-227 footprint A48A 24N60

    Untitled

    Abstract: No abstract text available
    Text: □ IXYS Low VCE sal IGBT with Diode High speed IGBT with Diode IXGH 10 N100U1 IXGH 10 N100AU1 V CES ^C25 V CE(sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Combi Packs Symbol Test Conditions vw CES T, = 25°C to 150°C 1000 V V CGR Tj = 25°C to 150°C; RaE = 1 M£2


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    PDF N100U1 N100AU1 O-247 10N100U1 10N100AU1 4bflb22b

    10N100

    Abstract: No abstract text available
    Text: DIXYS Low VCE 6al IGBT High speed IGBT IXGH10N100 IXGH10N100A V y c es ^C25 v CE (sat) 1000 V 1000 V 20 A 20 A 3.5 V 4.0 V Ae Sym bol Test Conditions Maximum Ratings V ces T, = 25“C t o 150°C 1000 V co„ ^ = 25“C to 150“C; RaE = 1 M£2 1000 V VGEs


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    PDF IXGH10N100 IXGH10N100A O-247 10N100A 10N100A 10N100 10N100U1 10N100AU1

    1XGH10N100U1

    Abstract: No abstract text available
    Text: Low VCE{sat IGBT with Diode High speed IGBT with Diode 10N100U1 IXGH10N100AU1 S ym bol Test Conditions M axim um Ratings V CES Tj = 25°C to 150°C 1000 V V CG» T, = 25°C to 150°C; R ^ = 1 Mi2 1000 V V GES C ontinuous ±20 V v GEM Tra n sie n t ±30


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    PDF IXGH10N100U1 IXGH10N100AU1 1XGH10N100U1

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


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    PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    SMD diode b24

    Abstract: diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode
    Text: QIXYS HtPerFAST _ fG&T G-Series ^ Contents A \ v CES V TO-220 IXGP TO-247 ^ TO-263 (IXGA) TO-247 SMD/.S* T0-204 miniBLOC Page 300 60 60 1.6 1.8 IXGH 30N30/.S IXGH 40N30/.S B2-4 B2-6 600 40 76 75® 75 1.8 1.8 2.5 1.8 IXGH IXGH IXGH IXGH B2-64


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    PDF 12N100 O-220 O-263 O-247 O-247 T0-204 30N30/. 40N30/. 31N60 SMD diode b24 diode b26 smd DIODE B28 20N60BU1 smd diode b23 60n60 igbt smd B292 12n60c SMD diode B2 b26 diode

    Untitled

    Abstract: No abstract text available
    Text: Low VCE s>t IGBT High speed IGBT IXGH10N100 IXGH10N100A « VC E S ^C25 V * C E (sat) 1000 V 1000V 20 A 20 A 3.5 V 4.0 V Symbol Test Conditions v CES Tj = 25°C to 150°C 1000 V ^CGR Tj = 25°C to 150°C; RGE= 1 M£2 1000 V v" ges v GEM Continuous ±20 V T ransient


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    PDF IXGH10N100 IXGH10N100A O-247 10N100 10N100A 10N100U1 10N100AU1 0003b34

    IXGH20N60U1

    Abstract: IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB
    Text: Mb E D • MböbEEb 0000^20 7 H I X Y 'PS !-! S I X Y S CORP □IXYS PRELIMINARY TECHNICAL INFORMATION* Data Book NO.91750A October 1991 "U1" Series IGBTs IGBTs with Interna! Fast Recovery Rectifier Features High Voltage IGBT and Anti-Parallel in One Package


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    PDF 1750A 30KHz T-39-15 IXGH10N60U1 IXGH10N60AU1 IXGH20N60U1 IXGH17N100AU1 SOT227B package IXSH20N60U1 *GH20N60AU1 1XYS UltraFast 5-40 kHz E1S4 TI231 IGBT 20A 600V ABB

    8n80

    Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
    Text: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1


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    PDF CS1011 -18io1 CS1011-22io1 CS1011-25io1 CS1250-12io1 CS1250-14io1 CS1250-16io1 CS20-12 CS20-14 CS20-16 8n80 DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B

    40n80

    Abstract: IXGH40N60 38N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A
    Text: Insulated Gate Bipolar Transistors IGBT 4^ r/ioei fType VCE(sat) max. Cto. typ. typ. A V pF pP 20 40 40 50 76 75 75 10 20 31 30 38 40 60 2.5 2.5 1.8 2.5 1.8 2.5 1.8 750 1500 1500 2800 2500 4500 4000 30 40 40 70 70 60 100 20 34 50 10 17 25 3.5 750 1500 2750


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    PDF 10N60 20N60 31N60 30N60 38N60 40N60 60N60 10N100 17N100 25N100 40n80 IXGH40N60 12N60U1 40N80A 50N60AU1 20n60 igbt igbt 20n60 60n60 ixgh IXGA24N60A

    12n60u

    Abstract: sta 750 tic 263a
    Text: , IGBT with Diode Combi Pack G series with high gain type VCES .Tjm= 1:S0oO ► New : >• >>>> ► ► ► ► ► IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGH IXGA IXGP IXGH IXGH


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