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    10N60 Search Results

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    10N60 Price and Stock

    Infineon Technologies AG IGB10N60TATMA1

    IGBT NPT FS 600V 20A TO263-3
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    DigiKey IGB10N60TATMA1 Reel 3,000 1,000
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    Rochester Electronics IGB10N60TATMA1 1,062 1
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    Nisshinbo Micro Devices R1210N602D-TR-FE

    IC REG BOOST 5MA SOT23-5
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    DigiKey R1210N602D-TR-FE Digi-Reel 2,995 1
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    R1210N602D-TR-FE Cut Tape 2,995 1
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    Infineon Technologies AG IKD10N60RFATMA1

    IGBT 600V 20A 150W PG-TO252-3
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    DigiKey IKD10N60RFATMA1 Cut Tape 2,480 1
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    IKD10N60RFATMA1 Digi-Reel 2,480 1
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    Newark IKD10N60RFATMA1 Cut Tape 6,717 1
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    Rochester Electronics IKD10N60RFATMA1 102 1
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    Chip1Stop IKD10N60RFATMA1 Cut Tape 2,500
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    EBV Elektronik IKD10N60RFATMA1 20 Weeks 2,500
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    STMicroelectronics STFH10N60M2

    MOSFET N-CH 600V 7.5A TO220FP
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    DigiKey STFH10N60M2 Tube 1,664 1
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    Avnet Americas STFH10N60M2 Bulk 1,840
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    Newark STFH10N60M2 Bulk 71 1
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    STMicroelectronics STFH10N60M2 1,805 1
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    Bristol Electronics STFH10N60M2 1,698
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    Avnet Silica STFH10N60M2 1,748 17 Weeks 46
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    EBV Elektronik STFH10N60M2 17 Weeks 46
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    Vishay Siliconix SIHJ10N60E-T1-GE3

    MOSFET N-CH 600V 10A PPAK SO-8
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    DigiKey SIHJ10N60E-T1-GE3 Digi-Reel 979 1
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    Find more 10N60 price and stock on Findchips.com

    10N60 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    10N60 Unisonic Technologies 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET Original PDF
    10N60-A-TA3-T Unisonic Technologies 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET Original PDF
    10N60-B-TA3-T Unisonic Technologies 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET Original PDF
    10N60C5M IXYS CoolMOS Power MOSFET Original PDF
    10N60L-A-TA3-T Unisonic Technologies 10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET Original PDF

    10N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


    Original     		PDF 10N60K 10N60K 10N60KL-TF3-T 10N60KG-TF3-T O-220F 10N60KL-TF1-T 10N60at QW-R502-743

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


    Original     		PDF 10N60K 10N60K 10N60KL-TF3-T 10N60KG-TF3-T O-220F 10N60KL-TF1-T 10N60KG-TF1-T O-22at QW-R502-743

    10N60G

    Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have


    Original     		PDF 10N60 10N60 O-220 O-220F1 O-220F2 QW-R502-119 10N60G mosfet 10a 600v 10N60G-TF3-T utc 10n60l

    Untitled

    Abstract: No abstract text available
    Text: IXKP 10N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 AB D G D S G S Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		PDF 10N60C5 O-220

    10n60b

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 10N60B2D1 10N60B2D1 IC110 O-247 8-06B 405B2 10n60b

    10n60p

    Abstract: d 1065
    Text: PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A ≤ 740 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V


    Original     		PDF 10N60P O-220 O-263 O-263) O-263 10n60p d 1065

    10N60C

    Abstract: IXKP10N60C5
    Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS


    Original     		PDF 10N60C5 O-220 20080523b 10N60C IXKP10N60C5

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K-MT Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high


    Original     		PDF 10N60K-MT 10N60K-MT QW-R205-022

    Untitled

    Abstract: No abstract text available
    Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 10N60C5M O-220 20090209d

    Untitled

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 10N60B2D1 IC110 8-06B 405B2

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.


    Original     		PDF 10N60K 10N60K O-220F O-220F1 QW-R502-743

    MOSFET IXYS TO-263

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 10N60P 10N60P O-220 O-263 405B2 MOSFET IXYS TO-263

    10N60C

    Abstract: GS54
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET


    Original     		PDF 10N60C5M O-220 20070704a9 10N60C GS54

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION 1 The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche


    Original     		PDF 10N60 10N60 O-220 O-220F O-220at QW-R502-119

    Untitled

    Abstract: No abstract text available
    Text: IXKP 10N60C5 COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS


    Original     		PDF 10N60C5 O-220 20080310a

    10n60b

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 10N60B2D1 IC110 8-06B 405B2 10n60b

    Untitled

    Abstract: No abstract text available
    Text: Photoelectric sensors FVDK 10N60Y0 Lichtleitergeräte und Lichtleiter dimension drawing general data photo actual range Sb FSE 200C1002 320 mm sensing distance Tw (FUE 200C1003) 90 mm light source pulsed red LED light indicator 1 x 1-digit display alignment / soiled lens indicator


    Original     		PDF 10N60Y0 200C1002) 200C1003)

    Untitled

    Abstract: No abstract text available
    Text: High Speed IGBT with Diode IXSA 10N60B2D1 IXSP 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF 10N60B2D1 IC110 8-06B 405B2

    10N60C

    Abstract: c16tj 10N60C5M
    Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 10N60C5M O-220 20080523c 10N60C c16tj 10N60C5M

    "7 Segment Display"

    Abstract: light dark sensor circuit baumer fvdk 10p60y0 7-SEGMENT baumer "Infrared LED" 10p60 Baumer fvdk baumer electric 2 10N60Y0
    Text: Plastic fiber optic sensors Series 10 Sensitivity adjustable by teach-in Sb 540 mm / Tw 150 mm Standard PNP light/dark operate FVDK 10P60Y0 Remote Teach-in FVDK 10P65Y0 4102010 NPN light/dark operate FVDK 10N60Y0 FVDK 10N65Y0 technical data actual range Sb through beam ø 1,5 mm


    Original     		PDF 10P60Y0 10P65Y0 10N60Y0 10N65Y0 "7 Segment Display" light dark sensor circuit baumer fvdk 10p60y0 7-SEGMENT baumer "Infrared LED" 10p60 Baumer fvdk baumer electric 2 10N60Y0

    diode DSDI 9

    Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
    Text: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B


    OCR Scan     		PDF O-247 O-220 O-264 IXGH24N50B IXGH24N50BU1 IXGH50N50B 10N60A IXGH24N60B IXGH24N60BU1 IXGH50N60B diode DSDI 9 IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A

    10N60A

    Abstract: IGBT 10N60 10N6Q
    Text: nixYS ^ 10N60 IXGA/IXGH 10N60A |g b t High speed IGBT VCES ^C25 v¥ CE sat 600 V 600 V 20 A 20 A 2.5 V 3.0 V Prelim inary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MiJ 600 V v¥ g e s


    OCR Scan     		PDF IXGH10N60 10N60A O-263 O-247 10N60 10N60A 10N60U1 10N60AU1 D94006DE, IGBT 10N60 10N6Q

    ixgh 1500

    Abstract: 40N60A 25N120 200n60 60n60 igbt smd 30n60 10N60A 30N60A .25N100 20n60a
    Text: Insulated Gate Bipolar Transistors IGBT G series with high gain V•CSS : ■■ Type . TJm = 15° CC > New ► IXGA IXGH IXGH IXGH IXGH IXGH IXGH IXGH 10N60 10N60 20N60 31N60 30N60 38N60 40N60 60N60 IXGH 10N100 >■ IXGA 12N100 > IXGH 12N100 > ► >•


    OCR Scan     		PDF 10N60 20N60 31N60 30N60 38N60 40N60 60N60 32N60BS 40N60A ixgh 1500 25N120 200n60 60n60 igbt smd 10N60A 30N60A .25N100 20n60a

    Untitled

    Abstract: No abstract text available
    Text: DIXYS IXSH 10N60AU1 VCES IC25 IGBT with Diode "S" Series Improved SCSOA Capability vCE sat typ Symbol T est C o n d itio n s V CES Tj = 25°C to 150°C 600 V v CQR Td = 25°C to 150°C; RGE= 1 MQ 600 V V0ES Continuous ±20 V VQE„ Transient ±30 V 'c a s


    OCR Scan     		PDF 10N60AU1 O-247AD