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    ZS106 Search Results

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    ZS106 Price and Stock

    KEMET Corporation F161ZS106K050V

    CAP FILM 10UF 10% 50V
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    DigiKey F161ZS106K050V Cut Tape 866 1
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    F161ZS106K050V Digi-Reel 866 1
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    Mouser Electronics F161ZS106K050V 241
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    Newark F161ZS106K050V Cut Tape 453 1
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    KEMET Corporation F161ZS106M050V

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    KEMET Corporation F161ZS106M050A

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    DigiKey F161ZS106M050A Bulk 800
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    KEMET Corporation F161ZS106J050V

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    DigiKey F161ZS106J050V Box 500
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    KEMET Corporation F160ZS106K050V

    10 Ufvdcv |Kemet F160ZS106K050V
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    ZS106 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZS106 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    ZS106 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZS106 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    ZS106 Unknown Shortform Electronic Component Datasheets Short Form PDF
    ZS106 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    ZS106 Zetex Semiconductors 400mA Iout, 600V Vrrm General Purpose Silicon Rectifier Scan PDF
    ZS106 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF

    ZS106 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZS90

    Abstract: ZS92 2S150 KS78B diode zs104 ZS140 Ks77 d8 d8 ZS94 ZS131
    Text: SILICON DIODES Very Low Leakage Planar Epitaxial Characteristics M axim um Ratings Type No. Mean Rectified Current at 75°C V RWM 2S150 ZS151 ZS152 ZS153 ZS154 ZS155 Surge C urrent fo r 5 mS. A Max. Reverse Current at V r ^ M at 25°C nA 250 250 250 250 250


    OCR Scan     		PDF 2S150 ZS151 ZS152 ZS153 ZS154 ZS155 100mA. KS77B KS78B ZS90 ZS92 diode zs104 ZS140 Ks77 d8 d8 ZS94 ZS131

    ZS106

    Abstract: zs102 diode ZS102 250mA ZS10B ZS100 ZS101 ZS103 ZS104 ZS108
    Text: GENERAL PURPOSE DIODES TABLE 3 - SILICO N DIFFUSED JUNCTION DIO DES The ZS100 and ZS120 series of diffused junction glass encapsulated diodes have been designed for general purpose applications of up to 800 volts requiring forward currents of up to 400m A and 250m A


    OCR Scan     		PDF ZS100 ZS120 400mA 250mA ZS101 ZS102 ZS103 ZS104 ZS106 zs102 diode ZS10B ZS108

    ZS150

    Abstract: ZS102 C642 diode zs104 ZS100 ZS101 ZS103 ZS104 ZS106 ZS108
    Text: AXIAL DIODES SILICON DIFFUSED JUNCTION DIODES The ZS100 and ZS120 series of diffused junction D07 glass encapsulated diodes have been designed for general purpose applications of up to 800 volts requiring forward currents of up to 400m A and 250m A respectively.


    OCR Scan     		PDF ZS100 ZS120 400mA 250mA ZS101 ZS102 ZS103 ZS104 ZS150 C642 diode zs104 ZS106 ZS108

    diode zs104

    Abstract: zs102 diode ZS120
    Text: SbE D • 'HTOSTfl G007027 540 ■ Z E T B AXIAL DIODES ZETEX SEMICONDUCTORS I SILICON DIFFUSED JUNCTION DIODES The Z S 1 0 0 and Z S 1 2 0 series of diffused junction D 0 7 glass encapsulated diodes have been designed for general purpose applications of up to 8 0 0 volts requiring forward currents of up to


    OCR Scan     		PDF G007027 ZS100 ZS101 ZS102 ZS103 ZS104 ZS106 ZS108 ZS120 ZS121 diode zs104 zs102 diode ZS120

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


    OCR Scan     		PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    ZS150

    Abstract: CECC 50001-057 BS9300 ZS100 ZS102 ZS151 ZS104 ZS122 ZS101 ZS106
    Text: SbE D • 'HTOSTfl G 0 0 7 02 7 540 ■ Z E T B AXIAL DIODES ZETEX S E M I C O N D U C T O R S I SILICON DIFFUSED JUNCTION DIODES The Z S 1 0 0 and Z S 1 2 0 series of diffused junction D 0 7 glass encapsulated diodes have been designed for general purpose applications of up to 8 0 0 volts requiring forward currents of up to


    OCR Scan     		PDF G007027 ZS100 ZS120 ZS101 ZS102 ZS103 ZS104 ZS106 ZS150 CECC 50001-057 BS9300 ZS151 ZS122

    2N222A

    Abstract: N2222 zs90 2N222 BFS61 ZS150 2n3600 BFS59 2N222-A BFX84
    Text: SILICON TRANSISTORS Planar Medium Power and Switching n-p-n Maximum Ratings Type No. Characteristics VcBO v CEO Vebo •c (pk) volts volts volts A BFS59 BFS60 BFS61 BFX84 BFX8S BFY50 BFY51 BFY52 ZT80 ZT81 ZT82 ZT83 ZT84 ZT86 ZT87 ZT88 ZT89 ZT90 ZT91 ZT92


    OCR Scan     		PDF BFS59 BFS60 BFS61 BFS96-98 BFX84 KS77B KS78B 2N222A N2222 zs90 2N222 ZS150 2n3600 2N222-A

    ZS106

    Abstract: ZS108 zs100 low leakage diodes ZS102 c643
    Text: A X I A L DIODES SILICON DIFFUSED JUNCTION DIODES The ZS100 and ZS120 series o f diffused junction D 07 glass encapsulated diodes have been designed for general purpose applications of up to 800 volts requiring forward currents of up to 4 0 0 m A and 25 0m A respectively.


    OCR Scan     		PDF ZS100 ZS120 ZS120 ZS101 ZS121 ZS102 ZS122 ZS106 ZS108 low leakage diodes c643