Untitled
Abstract: No abstract text available
Text: XR1007CN Linear ICs Active Low-pass Filter status Military/High-RelN Tech.CMOS Filter TypeChebychev Nominal Clock Frequency Hz 1.5M f(cutoff) Maximum (Hz)40k Cutoff Freq (Min. Hz) Nom. Neg Supp5.0 Nom. Pos. Supp5.0 Minimum Operating Temp (øC)0 Maximum Operating Temp (øC)70
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XR1007CN
Code8-1418
NumberLN00801418
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Untitled
Abstract: No abstract text available
Text: XR1007CP Linear ICs Active Low-pass Filter status Military/High-RelN Tech.CMOS Filter TypeChebychev Nominal Clock Frequency Hz 1.5M f(cutoff) Maximum (Hz)40k Cutoff Freq (Min. Hz) Nom. Neg Supp5.0 Nom. Pos. Supp5.0 Minimum Operating Temp (øC)0 Maximum Operating Temp (øC)70
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XR1007CP
Code8-1418
NumberLN00801418
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Untitled
Abstract: No abstract text available
Text: XR1007D Linear ICs Active Low-pass Filter status Military/High-RelN Tech.CMOS Filter TypeChebychev Nominal Clock Frequency Hz 1.5M f(cutoff) Maximum (Hz)40k Cutoff Freq (Min. Hz) Nom. Neg Supp5.0 Nom. Pos. Supp5.0 Minimum Operating Temp (øC)0 Maximum Operating Temp (øC)70
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XR1007D
Code8-1418
NumberLN00801418
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XR1007-BD-000X
Abstract: XR1007 XR1007-BD-EV1 RF RECEIVER MMIC 11-17 GHZ
Text: XR1007-BD Receiver 11.0-17.0 GHz Rev. V1 Features Chip Device Layout • Fully Integrated Design 2.2 dB Noise Figure 13.5 dB Conversion Gain 20 dB Image Rejection +4 dBm IIP3 +3 dBm LO drive Level 100% On-Wafer RF, DC and Noise Figure
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XR1007-BD
Mil-Std-883
XR1007-BD-000X
XR1007
XR1007-BD-EV1
RF RECEIVER MMIC 11-17 GHZ
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R1007-BD
Abstract: R1007 XR1007-BD-000X TS3332LD XR1007
Text: 11.0-17.0 GHz GaAs MMIC Receiver R1007-BD October 2008 - Rev 13-Oct-08 Features Fully Integrated Design 2.2 dB Noise Figure 13.5 dB Conversion Gain 20 dB Image Rejection +4 dBm IIP3 +3 dBm LO drive Level 100% On-Wafer RF, DC and Noise Figure Testing 100% Commercial-Level Visual Inspection Using
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R1007-BD
13-Oct-08
Mil-Std-883
XR1007-BD
R1007-BD
R1007
XR1007-BD-000X
TS3332LD
XR1007
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R1007
Abstract: QFN 7X7 R1007-QD transistor r1007 XR1007-QD-0N0T r1007 transistor XR1007-QD XR1007-QD-0N00 XR1007-QD-EV1
Text: 10.0-18.0 GHz GaAs Receiver QFN, 7x7 mm R1007-QD November 2010 - Rev 14-Nov-10 Features Integrated LNA, LO Buffer, Image Reject Mixer 7x7 mm, QFN +2.0 dBm LO Drive Level 2.7 dB Noise Figure 20.0 dB Image Rejection 100% RF, DC and Noise Figure Testing General Description
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R1007-QD
14-Nov-10
R1007
QFN 7X7
R1007-QD
transistor r1007
XR1007-QD-0N0T
r1007 transistor
XR1007-QD
XR1007-QD-0N00
XR1007-QD-EV1
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QFN 7X7
Abstract: No abstract text available
Text: 10.0-18.0 GHz GaAs Receiver QFN, 7x7 mm R1007-QD July 2008 - Rev 14-Jul-08 Features Integrated LNA, LO Buffer, Image Reject Mixer 7x7 mm, QFN +2.0 dBm LO Drive Level 2.7 dB Noise Figure 20.0 dB Image Rejection 100% RF, DC and Noise Figure Testing General Description
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14-Jul-08
R1007-QD
QFN 7X7
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R1007
Abstract: transistor r1007 R1007-QD XR1007-QD XR1007-QD-0N00 XR1007-QD-0N0T XR1007-QD-EV1 Image Reject Mixer
Text: 10.0-18.0 GHz GaAs Receiver QFN, 7x7 mm R1007-QD November 2008 - Rev 04-Nov-08 Features Integrated LNA, LO Buffer, Image Reject Mixer 7x7 mm, QFN +2.0 dBm LO Drive Level 2.7 dB Noise Figure 20.0 dB Image Rejection 100% RF, DC and Noise Figure Testing General Description
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R1007-QD
04-Nov-08
R1007
transistor r1007
R1007-QD
XR1007-QD
XR1007-QD-0N00
XR1007-QD-0N0T
XR1007-QD-EV1
Image Reject Mixer
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transistor r1007
Abstract: R1007 r1007 transistor 84-1LMI XR1007
Text: 11.0-17.0 GHz GaAs MMIC Receiver R1007 January 2006 - Rev 25-Jan-06 Features Fully Integrated Design 2.2 dB Noise Figure 13.5 dB Conversion Gain 20 dB Image Rejection +4 dBm IIP3 +3 dBm LO drive Level 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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R1007
25-Jan-06
MIL-STD-883
transistor r1007
R1007
r1007 transistor
84-1LMI
XR1007
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Untitled
Abstract: No abstract text available
Text: 10.0-18.0 GHz GaAs Receiver QFN, 7x7 mm R1007-QD September 2008 - Rev 19-Sep-08 Features Integrated LNA, LO Buffer, Image Reject Mixer 7x7 mm, QFN +2.0 dBm LO Drive Level 2.7 dB Noise Figure 20.0 dB Image Rejection 100% RF, DC and Noise Figure Testing General Description
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19-Sep-08
R1007-QD
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R1007-QD
Abstract: XR1007-QD-EV1 R1007 transistor r1007 XR1007-QD XR1007-QD-0N00 XR1007-QD-0N0T
Text: 10.0-18.0 GHz GaAs Receiver QFN, 7x7 mm R1007-QD July 2006 - Rev 14-Jul-06 Features Integrated LNA, LO Buffer, Image Reject Mixer 7x7 mm, QFN +2.0 dBm LO Drive Level 2.7 dB Noise Figure 20.0 dB Image Rejection 100% RF, DC and Noise Figure Testing General Description
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R1007-QD
14-Jul-06
XR1007-QD
R1007-QD
XR1007-QD-EV1
R1007
transistor r1007
XR1007-QD-0N00
XR1007-QD-0N0T
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Untitled
Abstract: No abstract text available
Text: 11.0-17.0 GHz GaAs MMIC Receiver R1007 October 2006 - Rev 13-Oct-06 Features Fully Integrated Design 2.2 dB Noise Figure 13.5 dB Conversion Gain 20 dB Image Rejection +4 dBm IIP3 +3 dBm LO drive Level 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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R1007
13-Oct-06
MIL-STD-883
XR1007-BD-000X
XR1007-BD-EV1
XR1007-BD
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r1007
Abstract: R1007-QD XR1007-QD-0N0T QFN 7X7 XR1007-QD XR1007-QD-0N00 XR1007-QD-EV1 operational amplifier 2ghz
Text: 10.0-18.0 GHz GaAs Receiver QFN, 7x7 mm R1007-QD August 2007 - Rev 12-Aug-07 Features Integrated LNA, LO Buffer, Image Reject Mixer 7x7 mm, QFN +2.0 dBm LO Drive Level 2.7 dB Noise Figure 20.0 dB Image Rejection 100% RF, DC and Noise Figure Testing General Description
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R1007-QD
12-Aug-07
XR1007-QD
r1007
R1007-QD
XR1007-QD-0N0T
QFN 7X7
XR1007-QD-0N00
XR1007-QD-EV1
operational amplifier 2ghz
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Untitled
Abstract: No abstract text available
Text: 10.0-18.0 GHz GaAs Receiver QFN, 7x7 mm R1007-QD August 2007 - Rev 12-Aug-07 Features Integrated LNA, LO Buffer, Image Reject Mixer 7x7 mm, QFN +2.0 dBm LO Drive Level 2.7 dB Noise Figure 20.0 dB Image Rejection 100% RF, DC and Noise Figure Testing General Description
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12-Aug-07
R1007-QD
XR1007-QD
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xg1015-SE
Abstract: XB1013-qt CMM6001-BD CFP0103-SP CMM6004-BD XZ1003-QT XU1016 QH XP1073-BD XD1008-QH XP1035-BD
Text: Sales Contact Information NORTH AMERICA COLORADO, UTAH USA ALABAMA, FLORIDA, GEORGIA, MISSISSIPPI, NORTH CAROLINA, SOUTH CAROLINA,TENNESSEE, Electronic Marketing Associates EMA 919-847-8800 [email protected] Alabama Office 256-880-8050 [email protected]
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transistor r1007
Abstract: R1007
Text: 11.0-17.0 GHz GaAs MMIC Receiver R1007 July 2006 - Rev 14-Jul-06 Features Fully Integrated Design 2.2 dB Noise Figure 13.5 dB Conversion Gain 20 dB Image Rejection +4 dBm IIP3 +3 dBm LO drive Level 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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R1007
14-Jul-06
MIL-STD-883
XR1007-BD-000X
XR1007-BD-EV1
XR1007-BD
transistor r1007
R1007
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1006CP
Abstract: No abstract text available
Text: XR-1001/8 P R E LIM IN A R Y General Purpose Low Pass Filter G E N E R A L DESCRIPTION FU N CT IO N AL B LO CK D IAG RAM Each of these devices in the series is a fourth order switched capacitor low pass filter providing 24 dB/octave {Butterworth of roll off outside of the pass band. W ithin this
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XR-1001/8
XR-1001/1008
XR-1001/8
AX-20.
AYb-27.
AX-19.
1006CP
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6 pin 2D 1002
Abstract: 2d 1002 6 pin XR1002CP AX2002 XR1006CP XR-1008 Pin-for-Pin Compatible with the chebyshev 0.5dB AX-19 1002cp
Text: XR-1001/8 General Purpose Low Pass Filter PIN ASSIGNMENT GENERAL DESCRIPTION Each of these devices in the series is a fourth order switched capacitor low pass filter providing 24dB/octave Butterworth of roll off outside of the pass band, Within this series, Butterworth, Bessel or Chebyshev (0.5 or
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XR-1001/8
24dB/octave
XR-1001/1008
XR-1001/8
AX-20.
AYb-27.
AYb-28.
6 pin 2D 1002
2d 1002 6 pin
XR1002CP
AX2002
XR1006CP
XR-1008
Pin-for-Pin Compatible with the
chebyshev 0.5dB
AX-19
1002cp
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AX995
Abstract: chebyshev 0.5dB yb27 yb20 mf4-100 XR-1003C
Text: XR-1001/8 General Purpose Low Pass Filter PIN ASSIGNMENT GENERAL DESCRIPTION Each of these devices in the series is a fourth order switched capacitor low pass filter providing 24dB/octave Butterworth of roll off outside of the pass band, Within this series, Butterworth, Bessel or Chebyshev (0.5 or
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XR-1001/8
24dB/octave
XR-1001/1008
XR-1001/3
XR-1001/8
335kHz
02kHz
Yb--27.
148kH:
AX995
chebyshev 0.5dB
yb27
yb20
mf4-100
XR-1003C
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