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    X1004 Price and Stock

    Bourns Inc CR0402-FX-1004GLF

    RES SMD 1M OHM 1% 1/16W 0402
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    DigiKey CR0402-FX-1004GLF Reel 130,000 10,000
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    Avnet Americas CR0402-FX-1004GLF Reel 12 Weeks 10,000
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    Newark CR0402-FX-1004GLF Cut Tape 11,546 1
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    RS CR0402-FX-1004GLF Bulk 13 Weeks 20,000
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    Bristol Electronics CR0402-FX-1004GLF 9,766
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    Avnet Abacus CR0402-FX-1004GLF Reel 15 Weeks 20,000
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    Master Electronics CR0402-FX-1004GLF 100,000
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    Walsin Technology Corporation WR12X1004FTL

    RES 1M OHM 1% 1/4W 1206
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    DigiKey WR12X1004FTL Digi-Reel 28,439 1
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    WR12X1004FTL Cut Tape 28,439 1
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    WR12X1004FTL Reel 20,000 5,000
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    Bourns Inc CRS0805-FX-1004ELF

    RES 1M OHM 1% 1/4W 0805
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    DigiKey CRS0805-FX-1004ELF Digi-Reel 16,849 1
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    CRS0805-FX-1004ELF Cut Tape 16,849 1
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    CRS0805-FX-1004ELF Reel 10,000 5,000
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    Avnet Americas CRS0805-FX-1004ELF Reel 14 Weeks 5,000
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    Newark CRS0805-FX-1004ELF Cut Tape 4,566 10
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    RS CRS0805-FX-1004ELF Bulk 16 Weeks 5,000
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    Avnet Abacus CRS0805-FX-1004ELF Reel 17 Weeks 5,000
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    Master Electronics CRS0805-FX-1004ELF
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    Bourns Inc CRM0805-FX-1004ELF

    RESHIGHPOWER 0805 1M 1% 250MW TC
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    DigiKey CRM0805-FX-1004ELF Digi-Reel 9,860 1
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    CRM0805-FX-1004ELF Cut Tape 9,860 1
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    CRM0805-FX-1004ELF Reel 5,000 5,000
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    Avnet Abacus CRM0805-FX-1004ELF Reel 17 Weeks 10,000
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    Master Electronics CRM0805-FX-1004ELF
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    Bourns Inc CHV0805-FX-1004EST

    RESHV ST 0805 1M 1% 0.125W TCR10
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    DigiKey CHV0805-FX-1004EST Cut Tape 8,191 1
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    CHV0805-FX-1004EST Digi-Reel 8,191 1
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    Mouser Electronics CHV0805-FX-1004EST 11,048
    • 1 $0.25
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    Newark CHV0805-FX-1004EST Cut Tape 4,816 1
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    Avnet Abacus CHV0805-FX-1004EST Reel 17 Weeks 5,000
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    Master Electronics CHV0805-FX-1004EST
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    Find more X1004 price and stock on Findchips.com

    X1004 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    X1004 Unknown Discontinued Transistor Data Book 1975 Scan PDF

    X1004 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler X1004-BD January 2007 - Rev 17-Jan-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		17-Jan-07 X1004-BD XR1002 MIL-STD-883 XX1004-BD XX1004-BD-000V XX1004-BD-000W XX1004-BD-EV1 XX1004-BD PDF

    Untitled

    Abstract: No abstract text available
    Text: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler X1004-BD February 2007 - Rev 16-Feb-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		X1004-BD 16-Feb-07 XR1002 MIL-STD-883 XX1004-BD XX1004-BD-000V XX1004-BD-EV1 XX1004-BD PDF

    12DBL0409

    Abstract: DM6030HK TS3332LD XR1002 XX1004-BD XX1004-BD-000V X1004-BD 3 pin ir receiver module 0038 ultrasonic amplifier circuit diagram
    Text: 10.0-13.0/20.0-26.0 GHz GaAs MMIC Active Doubler X1004-BD February 2007 - Rev 16-Feb-07 Features Excellent Mixer Driver 2-Stage Active Design Can be Used to Drive XR1002 Receiver +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883


    Original     		X1004-BD 16-Feb-07 XR1002 MIL-STD-883 XX1004-BD XX1004-BD-000V XX1004-BD-EV1 XX1004-BD 12DBL0409 DM6030HK TS3332LD XX1004-BD-000V X1004-BD 3 pin ir receiver module 0038 ultrasonic amplifier circuit diagram PDF

    SUP90P06-09L

    Abstract: No abstract text available
    Text: SUP90P06-09L Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A)c 0.0093 at VGS = - 10 V - 90 0.0118 at VGS = - 4.5 V - 90 • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC RoHS


    Original     		SUP90P06-09L 2002/95/EC O-220AB SUP90P06-09L-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SUP90P06-09L PDF

    irfbe30

    Abstract: No abstract text available
    Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements


    Original     		IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30 PDF

    MH 1004 SMPS

    Abstract: No abstract text available
    Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		IRF830A, SiHF830A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MH 1004 SMPS PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFZ48R, SiHFZ48R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • Advanced Process Technology Available Ultra Low On-Resistance RoHS* Dynamic dV/dt Rating COMPLIANT 175 °C Operating Temperature Fast Switching Fully Avalanche Rated


    Original     		IRFZ48R, SiHFZ48R SiHFZ48 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SUP75P03-07-E3

    Abstract: No abstract text available
    Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available


    Original     		SUB75P03-07, SUP75P03-07 2002/95/EC O-220AB O-263 SUB75P03-07 SUP75P03-07 O-263) SUB75P03-07-E3 SUP75P03-07-E3 PDF

    D 92 M - 02 DIODE

    Abstract: No abstract text available
    Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements


    Original     		IRF820, SiHF820 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 D 92 M - 02 DIODE PDF

    IRFB9N65

    Abstract: No abstract text available
    Text: IRFB9N65A, SiHFB9N65A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 650 RDS(on) () VGS = 10 V 0.93 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) 19 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFB9N65A, SiHFB9N65A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFB9N65 PDF

    74281

    Abstract: No abstract text available
    Text: SUP90N08-4m8P Vishay Siliconix N-Channel 75 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 75 RDS(on) () ID (A) Qg (Typ) d 0.0048 at VGS = 10 V 90 0.006 at VGS = 8 V 90d 105 • 175 °C Junction Temperature • 100 % UIS Tested


    Original     		SUP90N08-4m8P 2002/95/EC O-220AB SUP90N08-4m8P-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 74281 PDF

    any circuit using irf830

    Abstract: No abstract text available
    Text: IRF830, SiHF830 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF830, SiHF830 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 any circuit using irf830 PDF

    irf740lc

    Abstract: No abstract text available
    Text: IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.55 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single RoHS* COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRF740LC, SiHF740LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irf740lc PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		IRF740A, SiHF740A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    power MOSFET IRF610

    Abstract: No abstract text available
    Text: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		IRF610, SiHF610 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 power MOSFET IRF610 PDF

    MAR 740 MOSFET TRANSISTOR

    Abstract: D 1402
    Text: IRFBC40A, SiHFBC40A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) (Ω) VGS = 10 V 1.2 Qg (Max.) (nC) 42 Qgs (nC) 10 Qgd (nC) 20 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRFBC40A, SiHFBC40A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 MAR 740 MOSFET TRANSISTOR D 1402 PDF

    flyback xfmr 3.5 mh

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRF730A, SiHF730A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 flyback xfmr 3.5 mh PDF

    Untitled

    Abstract: No abstract text available
    Text: METRIC Dimensions are millimeters over inches Ribbon Cable Interconnect Solutions Micro-MaTch Miniature Connector System — Crimp On Snap In COSI Connector C 2.54 [.100] 1.27 [.050] 2.65 [.104] Basic Part Number 338095 and Contacts Part Numbers 338096 and 338097


    Original     		are15 PDF

    SUP53P06-20

    Abstract: SUP53
    Text: New Product SUP53P06-20 Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A)a 0.0195 at VGS = - 10 V - 53 0.025 at VGS = - 4.5 V - 42 Qg (Typ.) • TrenchFET Power MOSFET • 100 % UIS Tested RoHS 76 nC COMPLIANT


    Original     		SUP53P06-20 O-220AB SUP53P06-20-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SUP53P06-20 SUP53 PDF

    awm 2896 flat RIBBON CABLE

    Abstract: Flat Ribbon Connector - 636 60 IDC 768340-1 20 pin Polarized IDC Male Headers with Latch 5499910-1 1-111626-7 5104338-2 609-1030lf 5103309-3 1761686-3
    Text: Catalog 82012 Revised 10-09 TE logo and Tyco Electronics are trademarks of the Tyco Electronics group of companies and its licensors. tycoelectronics.com 82012–2.5M–CIS–FP–10-09 Ribbon Cable Interconnect Solutions Tyco Electronics Corporation Harrisburg, PA


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SUP28N15-52 Vishay Siliconix N-Channel 150-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 150 ID (A) 0.052 at VGS = 10 V 28 0.060 at VGS = 6 V 26 • • • • TrenchFET Power MOSFET 175 °C Junction Temperature PWM Optimized Compliant to RoHS Directive 2002/95/EC


    Original     		SUP28N15-52 2002/95/EC O-220AB SUP28N15-52 11-Mar-11 PDF

    CX10047

    Abstract: sony CX10047 CX10045 CX10046 VOH14 sony camera WF01
    Text: SONY C O R P / C O M P O N E N T P R O D S 77 D e J a3fl53fl3~llQ003l]fl b | % 'xi T" 77^/7 X10046 S O N Y AGC and AUTO IRIS for B/W CAMERA Description: C X10046 is a bipolar 1C designed for B/W Package outline Unit: mm camera signal processing. It consists of an AGC


    OCR Scan     		CX10046 CX10046 CX10045 16-pin 15max CX10045and CX10047. VIN11 ol09vF2-vF1" CX10047 sony CX10047 VOH14 sony camera WF01 PDF

    CX10047

    Abstract: sony CX10047 CX10045 CX10046 ccd sony sony CX10045 SONY CAMERA BW82 cx10047 sony
    Text: mutœutam* h M .jft»-. •. ri—" ■ lliiTMt SONY CORP/COMPONENT PRODS 7? D e | 0302303 DDDQ30M T I D T - 7 7-/7 X10045 CCD CAMERA SIGNAL PROCESSING WITH SAMPLE-HOLD CIRCUIT Description: C X 10045 is a bipolar 1C designed for CCD camera signal processing. It samples the CCD image


    OCR Scan     		CX10045 CX10045 CX10046 CX10047. 16-pin 15MAX 05MIN fiBfl53fi3 CX10047 sony CX10047 ccd sony sony CX10045 SONY CAMERA BW82 cx10047 sony PDF