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Vishay Siliconix SIHFBE30S-GE3 MOSFET N-CHANNEL 800V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHFBE30S-GE3	Cut Tape	960		1	1 $2.57 10 $1.656 100 $2.57 1000 $0.911 10000 $0.911	Buy Now
	SIHFBE30S-GE3	Reel			1,000	1 - 10 - 100 - 1000 $0.83926 10000 $0.74125	Buy Now
	SIHFBE30S-GE3	Digi-Reel			1	1 $2.57 10 $1.656 100 $2.57 1000 $0.911 10000 $0.911	Buy Now
Vishay Siliconix SIHFBE30STRL-GE3 MOSFET N-CHANNEL 800V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHFBE30STRL-GE3	Reel	800		800	1 - 10 - 100 - 1000 $0.86101 10000 $0.74125	Buy Now
	SIHFBE30STRL-GE3	Digi-Reel			1	1 $2.57 10 $2.57 100 $2.57 1000 $2.57 10000 $2.57	Buy Now
	SIHFBE30STRL-GE3	Cut Tape			1	1 $2.57 10 $2.57 100 $2.57 1000 $2.57 10000 $2.57	Buy Now
Vishay Intertechnologies SIHFBE30STRL-GE3 MOSFET N-CHANNEL 800V (Alt: SIHFBE30STRL-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHFBE30STRL-GE3			13 Weeks	800	1 - 10 - 100 - 1000 $1.1368 10000 $0.69765	Buy Now
Mouser Electronics	SIHFBE30STRL-GE3					1 $2.37 10 $2.3 100 $2.16 1000 $0.798 10000 $0.741	Get Quote
Newark	SIHFBE30STRL-GE3	Bulk			800	1 - 10 - 100 - 1000 $0.908 10000 $0.813	Buy Now
TTI	SIHFBE30STRL-GE3	Reel			800	1 - 10 - 100 - 1000 $0.79 10000 $0.74	Buy Now
Vishay Intertechnologies SIHFBE30S-GE3 MOSFET N-CHANNEL 800V (Alt: SIHFBE30S-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHFBE30S-GE3			13 Weeks	1,000	1 - 10 - 100 - 1000 $0.7546 10000 $0.69765	Buy Now
Mouser Electronics	SIHFBE30S-GE3					1 $2.37 10 $1.61 100 $1.14 1000 $0.838 10000 $0.741	Get Quote
Newark	SIHFBE30S-GE3	Bulk			1,000	1 - 10 - 100 - 1000 $0.908 10000 $0.813	Buy Now
Vishay Intertechnologies SIHFBF30S-GE3 MOSFETs TO263 800V 4.1A N-CH MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TTI	SIHFBF30S-GE3	Reel	8,000		1,000	1 - 10 - 100 - 1000 $1.01 10000 $0.95	Buy Now

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SIHFBE30 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
irfbe30 Abstract: No abstract text available Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements	Original	PDF	IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30
irfbe30 Abstract: No abstract text available Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements	Original	PDF	IRFBE30, SiHFBE30 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfbe30
IRFBE30 Abstract: SiHFBE30 SiHFBE30-E3 irfbe30pbf Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements	Original	PDF	IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFBE30 SiHFBE30-E3 irfbe30pbf
s8143 Abstract: IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S SiHFBE30S-E3 Text: IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling Qgd (nC) 45 Configuration	Original	PDF	IRFBE30S, IRFBE30L, SiHFBE30S SiHFBE30L O-263) O-262) 18-Jul-08 s8143 IRFBE30L IRFBE30S SiHFBE30L-E3 SiHFBE30S-E3
Untitled Abstract: No abstract text available Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling	Original	PDF	IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-262) O-263) 11-Mar-11
Untitled Abstract: No abstract text available Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling	Original	PDF	IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-263) O-262) 2002/95/EC. 2002/95/EC 2011/65/EU.
Untitled Abstract: No abstract text available Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling	Original	PDF	IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-262) O-263) 18-Jul-08
AN609 Abstract: IRFBE30L IRFBE30S SiHFBE30S Text: IRFBE30S_RC, SiHFBE30S_RC, IRFBE30L_RC, SiHFBE30L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	IRFBE30S SiHFBE30S IRFBE30L SiHFBE30L AN609, 20-Apr-10 AN609
Untitled Abstract: No abstract text available Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements	Original	PDF	IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
IRFBE30 Abstract: No abstract text available Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements Qgd (nC)	Original	PDF	IRFBE30, SiHFBE30 O-220 O-220 12-Mar-07 IRFBE30
Untitled Abstract: No abstract text available Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements	Original	PDF	IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements	Original	PDF	IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Untitled Abstract: No abstract text available Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements	Original	PDF	IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
irfbe30 Abstract: No abstract text available Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements	Original	PDF	IRFBE30, SiHFBE30 2002/95/EC O-220AB 11-Mar-11 irfbe30

Untitled Abstract: No abstract text available Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling	Original	PDF	IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-262) O-263) 2011/65/EU 2002/95/EC. 2002/95/EC
Untitled Abstract: No abstract text available Text: IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling Qgd (nC) 45 Configuration	Original	PDF	IRFBE30S, IRFBE30L, SiHFBE30S SiHFBE30L O-262) O-263) 12-Mar-07
Untitled Abstract: No abstract text available Text: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 9.6 • Ease of Paralleling 45 • Simple Drive Requirements	Original	PDF	IRFBE30, SiHFBE30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
AN609 Abstract: IRFBE30 SiHFBE30 Text: IRFBE30_RC, SiHFBE30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	IRFBE30 SiHFBE30 AN609, 20-Apr-10 AN609
Untitled Abstract: No abstract text available Text: IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling	Original	PDF	IRFBE30S, SiHFBE30S IRFBE30L, SiHFBE30L 2002/95/EC O-262) O-263) 11-Mar-11
Untitled Abstract: No abstract text available Text: IRFBE30 Power MOSFET FEATURES D TO-220 • Dynamic dV/dt Rating • Repetitive Avalanche Rated G • Fast Switching • Ease of Paralleling S • Simple Drive Requirements G • Lead Pb -free Available D S N-Channel MOSFET DESCRIPTION PRODUCT SUMMARY The TO-220 package is universally preferred for all	Original	PDF	IRFBE30 O-220 O-220 IRFBE30covery

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