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    White Electronic Designs Corp WEDPN4M72V-125BI

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    Quest Components WEDPN4M72V-125BI 14
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    Microchip Technology Inc WEDPN4M72V125B2M

    DRAM Module SDRAM 288Mbit (Alt: WEDPN4M72V125B2M)
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    Avnet Silica WEDPN4M72V125B2M 61 Weeks 1
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    WEDPN4M72V Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    WEDPN4M72V White Electronic Designs 4M x 72 Synchronous DRAM Original PDF
    WEDPN4M72V-100B2M White Electronic Designs 4Mx72 Synchronous DRAM Original PDF
    WEDPN4M72V-100BC White Electronic Designs 4M x 72 Synchronous DRAM Original PDF
    WEDPN4M72V-100BI White Electronic Designs 4M x 72 Synchronous DRAM Original PDF
    WEDPN4M72V-100BM White Electronic Designs 4M x 72 Synchronous DRAM Original PDF
    WEDPN4M72V-125B2M White Electronic Designs 4Mx72 Synchronous DRAM Original PDF
    WEDPN4M72V-125BC White Electronic Designs 4M x 72 Synchronous DRAM Original PDF
    WEDPN4M72V-125BI White Electronic Designs 4M x 72 Synchronous DRAM Original PDF
    WEDPN4M72V-125BM White Electronic Designs 4M x 72 Synchronous DRAM Original PDF
    WEDPN4M72V-133B2M White Electronic Designs 4Mx72 Synchronous DRAM Original PDF
    WEDPN4M72V-XB2X White Electronic Designs 4Mx72 Synchronous DRAM Original PDF
    WEDPN4M72V-XBX White Electronic Designs 4M x 72 Synchronous DRAM Original PDF
    WEDPN4M72V-XBX White Electronic Designs SDRAM BGAs, PowerPC and other high performance memory controllers Original PDF

    WEDPN4M72V Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M72V-XB2X PRELIMINARY* 4Mx72 Synchronous DRAM GENERAL DESCRIPTION FEATURES n n n n n n n n n n n High Frequency = 100, 125MHz Package: • 219 Plastic Ball Grid Array PBGA , 21 x 21mm Single 3.3V ±0.3V power supply Fully Synchronous; all signals registered on positive


    Original     		PDF WEDPN4M72V-XB2X 4Mx72 125MHz WEDPN4M72V-XB2X 32MByte 256Mb) WEDPN4M72V

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz WEDPN4M72V-XBX 32MByte 256Mb) 100MHz

    WEDPN4M72V-XBX

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION ! High Frequency = 100, 125MHz ! Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz, WEDPN4M72V-XBX

    WEDPN

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz* The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz* 32MByte 256Mb) 216-bit 100MHz 125MHz WEDPN

    DQ75

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz DQ75

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF 4Mx72 125MHz WEDPN4M72V-XBX WEDPN4M72V-XBX 32MByte 256Mb) 100MHz 100MHz,

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125MHz Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a


    Original     		PDF 4Mx72 125MHz WEDPN4M72V-XB2X WEDPN4M72V-XB2X 32MByte 256Mb)

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M72V-XB2X PRELIMINARY 4Mx72 Synchronous DRAM GENERAL DESCRIPTION FEATURES  High Frequency = 100, 125MHz  Package:  The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing


    Original     		PDF 4Mx72 125MHz WEDPN16M64V-XB2X WEDPN4M72V-XB2X 32MByte 256Mb) 100MHz WEDPN4M72V

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz

    WEDPN4M72V-XB2X

    Abstract: WEDPN8M72V-XB2X
    Text: White Electronic Designs WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES „ „ GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a


    Original     		PDF WEDPN4M72V-XB2X 4Mx72 133MHz 32MByte 256Mb) 216-bit 133MHz WEDPN4M72V-XB2X WEDPN8M72V-XB2X

    WEDPN16M64VR-XBX

    Abstract: WEDPN16M64V-XBX WEDPN16M72VR-XBX WEDPN16M72V-XBX WEDPN4M64V-XBX WEDPN4M72V-XBX WEDPN8M64VR-XBX WEDPN8M64V-XBX WEDPN8M72VR-XBX WEDPN8M72V-XBX
    Text: SDRAM BGA’s Optimum Density and Performance in One Package Designed to complement the PowerPC and other high performance memory controllers. Organization Part Number Package PBGA Dimensions 4M x 64 WEDPN4M64V-XBX 219 PBGA 21mm x 21mm 4M x 72 WEDPN4M72V-XBX


    Original     		PDF WEDPN4M64V-XBX WEDPN4M72V-XBX WEDPN8M64V-XBX WEDPN8M72V-XBX WEDPN8M64Vnd x64/x72 MIF2023 WEDPN16M64VR-XBX WEDPN16M64V-XBX WEDPN16M72VR-XBX WEDPN16M72V-XBX WEDPN4M64V-XBX WEDPN4M72V-XBX WEDPN8M64VR-XBX WEDPN8M64V-XBX WEDPN8M72VR-XBX WEDPN8M72V-XBX

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF 4Mx72 125MHz WEDPN4M72V-XBX WEDPN4M72V-XBX 32MByte 256Mb) 100MHz 100MHz,

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF 4Mx72 125MHz WEDPN4M72V-XBX WEDPN4M72V-XBX 32MByte 256Mb) 100MHz 100MHz,

    WEDPN4M72V-XB2X

    Abstract: WEDPN8M72V-XB2X
    Text: White Electronic Designs WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION High Frequency = 100, 125, 133MHz Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a


    Original     		PDF WEDPN4M72V-XB2X 4Mx72 133MHz 32MByte 256Mb) 216-bit 133MHz WEDPN4M72V-XB2X WEDPN8M72V-XB2X

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX HI-RELIABILITY PRODUCT 4Mx72 Synchronous DRAM PRELIMINARY* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits.


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz

    Sn63

    Abstract: A104 A108 A113 WEDPN4M64V-XBX WEDPN4M72V-XB2X
    Text: White Electronic Designs WEDPN4M72V-XB2X WEDPN4M64V-XBX PBGA MULTI-CHIP PACKAGE CONSTRUCTION ENCAPSULANT TEST „ Thickness around die = 0.015” to 0.020” typical „ Burn-In – 100%-48 hours at 125°C „ The encapsulant is not injection molded to control


    Original     		PDF WEDPN4M72V-XB2X WEDPN4M64V-XBX Sn63/Pb37 762mm EIA/JESD22 Sn63 A104 A108 A113 WEDPN4M64V-XBX WEDPN4M72V-XB2X

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX White Electronic Designs 4Mx72 Synchronous DRAM* FEATURES n High Frequency = 100, 125MHz n Package: • The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a


    Original     		PDF WEDPN4M72V-XBX 4Mx72 32MByte 256Mb) 216-bit 100MHz 100MHz, 125MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M72V-XB2X 4Mx72 133MHz 32MByte 256Mb) 216-bit 133MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V -XBX WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEA TURES ATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF WEDPN4M72V WEDPN4M72V-XBX 4Mx72 125MHz WEDPN4M72V-XBX 32MByte 256Mb) 100MHz

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M72V-XB2X 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION  High Frequency = 100, 125, 133MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M72V-XB2X 4Mx72 133MHz 32MByte 256Mb) 216-bit 133MHz

    WEDPN4M72V-XBX

    Abstract: No abstract text available
    Text: WEDPN4M72V-XBX 4Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 5 chips containing 67,108,864 bits. Each chip is internally configured as a quadbank DRAM with a synchronous interface. Each of the chip’s


    Original     		PDF WEDPN4M72V-XBX 4Mx72 125MHz 32MByte 256Mb) 216-bit 100MHz WEDPN4M72V-XBX

    W3J2256M72-XPBX

    Abstract: W3J128M64G-XPBX DDR1 512M W3J128M72G-XPBX 256mb EEPROM Memory ddr3 sdram chip 128mb W3H128M72 w3j128m72 BGA NAND Flash W72M64VB-XBX
    Text: Microelectronics Catalog Quick Reference Guide Extended Temperature Plastics — Memories DDR3 SDRAM MCPs Size 1GB 1GB 2GB 4GB Organization 128M x 64 128M x 72 256M x 72 512M x 72 Part Number W3J128M64G-XPBXƒ W3J128M72G-XPBXƒ W3J256M72G-XPBX* W3J2256M72-XPBX*


    Original     		PDF W3J128M64G-XPBX W3J128M72G-XPBX W3J256M72G-XPBX* W3J2256M72-XPBX* W3H32M64E-XSBX W3H32M72E-XSB2X W3H64M64E-XSBX W3H64M72E-XSBX W3H128M72E-XSBX W3H128M64E-XSBX W3J2256M72-XPBX W3J128M64G-XPBX DDR1 512M W3J128M72G-XPBX 256mb EEPROM Memory ddr3 sdram chip 128mb W3H128M72 w3j128m72 BGA NAND Flash W72M64VB-XBX

    Untitled

    Abstract: No abstract text available
    Text: WEDPN4M64V-XBX HI-RELIABILITY PRODUCT 4Mx64 Synchronous DRAM ADVANCED* FEATURES GENERAL DESCRIPTION • High Frequency = 100, 125MHz The 32MByte 256Mb SDRAM is a high-speed CMOS, dynamic random-access ,memory using 4 chips containing 67,108,864 bits. Each chip is internally configured as a quad-bank DRAM with a


    Original     		PDF WEDPN4M64V-XBX 4Mx64 125MHz 32MByte 256Mb) 216-bit 100MHz

    Untitled

    Abstract: No abstract text available
    Text: W332M72V-XBX White Electronic Designs 32Mx72 Synchronous DRAM FEATURES GENERAL DESCRIPTION n High Frequency = 100, 125MHz n Package: The 256MByte 2Gb SDRAM is a high-speed CMOS, dynamic random-access, memory using 5 chips containing 536,870,912 bits. Each chip is internally configured as a


    Original     		PDF W332M72V-XBX 32Mx72 125MHz 256MByte 728-bit W332M72-ESB