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    VTE1261 Price and Stock

    Excelitas Technologies Corporation VTE1261H

    880 nm IRED. T-1 3/4 (5mm),20 mW output power, Narrow beam angle of +/-10o | Excelitas Technologies Sensors VTE1261H
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS VTE1261H Bulk 177 5 Weeks 1
    • 1 $0.42
    • 10 $0.42
    • 100 $0.42
    • 1000 $0.42
    • 10000 $0.42
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    Ozdisan Elektronik VTE1261H
    • 1 $1.18305
    • 10 $1.18305
    • 100 $1.0755
    • 1000 $1.0755
    • 10000 $1.0755
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    Excelitas Technologies Corporation VTE1261FH

    IRED 880 NM - T1-3/4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik VTE1261FH
    • 1 $1.18305
    • 10 $1.18305
    • 100 $1.0755
    • 1000 $1.0755
    • 10000 $1.0755
    		Get Quote

    VTE1261 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTE1261 PerkinElmer Optoelectronics GaAlAs Infrared Emitting Diode Original PDF
    VTE1261 EG&G HIGH POWER GaAIAs INFRARED EMITTING DIODES 880 nm Scan PDF
    VTE1261 EG&G Vactec GaAlAs Infrared Emitting Diodes Scan PDF
    VTE1261F EG&G Vactec GaAlAs Infrared Emitting Diodes Scan PDF
    VTE1261W EG&G HIGH POWER GaAIAs INFRARED EMITTING DIODES 880 nm Scan PDF
    VTE1261W EG&G Vactec GaAlAs Infrared Emitting Diodes Scan PDF

    VTE1261 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GaAlAs Infrared Emitting Diodes VTE1261H, 1262H T-1¾ 5 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high


    Original     		PDF VTE1261H, 1262H VTE1261H VTE1262H

    VTE1261

    Abstract: VTE1262 VTE1281-1 VTE1281-2
    Text: GaAlAs Infrared Emitting Diodes VTE1261, 1262 T-1¾ 5 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high


    Original     		PDF VTE1261, VTE1281-1 VTE1281-2 VTE1261 VTE1262 VTE1281-1 VTE1281-2

    VTE1261H

    Abstract: No abstract text available
    Text: GaAlAs Infrared Emitting Diodes VTE1261H, 1262H T-1¾ 5 mm Plastic Package — 880 nm PACKAGE DIMENSIONS inch (mm) CASE 26 T-1¾ (5 mm) CHIP SIZE: .018" x .018" DESCRIPTION This narrow beam angle 5 mm diameter plastic packaged emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high


    Original     		PDF VTE1261H, 1262H VTE1261H VTE1262H VTE1261H

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTE1063

    Abstract: VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285
    Text: infrared emitting diodes Features 880 nm • Nine standard packages in hermetic and low-cost epoxy • End- and side-radiating packages • Graded Output • High efficiency GaAIAs, 880 nm LPE process Delivers twice the power of conventional GaAs 940 nm emitters


    Original     		PDF VTE7172 VTE7173 VTE1013 VTE1113 VTE3322LA VTE3324LA VTE3372LA VTE3374LA VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2 VTE1285

    VTP1220FBH

    Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
    Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0


    Original     		PDF 2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H

    VTE1291-2

    Abstract: VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2
    Text: GaAlAs Infrared Emitting Diodes VTE1063 TO-46 Flat Window Package — 880 nm PACKAGE DIMENSIONS inch mm CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018" DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher


    Original     		PDF VTE1063 VTE7172 VTE7173 VTE1291-2 VTE1063 VTE1163 VTE1261 VTE1262 VTE1281-1 VTE1281-2 VTE1281F VTE1281W-1 VTE1281W-2

    Untitled

    Abstract: No abstract text available
    Text: V SbE 3a3übOS 000122G GaAIAs Infrared Emitting Diodes VTE1261W, 1262W T-1 3/4 Plastic Package - 880 nm E G & G 7 22 H I V C T T -m VACTE C -i3 PACKAGE DIMENSIONS inch mm 1.00 ( 2 5 .4 ) .2 2 0 ( 5 .5 9 ) •OSO ( 1 .2 7 ) .2 6 (6 .6 ) .0 9 (2 .3 ) .0 3 0 ( 0 .7 6 ) "


    OCR Scan     		PDF 000122G VTE1261W, VTE1261W VTE1262W

    GE 26F

    Abstract: No abstract text available
    Text: SbE D ac^obo^ D D D i s n « vct tdd GaAIAs Infrared Emitting Diodes VTE1261F Flat T-1 3/4 Plastic Package - 880 nm VACT EC PACKAGE D IM EN SIO N S inch mm 1 0 0 (2 5 4) M INIM U M 2 4 0 ( 6 10) _ .3 4 ($ 6 ) .1 7 ( 4 3 ) 0 5 0 (1 2 7 ) .0 2 6 i(0 . 6 6 )


    OCR Scan     		PDF VTE1261F GE 26F

    Untitled

    Abstract: No abstract text available
    Text: aüaübDI D0D121A 07*4 • VCT SbE D GaAIAs Infrared Emitting Diodes VTE1261, 1262 T-1 3/4 Plastic Package — 880 nm '-MI-13 E G 8« G VACTEC PACKAGE DIMENSIONS inch mm i n n Ì95.4Ì iaa in i< ^ Plasöc contour noi controled in region of the leads. DESCRIPTION


    OCR Scan     		PDF D0D121A VTE1261, -MI-13 VTE1261 VTE1262

    VTE1261W

    Abstract: VTE1262W
    Text: 5bE D 3030b[n Q001220 GaAIAs Infrared Emitting Diodes 752 • VCT VTE1261W , 1262W T-1 3/4 Plastic Package — 880 nm T - M I -I3 E G & G VACTEC PACKAGE DIMENSIONS inch mm ■OSO ( 1 . 2 7 ) 1 .0 0 ( 2 5 . 4 ) .2 4 0 ( 6 .J 0 ) M INIM UM .2 2 0 ( 5 .5 9 )


    OCR Scan     		PDF 3030b Q001220 VTE1261W, CASE26W VTE1261W VTE1262W VTE1262W

    VTE1261F

    Abstract: No abstract text available
    Text: SbE aoaobo^ DDGisn lao mvci D GaAIAs Infrared Emitting Diodes VTE1261F Flat T-1 3/4 Plastic Package — 880 nm T - 4 I -is VACTEC P A C K A G E D IM E N S IO N S inch mm D E S C R IP T IO N CASE 26F T-1 3/4 FLAT CHIP SIZE: .018'x.018’ This 5 mm diameter plastic packaged emitter


    OCR Scan     		PDF 30b0T VTE1261F VTE1261F

    Untitled

    Abstract: No abstract text available
    Text: L E D -2 HIGH POWER GaAIAs INFRARED EMITTING DIODES 880 nm VACTEC OPTOELECTRONICS 10900 P AG E BLVD. ST. LO U IS, MO. 63132 U SA PHONE 314-423-4900 TW X 910-764-0811 FEATURES: P R O D U C T DESCRIPTION: •Nine standard packages in herm etic and low-cost epoxy


    OCR Scan     		PDF 0407TP 0405TP 2QMS61 CASE50A

    H0A0872-n55

    Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
    Text: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 2600-70XX 2N5777-80 H0A0872-n55 H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12

    KT853

    Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
    Text: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN


    OCR Scan     		PDF 1N5722 1N5723 1N5724 1N5725 1N6264 1N6265 1N6266 2004-90xx 3N24x 24xTX KT853 KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B

    VTE3171L

    Abstract: T018 VTE1062 VTE1162 VTE1261 VTE1261W VTE3171
    Text: This Material L E D -2 Copyrighted HIGH POWER GaAIAs INFRARED EMITTING DIODES 880 nm J^ E G & G V A C T E C OPTOELECTRONICS By 10900 PAGE BLVD. ST. LOUIS, MO. 63132 USA PHONE 314-423-4900 TWX 910-764-0811 Its Respective FEATU R ES: P R O D U C T D E S C R IP T IO N :


    OCR Scan     		PDF