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    VTB6060 Search Results

    VTB6060 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTB6060 EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB6060 EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB6060B EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB6060B EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB6060J EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB6060J EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB6060UV EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB6060UV EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB6060UVJ EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB6060UVJ EG&G Vactec VTB Process Photodiodes Scan PDF

    VTB6060 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VTB6060J

    Abstract: VTB6061J Vactec 6061J
    Text: SbE D • 3030bCH 0DÜ1 ÜM7 DD3 VTB Process Photodiodes E G & G IVCT VTB6060J, 6061J VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) Large area planar silicon photodiode in a 'flat" w indow , three lead T O -8 pack­


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    PDF 3030bCH VTB6060J, 6061J T-41-51 VTB60oefficient 6x1012 x1013 VTB6060J VTB6061J Vactec 6061J

    VTB6060UVJ

    Abstract: VTB6061UVJ
    Text: SbE D BGaGbDT DDOIDHT Tflb I VCT VTB6060UVJ, 1UVJ VTB Process Photodiodes E G & G V AC TE C T -4 1 -5 1 PACKAGE D IM EN SIO N S inch mm PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated


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    PDF VTB6060UVJ, T-41-51 CASE15A 6x1012 x1013 VTB6060UVJ VTB6061UVJ

    DDD104

    Abstract: VTB6060UV
    Text: SbE ]> • aüaDbDT DDD104Ô T4T IVCT VTB6060UV, 61 UV I VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting "flat" window. Cathode is


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    PDF DDD104Ã VTB6060UV, T-41-51 vtb6060uv vtb6061uv x1013 DDD104 VTB6060UV

    VTB6060

    Abstract: 2X10 VTB6060J VTB6061J 6061J
    Text: SbE » • 3Q3DbDT 0001D147 0D3 VTB Process Photodiodes IVCT VTB6060J, 6061J E G & G VACTEC T -41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Large area planar silicon photodiode in a 'flat" window, three lead TO-8 pack­ age. Chip is isolated from case. The


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    PDF 0001D147 VTB6060J, 6061J T-41-51 VTB6060J 1001c, x1013 VTB6060 2X10 VTB6060J VTB6061J 6061J

    VTB6060B

    Abstract: VTB6061B
    Text: 5bE D 3030b0S DODlOHb 177 H V C T V T B 6 0 6 0B , 6061 B VTB Process Photodiodes E G & G VACTEC T -41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in a “flat" window, dual lead TO-8 pack­ age. The package incorporates an in­


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    PDF VTB6060B, T-41-51 x1012 xlO12 VTB6060B VTB6061B

    dual photodiode

    Abstract: VTB6060B Photodiodes 6061 vactec VTB6061B
    Text: 5bE T> 3D3DbD^ DOOlOHb 177 H V C T VTB Process Photodiodes V T B 6 0 6 0 B , 6061 B E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in a “flat" window, dual lead TO-8 pack­ age. The package incorporates an in­


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    PDF VTB6060B, T-41-51 VTB6060B VTB6061B 7x1012 x1012 dual photodiode VTB6060B Photodiodes 6061 vactec VTB6061B

    TB505

    Abstract: No abstract text available
    Text: VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS PRODUCT DESCRIPTION FEATURES • • • • • This series of P on N silico n d iod es is primarily intended for use in the photovoltaic mode but may be used with a small reverse bias. The diod es have


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    PDF 365nm, at220nm. VTS2011 VTS20â TB505

    VTB6061

    Abstract: diode 1334 UV led 200 nm peak uv led 365 VTB6060UVJ
    Text: SbE aoaobm D □ □ o ic m 'ì Tab VTB Process Photodiodes E G Ì VCT V T B 6060U V J, 1 UVJ & G VACTEC T -4 1 -5 1 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) Large area planar silicon photodiode in


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    PDF VTB6060UVJ, t-41-51 6x1012 x1013 VTB6061 diode 1334 UV led 200 nm peak uv led 365 VTB6060UVJ

    VTB6060

    Abstract: VTB6061
    Text: 5bE D 3030^0^ DÜÜ1DMS B3D H V C T V T B 6 0 6 0 , 6061 VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm CASE 15 PRODUCT DESCRIPTION Large area planar silicon photodiode in a 'flat" window, dual lead TO-8 pack­ age. Cathode is common to the case.


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    PDF VTB6060, T-41-51 VTB6060 1001c, 6x1012 VTB6060 VTB6061

    Photodiodes 6061 vactec

    Abstract: VTB6060 VTB6061 Vactec VT
    Text: 5bE D • 3030t>0^ 0001D45 B30 H V C T V T B 6 0 6 0 , 6 06 1 VTB Process Photodiodes E G & G VACTEC T-4 1-5 1 PACKAGE DIMENSIONS inch mm CASE 15 PRODUCT DESCRIPTION Largearea planar silicon photodiode in a "flat" window, dual lead TO-8 pack­ age. Cathode is common to the case.


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    PDF 3030t 0001D45 VTB6060, T-41-51 VTB6060 6x1012 xlO13 Photodiodes 6061 vactec VTB6060 VTB6061 Vactec VT

    5041J

    Abstract: photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B
    Text: This Material VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS Copyrighted P R O D U C T D ESC RIPTIO N FEATURES • Enhanced UV to IR spectral range. • Integral IR rejection filters available • No UV enhancement- By Its • Response @ 220 nm, 0.06 A/W, Typ with


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    PDF 365nm, at220nm. 100mW/cm' 200mW/cmJ 5041J photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B

    UV diode 365 nm

    Abstract: dual photodiode uv led 365 L-487 VTB6060UV VTB6061UV Vactec
    Text: SbE ]> Hi 3 D 3 0 b D cl DQD104Ô T^T H V C T VTB Process Photodiodes V T B 6 0 6 0 U V , 61 UV E G & 6 VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting "flat" window. Cathode is


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    PDF T-41-51 VTB6060UV, VTB6060UV VTB6061UV x1013 UV diode 365 nm dual photodiode uv led 365 L-487 VTB6060UV VTB6061UV Vactec