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    VTB6061UV Price and Stock

    Excelitas Technologies Corporation VTB6061UVJH

    SENSOR PHOTODIODE 920NM TO233AA
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    RS VTB6061UVJH Bulk 1
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    Excelitas Technologies Corporation VTB6061UVH

    Photo Diode; No. Of Pins:2Pins; Diode Case Style:To-8; Wavelength Of Peak Sensitivity:920Nm; Angle Of Half Sensitivity ±:55°; Dark Current:2000Pa; Operating Temperature Min:-40°C; Operating Temperature Max:110°C; Product Range:- Rohs Compliant: Yes |Excelitas Tech VTB6061UVH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark VTB6061UVH Bulk 250
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    RS VTB6061UVH Bulk 1
    • 1 $51.81
    • 10 $46.63
    • 100 $46.63
    • 1000 $46.63
    • 10000 $46.63
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    VTB6061UV Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VTB6061UV PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB6061UV EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB6061UV EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB6061UV EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB6061UVJ PerkinElmer Optoelectronics VTB Process Photodiode Original PDF
    VTB6061UVJ EG&G BLUE ENHANCED ULTRA HIGH DARK RESISTANCE Scan PDF
    VTB6061UVJ EG&G Vactec VTB Process Photodiodes Scan PDF
    VTB6061UVJ EG&G Vactec VTB Process Photodiodes Scan PDF

    VTB6061UV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB6061UVJH PACKAGE DIMENSIONS inch mm CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is


    Original     		PDF VTB6061UVJH

    uv led 365

    Abstract: 22001 VTB6061UVH
    Text: VTB Process Photodiodes VTB6061UVH PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting “flat” window. Cathode is common to the case. These


    Original     		PDF VTB6061UVH uv led 365 22001 VTB6061UVH

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB6061UVJ PACKAGE DIMENSIONS inch mm CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is


    Original     		PDF VTB6061UVJ

    VTB6061UVJH

    Abstract: D92-02 uv led 365
    Text: VTB Process Photodiodes VTB6061UVJH PACKAGE DIMENSIONS inch mm CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is


    Original     		PDF VTB6061UVJH VTB6061UVJH D92-02 uv led 365

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB6061UV PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting “flat” window. Cathode is common to the case. These


    Original     		PDF VTB6061UV

    D92-02

    Abstract: d9202 uv led 365 VTB6061UVJ
    Text: VTB Process Photodiodes VTB6061UVJ PACKAGE DIMENSIONS inch mm CASE 15A TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) PRODUCT DESCRIPTION Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is


    Original     		PDF VTB6061UVJ D92-02 d9202 uv led 365 VTB6061UVJ

    Untitled

    Abstract: No abstract text available
    Text: VTB Process Photodiodes VTB6061UVH PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting “flat” window. Cathode is common to the case. These


    Original     		PDF VTB6061UVH

    uv led 365

    Abstract: VTB6061UV
    Text: VTB Process Photodiodes VTB6061UV PACKAGE DIMENSIONS inch mm CASE 15 TO-8 HERMETIC CHIP ACTIVE AREA: .058 in2 (37.7 mm2) Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting “flat” window. Cathode is common to the case. These


    Original     		PDF VTB6061UV uv led 365 VTB6061UV

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    VTB8440

    Abstract: VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B
    Text: VTB Process Photodiodes VTB100 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Planar silicon photodiode in a clear molded plastic sidelooker package suitable for assembly onto printed circuit boards. These diodes have very high shunt resistance and have good blue


    Original     		PDF VTB100 VTB9413B VTB8440 VTB8441 VTB8440B VTB1013B VTB1113 2122 opto VTB1012B 1013B VTB1112 VTB6061B

    VTP1220FBH

    Abstract: VTS3082 VTB9412BH VTB1013B VTP1012H VTS3185H VTB8441BH VTD34H VTS3085H VTP4085H
    Text: 1745-2012:QuarkCatalogTempNew 9/17/12 5:02 PM Page 1745 20 Photodiodes, Phototransistors and IR Emitters RoHS Electrical/Optical Characteristics @ 25°C Stock No. Fig. Dark Current IO Shunt Resist. RSH Spectral Application Range H=100 fC 2850K A/W @ nm H=0


    Original     		PDF 2850K VTS3082H VTS3085H VTS3185H VTS3082H VTS3085H VTS3185H VTP1220FBH VTS3082 VTB9412BH VTB1013B VTP1012H VTB8441BH VTD34H VTP4085H

    Untitled

    Abstract: No abstract text available
    Text: VTB6061UVJ VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION C A S E 16A Large area planar silicon photodiode in a three lead TO-8 package with a UV transmitting window. Chip is isolated from case. Third lead is grounded to case. These diodes have very high shunt


    OCR Scan     		PDF VTB6061UVJ D001571

    Untitled

    Abstract: No abstract text available
    Text: VTB6061UV VTB Process Photodiodes PACKAGE DIM ENSIO N S inch mm PRODUCT DESCRIPTION CASE 15 T O -8 HERMETIC J 'r(37.7 n m 'l CHIP ACTIVE AREA: .058 in Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting “flat” window. Cathode is


    OCR Scan     		PDF VTB6061UV

    UV diode 365 nm

    Abstract: UV led 200 nm peak uv led 365 VTB6061UVJ
    Text: VTB6061UVJ VTB Process Photodiodes PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION C ASE IS A Large area planar silicon photodiode in a three lead TO -8 package with a UV transmitting window. Chip is isolated from case. Third lead is grounded to case. These diodes have very high shunt


    OCR Scan     		PDF VTB6061UVJ 10UIS, UV diode 365 nm UV led 200 nm peak uv led 365 VTB6061UVJ

    VTB6061

    Abstract: uv led 365 VTB6061UV V0112
    Text: VTB6061 UV VTB Process Photodiodes PACKAGE DIMENSIONS inch mm 1 .5 0 (3 8 . 1) • 1 9 6 (4 .9 8 ) PRODUCT DESCRIPTION CASE 15 Large area planar silicon photod iod ein a dual lead T O -8 package with a U V transm itting “flat” w indow . Cathode is com m on to case. Th e se diodes have


    OCR Scan     		PDF VTB6061 VTB6061UV 3D30b0T uv led 365 VTB6061UV V0112

    TB505

    Abstract: No abstract text available
    Text: VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS PRODUCT DESCRIPTION FEATURES • • • • • This series of P on N silico n d iod es is primarily intended for use in the photovoltaic mode but may be used with a small reverse bias. The diod es have


    OCR Scan     		PDF 365nm, at220nm. VTS2011 VTS20â TB505

    DDD104

    Abstract: VTB6060UV
    Text: SbE ]> • aüaDbDT DDD104Ô T4T IVCT VTB6060UV, 61 UV I VTB Process Photodiodes E G & G VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION CASE 15 Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting "flat" window. Cathode is


    OCR Scan     		PDF DDD104Ã VTB6060UV, T-41-51 vtb6060uv vtb6061uv x1013 DDD104 VTB6060UV

    5041J

    Abstract: photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B
    Text: This Material VTB BLUE ENHANCED ULTRA HIGH DARK RESISTANCE PROCESS Copyrighted P R O D U C T D ESC RIPTIO N FEATURES • Enhanced UV to IR spectral range. • Integral IR rejection filters available • No UV enhancement- By Its • Response @ 220 nm, 0.06 A/W, Typ with


    OCR Scan     		PDF 365nm, at220nm. 100mW/cm' 200mW/cmJ 5041J photodiode vtb 5041 VTB8440B operational amplifier-741 thermopile array 5050J VTB1013B VTB8444B 9415B VTB1012B

    UV diode 365 nm

    Abstract: dual photodiode uv led 365 L-487 VTB6060UV VTB6061UV Vactec
    Text: SbE ]> Hi 3 D 3 0 b D cl DQD104Ô T^T H V C T VTB Process Photodiodes V T B 6 0 6 0 U V , 61 UV E G & 6 VACTEC T-41-51 PACKAGE DIMENSIONS inch mm PRODUCT DESCRIPTION Large area planar silicon photodiode in a dual lead TO-8 package with a UV transmitting "flat" window. Cathode is


    OCR Scan     		PDF T-41-51 VTB6060UV, VTB6060UV VTB6061UV x1013 UV diode 365 nm dual photodiode uv led 365 L-487 VTB6060UV VTB6061UV Vactec