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    Nexperia 74HC1G08GV-Q100,12

    IC GATE AND 1CH 2-INP SC74A
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    DigiKey 74HC1G08GV-Q100,12 Cut Tape 6,221 1
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    Nexperia 74AHC1G08GV-Q100,1

    IC GATE AND 1CH 2-INP SC74A
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    Mouser Electronics 74AHC1G08GV-Q100,1 23,897
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    Nexperia 74HC1G02GV-Q100,12

    IC GATE NOR 1CH 2-INP SC74A
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    Mouser Electronics 74HC1G02GV-Q100,12
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    Rochester Electronics 74HC1G02GV-Q100,12 153,000 1
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    TTI 74HC1G02GV-Q100,12 Reel 9,000
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    Nexperia 74LVC1G66GV-Q100,1

    IC SWITCH SPST-NOX1 10OHM SC74A
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    DigiKey 74LVC1G66GV-Q100,1 Digi-Reel 2,578 1
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    Avnet Americas 74LVC1G66GV-Q100,1 Reel 6 Weeks 12,000
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    Mouser Electronics 74LVC1G66GV-Q100,1 7,550
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    Rochester Electronics 74LVC1G66GV-Q100,1 81,000 1
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    TTI 74LVC1G66GV-Q100,1 Reel 6,000
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    New Advantage Corporation 74LVC1G66GV-Q100,1 6,000 1
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    Nexperia 74LVC1G14GV-Q100,1

    IC INVERT SCHMITT 1CH 1INP SC74A
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    DigiKey 74LVC1G14GV-Q100,1 Digi-Reel 1,984 1
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    Mouser Electronics 74LVC1G14GV-Q100,1 7,534
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    VQ1001 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    VQ1001J Vishay Intertechnology Quad N-Channel 30-V (D-S) MOSFET Original PDF
    VQ1001J Unknown FET Data Book Scan PDF
    VQ1001J Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VQ1001J Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VQ1001J Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    VQ1001P Vishay Intertechnology Quad N-Channel 30-V (D-S) MOSFET Original PDF
    VQ1001P Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 4N-CH 30V 830MA 14DIP Original PDF
    VQ1001P Unknown Semiconductor Master Cross Reference Guide Scan PDF
    VQ1001P Unknown FET Data Book Scan PDF
    VQ1001P Unknown Shortform Datasheet & Cross References Data Short Form PDF
    VQ1001P Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    VQ1001P Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    VQ1001P-2 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 4N-CH 30V 830MA 14DIP Original PDF
    VQ1001P-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 4N-CH 30V 830MA 14DIP Original PDF

    VQ1001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VQ1001J

    Abstract: VQ1001P
    Text: VQ1001J/P Vishay Siliconix Quad N-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 VQ1001P 1 @ VGS = 12 V 0.8 to 2.5 0.53 FEATURES BENEFITS APPLICATIONS D D D D D D D


    Original
    PDF VQ1001J/P VQ1001P VQ1001J S-04279--Rev. 16-Jul-01 VQ1001J VQ1001P

    n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

    Abstract: VQ1001P VQ1001 FAST DMOS FET Switches n-CHANNEL sired Switching Silicon Power P-channel Fast Data Book Supertex Quad
    Text: VQ1001 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 30V 1.0Ω 2.0A Order Number / Package Quad Ceramic DIP* VQ1001P * 14 pin side brazed ceramic DIP Advanced DMOS Technology High Reliability Devices


    Original
    PDF VQ1001 VQ1001P n-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR VQ1001P VQ1001 FAST DMOS FET Switches n-CHANNEL sired Switching Silicon Power P-channel Fast Data Book Supertex Quad

    VQ1001J

    Abstract: VQ1001P
    Text: VQ1001J/P Siliconix NĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VQ1001J 30 VQ1001P rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 1 @ VGS = 12 V 0.8 to 2.5 0.53 Features Benefits Applications


    Original
    PDF VQ1001J/P VQ1001J VQ1001P P-37655--Rev. VQ1001J VQ1001P

    VQ1001J

    Abstract: VQ1001P
    Text: VQ1001J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VQ1001J 30 VQ1001P rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 1 @ VGS = 12 V 0.8 to 2.5 0.53 Features Benefits Applications D D D D


    Original
    PDF VQ1001J/P VQ1001J VQ1001P S-52426--Rev. 14-Apr-97 VQ1001J VQ1001P

    Untitled

    Abstract: No abstract text available
    Text: VQ1001J/P Vishay Siliconix Quad N-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 VQ1001P 1 @ VGS = 12 V 0.8 to 2.5 0.53 FEATURES BENEFITS APPLICATIONS D D D D D D D


    Original
    PDF VQ1001J/P VQ1001J VQ1001P 08-Apr-05

    VQ1001J

    Abstract: VQ1001P
    Text: VQ1001J/P N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VQ1001J 30 VQ1001P rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 1 @ VGS = 12 V 0.8 to 2.5 0.53 Features Benefits Applications D D D D


    Original
    PDF VQ1001J/P VQ1001J VQ1001P S-52426--Rev. 14-Apr-97 VQ1001J VQ1001P

    VQ1001J

    Abstract: VQ1001P
    Text: VQ1001J/P Vishay Siliconix Quad N-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) 1 @ VGS = 12 V 0.8 to 2.5 0.83 VQ1001P 1 @ VGS = 12 V 0.8 to 2.5 0.53 FEATURES BENEFITS APPLICATIONS D D D D D D D


    Original
    PDF VQ1001J/P VQ1001P VQ1001J 18-Jul-08 VQ1001J VQ1001P

    TN0604N3

    Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
    Text: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -


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    PDF 2N6659 VN2210N2 TN0104N3 2N7007 TN5325N3 AN0332 AP0332 VN2110K1 BSS123 DN2535 TN0604N3 HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex

    VN0300M

    Abstract: VN0300D VQ7254J VQ7254P 25XX VP1001P VQ1001J VQ3001J VQ3001P VNMH03
    Text: Pulse width 80^s—300^s, Duty cycle 1%, Tc=25°C Part Numbers: VN0300D, VN0300M, VP1001P, VQ1001J, Segments 1 and 3: VQ3001P, VQ3001J, VQ7254P, VQ7254J Leakage Currents Ohmic Region T c — CASE TEMPERATURE (°C) ON Resistance Characteristics Temperature Effects on rps(on)


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    PDF VNMH03 80pisâ 300pis, VN0300D, VN0300M, VP1001P, VQ1001J, VQ3001P, VQ3001J, VQ7254P, VN0300M VN0300D VQ7254J VQ7254P 25XX VP1001P VQ1001J VQ3001J VQ3001P VNMH03

    Untitled

    Abstract: No abstract text available
    Text: VQ1001 Çj Super tex inc. N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Standard Commercial Devices BVdss/ BVpcs 30V f*DS ON) Order Number / Package • c kon ) (max) (min) Quad Ceramic DIP* 1.0Î1 2.0A VQ1001P * 1 4 pin side b ra zed ceram ic D IP


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    PDF VQ1001 VQ1001P

    VQ1001

    Abstract: No abstract text available
    Text: VQ1001 SERIES N-Channel Enhancement-Mode _MOS Transistor Arrays 14-PIN DIP SIDEBRAZE PRODUCT SUMMARY PART NUMBER V BR DSS VQ1001J 30 VQ1001P 30 TOP VIEW Dual-ln-Line Package •d (A) PACKAGE 1 0.83 Plastic 1 0.83 Sidebraze " w ¡T [I G1 [7


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    PDF VQ1001 VQ1001J VQ1001P 14-PIN VNDQ03

    52426

    Abstract: No abstract text available
    Text: T em ic VQIOOIJ/P S e m i c o n d u c t o r s N-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V{BR DSS M in V) rDS(on) M a x (Q ) VGS(tht (V ) Id (A) 1 @ VGS- 12 V 0.8 to 2.5 0.83 ] @ VGs = 12 V 0.8 to 2.5 0.53 VQ1001J 30 VQ1001P


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    PDF VQ1001J VQ1001P S-52426-- 14-Apr-97 VQ1001J/P 52426

    VN46AFD

    Abstract: VNDQ1 vnd02 TD1001 VN46AF
    Text: m95SË VNDQ SERIES DIE N-Channel Enhancement-Mode MOS Transistors PART NUM BER V BR DSS (V) r DS(ON) VNDQ1CHP 30 1.2 VNDQ2CHP 60 1.8 (A) • • • • • TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P (VNDQ03 x 4) TD1001Y (VNDQ03 x 2) TQ1001J (VNDQ03 x 4)


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    PDF TN0201L, TN0401L VN0300L, VN0300M VQ1001J/P VNDQ03 TD1001Y TQ1001J VN46AFD VNDQ1 vnd02 TD1001 VN46AF

    Untitled

    Abstract: No abstract text available
    Text: VQ1001 N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package b v dss/ ^D S O N b v dgs (max) (min) Quad Ceramic DIP* 30V 1.0Q 2.0A VQ1001P ^D(ON) * 14 pin side brazed ceram ic DIP Advanced DMOS Technology High Reliability Devices


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    PDF VQ1001 VQ1001P 300ns

    A773* Transistor

    Abstract: fl7732c VQ1001P
    Text: VQ1001 ^ Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information Order Number / Package BV DSS/ ^DS O N b v dgs (max) (min) Quad Ceramic DIP* 30V i.o a 2.0A VQ1001P ^D(ON) * 14 pin side brazed ceramic DIP Advanced DMOS Technology


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    PDF VQ1001 VQ1001P --25S2 A7732TS D00443Ô A773* Transistor fl7732c VQ1001P

    Untitled

    Abstract: No abstract text available
    Text: .BlSSSte VNDQ03 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE DEVICE Single TO-92 TO-226AA VN0300L, TN0201L, TN0401L Single TO-237 VN0300M Single 14-Pln Plastic • VQ1001J Quad 14-Pln Dual-ln-Une • VQ1001P Quad Chip • Available as VNDQ1CHP


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    PDF VNDQ03 VN0300L, TN0201L, TN0401L VN0300M VQ1001J VQ1001P O-226AA) O-237 14-Pln

    VQ1001P

    Abstract: No abstract text available
    Text: VQ1001J/P Vishay Siliconix Quad N-Channel 30-V D-S MOSFETs PRODUCT SUMMARY Part Number V (B R )D SS M i n ( V ) r D S (on) VQ1001J Max (Q ) V G S (th ) Id (A) (V) 1 @ VG S= 12 V 0.8 to 2.5 0.83 1 @ Vg s =12V 0.8 to 2.5 0.53 30 VQ1001P FEATURES BENEFITS APPLICATIONS


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    PDF VQ1001J/P VQ1001J VQ1001P S-04279-- 16-Jul-01

    VQ1001

    Abstract: No abstract text available
    Text: T e m ic VQIOOIJ/P Siliconix N-Channel Enhancement-Mode MOS "Transistors Product Summary Part Num ber V BR DSS M in (V) VQ1001J rDS(on) M ax (Q ) 30 VQ1001P 1 @ VGS = 12 V 0.8 to 2.5 0.83 1 @ V GS= 12 V 0.8 to 2.5 0.53 Features Benefits Applications • •


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    PDF VQ1001J VQ1001P P-37655--Rev. VQ1001J/P VQ1001

    2sk to-92

    Abstract: VNS012A Siliconix v020 VNS009A VNS009D VNS013A VNT0080 VNT008A VNT009A
    Text: - 330 - 13=25=0 Si £ tt Vd s or € * Vd g % (V) Vg s Id * /CH (V) (A) 4# •u Pd Ig s s loss max * /CH (W) (nA) Vg s (V) Vd s (V) (kiA) (V) (V) (nA) 14 (Ta=25°C) b(on) Vd s = Vg s Ciss g fs Coss Crss ft & flt % V g s =0 (max) *typ V g s (0) (V) *typ (A)


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    PDF VNS009A O-204AA VNS009D O-220AB VNS012A O-204AE VQ1006P VQ2001J VQ2001P v02004j 2sk to-92 Siliconix v020 VNS013A VNT0080 VNT008A VNT009A

    VQ1000P

    Abstract: VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) 60 60 5.0 5.0 240 240 170 170 6.0 10.0 6.0 Power Dissipation (Watts) . Part Number 0.2 0.2 0.315 0.315 VN10KE VN10LE 0.3 0.25 0.3 0.25 0.3 0.25


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    PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VQ1000P VN10L siliconix VN10KM VN0610L VN10KE VN10KM VN10LE VN10LM VN2222L VQ1000J

    irf540 TTL

    Abstract: IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642
    Text: Pin© jopeies aaMOdSOW MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1 -6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170 150 150 150 150


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    PDF IRF640 IRF642 IRF630 IRF632 IRF620 IRF622 VN1706D IRF641 IRF643 IRF631 irf540 TTL IRF620 IRF622 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642

    buz 350 equivalent

    Abstract: VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM
    Text: Siliconix 1-1? f l MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) •d Continuous (Amps) Power Dissipation (Watts) . Part Number 60 60 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 240 240 170 170 10.0 6.0 0.3 0.25


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    PDF O-220 VN1000D IRF522 VN1000A IRF540 IRF632 IRF640 buz 350 equivalent VN0109n5 analog VN10KM equivalent supertex VN10KE VN67ad analog VN0300M equivalent VQ1004 equivalent vq1004 sony 2sj54 siliconix VN10KM

    VN0300M

    Abstract: siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J
    Text: MOSPOWER Selector Guide Continued NChannel MOSPOWER (Continued) Breakdown Voltage (Volts) 60 60 • d Continuous (Amps) Power Dissipation (Watts) . Part Number 5.0 5.0 0.2 0.2 0.315 0.315 VN10KE VN10LE 6.0 0.3 0.25 0.3 0.25 0.3 0.25 0.35 0.4 0.3 0.3 0.25


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    PDF vn10ke vn10le to-52 vn2406m vn2410m VW1706M vn1710m vn1206m vn1210m vn0808m VN0300M siliconix VN10KM VN0606M 25XX VN0300D VP1001P VQ1001J VQ3001J VQ3001P VQ7254J

    VN2410L equivalent

    Abstract: VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450
    Text: 1-17 MOSPOWER Cross Reference List c « g s s <0J= i n i n m i n • - CM CM CM ^ • 'd d d o d 1o o o o o I m iD lO m | ' r r r 's ' I O O < O Ò I I I I I | ' ' ' lO ' I P ' ' ' ' I I j j CO00 COCO j j ' I o o r i mm | ioom m I L -^ ^ l I c\i CM i I I I I OOOO ' ' I


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    PDF ivn6100tnu to-39 ivn6200cnd to-220 vn0401d ivn6200cne t0-220 irf533 ivn6200cnf VN2410L equivalent VN1210M equivalent VN2410L "cross reference" VN2410M VN0300M equivalent MTM8N20 VN1710M IRF340 IRF350 IRF450