Untitled
Abstract: No abstract text available
Text: OSB9215-14A Diodes Center-Tapped Positive CC Silicon Rectifier I O Max.(A) Output Current5 @Temp (øC) (Test Condition)35’ V(RRM)(V) Rep.Pk.Rev. Voltage10.5k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.360¥ V(FM) Max.(V) Forward Voltage12.6 @I(FM) (A) (Test Condition)50
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OSB9215-14A
Voltage10
Voltage12
Current600u
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Untitled
Abstract: No abstract text available
Text: V12ZA1 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage12 V(RMS) Max. Applied Voltage6.0 V(DC) Max. Applied Voltage8.0 I(TM) Max.(A) Peak Current250 V(C) Nom. (V) Clamping Voltage34 @I(PP) (A) (Test Condition)5.0 W(TM) Max.(J) Transient Energy600m
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V12ZA1
Voltage12
Current250
Voltage34
Energy600m
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Untitled
Abstract: No abstract text available
Text: SKBB40C3701/2201 Diodes Single-Phase Full-Wave Bridge Rectifier Military/High-RelN I O Max.(A) Output Current2.7 @Temp (øC) (Test Condition)45’ V(RRM)(V) Rep.Pk.Rev. Voltage120 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.115 V(FM) Max.(V) Forward Voltage @I(FM) (A) (Test Condition)
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SKBB40C3701/2201
Voltage120
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Untitled
Abstract: No abstract text available
Text: PH1270-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.250f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage120 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W) Semiconductor MaterialSilicon Package StylePin Mounting StyleS
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PH1270-2
Voltage120
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Untitled
Abstract: No abstract text available
Text: V120ZT05 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage120 V(RMS) Max. Applied Voltage75 V(DC) Max. Applied Voltage102 I(TM) Max.(A) Peak Current400 V(C) Nom. (V) Clamping Voltage205 @I(PP) (A) (Test Condition)5.0 W(TM) Max.(J) Transient Energy3.0
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V120ZT05
Voltage120
Voltage75
Voltage102
Current400
Voltage205
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Untitled
Abstract: No abstract text available
Text: V120MT1A Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage120 V(RMS) Max. Applied Voltage72 V(DC) Max. Applied Voltage97 I(TM) Max.(A) Peak Current100 V(C) Nom. (V) Clamping Voltage220 @I(PP) (A) (Test Condition)2.0 W(TM) Max.(J) Transient Energy400m
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V120MT1A
Voltage120
Voltage72
Voltage97
Current100
Voltage220
Energy400m
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Untitled
Abstract: No abstract text available
Text: MO312CP Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.750f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage12 Q Factor Min. f(co) Min. (Hz) Cut-off freq.120G P(D) Max. (W)0.3 Semiconductor MaterialSilicon Package StylePill-C
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MO312CP
Voltage12
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Untitled
Abstract: No abstract text available
Text: VE07M00950K Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage150 V(RMS) Max. Applied Voltage95 V(DC) Max. Applied Voltage125 I(TM) Max.(A) Peak Current400 V(C) Nom. (V) Clamping Voltage250 @I(PP) (A) (Test Condition)5.0 W(TM) Max.(J) Transient Energy2.5
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VE07M00950K
Voltage150
Voltage95
Voltage125
Current400
Voltage250
Time25n
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Untitled
Abstract: No abstract text available
Text: TNR9G121KM Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage120 V(RMS) Max. Applied Voltage75 V(DC) Max. Applied Voltage102 I(TM) Max.(A) Peak Current1.0k V(C) Nom. (V) Clamping Voltage195 @I(PP) (A) (Test Condition)10 W(TM) Max.(J) Transient Energy5.0
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TNR9G121KM
Voltage120
Voltage75
Voltage102
Voltage195
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Untitled
Abstract: No abstract text available
Text: OA679-100 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current1.5 @Temp (øC) (Test Condition)40’ V(RRM)(V) Rep.Pk.Rev. Voltage120 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.80 V(FM) Max.(V) Forward Voltage1.15 @I(FM) (A) (Test Condition)5.0 @Temp. (øC) (Test Condition)25õ
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OA679-100
Voltage120
Current10u
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Untitled
Abstract: No abstract text available
Text: LR120A Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage12 @I(Z) (A) (Test Condition)5.0m Tolerance (%)1 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.30 Temp Coef pp/10k9.0 Maximum Operating Temp (øC)150’
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LR120A
Voltage12
pp/10k9
StyleDO-35
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Untitled
Abstract: No abstract text available
Text: SEM120 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current10m V(RRM)(V) Rep.Pk.Rev. Voltage12k t(rr) Max.(s) Rev.Rec. Time500n @I(F) (A) (Test Condition)5.0m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage20 @I(FM) (A) (Test Condition)10m
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SEM120
Current10m
Voltage12k
Time500n
Voltage20
Current500n
Current20u
StyleAxial-10
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Untitled
Abstract: No abstract text available
Text: MZT3311 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage12 @I(Z) (A) (Test Condition)1.0 Tolerance (%)20 P(D) Max. (W)50 Z(z) Max. (ê) Dyn. Imped.1.0 Temp Coef pp/10k Maximum Operating Temp (øC)150õ Package StyleTO-220AC
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MZT3311
Voltage12
pp/10k
StyleTO-220AC
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Untitled
Abstract: No abstract text available
Text: TNR12G121KM Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage120 V(RMS) Max. Applied Voltage75 V(DC) Max. Applied Voltage102 I(TM) Max.(A) Peak Current2k V(C) Nom. (V) Clamping Voltage195 @I(PP) (A) (Test Condition)25 W(TM) Max.(J) Transient Energy12
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TNR12G121KM
Voltage120
Voltage75
Voltage102
Voltage195
Energy12
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Untitled
Abstract: No abstract text available
Text: IDA1Z128 Diodes Double-Anode Reference/Regulator Diode V Z Nom.(V) Reference Voltage128 @I(Z) (A) (Test Condition)8.0m Tolerance (%)5ì P(D) Max. (W)1.0 Z(z) Max. (ê) Dyn. Imped. Temp Coef pp/10k Maximum Operating Temp (øC)200’ Package StyleAxial-23 Mounting StyleT
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IDA1Z128
Voltage128
pp/10k
StyleAxial-23
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MMC1204
Abstract: No abstract text available
Text: MMC1204 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current1.5 V(RRM)(V) Rep.Pk.Rev. Voltage125 t(rr) Max.(s) Rev.Rec. Time75n @I(F) (A) (Test Condition)1 @I(R) (A) (Test Condition)500m V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)1.5
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MMC1204
Voltage125
Time75n
StyleDO-41
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Untitled
Abstract: No abstract text available
Text: Z21L151 Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage150 V(RMS) Max. Applied Voltage90 V(DC) Max. Applied Voltage120 I(TM) Max.(A) Peak Current2.0k V(C) Nom. (V) Clamping Voltage @I(PP) (A) (Test Condition) W(TM) Max.(J) Transient Energy15
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Z21L151
Voltage150
Voltage90
Voltage120
Energy15
Time50n
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Untitled
Abstract: No abstract text available
Text: RH4899 Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage12.8 @I(Z) (A) (Test Condition)500u Tolerance (%)5 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.400 Temp Coef pp/10k100m Maximum Operating Temp (øC)100
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RH4899
Voltage12
pp/10k100m
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Untitled
Abstract: No abstract text available
Text: SK3443 Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current2.2m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage45k I(FSM) Max.(A) Pk.Fwd.Sur.Cur.200m V(FM) Max.(V) Forward Voltage120 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)
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SK3443
Voltage45k
Voltage120
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Untitled
Abstract: No abstract text available
Text: PL0170-2 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.250f C1/C2 Min. Capacitance Ratio V(RRM)(V) Rep.Pk.Rev. Voltage120 Q Factor Min. f(co) Min. (Hz) Cut-off freq.10G P(D) Max. (W).35 Semiconductor MaterialSilicon Package StylePill-C
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PL0170-2
Voltage120
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Untitled
Abstract: No abstract text available
Text: LR120E Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage12 @I(Z) (A) (Test Condition)5.0m Tolerance (%)15 P(D) Max. (W)400m Z(z) Max. (ê) Dyn. Imped.30 Temp Coef pp/10k9.0 Maximum Operating Temp (øC)150’
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LR120E
Voltage12
pp/10k9
StyleDO-35
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Untitled
Abstract: No abstract text available
Text: SVC121D05A Diodes Metal-Oxide Varistor MOV V(DC) Nom.(V) Varistor Voltage120 V(RMS) Max. Applied Voltage V(DC) Max. Applied Voltage102 I(TM) Max.(A) Peak Current V(C) Nom. (V) Clamping Voltage210 @I(PP) (A) (Test Condition)5.0 W(TM) Max.(J) Transient Energy2.8
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SVC121D05A
Voltage120
Voltage102
Voltage210
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Untitled
Abstract: No abstract text available
Text: SEF120 Diodes General Purpose Fast Rectifier Military/High-RelN I O Max.(A) Output Current10m V(RRM)(V) Rep.Pk.Rev. Voltage12k t(rr) Max.(s) Rev.Rec. Time150n @I(F) (A) (Test Condition)5.0m @I(R) (A) (Test Condition)10m V(FM) Max.(V) Forward Voltage20 @I(FM) (A) (Test Condition)10m
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SEF120
Current10m
Voltage12k
Time150n
Voltage20
Current500n
Current20u
StyleAxial-10
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Untitled
Abstract: No abstract text available
Text: 2ASPD120 Diodes Silicon Center-Tapped Doubler I O Max.(A) Output Current1.5 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage120k I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage200 @I(FM) (A) (Test Condition) @Temp. (øC) (Test Condition)
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2ASPD120
Voltage120k
Voltage200
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