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    UV PHOTO DETECTOR Search Results

    UV PHOTO DETECTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RAA239101A2GNP#HA0 Renesas Electronics Corporation Photoelectric Smoke Detector AFE IC Visit Renesas Electronics Corporation
    EP610DI-30 Rochester Electronics LLC UV PLD, 32ns, CMOS, CDIP24, WINDOWED, CERDIP-24 Visit Rochester Electronics LLC Buy
    EP610DM-35 Rochester Electronics LLC UV PLD, 37ns, CMOS, CDIP24, 0.300 INCH, WINDOWED, CERDIP-24 Visit Rochester Electronics LLC Buy
    EP610DC-25 Rochester Electronics LLC UV PLD, 27ns, CMOS, CDIP24, WINDOWED, CERDIP-24 Visit Rochester Electronics LLC Buy
    EP1810GC-35 Rochester Electronics LLC UV PLD, 40ns, CMOS, CPGA68, WINDOWED, CERAMIC, PGA-68 Visit Rochester Electronics LLC Buy

    UV PHOTO DETECTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    uv detector

    Abstract: uv PHOTO detector 250nm photovoltaic photoconductive biomedical photoconductive diode UV diode datasheet uv meter NEP 250 photo diode uv
    Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP1045 PC/PV - UV MXP1046 PC/PV - UV MXP1047 PC/PV - UV UV Enhanced Photo Detectors Features • • • • Photovoltaic / Photoconductive Ultra High Shunt Resistance Ultra Low Noise


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    PDF MXP1045 MXP1046 MXP1047 250nm 250nm/1kHz V/250nm 50Ohm 0V/250nm 250nm/50Ohm uv detector uv PHOTO detector 250nm photovoltaic photoconductive biomedical photoconductive diode UV diode datasheet uv meter NEP 250 photo diode uv

    InGaAs quadrant

    Abstract: C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A
    Text: Photodiodes for High-Performance Applications PIN Photo- PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced diodes For Industrial Applications InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced Applications • Telecom


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    PDF C30845EH YAG-444-4AH DTC-140H InGaAs quadrant C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A

    410nm

    Abstract: No abstract text available
    Text: Tops 1 Power Violet LED OSV5XAT1C1E •Features Dimension Highest Luminous Flux Long Lifetime Operation ● Superior ESD protection ● Superior UV Resistance ■Applications Money Detector ● UV-Curing ● Sensor light ● Photo-catalyst ● Other Lighting


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    PDF 350mA 410nm

    led xeon

    Abstract: UV led 405 nm peak wavelength
    Text: Xeon 1 Power Violet LED OSV5XME1C1E •Features ■Outline Highest Luminous Flux ● Super Energy Efficiency ● Long Lifetime Operation ● Superior ESD protection ● Superior UV Resistance ■Applications ● Photo-catalyst ● Other Lighting 3.5 Sensor light


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    PDF 350mA led xeon UV led 405 nm peak wavelength

    Hamamatsu S6337

    Abstract: S1337-1010BQ S6337-01 SE-171 uv light PHOTO detector uv PHOTO detector
    Text: PHOTODIODE Si photodiode S6337-01 Large area photodiode for UV to IR, precision photometry S6337-01 is a large area Si photodiode that features excellent spatial response uniformity over a wide range from UV to IR. S6337-01 will prove useful for precision photometry and as a standard detector for spectral response calibration.


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    PDF S6337-01 S6337-01 SE-171 KSPD1029E01 Hamamatsu S6337 S1337-1010BQ uv light PHOTO detector uv PHOTO detector

    Untitled

    Abstract: No abstract text available
    Text: PHOTODIODE Si photodiode S6337-01 Large area photodiode for UV to IR, precision photometry S6337-01 is a large area Si photodiode that features excellent spatial response uniformity over a wide range from UV to IR. S6337-01 will prove useful for precision photometry and as a standard detector for spectral response calibration.


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    PDF S6337-01 S6337-01 SE-171 KSPD1029E01

    L11938

    Abstract: s11850
    Text: NEWS 02 2011 SOLID STATE PRODUCTS PAGE 06 High-sensitivity dual-element detectors ideal for gas analysis applications LASER PRODUCTS Mid-Infrared Quantum Cascade Lasers PAGE 18 ELECTRON TUBE PRODUCTS PAGE 23 Xenon Flash Light Source LF2 L11729, L11730 SYSTEMS PRODUCTS


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    PDF L11729, L11730 C10910 T11262-01, T11722-01 L12004-2190H-C, D-82211 DE128228814 L11938 s11850

    spot light size photodiode

    Abstract: S8382
    Text: IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


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    PDF S5930/S5931 S5930 S5931 SE-171 KMPD1018E04 spot light size photodiode S8382

    FND-100Q

    Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
    Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.


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    PDF CAT0506P FND-100Q FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E

    Untitled

    Abstract: No abstract text available
    Text: SMD - DETECTOR GaP - PHOTODIODE FP 10UV12 MADE IN GERMANY 6/99 ALL MEASUREMENTS IN mm Tol.: ±0,10 Features Wide Bandwidth and High Spectral Sensitivity in the UV Range 250 nm … 450 nm, Low Cost Chip Based on GaP, BigActivArea Possible pad 1,5x1 Application


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    PDF 10UV12 2500C

    Untitled

    Abstract: No abstract text available
    Text: SMD - DETECTOR GaP - PHOTODIODE FP 20UV48 MADE IN GERMANY 6/99 Features ALL MEASUREMENTS IN mm Tol.: ±0,10 Wide Bandwidth and High Spectral Sensitivity in the UV Range 250 nm … 450 nm, Low Cost Chip Based on GaP, BigActive Area Possible pad 1,5x1 Application


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    PDF 20UV48 2500C

    Untitled

    Abstract: No abstract text available
    Text: SMD - DETECTOR GaP - PHOTODIODE FP 20UV110 MADE IN GERMANY ALL MEASUREMENTS IN mm Tol.: ±0,10 6/99 Features Wide Bandwidth and High Spectral Sensitivity in the UV Range 250 nm … 450 nm, Low Cost Chip Based on GaP, Big Active Area Possible pad 1,5x1 Application


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    PDF 20UV110

    TWO COLOR DETECTOR

    Abstract: two color photodiode Photodiode, TO-5 K1713 K1713-05 K1713-08 K1713-09
    Text: UV TO IR DETECTOR Two-color detector K1713-05/-08/-09 Wide spectral response range from UV to IR K1713 series incorporates an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. Features Applications l Wide spectral response range


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    PDF K1713-05/-08/-09 K1713 K1713-05 K1713-08 K1713-09 SE-171 KIRD1040E02 TWO COLOR DETECTOR two color photodiode Photodiode, TO-5 K1713-05 K1713-08 K1713-09

    two color photodiode

    Abstract: flame detector DETECTOR FLAME InGaas PIN photodiode pin photodiode transistor 1BW TWO COLOR DETECTOR K3413-05 K3413-08 K3413-09
    Text: UV TO IR DETECTOR Two-color detector K3413-05/-08/-09 Wide spectral response range from UV to IR K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25 µm to nearly 1.7 µm. The built-in thermoelectric cooler


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    PDF K3413-05/-08/-09 K3413-05/-08/-09 SE-171 KIRD1041E02 two color photodiode flame detector DETECTOR FLAME InGaas PIN photodiode pin photodiode transistor 1BW TWO COLOR DETECTOR K3413-05 K3413-08 K3413-09

    Untitled

    Abstract: No abstract text available
    Text: UV TO IR DETECTOR Two-color detector K1713-05/-08/-09 Wide spectral response range from UV to IR K1713 series incorporates an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. Features Applications l Wide spectral response range


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    PDF K1713-05/-08/-09 K1713 K1713-05 K1713-08 SE-171 KIRD1040E03

    uv detector

    Abstract: uv sensors uv PHOTO detector 340nm
    Text: This product complies with the RoHS Directive EU 2002/95/EC . SMD Type GaN UV Detector KPDU34PS1 Features ・Wide sensitivity covering both UV-A and UV-B radiations ・Blindness to visible light: typical sensitivity ratio, R(600nm)/R(340nm)<1/5000 ・Low dark current with a photovoltaic mode


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    PDF 2002/95/EC) KPDU34PS1 600nm 340nm 0905/KPDU34PS1) uv detector uv sensors uv PHOTO detector

    K3413-05

    Abstract: K3413-08 K3413-09 pin photodiode InGaAs sensitivity InGaas PIN photodiode
    Text: UV TO IR DETECTOR Two-color detector K3413-05/-08/-09 Wide spectral response range from UV to IR K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25 µm to nearly 1.7 µm. The built-in thermoelectric cooler


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    PDF K3413-05/-08/-09 K3413-05/-08/-09 SE-171 KIRD1041E03 K3413-05 K3413-08 K3413-09 pin photodiode InGaAs sensitivity InGaas PIN photodiode

    Si photodiode, united detector

    Abstract: No abstract text available
    Text: UV TO IR DETECTOR Two-color detector K3413-05/-08/-09 Wide spectral response range from UV to IR K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25 µm to nearly 1.7 µm. The built-in thermoelectric cooler


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    PDF K3413-05/-08/-09 K3413-05/-08/-09 SE-171 KIRD1041E03 Si photodiode, united detector

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning


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    PDF S5930/S5931 B1201, KMPD1018E05

    S10111

    Abstract: No abstract text available
    Text: CMOS linear image sensors S10111 to S10114 series Current-output type sensors with variable integration time function The S10111 to S10114 series are self-scanning photodiode arrays designed speciÝcally as detectors for spectroscopy. The scanning circuit operates at low power consumption and is easy to handle. Each photodiode has a large photosensitive area


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    PDF S10111 S10114 SE-171 KMPD1090E08

    sensor BPW34 application note

    Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . G uide to Industr ial A pplic ations OPTOELECTRONICS OPTOELECTRONICS A PPL I CAT I O N S G U I D E w w w. v i s h a y. c o m OPTOELECTRONICS Guide to Industrial Applications Introduction As the world´s leading supplier of infrared emitters, photo detectors, and optical sensors,


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    PDF VMN-MS6520-1012 sensor BPW34 application note touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note

    S10114-1024Q

    Abstract: No abstract text available
    Text: CMOS linear image sensors S10111 to S10114 series Current-output type sensors with variable integration time function The S10111 to S10114 series are self-scanning photodiode arrays designed speci¿cally as detectors for spectroscopy. The scanning circuit operates at low power consumption and is easy to handle. Each photodiode has a large photosensitive area


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    PDF S10111 S10114 SE-171 KMPD1090E08 S10114-1024Q

    Untitled

    Abstract: No abstract text available
    Text: • ■ ■ i Santa AnaL Ana, C CA A_ Micmsemi m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 Progresa P ow ered b y Technology MXP1045 PC/PV - UV MXP1046 PC/PV - UV MXP1047 PC/PV - UV UV Enhanced Photo Detectors Features •


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    PDF MXP1045 MXP1046 MXP1047 250nm 250nm/1 V/250nm 500hIC 0V/250nm 250nm/500hm

    Photodiodes

    Abstract: GaAsP Laser Diode PHOTO SENSORS insb diode led uv
    Text: Types and Applications of Hamamatsu Opto-semiconductors Products ' Hiqh fcneigy Particles Si Photodiodes — UV 1— Visible I Hiqti Ene'sy P h /s « i lAJtinai MediCirt liviustrial w ^ u n n g tn rw ra ritc UV Enhanced Si Photodiodes Pollution Anaiv/t's,. ‘¿ pat iroptwlorr,ôtera


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