uv detector
Abstract: uv PHOTO detector 250nm photovoltaic photoconductive biomedical photoconductive diode UV diode datasheet uv meter NEP 250 photo diode uv
Text: 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 MXP1045 PC/PV - UV MXP1046 PC/PV - UV MXP1047 PC/PV - UV UV Enhanced Photo Detectors Features • • • • Photovoltaic / Photoconductive Ultra High Shunt Resistance Ultra Low Noise
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MXP1045
MXP1046
MXP1047
250nm
250nm/1kHz
V/250nm
50Ohm
0V/250nm
250nm/50Ohm
uv detector
uv PHOTO detector
250nm
photovoltaic photoconductive
biomedical
photoconductive diode
UV diode datasheet
uv meter
NEP 250
photo diode uv
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InGaAs quadrant
Abstract: C30822E UV245BG UV-215BQ C30971 C30641EH-TC FFD-100 YAG-100A
Text: Photodiodes for High-Performance Applications PIN Photo- PIN Photodiodes InGaAs and Si PIN Diodes, Quadrant Detectors, UV-Enhanced diodes For Industrial Applications InGaAs and Si PIN Diodes – Quadrant Detectors – UV-Enhanced Applications • Telecom
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C30845EH
YAG-444-4AH
DTC-140H
InGaAs quadrant
C30822E
UV245BG
UV-215BQ
C30971
C30641EH-TC
FFD-100
YAG-100A
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410nm
Abstract: No abstract text available
Text: Tops 1 Power Violet LED OSV5XAT1C1E •Features Dimension Highest Luminous Flux Long Lifetime Operation ● Superior ESD protection ● Superior UV Resistance ■Applications Money Detector ● UV-Curing ● Sensor light ● Photo-catalyst ● Other Lighting
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350mA
410nm
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led xeon
Abstract: UV led 405 nm peak wavelength
Text: Xeon 1 Power Violet LED OSV5XME1C1E •Features ■Outline Highest Luminous Flux ● Super Energy Efficiency ● Long Lifetime Operation ● Superior ESD protection ● Superior UV Resistance ■Applications ● Photo-catalyst ● Other Lighting 3.5 Sensor light
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350mA
led xeon
UV led 405 nm peak wavelength
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Hamamatsu S6337
Abstract: S1337-1010BQ S6337-01 SE-171 uv light PHOTO detector uv PHOTO detector
Text: PHOTODIODE Si photodiode S6337-01 Large area photodiode for UV to IR, precision photometry S6337-01 is a large area Si photodiode that features excellent spatial response uniformity over a wide range from UV to IR. S6337-01 will prove useful for precision photometry and as a standard detector for spectral response calibration.
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S6337-01
S6337-01
SE-171
KSPD1029E01
Hamamatsu S6337
S1337-1010BQ
uv light PHOTO detector
uv PHOTO detector
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S6337-01 Large area photodiode for UV to IR, precision photometry S6337-01 is a large area Si photodiode that features excellent spatial response uniformity over a wide range from UV to IR. S6337-01 will prove useful for precision photometry and as a standard detector for spectral response calibration.
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S6337-01
S6337-01
SE-171
KSPD1029E01
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L11938
Abstract: s11850
Text: NEWS 02 2011 SOLID STATE PRODUCTS PAGE 06 High-sensitivity dual-element detectors ideal for gas analysis applications LASER PRODUCTS Mid-Infrared Quantum Cascade Lasers PAGE 18 ELECTRON TUBE PRODUCTS PAGE 23 Xenon Flash Light Source LF2 L11729, L11730 SYSTEMS PRODUCTS
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L11729,
L11730
C10910
T11262-01,
T11722-01
L12004-2190H-C,
D-82211
DE128228814
L11938
s11850
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spot light size photodiode
Abstract: S8382
Text: IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S5930/S5931
S5930
S5931
SE-171
KMPD1018E04
spot light size photodiode
S8382
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FND-100Q
Abstract: FND-100 C30724E YAG-444-4A InGaAs APD quadrant PerkinElmer fnd-100q Si apd photodiode nir emitter leds with 700 to 900 nm SPCM-AQR C30950E
Text: High-performance emitters & detectors for the most demanding applications PerkinElmer Optoelectronics PerkinElmer Optoelectronics provides Sensor, Lighting and Digital Imaging technologies to speed the development of breakthrough applications for customers in industrial, safety & security, consumer and biomedical markets.
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CAT0506P
FND-100Q
FND-100
C30724E
YAG-444-4A
InGaAs APD quadrant
PerkinElmer fnd-100q
Si apd photodiode
nir emitter leds with 700 to 900 nm
SPCM-AQR
C30950E
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Untitled
Abstract: No abstract text available
Text: SMD - DETECTOR GaP - PHOTODIODE FP 10UV12 MADE IN GERMANY 6/99 ALL MEASUREMENTS IN mm Tol.: ±0,10 Features Wide Bandwidth and High Spectral Sensitivity in the UV Range 250 nm … 450 nm, Low Cost Chip Based on GaP, BigActivArea Possible pad 1,5x1 Application
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10UV12
2500C
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Untitled
Abstract: No abstract text available
Text: SMD - DETECTOR GaP - PHOTODIODE FP 20UV48 MADE IN GERMANY 6/99 Features ALL MEASUREMENTS IN mm Tol.: ±0,10 Wide Bandwidth and High Spectral Sensitivity in the UV Range 250 nm … 450 nm, Low Cost Chip Based on GaP, BigActive Area Possible pad 1,5x1 Application
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20UV48
2500C
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Untitled
Abstract: No abstract text available
Text: SMD - DETECTOR GaP - PHOTODIODE FP 20UV110 MADE IN GERMANY ALL MEASUREMENTS IN mm Tol.: ±0,10 6/99 Features Wide Bandwidth and High Spectral Sensitivity in the UV Range 250 nm
450 nm, Low Cost Chip Based on GaP, Big Active Area Possible pad 1,5x1 Application
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20UV110
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TWO COLOR DETECTOR
Abstract: two color photodiode Photodiode, TO-5 K1713 K1713-05 K1713-08 K1713-09
Text: UV TO IR DETECTOR Two-color detector K1713-05/-08/-09 Wide spectral response range from UV to IR K1713 series incorporates an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. Features Applications l Wide spectral response range
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K1713-05/-08/-09
K1713
K1713-05
K1713-08
K1713-09
SE-171
KIRD1040E02
TWO COLOR DETECTOR
two color photodiode
Photodiode, TO-5
K1713-05
K1713-08
K1713-09
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two color photodiode
Abstract: flame detector DETECTOR FLAME InGaas PIN photodiode pin photodiode transistor 1BW TWO COLOR DETECTOR K3413-05 K3413-08 K3413-09
Text: UV TO IR DETECTOR Two-color detector K3413-05/-08/-09 Wide spectral response range from UV to IR K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25 µm to nearly 1.7 µm. The built-in thermoelectric cooler
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K3413-05/-08/-09
K3413-05/-08/-09
SE-171
KIRD1041E02
two color photodiode
flame detector
DETECTOR FLAME
InGaas PIN photodiode
pin photodiode
transistor 1BW
TWO COLOR DETECTOR
K3413-05
K3413-08
K3413-09
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Untitled
Abstract: No abstract text available
Text: UV TO IR DETECTOR Two-color detector K1713-05/-08/-09 Wide spectral response range from UV to IR K1713 series incorporates an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. Features Applications l Wide spectral response range
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K1713-05/-08/-09
K1713
K1713-05
K1713-08
SE-171
KIRD1040E03
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uv detector
Abstract: uv sensors uv PHOTO detector 340nm
Text: This product complies with the RoHS Directive EU 2002/95/EC . SMD Type GaN UV Detector KPDU34PS1 Features ・Wide sensitivity covering both UV-A and UV-B radiations ・Blindness to visible light: typical sensitivity ratio, R(600nm)/R(340nm)<1/5000 ・Low dark current with a photovoltaic mode
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2002/95/EC)
KPDU34PS1
600nm
340nm
0905/KPDU34PS1)
uv detector
uv sensors
uv PHOTO detector
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K3413-05
Abstract: K3413-08 K3413-09 pin photodiode InGaAs sensitivity InGaas PIN photodiode
Text: UV TO IR DETECTOR Two-color detector K3413-05/-08/-09 Wide spectral response range from UV to IR K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25 µm to nearly 1.7 µm. The built-in thermoelectric cooler
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K3413-05/-08/-09
K3413-05/-08/-09
SE-171
KIRD1041E03
K3413-05
K3413-08
K3413-09
pin photodiode InGaAs sensitivity
InGaas PIN photodiode
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Si photodiode, united detector
Abstract: No abstract text available
Text: UV TO IR DETECTOR Two-color detector K3413-05/-08/-09 Wide spectral response range from UV to IR K3413-05/-08/-09 are hybrid detectors containing an infrared-transmitting Si photodiode mounted over an InGaAs PIN photodiode, along the same optical axis. This structure delivers a wide spectral response range from 0.25 µm to nearly 1.7 µm. The built-in thermoelectric cooler
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K3413-05/-08/-09
K3413-05/-08/-09
SE-171
KIRD1041E03
Si photodiode, united detector
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR NMOS linear image sensor S5930/S5931 series Built-in thermoelectric cooler ensures long exposure time and stable operation. NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning
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S5930/S5931
B1201,
KMPD1018E05
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S10111
Abstract: No abstract text available
Text: CMOS linear image sensors S10111 to S10114 series Current-output type sensors with variable integration time function The S10111 to S10114 series are self-scanning photodiode arrays designed speciÝcally as detectors for spectroscopy. The scanning circuit operates at low power consumption and is easy to handle. Each photodiode has a large photosensitive area
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S10111
S10114
SE-171
KMPD1090E08
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sensor BPW34 application note
Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . G uide to Industr ial A pplic ations OPTOELECTRONICS OPTOELECTRONICS A PPL I CAT I O N S G U I D E w w w. v i s h a y. c o m OPTOELECTRONICS Guide to Industrial Applications Introduction As the world´s leading supplier of infrared emitters, photo detectors, and optical sensors,
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VMN-MS6520-1012
sensor BPW34 application note
touch sensitive siren using transistor
tsop sensor
Infrared sensor TSOP 1738
vo2223
vo3120
infrared signal transmission distance sensor
BPW34 application note
APPLICATION NOTE BpW34
BP104 application note
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S10114-1024Q
Abstract: No abstract text available
Text: CMOS linear image sensors S10111 to S10114 series Current-output type sensors with variable integration time function The S10111 to S10114 series are self-scanning photodiode arrays designed speci¿cally as detectors for spectroscopy. The scanning circuit operates at low power consumption and is easy to handle. Each photodiode has a large photosensitive area
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S10111
S10114
SE-171
KMPD1090E08
S10114-1024Q
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Untitled
Abstract: No abstract text available
Text: • ■ ■ i Santa AnaL Ana, C CA A_ Micmsemi m 2830 S. Fairview St. Santa Ana, CA 92704 PH: 714.979.8220 FAX: 714.557.5989 Progresa P ow ered b y Technology MXP1045 PC/PV - UV MXP1046 PC/PV - UV MXP1047 PC/PV - UV UV Enhanced Photo Detectors Features •
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MXP1045
MXP1046
MXP1047
250nm
250nm/1
V/250nm
500hIC
0V/250nm
250nm/500hm
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Photodiodes
Abstract: GaAsP Laser Diode PHOTO SENSORS insb diode led uv
Text: Types and Applications of Hamamatsu Opto-semiconductors Products ' Hiqh fcneigy Particles Si Photodiodes — UV 1— Visible I Hiqti Ene'sy P h /s « i lAJtinai MediCirt liviustrial w ^ u n n g tn rw ra ritc UV Enhanced Si Photodiodes Pollution Anaiv/t's,. ‘¿ pat iroptwlorr,ôtera
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