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    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain


    Original     		PDF UT40N03T UT40N03TL-TA3-T UT40N03TG-TA3-T UT40N03TL-TM3-T UT40N03TG-TM3-T UT40N03TL-TN3-R UT40N03TG-TN3-R UT40N03TL-TN3-T UT40N03TG-TN3-T UT40N03TL-TQ2-R

    A1693

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ FEATURES * RDS ON = 17mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain *Pb-free plating product number: UT40N03L


    Original     		PDF UT40N03 UT40N03L UT40N03-TN3-R UT40N03L-TN3-R UT40N03-TN3-T UT40N03L-TN3-T O-252 QW-R502-160 A1693

    UT40N03G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ FEATURES * RDS ON = 17mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain Lead-free: UT40N03L


    Original     		PDF UT40N03 UT40N03L UT40N03G UT40N03-TN3-R UT40N03L-TN3-R UT40N03G-TN3-R O-252 QW-R502-160 UT40N03G

    UT40N03L

    Abstract: UT40N03G UT40N03T
    Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET N-CHANNEL ENHANCEMENT MODE „ FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain Lead-free: UT40N03L


    Original     		PDF UT40N03T UT40N03L UT40N03G UT40N03T-TN3-R UT40N03T-TN3-T UT40N03T-TQ2-R UT40N03T-TQ2-T UT40N03TL-TN3-R UT40N03TL-TN3-T UT40N03TL-TQ2-R UT40N03L UT40N03G UT40N03T

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD UT40N03T Power MOSFET 3 0 V , 2 8 A N -CH AN N EL EN H AN CEM EN T M ODE POWER M OSFET ̈ FEAT U RES * RDS ON = 25m @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified


    Original     		PDF UT40N03T UT40N03TL-TA3-T UT40N03TG-TA3-T UT40N03TL-TM3-T UT40N03TG-TM3-T UT40N03TL-TN3-R UT40N03TG-TN3-R UT40N03TL-TN3-T UT40N03TG-TN3-T UT40N03TL-TQ2-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET „ FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain


    Original     		PDF UT40N03T UT40N03TL-TA3-T UT40N03TG-TA3-T UT40N03TL-TM3-R UT40N03TG-TM3-R UT40N03TL-TN3-R UT40N03TG-TN3-R UT40N03TL-TN3-T UT40N03TG-TN3-T UT40N03TL-TQ2-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET N-CHANNEL ENHANCEMENT MODE „ FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ 1 TO-263 SYMBOL 2.Drain *Pb-free plating product number: UT40N03TL


    Original     		PDF UT40N03T O-263 UT40N03TL UT40N03T-TQ2-R UT40N03TL-TQ2-R UT40N03T-TQ2-T UT40N03TL-TQ2-T QW-R502-172

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET N-CHANNEL ENHANCEMENT MODE „ FEATURES * RDS ON = 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ SYMBOL 2.Drain 1.Gate 3.Source


    Original     		PDF UT40N03T UT40N03TL-TA3-T UT40N03TG-TA3-T UT40N03TL-TN3-R UT40N03TG-TN3-R UT40N03TL-TN3-T UT40N03TG-TN3-T UT40N03TL-TQ2-R UT40N03TG-TQ2-R UT40N03TL-TQ2-T

    ut40n03

    Abstract: UT-40 a1693
    Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03 Power MOSFET 40 Amps, 30 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The UT40N03 power MOSFET provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness


    Original     		PDF UT40N03 UT40N03 UT40N03L-TN3-R UT40N03G-TN3-R UT40N03L-TM3-T UT40N03G-TM3-T O-252 O-251 QW-R502-160 UT-40 a1693

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT40N03T Power MOSFET 30V, 28A N-CHANNEL ENHANCEMENT MODE POWER MOSFET  FEATURES * RDS ON < 25mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  SYMBOL


    Original     		PDF UT40N03T UT40N03TL-TA3-T UT40N03TG-TA3-T O-220 UT40N03TL-TM3-T UT40N03TG-TM3-T O-251 UT40N03TL-TN3-R UT40N03TG-TN3-R O-252