UPF2010F Search Results

UPF2010F Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UPF2010F		Cree	10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS		Original	PDF
UPF2010F		Cree	FET Transistor, 10W, 2.0GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF

UPF2010F Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
UPF2010F Abstract: ultrarf UPF2010 UPF2010P Text: UPF2010 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers	Original	PDF	UPF2010 30dBc UPF2010F UPF2010P UPF2010F ultrarf UPF2010 UPF2010P
UPF2010-178 Abstract: Cree Microwave upf2010 AC DC 10w 100UF 47PF UPF2010 UPF2010F UPF2010P J033 package type 440109 Text: UPF2010 10W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rater with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.	Original	PDF	UPF2010 30dBc UPF2010F UPF2010P UPF20AP 100UF 125MW, UPF2010 UPF2010F UPF2010-178 Cree Microwave upf2010 AC DC 10w 47PF UPF2010P J033 package type 440109

Catalog Datasheet

MFG & Type

PDF

Document Tags

UPF2010F

Abstract: ultrarf UPF2010 UPF2010P
Text: UPF2010 10W, 2GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS This device is designed for base station applications up to frequencies of 2GHz. Rated with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power Amplifiers

Original

PDF

UPF2010 30dBc UPF2010F UPF2010P UPF2010F ultrarf UPF2010 UPF2010P

UPF2010-178

Abstract: Cree Microwave upf2010 AC DC 10w 100UF 47PF UPF2010 UPF2010F UPF2010P J033 package type 440109
Text: UPF2010 10W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET This device is designed for base station applications up to frequencies of 2.0 GHz. Rater with a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or MultiCarrier Power Amplifiers in Class A or AB operation.