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Rochester Electronics LLC UPD44644362AF5-E40-FQ1 72-MBIT DDR II SRAM
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DigiKey	UPD44644362AF5-E40-FQ1	Bulk			4	1 - 10 $77.53 100 $77.53 1000 $77.53 10000 $77.53	Buy Now
Rochester Electronics LLC UPD44645364AF5-E40-FQ1 STANDARD SRAM, 2MX36, 0.45NS
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DigiKey	UPD44645364AF5-E40-FQ1	Bulk			4	1 - 10 $77.53 100 $77.53 1000 $77.53 10000 $77.53	Buy Now
Rochester Electronics LLC UPD44646363AF5-E22-FQ1 IC SRAM 72MBIT PARALLEL 165PBGA
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DigiKey	UPD44646363AF5-E22-FQ1	Bulk			4	1 - 10 $77.53 100 $77.53 1000 $77.53 10000 $77.53	Buy Now
Rochester Electronics LLC UPD44647366AF5-E25-FQ1 IC SRAM 72MBIT PARALLEL 165PBGA
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DigiKey	UPD44647366AF5-E25-FQ1	Bulk			4	1 - 10 $77.53 100 $77.53 1000 $77.53 10000 $77.53	Buy Now
Rochester Electronics LLC UPD44645362AF5-E40-FQ1 STANDARD SRAM, 2MX36, 0.45NS
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DigiKey	UPD44645362AF5-E40-FQ1	Bulk			4	1 - 10 $77.53 100 $77.53 1000 $77.53 10000 $77.53	Buy Now

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UPD4464 Datasheets (36)

Part	Manufacturer	Description	Datasheet Type	PDF
UPD4464	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
UPD4464	NEC	8192 x 8 Bit Static CMOS RAM	Scan	PDF
UPD44646183AF5-E22-FQ1	Renesas Electronics	Memory, Integrated Circuits (ICs), IC SRAM DDRII 72MBIT 165BGA	Original	PDF
UPD44646183AF5-E22-FQ1-A	Renesas Electronics	Memory, Integrated Circuits (ICs), IC SRAM DDRII 72MBIT 165BGA	Original	PDF
UPD44646183AF5-E25-FQ1	Renesas Electronics	Memory, Integrated Circuits (ICs), IC SRAM DDRII 72MBIT 165BGA	Original	PDF
UPD44646183AF5-E25-FQ1-A	Renesas Electronics	Memory, Integrated Circuits (ICs), IC SRAM DDRII 72MBIT 165BGA	Original	PDF
UPD44646363AF5-E22-FQ1	Renesas Electronics	Memory, Integrated Circuits (ICs), IC SRAM DDRII 72MBIT 165BGA	Original	PDF
UPD44646363AF5-E22-FQ1-A	Renesas Electronics	Memory, Integrated Circuits (ICs), IC SRAM DDRII 72MBIT 165BGA	Original	PDF
UPD44646363AF5-E25-FQ1	Renesas Electronics	Memory, Integrated Circuits (ICs), IC SRAM DDRII 72MBIT 165BGA	Original	PDF
UPD44646363AF5-E25-FQ1-A	Renesas Electronics	Memory, Integrated Circuits (ICs), IC SRAM DDRII 72MBIT 165BGA	Original	PDF
UPD44647186AF5-E22-FQ1	Renesas Electronics	Memory, Integrated Circuits (ICs), IC SRAM DDRII 72MBIT 165BGA	Original	PDF
UPD44647186AF5-E22-FQ1-A	Renesas Electronics	Memory, Integrated Circuits (ICs), IC SRAM QDRII 72MBIT 165BGA	Original	PDF
UPD44647186AF5-E25-FQ1	Renesas Electronics	Memory, Integrated Circuits (ICs), IC SRAM QDRII 72MBIT 165BGA	Original	PDF
UPD44647186AF5-E25-FQ1-A	Renesas Electronics	Memory, Integrated Circuits (ICs), IC SRAM QDRII 72MBIT 165BGA	Original	PDF

UPD44647366AF5-E22-FQ1	Renesas Electronics	Memory, Integrated Circuits (ICs), IC SRAM QDRII 72MBIT 165BGA	Original	PDF
UPD44647366AF5-E22-FQ1-A	Renesas Electronics	Memory, Integrated Circuits (ICs), IC SRAM QDRII 72MBIT 165BGA	Original	PDF
UPD44647366AF5-E25-FQ1	Renesas Electronics	Memory, Integrated Circuits (ICs), IC SRAM QDRII 72MBIT 165BGA	Original	PDF
UPD44647366AF5-E25-FQ1-A	Renesas Electronics	Memory, Integrated Circuits (ICs), IC SRAM QDRII 72MBIT 165BGA	Original	PDF
UPD4464C-12	NEC	8,192 x 8 - BIT STATIC CMOS RAM	Scan	PDF
UPD4464C-12L	NEC	8,192 x 8 - BIT STATIC CMOS RAM	Scan	PDF

UPD4464 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TC5118160 Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260 Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256	Original	PDF	256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	PDF	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44644082, 44644092, 44644182, 44644362 72M-BIT DDRII SRAM 2-WORD BURST OPERATION Description The μPD44644082 is a 8,388,608-word by 8-bit, the μPD44644092 is a 8,388,608-word by 9-bit, the μPD44644182 is a	Original	PDF	PD44644082, 72M-BIT PD44644082 608-word PD44644092 PD44644182 304-word 18-bit PD44644362
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44644085, 44644095, 44644185, 44644365 72M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44644085 is a 8,388,608-word by 8-bit, the μPD44644095 is a 8,388,608-word by 9-bit, the μPD44644185 is a	Original	PDF	PD44644085, 72M-BIT PD44644085 608-word PD44644095 PD44644185 304-word 18-bit PD44644365
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44645084, 44645094, 44645184, 44645364 72M-BIT QDRTM II SRAM 4-WORD BURST OPERATION Description The μPD44645084 is a 8,388,608-word by 8-bit, the μPD44645094 is a 8,388,608-word by 9-bit, the μPD44645184 is a	Original	PDF	PD44645084, 72M-BIT PD44645084 608-word PD44645094 PD44645184 304-word 18-bit PD44645364
PD44647366AF5-E22-FQ1-A Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF	M8E0904E PD44647366AF5-E22-FQ1-A
Untitled Abstract: No abstract text available Text: インフォメーション QDRTM II+ / DDR II+ SRAM の特徴（QDR II / DDR II との比較）資料番号 M19831JJ1V0IF00（第 1 版）発行年月 May 2009 NEC Electronics Corporation 2009 〔メモ〕 2 インフォメーション M19831JJ1V0IF00	Original	PDF	M19831JJ1V0IF00 M19831JJ1V0IF00
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original	PDF
570FAB000433DG Abstract: 88E1111 si570 88E1111-B2 HDMI to SDI converter chip 88E1111-B2-CAAIC000 schematic diagram lcd monitor samsung 19-PIN HDMI CONNECTOR LT3025 LCM-S01602DSR/C Text: Stratix IV GX FPGA Development Board Reference Manual 101 Innovation Drive San Jose, CA 95134 www.altera.com Document Version: Document Date: 2.0 November 2009 Copyright 2009 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other	Original	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44644085, 44644095, 44644185, 44644365 72M-BIT DDRII SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44644085 is a 8,388,608-word by 8-bit, the μPD44644095 is a 8,388,608-word by 9-bit, the μPD44644185 is a	Original	PDF	PD44644085, 72M-BIT PD44644085 608-word PD44644095 PD44644185 304-word 18-bit PD44644365
zo 107 MA Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44645082, 44645092, 44645182, 44645362 72M-BIT QDRTM II SRAM 2-WORD BURST OPERATION Description The μPD44645082 is a 8,388,608-word by 8-bit, the μPD44645092 is a 8,388,608-word by 9-bit, the μPD44645182 is a	Original	PDF	PD44645082, 72M-BIT PD44645082 608-word PD44645092 PD44645182 304-word 18-bit PD44645362 zo 107 MA
M1852 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44646095, 44646185, 44646365, 44646097, 44646187, 44646367 72M-BIT DDR II+ SRAM SEPARATE I/O 2.0 & 2.5 Cycle Read Latency 2-WORD BURST OPERATION Description The μPD44646095 and μPD44646097 are 8,388,608-word by 9-bit, the μPD44646185 and μPD44646187 are	Original	PDF	PD44646095, 72M-BIT PD44646095 PD44646097 608-word PD44646185 PD44646187 304-word 18-bit PD44646365 M1852
19-PIN HDMI CONNECTOR Abstract: 570FAB000433DG PC28F512P30BF schematic diagram of laptop motherboard 88E1111 Marvell PHY 88E1111 Datasheet marvel phy 88e1111 reference design Marvell PHY 88E1111 layout samsung lcd monitor power board schematic 88E1111 PHY registers map Text: Stratix IV GX FPGA Development Board Reference Manual Stratix IV GX FPGA Development Board Reference Manual 101 Innovation Drive San Jose, CA 95134 www.altera.com MNL-01043-2.2 Subscribe 2010 Altera Corporation. All rights reserved. ALTERA, ARRIA, CYCLONE, HARDCOPY, MAX, MEGACORE, NIOS, QUARTUS and STRATIX are Reg. U.S. Pat.	Original	PDF	MNL-01043-2 19-PIN HDMI CONNECTOR 570FAB000433DG PC28F512P30BF schematic diagram of laptop motherboard 88E1111 Marvell PHY 88E1111 Datasheet marvel phy 88e1111 reference design Marvell PHY 88E1111 layout samsung lcd monitor power board schematic 88E1111 PHY registers map
BGA15 Abstract: 72M-BIT samsung ddr quad data rate SRAM idt 150-NM Text: 2009.9 2009.9 Ᏹߦᦨవ┵ࡔࡕ࡝⵾ຠࠍ㐿⊒ߒߡ߈ߚᛛⴚജࠍᵴ߆ߒ ᤨઍߩ࠾࡯࠭ߦวߞߚᣂߒ޿ࡔࡕ࡝໡ຠࠍ㐿⊒ߒߡ߹޿ࠅ߹ߔ‫ޕ‬ NECࠛ࡟ࠢ࠻ࡠ࠾ࠢࠬߪ㧘ࡔࡕ࡝੐ᬺಽ㊁ߦ߅޿ߡᏱߦᦨవ┵ߩᛛⴚࠍᛩ౉ߒ㧘	Original	PDF	M16000JJHV0SG 150nm 144pin PD48288118 M16000JJHV0SG00 BGA15 72M-BIT samsung ddr quad data rate SRAM idt 150-NM

jtag timing Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF	M8E0904E jtag timing
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44644084, 44644094, 44644184, 44644364 72M-BIT DDRII SRAM 4-WORD BURST OPERATION Description The μPD44644084 is a 8,388,608-word by 8-bit, the μPD44644094 is a 8,388,608-word by 9-bit, the μPD44644184 is a	Original	PDF	PD44644084, 72M-BIT PD44644084 608-word PD44644094 PD44644184 304-word 18-bit PD44644364
pd446 Abstract: PD4464 Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44644095A-A, 44644185A-A 72M-BIT DDR II SRAM SEPARATE I/O 2-WORD BURST OPERATION Description The μPD44644095A-A is a 8,388,608-word by 9-bit and the μPD44644185A-A is a 4,194,304-word by 18-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor	Original	PDF	PD44644095A-A, 4644185A-A 72M-BIT PD44644095A-A 608-word PD44644185A-A 304-word 18-bit pd446 PD4464
2N101 Abstract: 2J51A CQX18 Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44646092A-A, 44646182A-A, 44646362A-A, 44646093A-A, 44646183A-A, 44646363A-A 72M-BIT DDR II+ SRAM 2.0 & 2.5 CLOCK CYCLES READ LATENCY 2-WORD BURST OPERATION Description The μPD44646092A-A and μPD44646093A-A are 8,388,608-word by 9-bit, the μPD44646182A-A and μPD44646183A-A	Original	PDF	PD44646092A-A, 4646182A-A, 4646362A-A, 4646093A-A, 4646183A-A, 4646363A-A 72M-BIT PD44646092A-A PD44646093A-A 608-word 2N101 2J51A CQX18
Boundary Scan JTAG Logic Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44644184A-A, 44644364A-A 72M-BIT DDR II SRAM 4-WORD BURST OPERATION Description The μPD44644184A-A is a 4,194,304-word by 18-bit and the μPD44644364A-A is a 2,097,152-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor	Original	PDF	PD44644184A-A, 4644364A-A 72M-BIT PD44644184A-A 304-word 18-bit PD44644364A-A 152-word 36-bit Boundary Scan JTAG Logic
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44645092A-A, 44645182A-A, 44645362A-A 72M-BIT QDRTM II SRAM 2-WORD BURST OPERATION Description The μPD44645092A-A is a 8,388,608-word by 9-bit, the μPD44645182A-A is a 4,194,304-word by 18-bit and the μPD44645362A-A is a 2,097,152-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS	Original	PDF	PD44645092A-A, 4645182A-A, 4645362A-A 72M-BIT PD44645092A-A 608-word PD44645182A-A 304-word 18-bit PD44645362A-A
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD44644084, 44644094, 44644184, 44644364 72M-BIT DDR II SRAM 4-WORD BURST OPERATION Description The μPD44644084 is a 8,388,608-word by 8-bit, the μPD44644094 is a 8,388,608-word by 9-bit, the μPD44644184 is a	Original	PDF	PD44644084, 72M-BIT PD44644084 608-word PD44644094 PD44644184 304-word 18-bit PD44644364
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF	M8E0904E
STATIC RAM 6264 Abstract: 6264 RAM CI 6264 RAM 6264 6264 static RAM NEC 200 6264 6264 28pin UPD4464G-12L UPD4464G-15 Text: 94 6 4 K X m & ít CC> UPD4368CRAA-20 NEC uP04464G-12 NEC UPD4464G-12L TAAC « NEC 0— 70 TCAC max ns nax (ns) 20 20 120 120 TOE max (ns) CMOS 4 -, + TOH min (ns) y TOD nax (ns) y TWP min (ns) S t a t i c It TDS min (ns) TDH min (ns) TWD min (ns) TWR sa>:	OCR Scan	PDF	28PIN uP04368CR/LA-20 UP04464G-12 UPD4464G-12L UPD4464G-15 uPD4464G-15L STATIC RAM 6264 6264 RAM CI 6264 RAM 6264 6264 static RAM NEC 200 6264 6264 28pin UPD4464G-12L
organizational structure samsung Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256 Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116	OCR Scan	PDF	LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256

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UPD4464 Search Results

UPD4464 Price and Stock

Rochester Electronics LLC UPD44644362AF5-E40-FQ1

Rochester Electronics LLC UPD44645364AF5-E40-FQ1

Rochester Electronics LLC UPD44646363AF5-E22-FQ1

Rochester Electronics LLC UPD44647366AF5-E25-FQ1

Rochester Electronics LLC UPD44645362AF5-E40-FQ1

UPD4464 Datasheets (36)

UPD4464 Datasheets Context Search

TC5118160

sn76131

Untitled

Untitled

Untitled

PD44647366AF5-E22-FQ1-A

Untitled

2SK2500

570FAB000433DG

Untitled

zo 107 MA

M1852

19-PIN HDMI CONNECTOR

BGA15

jtag timing

Untitled

pd446

2N101

Boundary Scan JTAG Logic

Untitled

Untitled

Untitled

STATIC RAM 6264

organizational structure samsung