Untitled
Abstract: No abstract text available
Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK UltrafastTM Speed IGBT FEATURES 3 • Generation 4 IGBT technology 6 7 1 4 5 • Ultrafast: optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode
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GA75TS120UPbF
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching operating frequencies 8 to 60 kHz COMPLIANT • Low VCE(on)
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GB200TS60NPbF
12-Mar-07
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w438
Abstract: No abstract text available
Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching speed 8 to 60 kHz COMPLIANT • Low VCE(on) • 10 µs short circuit capability
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GB200TS60NPbF
18-Jul-08
w438
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Untitled
Abstract: No abstract text available
Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS
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GA75TS120UPbF
12-Mar-07
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GA100NA60UP
Abstract: ultrafast igbt information OF ic 7400
Text: GA100NA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 50 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA100NA60UP
OT-227
18-Jul-08
GA100NA60UP
ultrafast igbt
information OF ic 7400
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Untitled
Abstract: No abstract text available
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT • Very low conduction and switching losses
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GA200TS60UPbF
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode
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GA200TS60UPbF
12-Mar-07
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cpv364m4upbf
Abstract: No abstract text available
Text: CPV364M4UPbF Vishay High Power Products IGBT SIP Module Ultrafast IGBT FEATURES • Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail” losses • HEXFRED soft ultrafast diodes RoHS COMPLIANT • Optimized for high speed over 5 kHz
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CPV364M4UPbF
18-Jul-08
cpv364m4upbf
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E78996 datasheet bridge
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA100TS120UPbF
E78996
2002/95/EC
18-Jul-08
E78996 datasheet bridge
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GA100TS120UPBF
Abstract: No abstract text available
Text: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode
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GA100TS120UPbF
12-Mar-07
GA100TS120UPBF
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Untitled
Abstract: No abstract text available
Text: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized speed 8 to 60 kHz for hard RoHS switching COMPLIANT • Low VCE(on) • 10 µs short circuit capability
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GB100TS60NPbF
18-Jul-08
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GB100TS60NPbF
Abstract: GB100TS
Text: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability
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GB100TS60NPbF
E78996
2002/95/EC
18-Jul-08
GB100TS60NPbF
GB100TS
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Untitled
Abstract: No abstract text available
Text: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching operating frequencies 8 to 60 kHz COMPLIANT • Low VCE(on)
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GB100TS60NPbF
12-Mar-07
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1853G
Abstract: No abstract text available
Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching speed 8 to 60 kHz COMPLIANT • Low VCE(on) • 10 µs short circuit capability
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GB200TS60NPbF
18-Jul-08
1853G
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Untitled
Abstract: No abstract text available
Text: GB100TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 108 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching speed 8 to 60 kHz COMPLIANT • Low VCE(on) • 10 µs short circuit capability
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GB100TS60NPbF
18-Jul-08
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GB200TS60N
Abstract: GB200TS60NPBF DC-209 E78996 datasheet bridge
Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability
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GB200TS60NPbF
E78996
2002/95/EC
18-Jul-08
GB200TS60N
GB200TS60NPBF
DC-209
E78996 datasheet bridge
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Untitled
Abstract: No abstract text available
Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT • Very low conduction and switching losses
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GA75TS120UPbF
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: GB150TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 138 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching speed 8 to 60 kHz COMPLIANT • Low VCE(on) • 10 µs short circuit capability
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GB150TS60NPbF
18-Jul-08
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igbt to 60 kHz
Abstract: No abstract text available
Text: GA75TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 75 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 to 40 kHz in hard switching, > 200 kHz in resonant mode RoHS COMPLIANT • Very low conduction and switching losses
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GA75TS120UPbF
18-Jul-08
igbt to 60 kHz
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Untitled
Abstract: No abstract text available
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high operating frequencies 8 to 40 kHz in hard switching, > 200 kHz in resonant mode
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GA200TS60UPbF
12-Mar-07
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E78996 datasheet bridge
Abstract: E78996 bridge Igbt high voltage low current DC265A GA200TS60UPBF
Text: GA200TS60UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 200 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses
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GA200TS60UPbF
E78996
2002/95/EC
18-Jul-08
E78996 datasheet bridge
E78996 bridge
Igbt high voltage low current
DC265A
GA200TS60UPBF
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irg4
Abstract: IRG4RC10U
Text: International IGR Rectifier PD - 9 .1 5 7 2 IRG4 RC10U PRELIMINARY UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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RC10U
O-252AA
EIA-481
irg4
IRG4RC10U
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Untitled
Abstract: No abstract text available
Text: PD - 9 .1 4 5 2D International I R Rectifier IRG4BC30U PRELIMINARY Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optim ized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter
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IRG4BC30U
O-22QAB
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Untitled
Abstract: No abstract text available
Text: In te rn a tio n a l I«R Rectifier PD -5 .056A PRELIMINARY "HALF-BRIDGE” IGBT INT-A-PAK G A 150T S 6 0 U Ultra-Fast Speed IGBT Features • Generation 4 IGBT technology V q e s — 600V • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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