Untitled
Abstract: No abstract text available
Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability
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GB200TS60NPbF
E78996
2002/95/EC
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half Bridge” Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: optimized for hard switching speed • Low VCE(on) • 10 s short circuit capability
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VS-GB200TS60NPbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability
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Original
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PDF
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GB200TS60NPbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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1853G
Abstract: No abstract text available
Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching speed 8 to 60 kHz COMPLIANT • Low VCE(on) • 10 µs short circuit capability
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Original
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PDF
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GB200TS60NPbF
18-Jul-08
1853G
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Untitled
Abstract: No abstract text available
Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching operating frequencies 8 to 60 kHz COMPLIANT • Low VCE(on)
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Original
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PDF
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GB200TS60NPbF
12-Mar-07
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w438
Abstract: No abstract text available
Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Ultrafast: Optimized for hard switching speed 8 to 60 kHz COMPLIANT • Low VCE(on) • 10 µs short circuit capability
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Original
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PDF
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GB200TS60NPbF
18-Jul-08
w438
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Untitled
Abstract: No abstract text available
Text: GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability
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Original
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PDF
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GB200TS60NPbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability
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Original
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PDF
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VS-GB200TS60NPbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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GB200TS60NPBF
Abstract: No abstract text available
Text: GB200TS60NPbF Vishay High Power Products INT-A-PAKTM "Half-Bridge" Ultrafast Speed IGBT , 200 A FEATURES • Generation 5 Non Punch Through (NPT) technology RoHS • Low VCE(on) COMPLIANT • 10 µs short circuit capability • Square RBSOA • Positive VCE(on) temperature coefficient
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GB200TS60NPbF
12-Mar-07
GB200TS60NPBF
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GB200TS60
Abstract: No abstract text available
Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability
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Original
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PDF
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GB200TS60NPbF
E78996
2002/95/EC
11-Mar-11
GB200TS60
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GB200TS60N
Abstract: GB200TS60NPBF DC-209 E78996 datasheet bridge
Text: GB200TS60NPbF Vishay High Power Products INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability
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Original
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PDF
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GB200TS60NPbF
E78996
2002/95/EC
18-Jul-08
GB200TS60N
GB200TS60NPBF
DC-209
E78996 datasheet bridge
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Untitled
Abstract: No abstract text available
Text: VS-GB200TS60NPbF www.vishay.com Vishay Semiconductors INT-A-PAK "Half-Bridge" Ultrafast Speed IGBT , 209 A FEATURES • Generation 5 Non Punch Through (NPT) technology • Ultrafast: Optimized for hard switching speed 8 kHz to 60 kHz • Low VCE(on) • 10 s short circuit capability
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Original
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PDF
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VS-GB200TS60NPbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. Industrial Fabrication One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Industrial Fabrication Welding 4 Cutting 5 Melting 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay
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VMN-MS6761-1212
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diode KVP 83 A
Abstract: No abstract text available
Text: Vishay Intertechnology, Inc. Industrial Fabrication One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Industrial 製造装置 溶接 4 切断 5 融解 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay
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Original
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VMN-MS6792-1304-INFB
diode KVP 83 A
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